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BCW66HTA Diodes Incorporated Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, SOT-23, 3 PIN visit Digikey Buy

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BCW66H Datasheet

Part Manufacturer Description PDF Type
BCW66H Diodes 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Original
BCW66H Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BCW66H Infineon Technologies NPN Silicon AF Transistor Original
BCW66H Infineon Technologies SOT23 package Original
BCW66H Micro Commercial Components NPN Small Signal Transistor 330mW Original
BCW66H Siemens NPN Silicon AF Transistors (For general AF applications High current gain) Original
BCW66H STMicroelectronics SMALL SIGNAL NPN TRANSISTORS Original
BCW66H Zetex Semiconductors SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Original
BCW66H Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BCW66H Continental Device India General Purpose Transistor Scan
BCW66H Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan
BCW66H Ferranti Semiconductors Quick Reference Guide 1985 Scan
BCW66H Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan
BCW66H International Rectifier HEXFET Power MOSFET Scan
BCW66H Motorola Small-signal NPN transistor. Scan
BCW66H N/A Transistor Shortform Datasheet & Cross References Scan
BCW66H N/A Shortform Transistor PDF Datasheet Scan
BCW66H N/A Shortform Transistor PDF Datasheet Scan
BCW66H N/A Diode, Transistor, Thyristor Datasheets and more Scan
BCW66H N/A Shortform Transistor Datasheet Guide Scan
Showing first 20 results.

BCW66H

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number BCW66HTA BCW66HQTA , A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 , our website at http://www.diodes.com/products/packages.html. Marking Information EH BCW66H , 2013 © Diodes Incorporated A Product Line of Diodes Incorporated BCW66H Maximum Ratings , 100 1k Pulse Width (s) Pulse Power Dissipation BCW66H Document number: DS33003 Rev. 5 - 2 Diodes
Original
BCW68H J-STD-020 AEC-Q101 MIL-STD-202 2002/95/EC 2011/65/EU

bcw66h

Abstract: BCW66F . BCW66H BCW66F . BCW66H NPN Surface Mount General Purpose Si-Epi-Planar Transistors , VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25°C) BCW66F . BCW66H 45 V 75 V 5V 250 mW 1) 800 mA , ­ ­ ­ ­ ­ 250 400 630 ­ ­ ­ BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 50 80 75 100 180 100 160 250 ­ ­ ­ , , Schaltverhältnis 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW66F . BCW66H Characteristics
Diotec
Original
UL94V-0 BCW68F

BCW66F

Abstract: BCW66G BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW66F . BCW66H Collector-Emitter-volt. ­ , 100 µA 35 50 80 ­ ­ ­ ­ ­ ­ BCW66F BCW66G BCW66H hFE hFE hFE 75 100 180 ­ ­ ­ ­ ­ ­ VCE = 1 V, IC = 100 mA BCW66F BCW66G BCW66H hFE hFE hFE 100 160 , = 10 mA 1 BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE ­ ­ ­ 35
Diotec
Original
Abstract: Marking: BCW66F:EF; BCW66G:EG; â"ƒ BCW66H:EH ELECTRICAL CHARACTERISTICS (Ta=25â"ƒ unless , voltage VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H VCE=1V, IC= 10mA BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE1 hFE2 DC current gain * VCE=1V, IC Jiangsu Changjiang Electronics Technology
Original
BCW66F/66G/66H BCW68 100MH

30255

Abstract: qSOT-23 -freq u en cy d river s ta g e an d switching applications. t =i B Device BCW66F BCW66G BCW66H cr , Vdc, lc = 0, TA = 150°C VE B = 4.0 Vdc, lc = 0 lc = 100 ixAdc, VC E = 1.0 Vdc BCW66F BCW66G BCW66H : BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H Min 45 5.0 75 - - - 35 50 80 75 110
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OCR Scan
30255 qSOT-23

BCW66F/66G/66H

Abstract: VCE=1V, IC= 10mA BCW66F BCW66G BCW66H VCE=1V, IC= 100mA BCW66F BCW66G BCW66H VCE=2V, IC= 500mA BCW66F BCW66G BCW66H µA 0.02 µA 35 50 80 75 110 180 100 160 250 35 60 , VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H 0.02 2 V fT VCE= 10V, IC=20mA, f , =2Kâ"¦ 10 dB Transition frequency Marking BCW66F:EF ; BCW66G:EG; BCW66H:EH 100 MHz
Jiangsu Changjiang Electronics Technology
Original

bcw66fr

Abstract: Not Recommended for New Design Please Use BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS ­ BCW66F ­ EF BCW66G ­ EG BCW66H ­ EH BCW66FR ­ BCW66GR ­ BCW66HR ­ 7P 5T 7M BCW66 E C B COMPLEMENTARY TYPE ­ BCW68 SOT23 ABSOLUTE MAXIMUM , 330 -55 to +150 UNIT V V V mA mA mA mW °C TBA Not Recommended for New Design Please Use BCW66H , BCW66G h FE 250 400 BCW66H h FE 350 630 Transition Frequency Output Capacitance Input
Diodes
Original

