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Part Manufacturer Description Last Check Distributor Ordering
BD647 Bourns Darlington Transistors 62.5W NPN Silicon (Aug 2016) Mouser Electronics Buy
BD647 TT Electronics DARLINGTON TRANSISTOR, TO-220 from £2.54 (Aug 2016) Farnell element14 Buy
BD647 TT Electronics DARLINGTON TRANSISTOR, NPN, 80V, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:10MHz; Power Dissipation Pd:62.5W; DC Collector Current:8A; DC Current Gain hFE:1500hFE; MSL:- ;RoHS Compliant: Yes (Aug 2016) Newark element14 Buy
BD647-S Bourns Trans Darlington NPN 80V 8A 3-Pin(3+Tab) TO-220 - Tape and Reel (Alt: BD647-S) (Aug 2016) Avnet Buy
BD647-S Bourns Darlington Transistors 80V 8A NPN (Aug 2016) Mouser Electronics Buy
BD647.R TT Electronics BIPOLAR POWER TRANSISTOR (Sep 2016) Mouser Electronics Buy

BD647 Datasheet

Part Manufacturer Description PDF Type Ordering
BD647 N/A Basic Transistor and Cross Reference Specification
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1 pages,
54.11 Kb

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BD647 N/A Transistor Replacements
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1 pages,
78.66 Kb

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BD647 N/A Transistor Replacements
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1 pages,
64.05 Kb

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BD647 N/A Shortform Transistor PDF Datasheet
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1 pages,
147.22 Kb

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BD647 N/A Shortform Transistor PDF Datasheet
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1 pages,
162.39 Kb

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BD647 N/A Cross Reference Datasheet
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1 pages,
36 Kb

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BD647 N/A Transistor Replacements
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1 pages,
69.02 Kb

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BD647 N/A Transistor Replacements
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1 pages,
61.81 Kb

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BD647 N/A Transistor Replacements
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1 pages,
77.46 Kb

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BD647 N/A Transistor Replacements
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1 pages,
85.7 Kb

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BD647

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , Collector-base voltage (IE = 0) 80 BD647 100 BD649 BD649 V CBO 120 BD651 BD651 60 BD647 BD649 BD649 , BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 BD645 Collector-emitter BD647 , 0 BD647 0.5 cut-off current VCE = 50 V IB = 0 BD649 BD649 0.5 V VCE = 60 V ... Bourns
Original
datasheet

4 pages,
61.44 Kb

transistor bd647 transistor bd645 BD652 Bd645 equivalent BD646 BD650 BD647 BD648 BD649 equivalent bd650 bd649 BD651 BD645 BD649 TEXT
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Abstract: BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , Collector-base voltage (IE = 0) 80 BD647 100 BD649 BD649 V CBO 120 BD651 BD651 60 BD647 BD649 BD649 , BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 BD645 Collector-emitter BD647 , 0 BD647 0.5 cut-off current VCE = 50 V IB = 0 BD649 BD649 0.5 V VCE = 60 V ... Bourns
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datasheet

5 pages,
81.75 Kb

BD652 BD650 bd648 BD646 BD645 BD651 bd645 transistor BD649 transistor bd647 BD647 TEXT
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Abstract: BD643 BD643; BD645 BD645; BD647; BD649 BD649; BD651 BD651 PHILIPS INTERNATIONAL 5bE D ■ 7110fl2b 0042^ 741 «RHIN , ; BD645 BD645; BD647; BD649 BD649; BD651 BD651 PHILIPS INTERNATIONAL n L. SbE D R1 711DÖ2b ODMSIS? bflâ MPHIN T , load; Iq = 4.5 A (see Fig. 3) 5bE T> 'CBO BD643 BD643; BD645 BD645; BD647; BD649 BD649; RD651 RD651_ 711002b , Material Copyrighted By Its Respective Manufacturer BD643 BD643; BD645 BD645; BD647; BD649 BD649; BD651 BD651 / \ PHILIPS , transistors PHILIPS INTERNATIONAL 102 BD643 BD643; BD645 BD645; BD647; BD649 BD649; _BD651 BD651 5bE D 71iaö2b 0042ci3D 172 â ... OCR Scan
datasheet

10 pages,
233.06 Kb

b0651 BD643 BD644 BD646 BD647 BD648 BD649 transistor D 649 BD650 BD651 BD651 PHILIPS BD652 darlington bd647 philips TRANSISTORS 1968 BD645 bd649 PNP transistor B0645 BD649 philips darlington bd 645 lg bd645 TEXT
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Abstract: Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 Collector-Base Voltage VCEO Value Collector , Temperature range BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD645 BD647 BD649 BD649 BD651 BD651 Unit 150 mA 62.5 Watts 150 °C -65 to ... Comset Semiconductors
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datasheet

