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BD245/A/B/C

Catalog Datasheet MFG & Type PDF Document Tags

BD245C

Abstract: bd245 SavantIC Semiconductor Product Specification BD245/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD246/A/B/C APPLICATIONS ·For use in medium power , SavantIC Semiconductor Product Specification BD245/A/B/C Silicon NPN Power Transistors , ) 3 BD245/A/B/C - , ratings(Ta= ) SYMBOL PARAMETER CONDITIONS BD245 VCBO Collector-base voltage BD245A
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BD245C BD245/A/B/C BD246/A/B/C BD245/245A BD245B/245C

transistor BD245

Abstract: BD245C isc Silicon NPN Power Transistor BD245/A/B/C ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , Silicon NPN Power Transistor isc Websitewww.iscsemi.cn isc Product Specification BD245/A/B/C , 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B , ICES VCE= 55V; VBE= 0 VCE= 115V; VBE= 0 BD245/A VCE= 30V;IB= 0 BD245B/C VCE= 60V;IB , isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A
INCHANGE Semiconductor
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transistor BD245 BD245 transistor NPN Transistor 10A 70V BD246 EQUIVALENT NPN Transistor VCEO 80V 100V BD245/A BD245B/C

BD246

Abstract: BD246C SavantIC Semiconductor Product Specification BD246/A/B/C Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD245/A/B/C APPLICATIONS ·For use in medium power , SavantIC Semiconductor Product Specification BD246/A/B/C Silicon PNP Power Transistors , tolerance:±0.1mm) 3 BD246/A/B/C - , Open collector -5 V IC Collector current -10 A ICM Collector current-peak
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BD246 BD246A BD246B BD246C BD246/246A BD246B/246C

BD246

Abstract: BD245 BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C , COMSET SEMICONDUCTORS Value Unit 1.56 42 °C / W °C / W 1/3 BD246, A, B, C , COMSET SEMICONDUCTORS - 0.8 - 2/3 BD246, A, B, C MECHANICAL DATA CASE TO-3P Pin 1 , to +150 -65 to +150 V V A A Watts °C THERMAL CHARACTERISTICS Symbol RthJC RthJA 12
Comset Semiconductors
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BD245C

Abstract: bd245 Series 80 W at 25'C Case Temperature B C SOT-93 PACKAGE (TOP VIEW) 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available E C Pin 2 is in electrical , V V V A A A W W *CM S B 15 3 80 3 62.5 -65 to +150 -65 t o +150 250 mJ °C This , COLLECTOR CURRENT !c - Collector Current - A Figure 3. Power INNOVATIONS P 2-37 BD245 , otherwise noted) RATING 8D245 Colleclor-em itter voltage {Rgg = 100 12} BD245A BD245B BD245C BD245 C
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b0245c B0245C TIS633AA

transistor BD245

Abstract: BD245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak , /TSP1203_SOT93_POM.pdf. SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with , 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate , characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD245 V(BR
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TCS633AG TCS633AB TCS633AC SAS633AC

BD245C

Abstract: BD245 Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 , A W W mJ °C °C °C V V UNIT Collector-emitter voltage (IC = 30 mA) Emitter-base voltage , 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. E T E L O S B O
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transistor BD245

Abstract: BD245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current , VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA , voltage 3 A Ptot 80 W Ptot 3 W ½LIC2 62.5 mJ °C Tj -65 to +150 , electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN BD245 V(BR)CEO
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bd245c

Abstract: transistor BD245 characteristics at 25°C case temperature PARAMETER TEST CONDITIONS BD245 V ( b r )c e o MIN 45 60 80 100 , Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current , mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD245 , to +150 250 V V A A A W W mJ °C °C °C 1"stg Tl This value applies for tp < 0.3 ms, duty , resistive-load-switching characteristics at 25°C case temperature PARAMETER ton t0ff Turn-on time Turn-off time lc = 1 A
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Y parameters of transistors lc 245a

transistor BD245

Abstract: BD245A BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current , VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA , voltage 3 A Ptot 80 W Ptot 3 W ½LIC2 62.5 mJ °C Tj -65 to +150 , electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN BD245 V(BR)CEO
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transistor BD245

Abstract: bd245c Series q 80 W at 25°C Case Temperature q 10 A Continuous Collector Current q 15 A Peak Collector Current q SOT-93 PACKAGE (TOP VIEW) Customer-Specified Selections Available B 1 , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD245 Collector-emitter , IC - Collector Current - A SAS633AC 1·0 0·1 BD245 BD245A BD245B BD245C 0·01 1·0 , BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations
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tip 420 transistor

