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BD244C ON Semiconductor 6.0 A, 100 V PNP Bipolar Power Transistor, 1200-BLKBG visit Digikey

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BD244C Datasheet

Part Manufacturer Description PDF Type
BD244C Bourns PNP SILICON POWER TRANSISTORS Original
BD244C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original
BD244C Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BD244C Motorola Complementary Silicon Plastic Power Transistors Original
BD244C On Semiconductor Complementary Silicon Plastic Power Transistors Original
BD244C Philips Semiconductors Silicon Epitaxial Base Power Transistors Original
BD244C Power Innovations PNP SILICON POWER TRANSISTORS Original
BD244C STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original
BD244C STMicroelectronics Complementary power transistors Original
BD244C USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. Original
BD244C Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS Scan
BD244C Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan
BD244C Continental Device India Semiconductor Device Data Book 1996 Scan
BD244C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan
BD244C Ferranti Semiconductors Quick Reference Guide 1985 Scan
BD244C Ferranti Semiconductors Power Transistors 1977 Scan
BD244C General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. Scan
BD244C Mospec Complementary Silicon Plastic Power Transistor Scan
BD244C Mospec POWER TRANSISTORS(6A,65W) Scan
BD244C Motorola Motorola Semiconductor Data & Cross Reference Book Scan
Showing first 20 results.

BD244C

Catalog Datasheet MFG & Type PDF Document Tags

bd243c

Abstract: bd244c coupled with very low saturation voltage. The PNP type is BD244C. Table 1. 2 3 TO , BD243C BD244C Complementary power transistors Features s . Complementary NPN-PNP devices , Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value BD243C (NPN) Unit BD244C (PNP) VCBO
STMicroelectronics
Original

bd244

Abstract: TRANSISTOR BD244 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , "¦) BD244A BD244B VALUE -55 VCER -70 -115 BD244 -45 BD244A BD244B V CEO BD244C Emitter-base voltage V -90 BD244C Collector-emitter voltage (IC = -30 mA) UNIT -60 V , without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C
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TRANSISTOR BD244 BD243 TCS634AF SAS634AD TIS633AB

BD243B

Abstract: bd244c ORDERING INFORMATION Device BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package , BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices , ) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 , Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Vdc
ON Semiconductor
Original
1N5825 MSD6100 BD243B/D
Abstract: saturation voltage. The PNP type is BD244C. let o Figure 1. )(s Internal schematic diagram , BD243C BD244C Complementary power transistors Features â  . Complementary NPN-PNP , Marking Package Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum , BD244C (PNP) VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage STMicroelectronics
Original

BD244C

Abstract: BD243C coupled with very low saturation voltage. The PNP type is BD244C. Table 1. 2 3 TO , BD243C BD244C Complementary power transistors Features . Complementary NPN-PNP devices , Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value BD243C (NPN) Unit BD244C (PNP) VCBO
STMicroelectronics
Original
npn transistor bd243c complementary npn-pnp power transistors st bd243c Transistor bd243c JESD97 st bd244c

BD243

Abstract: BD244 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-emitter voltage (IC = -30 mA) UNIT -55 BD244C BD244A VALUE -45 VCEO BD244C -60 V , BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , BD244C -0.4 Collector cut-off VCE = -30 V IB = 0 BD244/244A -0.7 current V CE =
Power Innovations
Original

BD243C

Abstract: BD244C complementary PNP type is BD244C. Internal Schematic Diagram Order Codes Part Number Marking Package Packing BD243C BD243C TO-220 TUBE BD244C BD244C TO-220 TUBE September 2005 Rev 4 1/8 www.st.com 8 BD243C - BD244C 1 Absolute Maximum Ratings 1 , BD243C BD244C COMPLEMENTARY SILICON POWER TRANSISTOR Features STmicroelectronics PREFERRED , (NPN) Unit BD244C (PNP) VCBO Collector-Base Voltage (IE = 0) 100 V VCEO
STMicroelectronics
Original
MLD-PWR/05/1267

