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Part : BD242CG Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1939 Price Each : $0.2049
Part : BD242C Supplier : SPC Multicomp Manufacturer : Newark element14 Stock : 25 Best Price : $0.2880 Price Each : $0.2880
Part : BD242CG Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 297 Best Price : $0.2360 Price Each : $0.68
Part : BD242CG Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.20 Price Each : $0.2350
Part : BD242C Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 228 Best Price : $0.74 Price Each : $0.74
Part : BD242C Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 44 Best Price : $0.20 Price Each : $0.20
Part : BD242CG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2 Best Price : $0.54 Price Each : $0.54
Part : BD242C Supplier : ON Semiconductor Manufacturer : America II Electronics Stock : 3,855 Best Price : - Price Each : -
Part : BD242CG Supplier : ON Semiconductor Manufacturer : ComSIT Stock : 98 Best Price : - Price Each : -
Part : TBD242C Supplier : Continental Device India Manufacturer : Schukat electronic Stock : 1,250 Best Price : €0.1785 Price Each : €0.2770
Part : BD242C Supplier : 95 Manufacturer : Chip One Exchange Stock : 3,545 Best Price : - Price Each : -
Part : BD242C Supplier : STMicroelectronics Manufacturer : Chip One Exchange Stock : 6,868 Best Price : - Price Each : -
Part : BD242CG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 430 Best Price : $1.53 Price Each : $1.53
Part : BD242CG Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 297 Best Price : $0.27 Price Each : $0.84
Part : BD242CG Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 398 Best Price : £0.25 Price Each : £0.5550
Part : BD242CG Supplier : ON SEMICONDUCTOR Manufacturer : New Advantage Stock : 7,250 Best Price : $0.2857 Price Each : $0.3077
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BD242C Datasheet

Part Manufacturer Description PDF Type
BD242C Bourns PNP SILICON POWER TRANSISTORS Original
BD242C Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BD242C Motorola 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS Original
BD242C Motorola Complementary Silicon Plastic Power Transistors Original
BD242C On Semiconductor POWER TRANSISTORS COMPLEMENTARY SILICON Original
BD242C On Semiconductor Complementary Silicon Plastic Power Transistor Original
BD242C Philips Semiconductors Silicon Epitaxial Base Power Transistors Original
BD242C Power Innovations PNP SILICON POWER TRANSISTORS Original
BD242C STMicroelectronics complementary power transistor Original
BD242C STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original
BD242C USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. Original
BD242C Various Russian Datasheets Transistor Original
BD242C Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS Scan
BD242C Continental Device India Semiconductor Device Data Book 1996 Scan
BD242C Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan
BD242C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan
BD242C Ferranti Semiconductors Quick Reference Guide 1985 Scan
BD242C Ferranti Semiconductors Power Transistors 1977 Scan
BD242C General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. Scan
BD242C Mospec POWER TRANSISTORS(3A,40W) Scan
Showing first 20 results.

BD242C

Catalog Datasheet MFG & Type PDF Document Tags

BD241

Abstract: BD241C ) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Collector-Emitter Voltage (RBE = 100 ) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Emitter-Base Voltage (IC = 0) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A IC BD241B/BD242B BD241C/BD242C Collector Current BD241/BD242 BD241A/BD242A ICM BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Base Current BD241B/BD242B BD241C/BD242C BD241/BD242 @ Tamb BD241A/BD242A = 25° C BD241B/BD242B BD241C/BD242C Power Dissipation
Comset Semiconductors
Original
BD241 BD242 BD241C BD242A BD241A BD241B BD241C/BD242C

D242B

Abstract: D241C Vdc (Min.) BD241B, BD242B = 100 Vdc (Min.) BD241C, BD242C · High Current Gain - Bandwidth Product f j , BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Watts W /"C °C BD241B BD241C* PNP NPN BD242B BD242C , Bipolar Power Transistor Device Data BD241B B D241C BD242B BD242C ELECTRICAL CHARACTERISTICS (T c - , BD241C, BD242C ie b o Symbol Min. Max. Unit VCEO BD241B, BD242B BD241C, BD242C 'CEO BD241B, BD241C, BD242B, BD242C ic e s Vdc 80 100 0.3 mAdc pAdc 200 200 mAdc 1.0 Vdc Vdc
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OCR Scan
D242B BD242B equivalent

BD241C

Abstract: MARKING 242B BD241C* (NPN), BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic , Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain - Bandwidth , 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Emitter Voltage , Assembly Location = Year = Work Week ORDERING INFORMATION Device BD241C BD242B BD242C Package TO , ), BD242C* (PNP) 40 PD, POWER DISSIPATION (WATTS) 30 20 10 0 0 20 40 60 80
ON Semiconductor
Original
MARKING 242B npn transistor 400 volts.10 amperes 241c