BCW66H

Abstract: marking eh sot23 BCW66F EF BCW66G EG BCW66H EH â'¢ Designed for low-frequency driver stage and switching applications , '" â'" â'" BCW66H 80 â'" â'" lc = 10 mAdc, VCE = 1.0 Vdc : BCW66F BCW66G 75 110 â'" â'" BCW66H 180 â'" â'" lc = 100 mAdc, VCE = 1.0 Vdc BCW66F BCW66G 100 160 â'" 250 400 BCW66H 250 â'" 630 lc = 500 mAdc, VCE = 2.0 Vdc BCW66F BCW66G 35 60 â'" â'" BCW66H 100 â'" â'" VcE(sat) lc =
-
OCR Scan
marking eh sot23 SAL1

003A MARKING TRANSISTOR

Abstract: BCW66F Marking BCW66F EF BCW66G EG BCW66H EH â'¢ Designed for low-frequency driver stage and switching , 35 â'" â'" â'" BCW66G 50 â'" â'" BCW66H 80 â'" â'" Ir. = 10 mAdc, VCE = 1.0 Vdc : BCW66F 75 â'" â'" BCW66G 110 â'" â'" BCW66H 180 â'" â'" "c = 100 mAdc, VCE = 1.0 Vdc BCW66F 100 â'" 250 BCW66G 160 â'" 400 BCW66H 250 â'" 630 lo = 500 mAdc, VCE = 2.0 Vdc BCW66F 35 â'" â'" BCW66G 60 â'" â'" BCW66H 100 â'" â'" VcE(sat) lo = 500 mAdc, lB = 50 mAdc â'" 0.7 â
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OCR Scan
003A MARKING TRANSISTOR

bcw66

Abstract: BCW65CR PART OBSOLETE - USE BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1995 PARTMARKING DETAILS BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P , 3 - 27 PART OBSOLETE - USE BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25 , BCW65C hFE BCW66H 350 630 Transition Frequency Collector-Base Capacitance Emitter-Base
Diodes
Original
Abstract: BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H DC Current Gain* BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H Parameter BVCBO BVCEO BVEBO ICBO IEBO 75 45 5 35 50 80 75 110 180 100 160 , Bauelemente CLASSIFICATION OF hFE(3) Part Number Rank Range Marking BCW66F BCW66G BCW66H F SeCoS
Original

BCW66H

Abstract: BCW65 ec BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M Not Recommended for New Design Please Use BCW66H BCW65 BCW66 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER , Recommended for New Design Please Use BCW66H ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise , BCW65B hFE BCW66G 250 400 BCW65C hFE BCW66H 350 630 Transition Frequency Collector-Base
Diodes
Original
BCW65 ec
Abstract: =1.0V, IC=100mA VCE=2.0V, IC=500mA BCW66F: BCW66G: BCW66H BCW66 75 45 EF EG EH 5.0 800 , V V V V V V MHz pF pF BCW65C BCW66H MIN MAX 80 180 250 630 100 R0 ( 30 , : BCW65A: EA BCW65B: EB BCW65C: EC BCW66F: EF BCW66G: EG BCW66H EH R0 ( 30-November 2001 Central Semiconductor
Original

BCW65AR

Abstract: BCW65BR 0.7 V BCW65A hFE BCW66F 35 75 100 35 50 110 160 60 BCW65C hFE BCW66H 80 180 250 , EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M 8 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL , 0.7 V BCW65A hFE BCW66F 35 75 100 35 50 110 160 60 BCW65C hFE BCW66H 80 180 250 , EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR
Zetex Semiconductors
Original

BCW65A

Abstract: BCW66F BCW68F BCW66G 75 45 1000 350 160/400 100/1 0.3 100/10 100 10 BCW68G BCW66H 75 45 1000 350 250/630 100/1 , BCW68H 60 45 1000 350 250/630 100/1 0.3 100/10 100 10 BCW66H FMMTA55 60 60 500 350 50/- 10/1 0.25 100/10
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OCR Scan
FMMTA06 FMMTA56 FMMTA05 100az BCW67A BCW67B BCW67C

marking eh

Abstract: MCC Features omponents 20736 Marilla Street Chatsworth !"# $ % !"# BCW66H NPN Small Signal Transistor 330mW SOT-23 A D l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Marking: EH l Weight: 0.008 grams , Revision: 2 2003/04/30 BCW66H Electrical Characteristics Parameter DC Current Gain(1) at VCE = 10V
Micro Commercial Components
Original
marking eh

