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Part : BCR169SH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0269 Price Each : $0.0306
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BCR169S Datasheet

Part Manufacturer Description PDF Type
BCR169S Infineon Technologies PNP Silicon Digital Transistor Array Original
BCR169S Infineon Technologies SOT363 package Original
BCR169S Infineon Technologies Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: PNP; R<sub>1</sub> (typ): 4.7 kOhm; R<sub>2</sub>: 0.0 k?; h<sub>FE</sub> (min): 120.0; V<sub>i (on)</sub> (min): 0.5 2mA / 0.3V; Original
BCR169S Siemens PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) Original
BCR169S Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BCR169SE6327 Infineon Technologies Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL PNP SOT363 Original
BCR169SH6327 Infineon Technologies Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL PNP SOT363 Original

BCR169S

Catalog Datasheet MFG & Type PDF Document Tags

BCR108W

Abstract: BCR169 , driver circuit · Built in bias resistor (R1 = 4.7 k) · BCR169S: Two internally isolated transistors with good matching in one multichip package · BCR169S: For orientation in reel see package , BCR169S C C1 B2 E2 3 6 5 4 R1 R1 R1 TR2 TR1 1 B 2 1 2 , -3 BCR169S WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR169W WSs 1=B 1Pb-containing Pin , 100 Unit V mA mW BCR169, TS 102°C 200 BCR169F, TS 128°C 250 BCR169S, T S 115
Infineon Technologies
Original
BCR108W BCW66 infineon marking code B2 SOT23 BCR169/F/W EHA07180 EHA07266

BCR169S

Abstract: VPS05604 BCR169S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface , BCR169S WSs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings , Application Note Thermal Resistance 1 Dec-13-2001 BCR169S Electrical Characteristics at TA , < 2% 2 Dec-13-2001 BCR169S DC Current Gain hFE = f (IC ) Collector-Emitter , 2 3 V 5 Vi(off) 3 Dec-13-2001 BCR169S Total power dissipation Ptot = f (TS
Infineon Technologies
Original
VPS05604
Abstract: circuit · Built in bias resistor (R1 = 4.7 k) · BCR169S / U: Two internally isolated transistors with good matching in one multichip package BCR169/F/L3 BCR169T/W C 3 BCR169S/U C1 6 B2 5 E2 4 R1 R1 , BCR169L3 BCR169S BCR169T BCR169U BCR169W Marking WSs WSs WS WSs WSs WSs WSs 1=B 1=B 1=B 1=B 1=B Pin , °C BCR169S, T S 115°C BCR169T, TS 109°C BCR169U, TS 118°C BCR169W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T Infineon Technologies
Original
BCR169S/U

marking WSs

Abstract: circuit · Built in bias resistor (R1 = 4.7 k) · BCR169S / U: Two internally isolated transistors with good matching in one multichip package BCR169/F/L3 BCR169T/W C 3 BCR169S/U C1 6 B2 5 E2 4 R1 R1 , BCR169L3 BCR169S BCR169T BCR169U BCR169W Marking WSs WSs WS WSs WSs WSs WSs 1=B 1=B 1=B 1=B 1=B Pin , °C BCR169S, T S 115°C BCR169T, TS 109°C BCR169U, TS 118°C BCR169W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T
Infineon Technologies
Original
marking WSs

BCR169

Abstract: BCR169F , driver circuit · Built in bias resistor (R1 = 4.7 k) · BCR169S / U: Two internally isolated transistors with good matching in one multichip package · BCR169S / U: For orientation in reel see package information below BCR169/F/L3 BCR169T/W BCR169S/U C C1 B2 E2 3 6 5 4 R1 R1 , - TSLP-3-4 BCR169S WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR169T WS 1 , BCR169F, TS 128°C 250 BCR169L3, TS 135°C 250 BCR169S, T S 115°C 250 BCR169T, TS 109
Infineon Technologies
Original
SOt323 marking code 6X
Abstract: , driver circuit â'¢ Built in bias resistor (R1 = 4.7 kâ"¦) â'¢ BCR169S: Two internally isolated transistors with good matching in one multichip package â'¢ BCR169S: For orientation in reel see package , BCR169S C C1 B2 E2 3 6 5 4 R1 R1 R1 TR2 TR1 1 B 2 1 2 , WSs 1=B BCR169S WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR169W WSs 1=B 2 , ‰¤ 102°C 200 BCR169S, TS ≤ 115°C 250 BCR169W, TS ≤ 124°C 250 Junction temperature Infineon Technologies
Original
BCR169/W

BCR169S

Abstract: VPS05604 BCR169S PNP Silicon Digital Transistor Array 4 5 Switching circuit, inverter, interface , Marking BCR169S WSs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 , refer to Application Note Thermal Resistance 1 Jul-12-2001 BCR169S Electrical , V, f = 1 MHz 1) Pulse test: t < 300 s; D < 2% 2 Jul-12-2001 BCR169S DC Current , -3 0 2 Vi(on) 1 2 3 V 5 Vi(off) 3 Jul-12-2001 BCR169S Total
Infineon Technologies
Original
Abstract: circuit · Built in bias resistor (R1 = 4.7 k) · BCR169S: Two internally isolated transistors with good matching in one multichip package · BCR169S: For orientation in reel see package information below · Pb-free (RoHS compliant) package · Qualified according AEC Q101 BCR169/W C 3 BCR169S C1 6 B2 5 E2 , BCR169S BCR169W Marking WSs WSs WSs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C - Package SOT23 , Collector current Total power dissipation BCR169, TS 102°C BCR169S, TS 115°C BCR169W, TS 124°C Junction Infineon Technologies
Original
AN077
Abstract: , driver circuit â'¢ Built in bias resistor (R1 = 4.7 kâ"¦) â'¢ BCR169S: Two internally isolated transistors with good matching in one multichip package â'¢ BCR169S: For orientation in reel see package , BCR169S C C1 B2 E2 3 6 5 4 R1 R1 R1 TR2 TR1 1 B 2 1 2 , -3 BCR169S WSs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR169W WSs 1=B 1Pb-containing Pin , 100 Unit V mA mW BCR169, TS ≤ 102°C 200 BCR169F, TS ≤ 128°C 250 BCR169S Infineon Technologies
Original

