500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BD647 Supplier : TT Electronics Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BD647 Supplier : Bourns Manufacturer : ComSIT Stock : 200 Best Price : - Price Each : -
Part : BD647 Supplier : TT Electronics Manufacturer : Farnell element14 Stock : - Best Price : £2.65 Price Each : £3.47
Shipping cost not included. Currency conversions are estimated. 

BD647 Datasheet

Part Manufacturer Description PDF Type
BD647 Bourns NPN SILICON POWER DARLINGTONS Original
BD647 Comset Semiconductors Silicon NPN Darlington Power Transistors Original
BD647 Philips Semiconductors Silicon Darlington Power Transistor Original
BD647 Power Innovations NPN SILICON POWER DARLINGTON Original
BD647 General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. Scan
BD 647 Infineon Technologies TRANS DARLINGTON NPN 80V 8A 3TO-220AB Scan
BD647 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD647 Mullard Quick Reference Guide 1977/78 Scan
BD647 N/A Basic Transistor and Cross Reference Specification Scan
BD647 N/A Transistor Replacements Scan
BD647 N/A Transistor Replacements Scan
BD647 N/A Shortform Transistor PDF Datasheet Scan
BD647 N/A Shortform Transistor PDF Datasheet Scan
BD647 N/A Cross Reference Datasheet Scan
BD647 N/A Transistor Replacements Scan
BD647 N/A Transistor Replacements Scan
BD647 N/A Transistor Replacements Scan
BD647 N/A Transistor Replacements Scan
BD647 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD647 N/A Semiconductor Master Cross Reference Guide Scan
Showing first 20 results.

BD647

Catalog Datasheet MFG & Type PDF Document Tags

BD649

Abstract: BD645 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , Collector-base voltage (IE = 0) 80 BD647 100 BD649 V CBO 120 BD651 60 BD647 BD649 , BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 Collector-emitter BD647 , 0 BD647 0.5 cut-off current VCE = 50 V IB = 0 BD649 0.5 V VCE = 60 V
Bourns
Original
BD646 BD648 BD650 BD652 BD649 equivalent bd650 bd649 transistor bd645 transistor bd647 TCS130AB TCS130AC

BD647

Abstract: transistor bd647 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , Collector-base voltage (IE = 0) 80 BD647 100 BD649 V CBO 120 BD651 60 BD647 BD649 , BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 Collector-emitter BD647 , 0 BD647 0.5 cut-off current VCE = 50 V IB = 0 BD649 0.5 V VCE = 60 V
Bourns
Original
bd645 transistor TIS130AC

lg bd645

Abstract: BD649 philips BD643; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL 5bE D â  7110fl2b 0042^ 741 «RHIN , ; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL n L. SbE D R1 711DÃ2b ODMSIS? bflâ MPHIN T , load; Iq = 4.5 A (see Fig. 3) 5bE T> 'CBO BD643; BD645; BD647; BD649; RD651_ 711002b , Material Copyrighted By Its Respective Manufacturer BD643; BD645; BD647; BD649; BD651 / \ PHILIPS , transistors PHILIPS INTERNATIONAL 102 BD643; BD645; BD647; BD649; _BD651 5bE D 71iaö2b 0042ci3D 172 â
-
OCR Scan
BD644 lg bd645 BD649 philips darlington bd 645 bd649 PNP transistor B0645 transistor D 649 T0-220 T-33-29 IEC134

BD645

Abstract: bd647 Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Collector-Base Voltage VCEO Value Collector , Temperature range BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Unit 150 mA 62.5 Watts 150 °C -65 to
Comset Semiconductors
Original
darlington bd647 IC 651 BD643/645/647/649/651
Abstract: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , 25°C case temperature (unless otherwise noted) RATING BD645 BD647 Collector-base voltage , voltage (IB = 0) BD647 BD649 BD651 Emitter-base voltage Continuous collector current V , . 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , VCB = 70 V 0.5 0.5 0.5 0.2 0.2 BD647 0.2 BD649 IE = 0 IE = 0 TC = 150°C IE Bourns
Original
SAS130AC

BD651

Abstract: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN , August 1991 bbS3T31 00343*34 Tfil 213 BD643; BD645; BD647; BD649; BD651 J V R1 typ , ; BD645; BD647; BD649; BD651_ Silicon Darlington power transistors J CHARACTERISTICS Tj = , bbS3T31 â¡ 0 3 4 3 c flSl lb f Z 1988 215 BD643; BD645; BD647; BD649; BD651 Switching , = 15 ns = 10/is = 500 ns BD643; BD645; BD647; BD649; BD651 Silicon Darlington power
-
OCR Scan
S3T31 D034401 00344D2
Abstract: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , 25°C case temperature (unless otherwise noted) RATING BD645 BD647 Collector-base voltage , Emitter-base voltage Continuous collector current 80 UNIT 100 120 V 140 BD645 BD647 , actual device performance in their specific applications. 1 BD645, BD647, BD649, BD651 NPN SILICON , BD647 0.2 BD649 IE = 0 IE = 0 TC = 150°C IE = 0 TC = 150°C IE = 0 TC = 150 Bourns
Original

