NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: VEB=-5V; IC=0 hFE-1 DC current gain IC=-5mA ; VCE=-2V 40 hFE-2 DC current gain BD136-10;BD138-10 BD138-10;BD140-10 BD140-10 BD136-16;BD138-16 BD138-16;BD140-16 BD140-16 IC=-150mA ; VCE=-2V 63 63 100 hFE-3 DC current , SavantIC Semiconductor Product Specification BD136 BD138 BD138 BD140 BD140 Silicon PNP Power , ) SYMBOL PARAMETER CONDITIONS BD136 VCBO Collector-base voltage BD138 BD138 VALUE -45 Open , Emitter -base voltage IC V -100 BD136 VCEO UNIT -60 V -100 Open collector -5 ... | Original |
3 pages, |
datasheet of ic BD140 BD138-10 BD138-16 BD136-16 BD140 application circuits circuits BD136-10 bd140 Complement BD140-10 BD140-16 BD138 bd138 hfe BD136 BD140 circuits BD135/137/139 BD135/137/139 abstract |
| Abstract: BD136/138/140 BD136/BD138/BD140 TRANSISTOR (PNP) TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25) 1. EMITTER Collector current ICM: -1.5 A Operating and storage junction , (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN BD136 V(BR , Ic=-100uA, IE=0 -60 BD140 BD140 Collector-emitter breakdown voltage BD138 BD138 BD136 V(BR)CBO MAX , current IEBO VEB=-5V, IC=0 -10 uA hFE(1) VCE=-2V, IC=-5Ma BD136 DC current gain ... | Original |
1 pages, |
BD138 10 BD138 bd136 equivalent datasheet of transistor BD140 power transistor bd136 transistor BD138 bd138 hfe BD136 transistor bd136 bd140 equivalent BD140 bd140 equivalent transistor transistor BD140 BD136/138/140 BD136/BD138/BD140 BD136/138/140 abstract |
| Abstract: BD136 BD138/BD140 BD138/BD140 ® PNP SILICON TRANSISTORS Type Marking BD136 BD136-10 BD136 BD136-10 BD136-16 BD136-16 BD138 BD138 BD140 BD140 BD138 BD138 BD140 BD140 BD140-10 BD140-10 BD140-10 BD140-10 BD140-16 BD140-16 BD140-16 BD140-16 3 s s STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136 , 2001 BD136 -45 -45 Value BD138 BD138 -60 -60 -5 -1.5 -3 -0.5 12.5 1.25 -65 to 150 150 Unit BD140 BD140 -80 -80 V V V A A A W W o C o C 1/4 BD136 / BD138 BD138 / BD140 BD140 THERMAL ... | Original |
4 pages, |
BD136 datasheet BD140-10 BD140-16 CIRCUIT DIAGRAM OF BD135 datasheet of transistor BD140 BD136 diagrams st BD140 BD140 circuits bd140 equivalent BD136-16 BD140 application circuits circuits bd140 equivalent transistor of transistor BD140 BD136 BD138/BD140 BD136 abstract |
| Abstract: BD136 BD138/BD140 BD138/BD140 ® PNP SILICON TRANSISTORS Type Marking BD136 BD136 BD136-10 BD136-10 BD136-16 BD136-16 BD138 BD138 BD138 BD138 BD140 BD140 BD140 BD140 BD140-10 BD140-10 BD140-10 BD140-10 BD140-16 BD140-16 BD140-16 BD140-16 3 s s STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136 , 2001 BD136 -45 -45 Value BD138 BD138 -60 -60 -5 -1.5 -3 -0.5 12.5 1.25 -65 to 150 150 Uni t BD140 BD140 -80 -80 V V V A A A W W o C o C 1/4 BD136 / BD138 BD138 / BD140 BD140 THERMAL ... | Original |
4 pages, |
BD135 of BD140 BD140-16 BD140-10 BD136 BD136-10 BD136-16 BD138 BD137 BD140 of transistor BD140 BD140 circuits BD140 npn BD138/BD140 BD136 abstract |
| Abstract: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio , MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT Collector-Base Voltage BD136 BD138 BD138 BD140 BD140 VCBO -45 -60 -80 V Collector-Emitter Voltage BD136 BD138 BD138 BD140 BD140 Emitter-Base Voltage , QW-R204-013 QW-R204-013,A UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS(Tc=25°C ... | Original |