5 pages,
339.15 Kb

IC 651 BD644 BD646 BD648 BD649 equivalent BD650 BD652 bd650 bd649 BD651 BD643 darlington bd647 BD649 bd647 BD645 BD643/645/647/649/651 BD643/645/647/649/651 TEXT
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Abstract: BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , 25°C case temperature (unless otherwise noted) RATING BD645 BD645 BD647 Collector-base voltage , voltage (IB = 0) BD647 BD649 BD649 BD651 BD651 Emitter-base voltage Continuous collector current V , . 1 BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , VCB = 70 V 0.5 0.5 0.5 0.2 0.2 BD647 0.2 BD649 BD649 IE = 0 IE = 0 TC = 150°C IE ... Bourns
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datasheet

4 pages,
656.69 Kb

BD645 BD647 BD649 BD651 BD646 BD648 BD650 BD652 TEXT
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Abstract: BD643 BD643; BD645 BD645; BD647; BD649 BD649; ^ BD651 BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN , August 1991 bbS3T31 00343*34 Tfil 213 BD643 BD643; BD645 BD645; BD647; BD649 BD649; BD651 BD651 J V R1 typ , ; BD645 BD645; BD647; BD649 BD649; BD651 BD651_ Silicon Darlington power transistors J CHARACTERISTICS Tj = , bbS3T31 □ 0 3 4 3 c flSl lb f Z 1988 215 BD643 BD643; BD645 BD645; BD647; BD649 BD649; BD651 BD651 Switching , = 15 ns = 10/is = 500 ns BD643 BD643; BD645 BD645; BD647; BD649 BD649; BD651 BD651 Silicon Darlington power ... OCR Scan
datasheet

10 pages,
317.75 Kb

BD643 BD645 BD647 BD649 BD651 TEXT
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Abstract: BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , 25°C case temperature (unless otherwise noted) RATING BD645 BD645 BD647 Collector-base voltage , Emitter-base voltage Continuous collector current 80 UNIT 100 120 V 140 BD645 BD645 BD647 , actual device performance in their specific applications. 1 BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON , BD647 0.2 BD649 BD649 IE = 0 IE = 0 TC = 150°C IE = 0 TC = 150°C IE = 0 TC = 150 ... Bourns
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datasheet

4 pages,
641.28 Kb

BD645 BD647 BD649 BD651 BD646 BD648 BD650 BD652 TEXT
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Abstract: BOMS, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARUNG70NS DARUNG70NS Copyrtght C 1997, Power Innovations Limited , ) RATING BD645 BD645 Cottector-base voltage (lE = o) BD647 BD649 BD649 BÛ651 B0645 B0645 BD647 BD649 BD649 BD651 BD651 Emitter-base , include testing of aB parameters. INNOVATIONS 3-3 BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER , otherwise noted) P A RA M ET ER Cotteclor-emitter breakdown voftage TEST CONDITIONS 80645 BD647 BD649 BD649 BD651 BD651 BD645 BD645 BD647 BD649 BD649 BD651 BD651 BD645 BD645 BD647 BD649 BD649 BD651 BD651 Tc = 150°C Tc a ISO^C Tc = 150' C Tc = 150°C (see Notes ... OCR Scan
datasheet

4 pages,
157.97 Kb

TAG 064 bd649 B0645 B0647 BD647 BD649 BD651 DARUNG70NS BD646 BD648 BD650 BD652 TEXT
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Abstract: BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , BD645 BD645 Collector-base voltage ( lE = 0) BD647 BD649 BD649 BD651 BD651 BD645 BD645 Collector-em itter voltage ( lB = 0) BD647 BD649 BD649 BD651 BD651 Em itter-base voltage Continuous collector current Peak collector current (see Note 1 , all parameters. BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS M AY 1993 - REVISED , breakdown voltage Iq = 30 mA lB = 0 (see Note 5) v ' BD647 BD649 BD649 BD651 BD651 V CD C ... OCR Scan
datasheet

6 pages,
206.12 Kb

bd649 BD645 BD647 BD649 BD651 BD646 BD648 BD650 BD652 TEXT
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Abstract: BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , (unless otherwise noted) RATING BD645 BD645 BD647 Collector-base voltage (IE = 0) BD649 BD649 SYMBOL , Continuous collector current 80 UNIT 100 120 V 140 BD645 BD645 BD647 VALUE 60 V CEO , actual device performance in their specific applications. 1 BD645 BD645, BD647, BD649 BD649, BD651 BD651 NPN SILICON , BD647 0.2 BD649 BD649 IE = 0 IE = 0 TC = 150°C IE = 0 TC = 150°C IE = 0 TC = 150 ... Bourns
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datasheet

4 pages,
642.75 Kb

BD645 BD647 BD649 BD651 BD646 BD648 BD650 BD652 TEXT
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Abstract: B 0643. BD64S BD64S, BD647, BD649 BD649 1 rf 50 100 150°C /¡2 S 8 tf6 Ilf5 10'; IQ , E S E L L S C H A F - BD647 BD 649 Collector current ¡c ~ 1 (Vee) Vfce ... OCR Scan
datasheet

