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BD139 circuits

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BD139

Abstract: BD140 BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Figure 1. Internal , BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 Package
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BD139-10 BD139-16 BD139 application BD140 application circuits circuits BD139 NPN transistor BD140 npn TRANSISTOR NPN BD140 of ic BD140 BD135-16/BD139-16 BD136-16/BD140-16 JESD97

bd139

Abstract: BD135 BD139 NPN SILICON TRANSISTORS â  STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The , ICM BD139 45 80 V 45 80 V V A 3 C o lle c to r P e a k C u rre n t 5 , e ra tin g J u n c tio n T e m p e ra tu re 1/4 BD135/BD139 THERMAL DATA R e s is ta n c e
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BD135/BD139 GCS4S90 BD135/

BD135 CURVES

Abstract: BD140 application circuits circuits BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Figure 1. Internal , BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140-16 Rev
STMicroelectronics
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BD135 CURVES TRANSISTOR NPN BD139 transistor BD135 BD139 time bd139 bd140 BD13910

8D139

Abstract: BDL39 circuits. The BD136, BD138 and BD140 are complementary to the BD135, BD137 and BD139 respectively. QUICK , BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n , 0034255 35ô ill BD135 BD137 BD139 yv. RATINGS Limiting values in accordance with the Absolute , . current gain ratio of matched pairs BD135/BD136; BD137/BD138; BD139/BD140 |ICl=150 mA;|VcEl = 2V BD135 BD137 BD139 max. 45 60 100 V max. 45 60 80 V max. 45 60 100 V max. 5 5 5 V max. 1,5 1,5 1,5 A max
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8D139 BDL39 bdxxx power transistor bd137 Transistor 80139 power transistor bd139

BD139

Abstract: BD139 NPN BD135 BD137/BD139 NPN SILICON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic , circuits. The complementary PNP types are the BD136 BD138 and BD140. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BD135 BD137 Uni t BD139 , W -65 to 150 o C 150 o C 1/4 BD135 / BD137 / BD139 THERMAL DATA R t hj-ca
STMicroelectronics
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BD139 NPN CIRCUIT DIAGRAM OF BD139 bd139 sot 32 BD139I B139 BD137 SGS BD137/BD139

BD135 BD139

Abstract: bd139 BD135 BD139 ® NPN SILICON TRANSISTORS T ype Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES 3 DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , complementary or quasi-complementary circuits. The complementary PNP types are BD136 and BD140 respectively , Value BD135 Uni t BD139 V CBO Collector-Base Voltage (IE = 0) 45 80 V V CEO
STMicroelectronics
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BD135 BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent bd139 data sheet BD139 transistor BD139 datasheet 0016114/B

BD139

Abstract: BD135 BD135 BD139 ® NPN SILICON TRANSISTORS Type Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , complementary or quasi-complementary circuits. The complementary PNP types are BD136 and BD140 respectively , Value BD135 Unit BD139 V CBO Collector-Base Voltage (I E = 0) 45 80 V V CEO
STMicroelectronics
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of bd139 BD139 p BD139 amplifier transistor BD140 BD139 NPN transistor download datasheet BD139 silicon transistors

BD139

Abstract: philips power transistor bd139 (max. 1.5 A) · Low voltage (max. 80 V). BD135; BD137; BD139 PINNING PIN 1 2 emitter collector , amplifiers and television circuits. 3 DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package , BD139 collector-emitter voltage BD135 BD137 BD139 peak collector current total powei dissipation DC , Absolute Maximum Rating System (IEC 134). BD135; BD137; BD139 SYMBOL VcBO PARAMETER collector-base voltage BD135 BD137 BD139 collector-emitter voltage BD135 BD137 BD139 emitter-base voltage
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BD137-10 BD137-16 philips power transistor bd139 BD139 philips BD135-BD137-BD139 transistor bd135-16

BD139

Abstract: bd140-10 BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features I Products are , amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Figure 1. Internal , BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140
STMicroelectronics
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BD136-BD138-BD140

Abstract: BD135-BD137-BD139 circuits. They are mounted in Jedec TO-126 plastic package. NPN complements are BD135-BD137-BD139 , Value BD135 BD137 BD139 BD135 BD137 BD139 BD135 BD137 BD139 Emitter-Base Voltage (IE= 0 , ) Collector-Emitter saturation Voltage (1) Min Typ Mx Unit Test Condition(s) BD135 BD137 BD139 BD135 BD137 BD139 IB=0 , -IC=30 mA BD135 BD137 BD139 -IC=0.5 A,-IB=50 mA -VCE=2 V, -IC=5 mA hFE DC
Comset Semiconductors
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BD136-BD138-BD140 BD135,BD137,BD139 BD139 N bd135 N rBE BD135 BD139 circuits