2 pages, |
013 transistor BD140 BD139 BD138 BD140-10 transistor bd136 transistor bd138 transistor PNP 5 w BD139 circuits BD136 BD140 circuits BD140 npn TRANSISTOR PNP BD140 BD140 pnp transistor BD136/138/140 BD136/138/140 abstract |
| Abstract: BD135 BD135 BD135-16 BD135-16 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139 BD139 BD139-10 BD139-10 , = -150 mA, VCE = -2 V BD140-10 BD140-10 63 BD136-16/BD140-16 100 160 250 Collector cut-off , BD135 BD135 - BD136 BD139 BD139 - BD140 BD140 Complementary low voltage transistor Features Products are , and BD139 BD139, and the complementary PNP types are the BD136 and BD140 BD140. Figure 1. Internal , Packaging SOT-32 Tube BD140-16 BD140-16 1/9 9 BD135 BD135 - BD136 - BD139 BD139 - BD140 BD140 1 Electrical ratings ... | Original |
5 pages, |
BD13516 transistor BD140 BD135-16 BD136-16 BD140 circuits of bd139 transistor bd135-16 BD140-16 BD140 npn BD140 pnp transistor BD136 BD139 TRANSISTOR BD140 BD139 BD135 BD136 BD135 abstract |
| Abstract: 25 40 160 25 BD136-10 BD138-10 BD138-10 BD140-10 BD140-10 MIN MAX 63 160 BD136-16 BD138-16 BD138-16 BD140-16 BD140-16 , 80 BD136-6 BD138-6 BD138-6 BD140-6 BD140-6 MIN MAX 40 100 UNIT V V V A A A W W °C °C/W °C/W , DATA SHEET BD136 BD138 BD138 BD140 BD140 PNP SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD136, BD138 BD138, and BD140 BD140 types are PNP Silicon Epitaxial Planar Transistors designed , Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD BD136 ... | Original |
2 pages, |
BD138-10 BD138 BD140-10 BD140-6 BD136-BD138-BD140 BD136-6 BD136-16 transistor BD138 BD136-10 TRANSISTOR PNP BD140 bd140 data sheet BD136 BD140 bd140 equivalent BD136 abstract |
| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/BD138/BD140 TRANSISTOR (PNP) TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25 , Symbol unless otherwise specified) Test conditions MIN BD136 -45 BD138 BD138 Ic=-30mA, IB=0 -60 UNIT -80 BD140 BD140 V(BR)CEO -60 BD136 Collector-emitter breakdown voltage , , IC=-5Ma Emitter-base breakdown voltage -5 BD136 DC current gain hFE(2) VCE=-2V, IC=-150mA ... | Original |
1 pages, |
transistors bd136 transistor bd136 datasheet of transistor BD140 BD140 Transistor bd140 equivalent BD140 BD138 BD136 BD136/BD138/BD140 BD136/BD138/BD140 abstract |
| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136 , Parameter Value BD136 VCBO -45 BD138 BD138 Collector-Base Voltage -60 BD140 BD140 -45 BD138 BD138 -60 BD140 BD140 VCEO V -80 BD136 Collector-Emitter Voltage Unit -80 -5 V IC , conditions Min Typ Max IC= -0.1mA,IE=0 BD136 -45 BD138 BD138 -60 BD140 BD140 Collector-emitter sustaining voltage V -80 VCEO(SUS)* IC=-0.03A,IB=0 BD136 -45 BD138 BD138 -60 ... | Original |
1 pages, |
transistor BD138 BD136 BD137 BD138 bd138 hfe BD139 BD140 bd140 equivalent datasheet of transistor BD140 of transistor BD140 transistor bd136 BD135 bd139 140 power transistor bd136 BD136/138/140 BD136/138/140 abstract |
| Abstract: 160 TYP BD136-10 BD138-10 BD138-10 BD140-10 BD140-10 MIN MAX 63 160 TEST CONDITIONS VCE=2.0V, IC=150mA , 0.5 1.0 40 63 250 25 160 TYP UNIT nA uA nA V V V MHz BD136-16 BD138-16 BD138-16 BD140-16 BD140-16 , DATA SHEET BD136 BD138 BD138 BD140 BD140 PNP SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD136, BD138 BD138, and BD140 BD140 types are PNP Silicon Epitaxial Planar Transistors designed , VEBO IC ICM IB IBM PD PD BD136 45 45 TJ,Tstg J-mb JA BD138 BD138 60 60 5.0 1.5 2.0 ... | Original |