BD2428

Abstract: HEP transistors BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations , 8D242B BD242C BD242 VC£R VALUE -55 -70 -90 -115 -46 -60 VCEO -80 -100 VEBO fC !c m PttJt P.ot ViLIc2 Ti T , CoHector-emltter voltage (ic = -30 mA) BD242A BD242B BD242C V Emitter-base vottage Continuous collector , , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS JU N E 1973 - REVISED M ARCH 1997 electrical , 0 BD242B BD242C BD242 BD242A BD2428 BD242C BD242/242A BD242B/242C Collector-emltter icES
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OCR Scan
HEP transistors B0242A

NT 407 F TRANSISTOR

Abstract: BD241B Emitter­Base Voltage Symbol BD241B BD242B BD241C BD242C Unit Collector­Emitter Voltage VCEO , - VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C · High , *Motorola Preferred Device BD241B BD241C* PNP BD242B BD242C* . . . designed for use in general , , VEB = 0) mAdc 200 200 BD241B, BD242B BD241C, BD242C ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD241B, BD241C, BD242B, BD242C ICEO BD241B, BD242B BD241C
Motorola
Original
NT 407 F TRANSISTOR NT 407 F power transistor BD241B/D
Abstract: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , UNIT BD242C Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD242A BD242 BD242B BD242C BD242B Continuous collector current Continuous base current Peak collector current (see , Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C PNP SILICON POWER , ) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 25 10 -1.2 -1.8 V V IB = 0 BD242A BD242B BD242C BD242 Bourns
Original
TCS632AH TCS632AB TCS632AC SAS632AD TIS631AA

BD242

Abstract: BD242B -80 BD242C VEBO UNIT -55 BD242C BD242A VCEO OND EMIC GE S BD242A VCBO , ) Collector-emitter sustaining voltage UNIT -60 IC=30mA; IB=0 V BD242B -80 BD242C VCEsat MAX , BD242B IN TOR UC BD242C -0.2 mA -1 mA VCE=-80V; VBE=0 VCE=-100V; VBE
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Original
BD242/A/B/C BD241/A/B/C BD242/A BD242B/C

bd242 TRANSISTOR equivalent

Abstract: BD242B BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD242B VCER -70 BD242C -115 -45 BD242A BD242B V CEO -60 V -80 -100 BD242C VEBO Continuous collector current Peak collector current (see , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C , 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 V VCE = -55 V
Bourns
Original
bd242 TRANSISTOR equivalent 631AA
Abstract: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , "¦) BD242A BD242B VALUE -55 VCER -70 -115 BD242 -45 BD242A BD242B V CEO BD242C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) V -90 BD242C , , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , BD242A IB = 0 (see Note 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 -
Original

BD241C-D

Abstract: BD241C BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices , ·Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C ·High Current Gain - Bandwidth , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit , , Junction-to-Case RqJC 3.125 °C/W BD242BG TO-220AB (Pb-Free) 50 Units/Rail BD242C TO-220AB 50 Units/Rail BD242CG TO-220AB (Pb-Free) 50 Units/Rail Stresses exceeding Maximum
ON Semiconductor
Original
BD241C-D BD241CG BD241C/D

BA241

Abstract: 30Vc amplifier and switching applications. BD241C * BD242B BD242C * *ON Semiconductor Preferred Device NPN , 500 mAdc VCEO(sus) = 80 Vdc (Min.) BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C VCE = 1.2 Vdc (Max , VCES VEB IC IB BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Collector­Emitter , 1 January, 2001 ­ Rev. 8 Publication Order Number: BA241C/D BD241C BD242B BD242C 40 PD , Cutoff Current (VCE = 60 Vdc, IB = 0) VCEO Vdc BD242B BD241C, BD242C 80 100 ICEO ICES 0.3 mAdc µAdc
ON Semiconductor
Original
BA241 30Vc ba241c

bd242 TRANSISTOR equivalent

Abstract: BD242A BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-emitter voltage (RBE = 100 ) BD242A BD242B VCER BD242B V -90 -45 VCEO BD242C -60 , ) UNIT -55 BD242C BD242A VALUE -65 to +150 °C TL 250 °C This value applies , BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Collector-emitter breakdown voltage BD242A IB = 0 (see Note 5) MAX -60 BD242B -80 BD242C
Power Innovations
Original