Abstract: BD245C TEXAS INSTRUMENTS 0,3 BD 243 A BD 244 A 65 60 6 30 0,3 BD 243 B BD 244 B 65 80 6 30 0,3 BD 243 C BD 244 C 65 100 , 40 125 1 TIP 33 A TIP 34 A 80 60 10 40 125 1 TIP 33 B TIP 34 B 80 80 10 40 125 1 TIP 33 C TIP 34 C , -2 40 0,2 BD 240 A BD 239 A 30 -60 -2 40 0,2 BD 240 B BD 239 B 30 -80 -2 40 0,2 BD 240 C BD 239 C 30 -100 -2 40 0,2 BD 242 BD 241 40 -45 -3 25 1 BD 242 A BD 241 A 40 -60 -3 25 1 BD 242 B BD 241 B 40 -80 -3 25 1 BD 242 C BD 241 C 40 -100 -3 25 1 BD 244 BD 243 65 -45 -6 30 0,3 BD 244 A '
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tip 420 transistor BD245C TEXAS INSTRUMENTS transistor tip 420 transistor BD 246 transistor tip 3055 tip 420 BD246A-C 40PEP 80PEP

B0246

Abstract: BD2468 Series 80 W at 25°C Case Temperature B C SOT-93 PA C K A G E (TOP VIEW) 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available k c 1 w I \ 3 /= * Pin 2 is in electrical contact with the mounting b P/ UNIT V V V A A A W W mJ °C °C °C absolute , -1.6 -3 20 3 V V gE = 0 V g6 = 0 V aE = 0 V BE = 0 iB = 0 !g = 0 !c = 0 1 c » -1 A ic » -3 A lc = , ETER ton toff T E S T CONDITIONS * MIN TYP MAX UNIT Turn-on time Turn-off time !c " '1 A VBE(ofl
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B0246 BD2468 B0-246 B0246B

BD246c

Abstract: Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 , +150 250 V A A A W W mJ °C °C °C V V UNIT Collector-emitter voltage (IC = -30 mA) Emitter-base , 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. E T E L O S B O
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TCS634AB TCS634AC SAS634AC

BD246

Abstract: transistor BD245 '¢ Designed for Complementary Use with the BD245 Series â'¢ 80 W at 25°C Case Temperature â'¢ 10 A Continuous Collector Current â'¢ 15 A Peak Collector Current â'¢ Customer-Specified Selections Available B , current "b -3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 , PARAMETER TEST CONDITIONS f MIN TYP MAX UNIT ton Turn-on time lc = -1A lB(on) = -0.1A I B(off) = 0.1 A VÃE , COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT tcs634ab CD O) 05 Ã" > c o 03 aj CO E LU O O a) ô O
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BD246

Abstract: transistor BD245 with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA , IB Emitter-base voltage -3 A Ptot 80 W Ptot 3 W ½LIC2 62.5 mJ °C , TC = 25 °C -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 IC - Collector Current - A
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Abstract: 37E SEMELAB LTD Type No. Reliability Polarity Option Package v CEO â c cont . hF E @ Ã1331Ã7 » 000003^ T - 3^-01 Vch /Ic »T Pd BD234 BD235 BD236 BD237 BD238 PNP NPN PNP NPN PNP T0126 T0126 T0126 T0126 T0126 45 60 60 80 80 2 , 3M 3M 40 65 65 65 65 BD244 BD244A BD244B BD244C BD245 PNP PNP PNP PNP NPN , 125 125 50 36 â ! . ' \ i T ir t r if ' i 7 «51116 15M 7M 1 -
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BD239 BD239A BD239B BD239C BD240 T0220

R3381

Abstract: R3498 change notification covers a change to the epoxy mold compound used for encapsulation of SOT-93 products , SnAgCu Qualification Tests: Stress Test/Conditions HTRB, 150 °C, 1000 h with bias 85 °C/85 % RH, 50 V, 1000 h Temperature Cycle -65/+150 °C, 200cs Solder Heat Lead Pull QSS (1) 009-101 009-102 , °C/85 % RH Temperature Cycle Solder Heat Lead Pull Stress Test Completion Date: June 2006 , Sold BD245 BD245A BD245A-S BD245B BD245B-S BD245C BD245C-S BD245-S BD246 BD246A BD246A-S
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MP150SG BD250C-S BD251 BDW85 BDW85-S R3381 R3498 a101 transistor R3381-S buv49 BLBF40 MG15G-1040R MG15F-1040R E34947 BD246B-S

bd246c

Abstract: bd246 Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak , /TSP1203_SOT93_POM.pdf. SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise , -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp 0.3 ms, duty cycle 10 , resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff TEST CONDITIONS IC = -1 A VBE
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TCS634AG

BD246C

Abstract: BD246 with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA , IB Emitter-base voltage -3 A Ptot 80 W Ptot 3 W ½LIC2 62.5 mJ °C , TC = 25 °C -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 IC - Collector Current - A
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transistor bd246a
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