2 pages, |
BD140 BD138-16 BD138 BD136-BD138-BD140 BD140-10 BD140-16 BD136-16 transistor bd136 BD136-10 BD138-10 transistor BD140 datasheet of transistor BD140 transistor BD138 BD136 BD136 BD138 BD136 abstract |
| Abstract: ;f= 100 MHz) *T >75 >75 >75 MHz 384 1 761 G-06 ESC D â- fl235b05 0004331 7 MSIZ6 , y^r D BD136 , >; fla, = parameter w BD136, BD138 BD138, BD140 BD140 K Permissible pulsa load JL fthjc = ' (0: v = parameter W BD136, BD138 BD138, BD140 BD140 W'r 150°C UT6 tt"5 IO"4 V3 f»2 KJ-'s Permissible operating range , /c = MVce);Cc«. = 60»C);V = 0 A BD136, BD138 BD138, BD140 BD140 Collector currant le = f (Vee) VC6 = 2 V; r,mb = parameter , ) Vce = 2 V; Tamb = parameter BD136-10, BD 138-10, BD140-10 BD140-10 Collector cutoff current versus ... | OCR Scan |
5 pages, |
BD136 BD138 BD13S BD140 BD140 N D107-P D109 transistor bd 126 transistor 136 138 140 TRANSISTOR BD 136 B0138 BD 139 140 BD 140 transistor transistor bd 138 datasheet abstract |
| Abstract: Inchange Semiconductor Product Specification BD136 BD138 BD138 BD140 BD140 Silicon PNP Power , ratings (Ta=25) SYMBOL VCBO PARAMETER Collector-base voltage BD136 BD138 BD138 BD140 BD140 HAN , voltage OND EMIC GE S BD136 VCEO TOR UC CONDITIONS Open collector VALUE , Semiconductor Product Specification BD136 BD138 BD138 BD140 BD140 Silicon PNP Power Transistors CHARACTERISTICS , ; IC=0 hFE-1 DC current gain IC=-5mA ; VCE=-2V 40 hFE-2 DC current gain BD136 ... | Original |
3 pages, |
BD136-10 bd136 equivalent BD140-10 base-10 data sheet of bd140 bd138 equivalent BD138-10 datasheet of ic BD140 BD136-16 bd138 hfe BD136 BD136 pin description BD140-16 BD135/137/139 BD135/137/139 abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| * BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR *- * MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS * Based on BD140-16 BD140-16 BD140-16 BD140-16 * BVcbo: BD135 BD135 BD135 BD135 -45V / BD137 BD137 BD137 BD137 -60V / BD139 BD139 BD139 BD139 -80V * BVceo: BD135 BD135 BD135 BD135 -45V / BD137 BD137 BD137 BD137 -60V / BD139 BD139 BD139 BD139 -80V * BVebo: -5V * Complement to BD135 BD135 BD135 BD135, BD137 BD137 BD137 BD137 and BD139 BD139 BD139 BD139 respectively *- .MODEL BD136_138_140 PNP ( + IS =2.9537E-13 9537E-13 9537E-13 9537E-13 + BF =201.4 + NF =1.0 + BR =23.765 + NR =1 www.datasheetarchive.com/files/fairchild/pdfs/models actual/bd136_138_140.mod |
Fairchild | 22/08/2003 | 1.04 Kb | MOD | bd136_138_140.mod |
| * BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR *- * MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS * Based on BD140-16 BD140-16 BD140-16 BD140-16 * BVcbo: BD135 BD135 BD135 BD135 -45V / BD137 BD137 BD137 BD137 -60V / BD139 BD139 BD139 BD139 -80V * BVceo: BD135 BD135 BD135 BD135 -45V / BD137 BD137 BD137 BD137 -60V / BD139 BD139 BD139 BD139 -80V * BVebo: -5V * Complement to BD135 BD135 BD135 BD135, BD137 BD137 BD137 BD137 and BD139 BD139 BD139 BD139 respectively *- .MODEL BD136_138_140 PNP ( + IS =2.9537E-13 9537E-13 9537E-13 9537E-13 + BF =201.4 + NF =1.0 + BR =23.765 + NR =1 www.datasheetarchive.com/files/fairchild/pdfs/models/bd136_138_140.txt |
Fairchild | 22/08/2003 | 1.04 Kb | TXT | bd136_138_140.txt |
