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Part : CXB1304-0000-000C0BD250E Supplier : Cree Manufacturer : Chip1Stop Stock : 100 Best Price : $2.7220 Price Each : $2.7220
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BD250B Datasheet

Part Manufacturer Description PDF Type
BD250B Bourns PNP SILICON POWER TRANSISTORS Original
BD250B Power Innovations PNP SILICON POWER TRANSISTORS Original
BD250B Mospec Complementary Silicon High-Power Transistor Scan
BD250B Mospec POWER TRANSISTORS(25A,125W) Scan
BD250B Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD250B Motorola European Master Selection Guide 1986 Scan
BD250B N/A Shortform Transistor PDF Datasheet Scan
BD250B N/A Shortform Transistor PDF Datasheet Scan
BD250B N/A Cross Reference Datasheet Scan
BD250B N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD250B N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BD250B N/A Shortform Transistor Datasheet Guide Scan
BD250B N/A Shortform Data and Cross References (Misc Datasheets) Scan
BD250B Texas Instruments Supply Division Product Catalogue 1978/79 Scan
BD250B Texas Instruments The Power Semiconductor Data Book 1974 Scan
BD250B Texas Instruments Discrete Devices 1978 Scan
BD250B Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BD250B-S Bourns PNP TRANSISTOR 80V 25A Original

BD250B

Catalog Datasheet MFG & Type PDF Document Tags

BD250C

Abstract: bd250 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Designed for Complementary , BD250B SYMBOL VALUE -55 VCER -70 -90 -115 -45 -60 -80 -100 -5 -25 -40 -5 125 3 90 -65 to +150 -65 to +150 , BD250C BD250 BD250A BD250B V CEO BD250C VEBO IC IB ICM Ptot Ptot Tj ½LIC2 Tstg TL PRODUCT , . BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , 6) f = 1 kHz (see Notes 5 and 6) 25 10 5 -1.8 -4 -2 -4 V V IB = 0 BD250A BD250B BD250C BD250 BD250A
Bourns
Original
BD249 TCS636AB TCS636AC SAS636AB TIS635AA

BD250

Abstract: BD250A BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , voltage (RBE = 100 ) BD250A BD250B VCER BD250B -70 V -90 -115 BD250 , processing does not necessarily include testing of all parameters. 1 BD250, BD250A, BD250B, BD250C , breakdown voltage BD250A IB = 0 (see Note 5) MAX -60 BD250B -80 BD250C IC = -30 , = -70 V V BE = 0 BD250A -0.7 cut-off current V CE = -90 V V BE = 0 BD250B
Power Innovations
Original
BD250C EQUIVALENT

bd250

Abstract: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , -70 -90 -115 -45 -60 UNIT BD250B BD250C BD250 V Collector-em itter voltage (lc = -30 mA) BD250A BD250B BD250C V CEO -80 -100 V Em itter-base voltage Continuous collector current Peak , . Production processing does not necessarily include testing of all parameters. BD250, BD250A, BD250B , 0 BD250A BD250B BD250C V o V CE= Collector-em itter CES cut-off current V CE= V CE
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OCR Scan

BD250

Abstract: BD250A BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD250B VCER -70 BD250C -115 -45 BD250A BD250B V CEO , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD250, BD250A, BD250B, BD250C , 5) MAX -60 BD250B -80 BD250C IC = -30 mA TYP -100 V VCE = -55 V , VCE = -70 V VBE = 0 BD250A -0.7 cut-off current VCE = -90 V VBE = 0 BD250B
Bourns
Original

BD250C

Abstract: BD250 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Designed for Complementary , noted) RATING BD250 Collector-emitter voltage (RBE = 100 ) BD250A BD250B BD250C BD250 Collector-emitter voltage (IC = -30 mA) BD250A BD250B BD250C Emitter-base voltage Continuous collector current Peak , without notice. BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS electrical , -1.8 -4 -2 -4 V V IB = 0 BD250A BD250B BD250C BD250 BD250A BD250B BD250C BD250/250A BD250B/250C MIN -45
Bourns
Original

BD250C

Abstract: bd250 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD250B VCER -70 BD250C -115 -45 BD250A BD250B V CEO , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD250, BD250A, BD250B, BD250C , 5) MAX -60 BD250B -80 BD250C IC = -30 mA TYP -100 V VCE = -55 V , VCE = -70 V VBE = 0 BD250A -0.7 cut-off current VCE = -90 V VBE = 0 BD250B
Bourns
Original

8D250C

Abstract: B0249 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright @1997, Power Innovations , ft) BD250A BD250B 8D250C BD250 Coifeclor-emitter voltage (ic = -30 mA) BD250A BD250B 8D250C , e r I NNOVATI ONS 2-47 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS JUNE , CoHector-emltter (Bft)CEO breakdown voltage TEST CONDITIONS BD250 BD250A BD250B ^ BD250C BD250 B0250A BD250B BD250C , transistor parameters. 2-46 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS _ JUNE
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B0249 BD25QA

TIP 29 transistor

Abstract: transistor BD 240 BD250, BD250A, BD250B, BD250C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , (unless otherwise noted) BD250 BD250A BD250B BD250C Collector-Emitter Voltage (Rbe = 100 A).-55 , Instruments 2-61 BD250, BD250A, BD250B, BD250C electrical characteristics at 25 °C case temperature parameter test conditions bd250 min max bd250a min max bd250b min max bd250c min max unit v(BR)CEO lc = , vary slightly with transistor parameters. 60 Texas Instruments 2-61 BD250, BD250A, BD250B, BD250C
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OCR Scan
TIP 29 transistor transistor BD 240 transistor tip 3055 transistor tip 62 BD250C TEXAS INSTRUMENTS mj 3055 npn BD249A-C 40PEP 80PEP