BD244

Abstract: b0244c BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS â'¢ Designed for Complementary Use , 100 Q) BD244 BD244A BD244B BD244C VCER -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD244 BD244A BD244B BD244C VCEO -45 -60 -80 -100 V Emitter-base voltage VEBO -5 V Continuous , LIMITED BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical characteristics at 25 , Collector-emitter breakdown voltage lc = -30 mA (see Note 5) lB = 0 BD244A BD244B BD244C -60 -80 -100 V VCE
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OCR Scan
b0244c B0244A T0220

BD244C

Abstract: IC 3180 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C · High Current Gain Bandwidth , Range Symbol VCEO VCB VEB BD243B BD243C* PNP BD244B BD244C* ·Motorola Preferred Dtvie* NPN BD243B BD244B 80 80 5.0 6 10 2.0 BD243C BD244C 100 100 Unit Vdc Vdc Vdc Adc 6 AMPERE POWER , D244B BD244C ELECTRICAL CHARACTERISTICS (T c - 25°C unless otherwise noted) Characteristic Collector-Emltter Sustaining Voltage (1) (IC - 30 mAdc, I b - 0) BD243B, BD244B BD243C, BD244C 'CEO BD243B, BD243C
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OCR Scan
D243B IC 3180 transistor c 3181 D243C

bd244

Abstract: BD243 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD244B VCER -70 BD244C -115 -45 BD244A BD244B V CEO -60 V -80 -100 BD244C VEBO Emitter-base voltage Continuous collector current Peak , subject to change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C
Bourns
Original

bd243c

Abstract: Transistor bd243c BD243C, BD244C High Current Gain Bandwidth Product f j = 3.0 MHz (Min) @ Iq = 500 mAdc Compact T 0 -2 2 0 AB Package BD243B BD243C* BD244B BD244C* ` Motorola Preferred Device NPN PNP · · MAXIMUM , BD243C BD244C 100 100 Unit Vdc Vdc Vdc Ade 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 8 , , Inc. 1995 ftf) M O T O R O L A BD243B BD243C BD244B BD244C ELECTRICAL CHARACTERISTICS (T q = 2 , m A d c , I b = 0) BD243B, BD244B BD243C, BD244C 'CEO BD243B, BD243C, BD244B, BD244C Ic e s BD243B
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OCR Scan

TRANSISTOR BD244

Abstract: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , BD244C BD244 Collector-emitter voltage (IC = -30 mA) Emitter-base voltage Continuous collector current BD244A BD244B BD244C UNIT -55 E T E L O S B O BD244B VALUE V CEO , change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C
Bourns
Original

1N5825

Abstract: BD243B · Collector ­ Emitter Saturation Voltage - BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc , Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc , /D BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î Î , BD243C, BD244C Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO Unit Vdc mAdc BD243B
ON Semiconductor
Original

BD243C APPLICATION

Abstract: 1N5825 BD244C BD244CG Package Shipping TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO , BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices , 100 Vdc (Min) - BD243C, BD244C ·High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 , Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Vdc 80 100
ON Semiconductor
Original
BD243C APPLICATION
Abstract: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , -60 -100 -5 -6 -3 2 -80 V CEO VEBO ICM Ptot ½LIC2 Tstg TL Tj Ptot IB IC V V A A A -90 V UNIT BD244C Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD244A BD244 BD244B BD244C BD244B , change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , = 1 kHz f = 1 MHz 20 3 30 15 -1.5 -2 V V IB = 0 BD244A BD244B BD244C BD244 BD244A BD244B BD244C Bourns
Original
TCS634AH TCS634AE
Abstract: BD243CG BD244B BD244BG BD244C BD244CG Package Shippingâ'  TOâ'220 TOâ'220 (Pbâ'Free , BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , ' BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Pbâ'Free , BD243C, BD244C VCEO Collectorâ'Base Voltage BD243B, BD244B BD243C, BD244C Emitterâ'Base , Vdc, IB = 0) BD243B, BD244B BD243C, BD244C BD243B, BD243C, BD244B, BD244C BD243B, BD244B ON Semiconductor
Original
220AB
Abstract: BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , * MAXIMUM RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Collector-Base Voltage BD243B, BD244B BD243C, BD244C Emitter-Base Voltage Collector Current - Continuous Collector Current - , -220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail BD244CG 1 September, 2013 - Rev. 14 Publication Order Number: BD243B/D BD243B, BD243C (NPN), BD244B, BD244C ON Semiconductor
Original