| element component template bd136 c b e #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE * # Contains Proprietary Information * # Which is The Property of * # SYMMETRY OR ITS LICENSORS * # Modeling services provided by * # Interface Technologies www.i-t.com * #* # MODPEX model for BJT transistor bd136 # Model generated on Feb 22, 2004 electrical c,b,e { # BODY www.datasheetarchive.com/files/on_semiconductor/simulation-models/bd136.sin |
On Semiconductor | 30/03/2009 | 1.04 Kb | SIN | bd136.sin |
| * BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR *- * MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS * Based on BD140-16 BD140-16 BD140-16 BD140-16 * BVcbo: BD135 BD135 BD135 BD135 -45V / BD137 BD137 BD137 BD137 -60V / BD139 BD139 BD139 BD139 -80V * BVceo: BD135 BD135 BD135 BD135 -45V / BD137 BD137 BD137 BD137 -60V / BD139 BD139 BD139 BD139 -80V * BVebo: -5V * Complement to BD135 BD135 BD135 BD135, BD137 BD137 BD137 BD137 and BD139 BD139 BD139 BD139 respectively *- .MODEL BD136_138_140 PNP ( + IS =2.9537E-13 9537E-13 9537E-13 9537E-13 + BF =201.4 + NF =1.0 + BR =23.765 + NR =1 www.datasheetarchive.com/files/fairchild/simulation-models/bd136_138_140.lib |
Fairchild | 22/10/2012 | 1.07 Kb | LIB | bd136_138_140.lib |
| ST | PNP SILICON TRANSISTOR BD136 BD138 BD138 BD138 BD138 BD140 BD140 BD140 BD140 PNP SILICON TRANSISTOR Document available in the following formats: Portable Document Format and Raw Text Format BD136 BD138 BD138 BD138 BD138 The BD136, BD138 BD138 BD138 BD138 and BD140 BD140 BD140 BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic June 1997 3 2 1 SOT-32 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BD136 BD138 BD138 BD138 BD138 BD140 BD140 BD140 BD140 V CBO (sus) * Collector-Emitter Sustaining Voltage I C = -30 mA for BD136 for BD138 BD138 BD138 BD138 for BD140 BD140 BD140 BD140 -45 -60 -80 V V V V CE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4186-v2.htm |
STMicroelectronics | 14/06/1999 | 4.3 Kb | HTM | 4186-v2.htm |
| ST | PNP SILICON TRANSISTOR BD136 BD138 BD138 BD138 BD138 BD140 BD140 BD140 BD140 PNP SILICON TRANSISTOR Document available in the following formats: Portable Document Format and Raw Text Format BD136 BD138 BD138 BD138 BD138 The BD136, BD138 BD138 BD138 BD138 and BD140 BD140 BD140 BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic June 1997 3 2 1 SOT-32 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BD136 BD138 BD138 BD138 BD138 BD140 BD140 BD140 BD140 V CBO (sus) * Collector-Emitter Sustaining Voltage I C = -30 mA for BD136 for BD138 BD138 BD138 BD138 for BD140 BD140 BD140 BD140 -45 -60 -80 V V V V CE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4186-v1.htm |
STMicroelectronics | 02/04/1999 | 4.34 Kb | HTM | 4186-v1.htm |
| SILICON TRANSISTOR BD136 BD138 BD138 BD138 BD138 BD140 BD140 BD140 BD140 Document Format Size Document 24/10/1997 4 Raw Text Format BD136 BD138/BD140 BD138/BD140 BD138/BD140 BD138/BD140 PNP The BD136, BD138 BD138 BD138 BD138 and BD140 BD140 BD140 BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 DIAGRAM June 1997 3 2 1 SOT-32 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BD136 BD138 BD138 BD138 BD138 A V CEO(sus) * Collector-Emitter Sustaining Voltage I C = -30 mA for BD136 for BD138 BD138 BD138 BD138 for www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4186.htm |