B0647

Abstract: B0645 BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited , ) RATING BD645 Cottector-base voltage (lE = o) BD647 BD649 BÛ651 B0645 BD647 BD649 BD651 Emitter-base , include testing of aB parameters. INNOVATIONS 3-3 BD645, BD647, BD649, BD651 NPN SILICON POWER , otherwise noted) P A RA M ET ER Cotteclor-emitter breakdown voftage TEST CONDITIONS 80645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 Tc = 150°C Tc a ISO^C Tc = 150' C Tc = 150°C (see Notes
-
OCR Scan
B0647 TAG 064 TIS13QAC

bd649

Abstract: BD651 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , BD645 Collector-base voltage ( lE = 0) BD647 BD649 BD651 BD645 Collector-em itter voltage ( lB = 0) BD647 BD649 BD651 Em itter-base voltage Continuous collector current Peak collector current (see Note 1 , all parameters. BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS M AY 1993 - REVISED , breakdown voltage Iq = 30 mA lB = 0 (see Note 5) v ' BD647 BD649 BD651 V CD C
-
OCR Scan
Abstract: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , (unless otherwise noted) RATING BD645 BD647 Collector-base voltage (IE = 0) BD649 SYMBOL , Continuous collector current 80 UNIT 100 120 V 140 BD645 BD647 VALUE 60 V CEO , actual device performance in their specific applications. 1 BD645, BD647, BD649, BD651 NPN SILICON , BD647 0.2 BD649 IE = 0 IE = 0 TC = 150°C IE = 0 TC = 150°C IE = 0 TC = 150 Bourns
Original

B0645

Abstract: BD85 BD643; BD645; BD647; BD649; BD651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base , TÃ"T This Material Copyrighted By Its Respective Manufacturer BD643; BD645; BD647; BD649; BD651 V , Respective Manufacturer Silicon Darlington power transistors BD643; BD645; BD647; BD649; BD651 , Manufacturer BD643; BD645; BD647; BD649; BD651 Switching times (see Figs 4 and 5) lc = 3A;lBon = -lBoff= , transistors BD643; BD645; BD647; BD649; BD651 Fig. 6 BD643; BD645 Safe Operating Area, Tmb = 25 °C. I
-
OCR Scan
BD85 b0652 transistor bd646 D0344 80651 bd851 MSA060-1 0344G2 53S31

darlington bd647

Abstract: TL 2262 File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors , , BD645, BD647, and BD649 are m onolithic silicon n-p-n D arlington transistors designed fo r low and m , ? n is BPS - to 150 BD647 80 80 BD649 100 100 V V V A A A W W/°C ^ s tg ' TJ , . c 235 "C 2-260 BD643, BD645, BD647, BD649 ELECTRICAL CHARACTERISTICS, At Case , TRANSISTORS 3 3 3 0.5« 1500«» BD643, BD645, BD647, BD649 ELECTRICAL CHARACTERISTICS, At Case
-
OCR Scan
TL 2262 tic 2260 220AB

BD649

Abstract: BD647 File Number 1241 SbE ] > BD643, BD645, BD647, BD649 4302271 OOMObflZ £21 HARRIS SEMTCOND , o JEDEC TQ-220AB r t : 9 8 C S -3 9 9 6 9 Oc The BD643, BD645, BD647, and BD649 are , . BD643 45 45 BD645 60 60 « A 1? BD647 80 80 BD649 100 100 V V V A A A W W/°C ·c c , 0.5 -55 to 150 235 ·C 2-260 BD643, BD645, BD647, BD649 Unless Otherwise Specified , all types. 2-261 SbE ]> 4302271 0Q40bfl4 3T4 «HAS HARRIS SEMICOND SECTOR BD643, BD645, BD647
-
OCR Scan
BD64S 00m0 2069IR