bd139

Abstract: BD137 Inchange Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power , APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION , ratings (Ta=25) SYMBOL VCBO PARAMETER Collector-base voltage BD135 BD137 BD139 HAN INC Collector-emitter voltage Open emitter BD137 Open base BD139 VEBO Emitter -base , Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless
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bd139 Complement bd139 140 BD13916 BD139.10 BD139.16 BD136/138/140 100MH

bd139

Abstract: BD135 SavantIC Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power , ·Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 , emitter 60 BD139 Collector-emitter voltage 45 BD137 Open base BD139 VEBO Emitter , Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors CHARACTERISTICS , -10;BD139-10 BD135-16;BD137-16;BD139-16 IC=150mA ; VCE=2V 63 63 100 hFE-3 DC current gain
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BD-135

BD139

Abstract: of bd139 BD135 BD139 ® NPN SILICON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic , circuits. The complementary PNP types are BD136 and BD140 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BD135 Uni t BD139 , o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R t hj-ca se Thermal Resistance
STMicroelectronics
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TBD139 st BD139 bd139 no bd135 diagram

BD139

Abstract: Transistor 80139 SGS -THOMSON BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits , Value Unit BD135 BD137 BD139 VcBO Collector-Base Voltage (lE = 0) 45 60 80 V VcEO , Respective Manufacturer T# SOT-32 INTERNAL SCHEMATIC DIAGRAM BD135 / BD 137/ BD139 THERMAL DATA
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B0139

BD139 PIN DIAGRAM

Abstract: BD135 PIN DIAGRAM BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic , complementary or quasi complementary circuits. Features · Pb-Free Packages are Available · DC Current Gain , BD135 BD137 BD139 VCEO 45 60 80 Vdc BD135 BD137 BD139 VCBO 45 60 100 Vdc , °C/W TO-225AA 500 Units/Box BD137G TO-225AA (Pb-Free) 500 Units/Box BD139 TO , . 1 BD135, BD137, BD139 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted
ON Semiconductor
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BD139 PIN DIAGRAM BD135 PIN DIAGRAM to225aa BD139G TRANSISTOR bd 330 pin diagram of bd139

BD139 N

Abstract: BD139 NPN BD135 ­ BD137 ­ BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD135-BD137-BD139 , circuits. They are mounted in Jedec TO-126 plastic package. PNP complements are BD136-BD138-BD140 , Value BD135 BD137 BD139 BD135 BD137 BD139 BD135 BD137 BD139 Emitter-Base Voltage (IE= 0 , BD137 ­ BD139 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings IE , cut-offcurrent Min Typ Mx Unit Test Condition(s) BD135 BD137 BD139 BD135 BD137 BD139 VCEO(SUS
Comset Semiconductors
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BD139 PIN DATA Power Transistors TO-126 Case bd135 to-126
Abstract: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current (max.1.5A) *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS PARAMETER , -126 standard mounting conditions. UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-007,A UTC BD139 , hFE DC current gain BD139-10 BD139-16 Collector-emitter saturation voltage Base-emitter voltage Unisonic Technologies
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BD139G

Abstract: BD139 PIN DIAGRAM BD135, BD137, BD139 Plastic Medium-Power Silicon NPN Transistors This series of plastic , complementary or quasi complementary circuits. http://onsemi.com Features â'¢ High DC Current Gain â'¢ BD , BD137 BD139 VCEO Collectorâ'Base Voltage BD135 BD137 BD139 VCBO Emitterâ'Base Voltage , Number: BD135/D BD135, BD137, BD139 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , BD139 Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125_C) IEBO
ON Semiconductor
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BD139 application

Abstract: BD139 NPN transistor UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current (max.1.5A) *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 , BD139-10 BD139-16 Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE , UNISONIC TECHNOLOGIES CO. LTD 1 QW-R213-010,A UTC BD139 160 hFE 120 NPN EPITAXIAL SILICON , ) 103 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R213-010,A UTC BD139 NPN EPITAXIAL SILICON
Unisonic Technologies
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hFE-120 npn

BDXXX

Abstract: BDxxx-10 BD135 BD137 BD139 , , recommended for driver stages in hi-fi amplifiers and television circuits. The 6D136, BD138 and BD140are complementary to the BD135, BD137 and BD139 respectively. Q U IC K R E F E R E N C E D A T A BD135 Collector-base voltage (open emitter) BD137 45 60 BD139 VCBO max. Collector-emitter voltage , . â'" I I bbSB 'm 0034555 35fl June 1988 BD135 BD137 BD139 R A T IN G S Limiting
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BDxxx-10 003M257 53T31 DD3H25 34EST 00342L0 S3T31
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