500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

BD245 transistor

Catalog Datasheet MFG & Type PDF Document Tags

transistor BD245

Abstract: BD245C isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A , isc Silicon NPN Power Transistor BD245/A/B/C ELECTRICAL CHARACTERISTICS TC=25 unless otherwise , Silicon NPN Power Transistor isc Websitewww.iscsemi.cn isc Product Specification BD245/A/B/C , 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B , ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BD245 VEBO Collector-Emitter Voltage
INCHANGE Semiconductor
Original
transistor BD245 BD245 transistor NPN Transistor 10A 70V BD246 EQUIVALENT NPN Transistor VCEO 80V 100V BD245/A/B/C BD246/A/B/C BD245/A BD245B/C

BD245C

Abstract: bd245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997. Power Innovations , otherwise noted) RATING 8D245 Colleclor-em itter voltage {Rgg = 100 12} BD245A BD245B BD245C BD245 C , is based on the capability o f the transistor to operate safely in a circuit of: L = 20 mH, lB{or>i = , of alt parameters. P 2-35 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS JUNE , Coltector-emitter ,-g a ^ y y r , voltage TEST CONDfTIONS BD245 (BRjceo MIN 45 60 80 100 BD245A BD245B 8D245C
-
OCR Scan
b0245c BD246 B0245C TIS633AA

transistor BD245

Abstract: BD245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary , noted) RATING BD245 Collector-emitter voltage (RBE = 100 ) BD245A BD245B BD245C BD245 Collector-emitter , at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate safely , without notice. BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD245 V(BR
Bourns
Original
TCS633AG TCS633AB TCS633AC SAS633AC

BD245C

Abstract: BD245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary , °C case temperature (unless otherwise noted) RATING BD245 Collector-emitter voltage (RBE = 100 ) BD245A , 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of , BD245C BD245 BD245A BD245B V CEO BD245C VEBO IC IB ICM Ptot Ptot Tj ½LIC2 Tstg TL PRODUCT , . BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case
Bourns
Original

transistor BD245

Abstract: BD245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use , temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate , . NOITAMROFNI NOTES: 1. 2. 3. 4. V 115 BD245 Collector-emitter voltage (IC = 30 mA) UNIT 55 BD245 BD245A VALUE TCUDORP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS
Bourns
Original

transistor BD245

Abstract: BD245A BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use , temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate , . NOITAMROFNI NOTES: 1. 2. 3. 4. V 115 BD245 Collector-emitter voltage (IC = 30 mA) UNIT 55 BD245 BD245A VALUE TCUDORP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS
Bourns
Original

bd245c

Abstract: transistor BD245 slightly with transistor parameters. PRODUCT INFORMATION 2 BD245, BD245A, BD245B, BD245C NPN , BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright© 1997, Power Innovations , mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD245 Collector-emitter voltage (RBE = 100 £2) BD245A BD245B BD245C BD245 Collector-emitter voltage (lc = 30 mA) BD245A , °C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor
-
OCR Scan
Y parameters of transistors lc 245a

transistor BD245

Abstract: bd245c BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD245 Collector-emitter voltage (RBE = 100 ) BD245A BD245B VALUE VCER 70 90 BD245C V 115 BD245 , °C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor , processing does not necessarily include testing of all parameters. 1 BD245, BD245A, BD245B, BD245C
Power Innovations
Original

tip 420 transistor

Abstract: BD245C TEXAS INSTRUMENTS are nominal; exact values vary slightly with transistor parameters. 2-48 Texas Instruments BD245 , BD245, BD245A, BD245B, BD245C FOR POWER AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , (unless otherwise noted) BD245 Collector-Emitter Voltage (FIbe = 100 fi).55 V , based on the capability of the transistor to operate safely in the cir VBB2 = 0 V, Rs = 0.1 Vcc = 10 V , published at a later date. Texas Instruments 2-47 BD245, BD245A, BD245B, BD245C electrical
-
OCR Scan
tip 420 transistor BD245C TEXAS INSTRUMENTS transistor tip 420 transistor BD 246 transistor tip 3055 tip 420 BD246A-C 40PEP 80PEP