BD242A

Abstract: BD241 N AMER PHILIPS/DISCRETE 55E D â  bb53131 GGimGS â¡ â  BD242; BD242A BD242B; BD242C j I j , BD242; BD242A BD242B; BD242C / 1/j.^v.r iil S5E D ^53131 GOlTMOb S T-33-19 RATINGS Limiting , epitaxial base power transistors SSE D â  bbS3T31 QQITMO? 4 â  BD242; BD242A BD242B; BD242C Transition , Its Respective Manufacturer N AMER PHILIPS/DISCRETE BD242; BD242A BD242B; BD242C 'X 2SE D â , BD242B; BD242C T-33-19 0,1 ms 0,2 ms 10 -VrF(V) 10' Fig. 5 Safe Operating ARea; Tmb = 25 °C. I
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OCR Scan
thermal d242 198S 241B T0-220AB T-33-T9 S3T31

BD241C

Abstract: BD242C BD242C* . . . designed for use in general purpose amplifier and switching applications. · , 3.0 Adc Collector­Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C High , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD241C BD242C Unit Collector­Emitter , Publication Order Number: BD241C/D BD241C BD242C PD, POWER DISSIPATION (WATTS) 40 30 20 10 , 0) 1.0 IEBO Collector­Emitter Sustaining Voltage1 (IC = 30 mAdc, IB = 0) BD241C, BD242C
ON Semiconductor
Original
Abstract: BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http , (sus) = 100 Vdc (Min) BD241C, BD242C â'¢ High Current Gain â' Bandwidth Product fT = 3.0 MHz (Min , BD241C BD242C Unit Collectorâ'Emitter Voltage VCEO 80 100 Vdc Collectorâ'Emitter , /W BD242BG TOâ'220AB (Pbâ'Free) 50 Units/Rail BD242C TOâ'220AB 50 Units/Rail BD242CG TOâ'220AB (Pbâ'Free) 50 Units/Rail Stresses exceeding Maximum Ratings may damage the ON Semiconductor
Original

400 watts amplifier circuit diagram

Abstract: BD241C-D BD241C* (NPN), BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic , Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain - Bandwidth Product fT = , BD242C Collector-Emitter Voltage VCEO 80 100 Collector-Emitter Voltage VCES , _C/W BD242C TO-220AB 50 Units/Rail Thermal Resistance, Junction to Case RJC 3.125 , 1 Publication Order Number: BD241C/D BD241C* (NPN), BD242B (PNP), BD242C* (PNP) PD, POWER
ON Semiconductor
Original
400 watts amplifier circuit diagram BDXXX

bd242 TRANSISTOR equivalent

Abstract: BD242B BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD242B VCER -70 BD242C -115 -45 BD242A BD242B V CEO -60 V -80 -100 BD242C VEBO Continuous collector current Peak collector current (see , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C , 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 V VCE = -55 V
Bourns
Original

bipolar transistor td tr ts tf

Abstract: BD241C BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general , (sus) = 100 Vdc (Min.) BD241C, BD242C · High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit Collector­Emitter Voltage , Vdc, VEB = 0) mAdc 200 200 BD242B BD241C, BD242C ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD241C, BD242B, BD242C ICEO 0.3 mAdc 80 100 BD242B
Motorola
Original
bipolar transistor td tr ts tf
Abstract: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , -70 -90 -115 -45 -60 UNIT BD242B BD242C BD242 V Collector-em itter voltage (lc = -30 mA) BD242A BD242B BD242C V CEO -80 -100 V Em itter-base voltage Continuous collector current Peak , , BD242C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25 , V -90 V lo B =0 BD242A BD242B BD242C V V BE = 0 V BE = 0 V BE = 0 V BE = 0 lB = 0 -
OCR Scan

BD24x

Abstract: BD241CG BD242C BD242CG Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free , BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed , Adc · High Current Gain - Bandwidth Product VCEO(sus) = 100 Vdc (Min) BD241C, BD242C fT = 3.0 , Symbol VCEO VCES VEB IC BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage , ) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C BD242B BD241C, BD242C 80 100 ICEO 0.3 mAdc Collector
ON Semiconductor
Original
BD24x

ET 8211

Abstract: SCHEMA BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices , ·Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C ·High Current Gain - Bandwidth , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit , , Junction-to-Case RqJC 3.125 °C/W BD242BG TO-220AB (Pb-Free) 50 Units/Rail BD242C TO , BD241C, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) 0.3
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OCR Scan
ET 8211 SCHEMA LI 20 AB CB-117

D242

Abstract: d242b BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed , Adc · High Current Gain - Bandwidth Product VCEO(sus) = 100 Vdc (Min) BD241C, BD242C fT = 3.0 , Symbol VCEO VCES VEB IC BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage , BD242C BD242CG Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free , ) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C BD242B BD241C, BD242C 80 100 ICEO 0.3 mAdc Collector
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OCR Scan
D242 BD242- 92CS-20I6I
Showing first 20 results.