BD243

Abstract: BD244 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD244B VCER -70 BD244C -115 -45 BD244A BD244B V CEO -60 V -80 -100 BD244C VEBO Emitter-base voltage Continuous collector current Peak , subject to change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C
Bourns
Original

1N5825

Abstract: BD243B · Collector ­ Emitter Saturation Voltage - BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc , Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc , : BD243B/D BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î , mAdc, IB = 0) mAdc Min Unit - - VCEO(sus) BD243B, BD244B BD243B BD243C, BD244C
ON Semiconductor
Original

BD243CG

Abstract: WT1D BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package TO-220 TO-220 (Pb-Free) TO-220 TO , BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages , RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Collector-Base Voltage BD243B, BD244B BD243C, BD244C Symbol VCEO Value 80 100 80 100 5.0 6 10 2.0 65 0.52 -65 to +150 Unit Vdc 1 Vdc 2 3
ON Semiconductor
Original
WT1D

transistor tip 3055

Abstract: Tip 3054 BD244, BD244A, BD244B, BD244C FOR POWER AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , . , ;'pigmentary data may be published at a later date. Texas Instruments 2-45 BD244, BD244A, BD244B, BD244C electrical characteristics at 25 °C case temperature PARAMETER BD244 BD244A BD244B BD244C TEST CONDIT , , BD244A, BD244B, BD244C s voltage and current waveforms Dissipation derating curve Ptot='
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OCR Scan
transistor tip 3055 Tip 3054 transistor BD 240 BD243A..C BD 245 TIP 50 transistor BD243A-C 40PEP 80PEP

BD243C

Abstract: BD244C BD243B/BD243C BD244B/BD244C ® COMPLEMENTARY SILICON POWER TRANSISTORS s , switching applications. The complementary PNP types are BD244B and BD244C respectively. 1 2 3 , t NPN BD243B BD243C PNP BD244B BD244C 100 V 100 V V CBO , / BD244B / BD244C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal , ition s I C = 30 mA for BD243B/BD244B for BD243C/BD244C Collector-Emitter Saturation Voltage
STMicroelectronics
Original
DSA0082460 morocco bd244c BD244B/BD244C P011C

1N5825

Abstract: BD243B to + 150 CASE 221A­06 TO­220AB W/_C _C Symbol BD243B BD244B BD243C BD244C , , BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C · High Current Gain Bandwidth Product fT = 3.0 MHz , * PNP BD244B BD244C* . . . designed for use in general purpose amplifier and switching applications , 0) (VCE = 100 Vdc, VEB = 0) BD243B, BD244B BD243C, BD244C mAdc ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD243B, BD243C, BD244B, BD244C ICEO BD243B, BD244B
Motorola
Original
Abstract: general purpose amplifier and switching applications. BD243B BD243C * BD244B BD244C * *ON , = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 , MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB BD243B BD244B 80 80 BD243C BD244C 100 100 Unit Vdc Vdc , ) BD243B, BD243B BD244B BD243C, BD244C ICEO ICES 0.7 mAdc µAdc BD243B, BD243C, BD244B, BD244C Collector , = 0) BD243B, BD244B BD243C, BD244C - - - 400 400 1.0 IEBO mAdc ON CHARACTERISTICS (1) DC Current ON Semiconductor
Original
Showing first 20 results.