STMicroelectronics | 20/10/2000 | 6.4 Kb | HTM | 4186.htm |
| PNP SILICON TRANSISTOR BD136 BD138 BD138 BD138 BD138 BD140 BD140 BD140 BD140 Document Format Size 4186 24/10/1997 4 Raw Text Format BD136 DESCRIPTION The BD136, BD138 BD138 BD138 BD138 and BD140 BD140 BD140 BD140 are SOT-32 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BD136 BD138 BD138 BD138 BD138 BD140 BD140 BD140 BD140 V CBO (sus) * Collector-Emitter Sustaining Voltage I C = -30 mA for BD136 for BD138 BD138 BD138 BD138 for BD140 BD140 BD140 BD140 -45 -60 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4186-v3.htm |
STMicroelectronics | 25/05/2000 | 6.12 Kb | HTM | 4186-v3.htm |
| No abstract text available www.datasheetarchive.com/download/30066973-677476ZC/bd136.jpg |
User Photos | 23/05/2012 | 6.57 Kb | JPG | bd136.jpg |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL bd136 pnp +IS=1e-09 BF=681.414 NF=0.85 VAF=10 +IKF=0.196957 ISE=1e-08 NE=1.57381 BR=56.5761 +NR www.datasheetarchive.com/files/on_semiconductor/simulation-models/bd136.sp3 |
On Semiconductor | 30/03/2009 | 0.88 Kb | SP3 | bd136.sp3 |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| BD136 | N/A | Medium Power, General Purpose | ||
| BD136-10 | N/A | Medium Power, General Purpose | ||
| BD136-16 | N/A | Medium Power, General Purpose | ||
| BD136-25 | N/A | Si PNP Power BJT | ||
| BD136-6 | N/A | Medium Power, General Purpose | ||
| BD136(-6...-16) | N/A | Silicon PNP | ||
| BD136G | N/A | Medium Power, General Purpose |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| BD136 | BD13610S Buy | 2N4918 Buy | Advanced Semiconductor Inc | Close | PowerBJT | PNP Epitaxial Silicon Transistor |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| BCX51 Buy | BD136 Buy | NXP Semiconductor | Single Transistors IC 500 mA | |
| BCX51 Buy | BD13610 Buy | Fairchild Semiconductor | Single Transistors IC 500 mA | |
| BCX51 Buy | BD136G Buy | On Semiconductor | Single Transistors IC 500 mA |
| NTE Electronics Part | Industry Part |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| BD136 Buy | BD136.10 Buy | Various | Direct |
| BD136 Buy | BD136.16 Buy | Various | Direct |
| BD136 Buy | BD136.6 Buy | Various | Direct |
| BD136 Buy | BD227 Buy | Various | Direct |
| BD136 Buy | BDW56 Buy | Various | Direct |
| BD136G Buy | 2N4918 Buy | Advanced Semiconductor | Close |
| BD136G Buy | 2SA1096 Buy | Panasonic | Close |
| BD136G Buy | 2SA1096Q Buy | Panasonic | Close |
| BD136G Buy | 2SA1096R Buy | Panasonic | Close |
| BD136G Buy | 2SA715WT Buy | Hitachi Semiconductor | Close |
| STMicroelectronics Part | Industry Part | Manufacturer | Type | Description |
| BD136 Buy | BD132 Buy | - | Nearest Preferred | Power Bipolar |
| BD136 Buy | BD136-6 Buy | - | Nearest Preferred | Power Bipolar |
| BD140-10 Buy | BD136-10 Buy | STMicroelectronics | Nearest Preferred | LOW VOLTAGE (less than 160V) COMMODITIES |
| BD140-10 Buy | BD136-16 Buy | STMicroelectronics | Nearest Preferred | LOW VOLTAGE (less than 160V) COMMODITIES |
| Part | Similar Part | Notes |
| BD136 Buy | 2N4900 Buy | |
| BD136 Buy | 2N4920 Buy | |
| BD136 Buy | 2N5195 Buy | |
| BD136 Buy | 2N5415 Buy | |
| BD136 Buy | 2SA1195 Buy | |
| BD136 Buy | 2SA1356 Buy | |
| BD136 Buy | 2SA698 Buy | |
| BD136 Buy | 2SA699 Buy | |
| BD136 Buy | 2SA743A Buy | |
| BD136 Buy | 2SA887 Buy |