R3381

Abstract: R3498 Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change This , . Qualification Plan: Following page. SOT-93 Packaged Power Transistor & Thyristor Product Change , Material Marking Termination Finish Bipolar Transistor As Qual Plan Table (Row 2) Al AlTiNiAu PSI , 2031 2004 SS/Accept 129/1 129/1 129/1 22/0 22/0 SOT-93 Packaged Power Transistor & , Lot 1 R3381-S Transistor SD140BX 65/0 65/0 65/0 12/0 12/0 Lot 2 BUV48A Transistor
Bourns
Original
MP150SG BD250C-S BD251 BDW85 BDW85-S R3381 R3498 a101 transistor buv49 transistor 1015 MG15G-1040R MG15F-1040R E34947 BD245A-S BD245B-S

B0246

Abstract: BD2468 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 19&7. Power Innovations Limited, UK JUNE 1973 - REVISED M ARCH 1997 · · · · · Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature B C SOT-93 PA C K A G E (TOP VIEW) 10 A Continuous Collector , temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate , Voltage and current values shown are nominal; exact values vary slightly with transistor parameters
-
OCR Scan
B0246 BD2468 B0-246 B0246B

BD246c

Abstract: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 , 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of , values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2
Bourns
Original
TCS634AB TCS634AC SAS634AC

r3381

Abstract: R3498 Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change This , . Qualification Plan: Following page. SOT-93 Packaged Power Transistor & Thyristor Product Change , Transistor As Qual Plan Table (Row 2) Al AlTiNiAu PSI,Technologies, Manila, Philippines 3/SOT-93 MG15F , SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - , Test Completion Date: June 2006 Lot 1 R3381-S Transistor SD140BX 65/0 65/0 65/0 12/0 12/0
Bourns
Original
BU466 TIC253D-S TIC263D-S TIC263M MP150s tipl763 buv48s TRANSISTOR 612 BD245C-S BD245-S BD246A-S BD246B-S BD246C-S BD246-S

BD246

Abstract: transistor BD245 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP , the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = , slightly with transistor parameters. TCUDORP 2 IC = -1 A Turn-off time NOITAMROFNI
Bourns
Original

transistor BD245

Abstract: BD246 TRANSYS ELECTRONICS LIMITED BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS â'¢ Designed for Complementary Use with the BD245 Series â'¢ 80 W at 25°C Case Temperature â'¢ 10 A Continuous Collector Current â'¢ 15 A Peak Collector Current â'¢ Customer-Specified Selections Available B , temperature at the rate of 24 mW/°C. 4. This rating is based on the capability of the transistor to operate , current values shown are nominal; exact values vary slightly with transistor parameters. BD246, BD246A
-
OCR Scan

bd246c

Abstract: bd246 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available This model is currently available, but not , temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate , values vary slightly with transistor parameters. PRODUCT 2 INFORMATION JUNE 1973 - REVISED
Bourns
Original
TCS634AG

BD246C

Abstract: BD246 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP , the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = , slightly with transistor parameters. TCUDORP 2 IC = -1 A Turn-off time NOITAMROFNI
Bourns
Original
transistor bd246a

BD246C

Abstract: transistor BD245 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 · · · · · Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current , based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, le(on) = -0.4 A , t Voltage and current values shown are nominal; exact values vary slightly with transistor
-
OCR Scan

BD245

Abstract: transistor BD245 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK q JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD245 Series q 80 W at 25°C Case Temperature q 10 A Continuous Collector Current q 15 A Peak , capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE , transistor parameters. PRODUCT 2 INFORMATION BD246, BD246A, BD246B, BD246C PNP SILICON POWER
Power Innovations
Original

TIC106D equivalent

Abstract: TIC106M SCR -220 Transistor & Darlington Cross Reference Industry Part No. Recommended Bourns Equivalent BD239 , BD244A BD244B BD244C BD245 BD245A BD245B BD245C BD246 BD246A BD246B BD246C BD249 BD249A
Bourns
Original
TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIP30C BD240C TIPP32C BD242B BD242C TIP32B
Showing first 20 results.