4 pages,
238.99 Kb

Q62702-D376 BD64S bd647 TOP-66 BD 649 b 647 c darlington bd 645 BD 104 BO 649 T-33-29 TEXT
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Abstract: perm, power dissipation versus temperature Plot =1 iTaui: Vce = parameter BD643 BD643, BD645 BD645, BD647, BD649 BD649 , BD 643. BD 645, BD647. BD 649 DC current gain hfs - fife) VcE = 3 V; Tax, = 25 °C BD843 BD843 , °C BD643 BD643, BD645 BD645, BD647, BD649 BD649 10' 0 1 2 3V - BD 643 BD 645 -BD 647 BD 649 Collector-emitter saturation voltage Vce«. = ' Vài hr e = 250; T^ = 25 °C mA BD643 BD643, BD645 BD645, BD647, BD649 BD649 436 1813 D-02 ... OCR Scan
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4 pages,
126.38 Kb

diode 647 J50J1 B0645 Q62702-D231 Q62702-D233 Q62702-D236 Q62702-D237 BD645 Q62702-D235 BD 650 BD 104 BD 649/BD 650 BD647 Q62702-D229 T-33-29 darlington bd 645 T-33-29 BD 104 NPN T-33-29 TOP-66 T-33-29 2SC 645 T-33-29 BD 649 T-33-29 T-33-29 T-33-29 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
BD647   BDX53B BDX53B BD648 BD648   BDX54B BDX54B BD649 BD649   BDX53C BDX53C BD650 BD650   BDX54C BDX54C
/datasheets/files/stmicroelectronics/stonline/prodpres/discrete/powebipo/bipcros2.htm
STMicroelectronics 28/06/2000 112.56 Kb HTM bipcros2.htm
BD647   BDX53B BDX53B BD648 BD648   BDX54B BDX54B BD649 BD649   BDX53C BDX53C BD650 BD650   BDX54C BDX54C
/datasheets/files/stmicroelectronics/stonline/prodpres/discrete/powebipo/bipcros2-v2.htm
STMicroelectronics 14/06/1999 112.29 Kb HTM bipcros2-v2.htm
BD647   BDX53B BDX53B BD648 BD648   BDX54B BDX54B BD649 BD649   BDX53C BDX53C BD650 BD650   BDX54C BDX54C
/datasheets/files/stmicroelectronics/stonline/prodpres/discrete/powebipo/bipcros2-v1.htm
STMicroelectronics 20/10/2000 118.05 Kb HTM bipcros2-v1.htm
BD647 BDX53B BDX53B BD648 BD648 BDX54B BDX54B BD649 BD649 BDX53C BDX53C BD650 BD650 BDX54C BDX54C BD650F BD650F BDW94CFI BDW94CFI BD650H BD650H BDX54C BDX54C BD651 BD651 BDX53F BDX53F BD652 BD652
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3649.htm
STMicroelectronics 20/10/2000 64.89 Kb HTM 3649.htm
BDX53B BDX53B BD646 BD646 BDX54B BDX54B BD647 BDX53B BDX53B BD648 BD648 BDX54B BDX54B BD649 BD649 BDX53C BDX53C BD650 BD650 BDX54C BDX54C BD650F BD650F BDW94CFI BDW94CFI
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3649-v1.htm
STMicroelectronics 02/04/1999 232.33 Kb HTM 3649-v1.htm
BD644 BD644 BDX54B BDX54B BD645 BD645 BDX53B BDX53B BD646 BD646 BDX54B BDX54B BD647 BDX53B BDX53B BD648 BD648 BDX54B BDX54B BD649 BD649 BDX53C BDX53C BD650 BD650 BDX54C BDX54C BD650F BD650F
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3649-v3.htm
STMicroelectronics 25/05/2000 61.07 Kb HTM 3649-v3.htm
BDX53B BDX53B BD646 BD646 BDX54B BDX54B BD647 BDX53B BDX53B BD648 BD648 BDX54B BDX54B BD649 BD649 BDX53C BDX53C BD650 BD650 BDX54C BDX54C BD650F BD650F BDW94CFI BDW94CFI
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3649-v2.htm
STMicroelectronics 14/06/1999 194.65 Kb HTM 3649-v2.htm
: "awbbd645" * * *$ model description: "awbbd647" *a Device model created by analog_uprev for bd647 on Sun Feb
/datasheets/files/spicemodels/misc/bjnd.lib
Spice Models 26/03/2008 43.75 Kb LIB bjnd.lib
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref.txt
STMicroelectronics 30/03/1999 445.18 Kb TXT xref.txt
No abstract text available
/datasheets/files/stmicroelectronics/stonline/db/xref-v2.txt
STMicroelectronics 11/06/1999 1361.18 Kb TXT xref-v2.txt

Shortform Datasheet Search

Part Manufacturer Description Shortform Datasheet Ordering
BD647 N/A Silicon NPN Darlington Diode

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BD647 N/A Darlington, Power

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BD647F N/A NPN Darlington Transistor

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BD647F N/A Silicon NPN Darlington Diode

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NTE Electronics Cross Reference Results

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NTE263 Buy BD647 Buy
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On Semiconductor Cross Reference Results

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BDX53BG Buy BD647 Buy Advanced Semiconductor Close
TIP101G Buy BD647 Buy Advanced Semiconductor Close

STMicroelectronics Cross Reference Results

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BDX53B Buy BD647 Buy - Nearest Preferred Power Bipolar

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