BC125

Abstract: BD250 breakdown voltage MIN TYP. MAX UNIT -45 BD250A -60 IC=-30mA ;IB=0 V BD250B , =-4V -3.0 V ICEO Collector cut-off current IEBO BD250/250A BD250B/250C VCE
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Original
BD246 BD246A BD246B BD246C BC125 BD246 EQUIVALENT BD250/A/B/C BD249/A/B/C

BD250

Abstract: bd249 BD250B -80 BD250C -100 VCEsat-1 Collector-emitter saturation voltage IC=-15A ;IB , =-30V IB=0 BD250B/250C VCE=-60V IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE
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Original
BD249 EQUIVALENT BD250B/250C

BD249

Abstract: BD2436 =1.0A MAXIMUM RATINGS THERMAL CHARACTERISTICS NPN PNP BD249 BD250 BD249A BD250A BD249B BD250B BD249C BD250C Characteristic Symbol BD249 BD250 BD249A BD250A BD249B BD250B BD249C BD250C Unit
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OCR Scan
BD2436 D250C D249C 3ftg

BDW66C

Abstract: bdw67c TIP36B BD250B 10/75 10 min 15 15 0.6 typ 0.3 typ 10 3.0 3 125 125 100 BD249C TIP35C BD250C TIP36C 10
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BDW67A BDW66A BDW67B BDW66B MJE4340 MJE4350 BDW66C bdw67c TO218 package B0249A MJE4353

TIC106D equivalent

Abstract: TIC106M SCR BD250B BD250C TIP36B TIP36C -1 -2 -2 -3 -3 -4 -4 -5 -6 -6 -6 -6 -8 -10 -10 -15 -15 , TIP2955 BD250B BD250C TIP36B TIP36C General Purpose NPN Darlingtons COLLECTOR BASE EMITTER , BD249B BD249C BD250 BD250A BD250B BD250C BD539 BD539A BD539B BD539C BD539D BD540 BD540A
Bourns
Original
TIC106D equivalent TIC106M SCR TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent TIP30C BD240C TIPP32C BD242B BD242C TIP32B
Abstract: 25rain 25min 25mln 4/1 4/1 4/1.5 4/1.5 4/1.5 80 80 125 125 125 BD250 BD250A BD250B -
OCR Scan
BD234 BD235 BD236 BD237 BD238 T0126

TIC106M SCR

Abstract: TIC106D equivalent BD250B BD250C TIP36B TIP36C -1 -2 -2 -3 -3 -4 -4 -5 -6 -6 -6 -6 -8 -10 -10 -15 -15 , TIP2955 BD250B BD250C TIP36B TIP36C General Purpose NPN Darlingtons COLLECTOR BASE EMITTER , BD249B BD249C BD250 BD250A BD250B BD250C BD539 BD539A BD539B BD539C BD539D BD540 BD540A
Bourns
Original
TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 BTB06-600 TIP36C EQUIVALENT TIC126D equivalent TIP32C BD540C BD244B BD244C TIP42B TIP42C

R3381

Abstract: R3498 BD249C-S BD249-S BD250 BD250A BD250A-S BD250B BD250B-S BD250C BD250C-S BD250-S BD251 BD251-S
Bourns
Original
MP150SG BDW85 BDW85-S R3381 R3381-S R3498 a101 transistor buv49 BLBF40 MG15G-1040R MG15F-1040R E34947 BD245

r3381

Abstract: R3498 BD249B BD249B-S BD249C BD249C-S BD249-S BD250 BD250A BD250A-S BD250B BD250B-S BD250C BD250C-S
Bourns
Original
BU466 TIC253D-S TIC263D-S TIC263M MP150s tipl763 transistor BD245 buv48s BD245A BD245A-S BD245B BD245B-S BD245C BD245C-S

bd639

Abstract: bd640 S.Ã 4 25 5.0 4 25 5.0 4 25 5.0 4 3 "" 3 3 3 BD250 BD250A BD250B B0250C PNP PNP PNP PNP 55 45 5 70 60
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BD239A BD239B B0239C BD240 BD240A BD240B bd639 bd640 BF467 B0544 bd639 npn B0239

JE350

Abstract: je180 BD245B BD245C BD246 BD246A BD246B BD246C BD249 BD249A BD249B BD249C BD250 BD250A BD250B BD250C BD253
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BD325 JE182 JE350 je180 MJ13004 TP33C JE172 BD135 BD136 BD137 BD138 BD139 BD140

DK53

Abstract: dk52 BD245B BD245C BD246 BD246A BD246B BD246C BD249 BD249A BD249B BD249C BD250 BD250A BD250B
STMicroelectronics
Original
MJ2955 BUL128 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

B0241A

Abstract: TIP 32 transistor BD250B BD250C TIP36B TIP36C -1 -2 -2 -3 -3 -4 -4 -5 -6 -6 -6 -6 -8 -10 -10 -15 -15 , TIP2955 BD250B BD250C TIP36B TIP36C General Purpose NPN Darlingtons COLLECTOR BASE EMITTER , BD249B BD249C BD250 BD250A BD250B BD250C BD539 BD539A BD539B BD539C BD539D BD540 BD540A
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OCR Scan
BD241 BD241A BD241B BD241C B0241A TIP 32 transistor transistor TIP 32 TIP 35 transistor transistor BD 246 BDX 241 BD242A-C
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