BCW66H

Abstract: BCW66F 23033=14 0ÃQ07b5 Ã"71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH Pin configuration 1 = base 2= emitter 3 = collector 2.6 2.4 0.60 0.40 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 3 _L02 0.89" _2.00_ 1.80 0.14 0.09 § R0.1 (004)- 0.12 0.02 I fvRQ.05 " (.002) J.15_ 0.90 _L 0.70 0.50 "1 , Manufacturer QDIIL BCW66F, BCW66G BCW66H RATINGS (at Ta = 25°C unless otherwise specified) Limiting values
-
OCR Scan
E3833C1M
Abstract: pF BCW65C BCW66H MIN MAX 80 180 250 630 100 R2 (20-November 2009) BCW65 SERIES BCW66 , BCW66F EF BCW66G EG BCW66H EH R2 (20-November 2009) w w w. c e n t r a l s e m i . c o -
Original

BCW65A

Abstract: BCW65B BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING I DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - EC BCW65CR - f 5V BCW65C - I ( 1995 6V 7P BCW65A - 4V BCW66F - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M COMPLEMENTARY TYPES BCW65 - BCW66 - - , Current Transfer BCW65A hFE BCW66F BCW65B h~~ BCW66G 50 110 160 60 mBCW65C hFE BCW66H
Zetex Semiconductors
Original
DSA003673

BCW66

Abstract: BCW65 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1995_ BCW65 BCW66 PARTMARKING DETAILS -BCW65A- EA BCW65B- EB BCW65C- EC BCW66F- EF BCW66G- EG BCW66H- EH COMPLEMENTARY TYPES -BCW65 - BCW67 BCW66 - BCW68 BCW65AR - 4V BCW65BR - 5V BCW65CR - 6V BCW66FR - 7P BCW66GR - 5T BCW66HR- 7M ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage Vcbo 60 75 V , 250 400 I^IOOuA, VCE=10V 1,;= 10mA, VCE= IV I^IOOmA, VÅ' = IV* l^öOOmA, VCE = 2V* BCW65C BCW66H hfe
-
OCR Scan
TT7057A

Q62702-C1632

Abstract: C1892 Marking: BCW66F:EF; BCW66G:EG; â"ƒ BCW66H:EH ELECTRICAL CHARACTERISTICS (Ta=25â"ƒ unless , voltage VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H VCE=1V, IC= 10mA BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE1 hFE2 DC current gain * VCE=1V, IC
Siemens
Original
Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632 C1892

65 b S

Abstract: SOT-23 marking AFE Not Recommended for New Design Please Use BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS ­ BCW66F ­ EF BCW66G ­ EG BCW66H ­ EH BCW66FR ­ BCW66GR ­ BCW66HR ­ 7P 5T 7M BCW66 E C B COMPLEMENTARY TYPE ­ BCW68 SOT23 ABSOLUTE MAXIMUM , 330 -55 to +150 UNIT V V V mA mA mA mW °C TBA Not Recommended for New Design Please Use BCW66H , BCW66G h FE 250 400 BCW66H h FE 350 630 Transition Frequency Output Capacitance Input
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OCR Scan
65 b S SOT-23 marking AFE

BCW66

Abstract: BCW66F EF BCW66G EG BCW66H EH â'¢ Designed for low-frequency driver stage and switching applications , '" â'" â'" BCW66H 80 â'" â'" lc = 10 mAdc, VCE = 1.0 Vdc : BCW66F BCW66G 75 110 â'" â'" BCW66H 180 â'" â'" lc = 100 mAdc, VCE = 1.0 Vdc BCW66F BCW66G 100 160 â'" 250 400 BCW66H 250 â'" 630 lc = 500 mAdc, VCE = 2.0 Vdc BCW66F BCW66G 35 60 â'" â'" BCW66H 100 â'" â'" VcE(sat) lc =
-
OCR Scan
EHP00590 EHP00

marking code E3t

Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR Nâ'"Pâ'"N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collectorâ'"base , Ptot 60 100 35 V V V mA mW Page 1 of 3 BCW66F, BCW66G BCW66H RATINGS (at T A
-
OCR Scan
marking code E3t HP00396
Abstract: =1.0V, IC=100mA VCE=2.0V, IC=500mA BCW66F: BCW66G: BCW66H BCW66 75 45 EF EG EH 5.0 800 , V V V V V V MHz pF pF BCW65C BCW66H MIN MAX 80 180 250 630 100 R0 ( 30 , : BCW65A: EA BCW65B: EB BCW65C: EC BCW66F: EF BCW66G: EG BCW66H EH R0 ( 30-November 2001 Continental Device India
Original
C-120
Showing first 20 results.