B0643

Abstract: d 17275 , BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 , plifiers JEDEC TO-220AB Qc The RCA-BD643, BD645, BD647, and BD649 are m o n o lith ic s ilic o n , BD647 80 80 BD649 100 100 V V v A A A W W/«C CBO · VCEO , _ B0643, BD645, BD647, BD649 E L E C T R IC A L C H A R A C T E R IS T IC S , A t C ase T e m p , Transistors BD643, BD645, BD647, BD649 ELECTRICAL CHARACTERISTICS, At Case Tem perature (T q) = 2 5 'C
-
OCR Scan
d 17275 BD649C 3A75DA1 001727L

bd645 transistor

Abstract: transistor BD6 J PHILIPS INTERNATIONAL SbE D BD643; BD645; BD647; BD649; BD651 _ m 7110fi2b 0042 , BD643; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL 5bE D 711Dfl2b ODMS'IS? bflB M P H I N T , CB0 max; Tj = 150 °C 5bE D BD643; BD645; BD647; BD649; BD651_ 711002b 0042*120 514 IPHIN T , increasing temperature. July 1988 215 BD643; BD645; BD647; BD649; BD651 / PHILIPS , Darlington power transistors ^ PHILIPS INTERNATIONAL 5bE D 7 Z 8 2 0 9 3 .1 BD643; BD645; BD647
-
OCR Scan
transistor BD6 H 649 A transistor MSA060 0042T32 7Z82902 T--33--2

BD649

Abstract: BD647 Collector-base voltage BD647 BD649 VALUE 80 Open emitter 100 120 BD651 Collector-emitter voltage 60 BD647 BD649 Open base BD651 VEBO Emitter-base voltage IC V 140 , Collector-emitter breakdown voltage MIN TYP. MAX UNIT 60 BD647 80 IC=30mA, IB=0 V BD649 , VCB=60V, IE=0 VCB=40V, IE=0 ;TC=150 0.2 2.0 BD647 VCB=80V, IE=0 VCB=50V, IE=0 ;TC , =70V, IE=0 ;TC=150 0.2 2.0 BD645 VCE=30V, IB=0 BD647 VCE=40V, IB=0 BD649 VCE=50V, IB
-
Original
PC 649 BD645/647/649/651 BD646/648/650/652

BD647

Abstract: BD651 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , temperature (unless otherwise noted) RATING SYMBOL BD645 Collector-base voltage (IE = 0) BD647 BD649 VALUE VCBO 100 120 BD651 60 BD647 BD649 VCEO BD651 80 100 V , include testing of all parameters. 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY , noted) PARAMETER TEST CONDITIONS MIN BD645 MAX 80 BD649 100 BD647 0.5
Power Innovations
Original

BD645

Abstract: BD649 Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power , RCA-BD643, BD645, BD647, and BD649 are monolithic silicon n-p-n Darlington transistors designed for low-and , /8 In. (3.17 mm) from case lor 10 s max. BD643 BD645 BD647 BD649 45 60 80 , ~sTÃ'TE " 01E17274' D 'T" 33""2-7 Darlington Power Transistors_ BD643, BD645, BD647, BD649 ELECTRICAL , ¡ 3875081" g e solid state 01e 17275 dt'si&'z-j _Darlington Power Transistors BD643, BD645, BD647, BD649
-
OCR Scan
n69s B13 transistors 92CS- 2069IR3 0D1757S 3A750 92CH-32699

BD 649

Abstract: 2SC 645 BD 643. BD 645, BD647. BD 649 DC current gain hfs - fife) VcE = 3 V; Tax, = 25 °C BD843 , perm, power dissipation versus temperature Plot =1 iTaui: Vce = parameter BD643, BD645, BD647, BD649 , °C BD643, BD645, BD647, BD649 10' 0 1 2 3V - BD 643 BD 645 -BD 647 BD 649 Collector-emitter saturation voltage Vce«. = ' Vài hr e = 250; T^ = 25 °C mA BD643, BD645, BD647, BD649 436 1813 D-02
-
OCR Scan
Q62702-D229 Q62702-D235 Q62702-D231 J50J1 BD 649 2SC 645 TOP-66 BD 104 NPN Q62901-B65 BD 649/BD 650 23SLQS 643/BD 645/BD 647/BD 649/BD

BO 649

Abstract: darlington bd 645 B 0643. BD64S, BD647, BD649 1 rf 50 100 150°C /¡2 S 8 tf6 Ilf5 10'; IQ , E S E L L S C H A F - BD647 BD 649 Collector current ¡c ~ 1 (Vee) Vfce
-
OCR Scan
Q62702-D376 BO 649 BD 104 b 647 c Q62702-D236 Q62702-D233 Q62702-D237 Q62702-D374 Q62901-B55

BD 649

Abstract: darlington bd 645 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , (unless otherwise noted) RATING BD645 BD647 Collector-base voltage (IE = 0) BD649 SYMBOL , Continuous collector current 80 UNIT 100 120 V 140 BD645 BD647 VALUE 60 V CEO , actual device performance in their specific applications. 1 BD645, BD647, BD649, BD651 NPN SILICON , BD647 0.2 BD649 IE = 0 IE = 0 TC = 150°C IE = 0 TC = 150°C IE = 0 TC = 150Â
-
OCR Scan
b 647 a c BD 645 BD 650 BD NPN transistors B0649 BD 644 653/1077A1
Showing first 20 results.