BCR169

Abstract: BCR169F isolated transistors with good matching in one package BCR169/F/L3 BCR169T/W BCR169S BCR169U C , -3 BCR169L3 WS 1=B 2=E 3=C - - - TSLP-3-4 BCR169S WSs 1=E1 2=B1 3=C2 4=E2 5 , °C 200 BCR169F, TS 128°C 250 BCR169L3, TS 135°C 250 BCR169S, T S 115°C 250 , BCR169L3 60 BCR169S 140 BCR169T 165 BCR169U 133 BCR169W Unit K/W 105 , dissipation Ptot = (TS) BCR169S 300 300 mW mW 200 Ptot Ptot 120 °C 200 150
Infineon Technologies
Original

BCR169

Abstract: BCR169F isolated transistors with good matching in one package BCR169/F/L3 BCR169T/W BCR169S/U SEMB3 C , -3 BCR169L3 WS 1=B 2=E 3=C - - - TSLP-3-4 BCR169S WSs 1=E1 2=B1 3=C2 4=E2 5 , , TS 128°C 250 BCR169L3, TS 135°C 250 BCR169S, T S 115°C 250 BCR169T, TS 109 , BCR169L3 60 BCR169S 140 BCR169T 165 BCR169U 133 BCR169W 105 SEMB3 , Total power dissipation Ptot = (TS) BCR169L3 Total power dissipation Ptot = (TS) BCR169S 300
Infineon Technologies
Original

c639

Abstract: C63716 BCR 185S BCR 185W BCR 191 BCR 191S BCR 192 BCR 22PN BCR 198 BCR 198S BCR 19SW BCR 169 BCR169S BCR 166
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OCR Scan
c639 C63716 MARKING 68W SOT-23 sot-23 MARKING 636 C337 40 C-639 14-099R BB619C

2sc3052ef

Abstract: 2n2222a SOT23 150 150 150 130 150 130 100 BCR169S BCR183S BCR183U BCR185S P P P P 50 50 50
Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W

cdma Booster schematic

Abstract: uwb transceiver circuit · Built in bias resistor (R1 = 4.7 k) · BCR169S / U: Two internally isolated transistors with good matching in one multichip package BCR169/F/L3 BCR169T/W C 3 BCR169S/U C1 6 B2 5 E2 4 R1 R1 , BCR169L3 BCR169S BCR169T BCR169U BCR169W Marking WSs WSs WS WSs WSs WSs WSs 1=B 1=B 1=B 1=B 1=B Pin , °C BCR169S, T S 115°C BCR169T, TS 109°C BCR169U, TS 118°C BCR169W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T
Infineon Technologies
Original
cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL TRANSISTOR SMD CODE PACKAGE SOT89 52 10A bridge 45 b 50 20 c1v B132-H9014-X-X-7600 NB07-1094

MMBD2104

Abstract: Transistor NEC 05F BCR169S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface , BCR169S WSs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings , Application Note Thermal Resistance 1 Dec-13-2001 BCR169S Electrical Characteristics at TA , < 2% 2 Dec-13-2001 BCR169S DC Current Gain hFE = f (IC ) Collector-Emitter , 2 3 V 5 Vi(off) 3 Dec-13-2001 BCR169S Total power dissipation Ptot = f (TS
SMD Code Book
Original
MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d MMBD2103 BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 BCR169S PNP Silicon Digital Transistor Array 4 5 Switching circuit, inverter, interface , Marking BCR169S WSs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 , refer to Application Note Thermal Resistance 1 Jul-12-2001 BCR169S Electrical , V, f = 1 MHz 1) Pulse test: t < 300 s; D < 2% 2 Jul-12-2001 BCR169S DC Current , -3 0 2 Vi(on) 1 2 3 V 5 Vi(off) 3 Jul-12-2001 BCR169S Total
Infineon Technologies
Original
600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 B192-H6780-G11-X-7600 SP000316315 SP000262119 SP000314997 SP000013996 SP000012557

MMBD2103

Abstract: ZENER DIODE t2d isolated transistors with good matching in one package BCR169/F/L3 BCR169T/W BCR169S/U SEMB3 C , -3 BCR169L3 WS 1=B 2=E 3=C - - - TSLP-3-4 BCR169S WSs 1=E1 2=B1 3=C2 4=E2 5 , , TS 128°C 250 BCR169L3, TS 135°C 250 BCR169S, T S 115°C 250 BCR169T, TS 109 , BCR169L3 60 BCR169S 140 BCR169T 165 BCR169U 133 BCR169W 105 SEMB3 , Total power dissipation Ptot = (TS) BCR169L3 Total power dissipation Ptot = (TS) BCR169S 300
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Original
MMBD2101 MMBD2102 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 ZENER DIODE t2d 93 BAT15-115S BAV105 LL4148 LL4448 BB241 BB249 LL914
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