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BCR119WH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN visit Digikey Buy

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Part : BCR119WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0170 Price Each : $0.0193
Part : BCR119WE6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 147,000 Best Price : $0.02 Price Each : $0.02
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BCR119W Datasheet

Part Manufacturer Description PDF Type
BCR119W Infineon Technologies NPN Silicon Digital Transistor Original
BCR119W Infineon Technologies R1=4.7 k ? Original
BCR119W Infineon Technologies Single AF Transistors for General Purpose Applications Original
BCR119W Infineon Technologies Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R<sub>1</sub> (typ): 4.7 kOhm; R<sub>2</sub>: 0.0 k?; h<sub>FE</sub> (min): 120.0; V<sub>i (on)</sub> (min): 0.5 2mA / 0.3V; Original
BCR119W Siemens NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) Original
BCR119WE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 Original
BCR119WH6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 Original

BCR119W

Catalog Datasheet MFG & Type PDF Document Tags

BCR119

Abstract: BCR119F =B2 6=C1 SOT363 BCR119T WKs 1=B 2=E 3=C - - - SC75 BCR119W WKs 1 , - Ptot BCR119, TS 102°C 250 BCR119S, T S 115°C 250 BCR119T, TS 109°C 250 BCR119W , BCR119 240 BCR119F 90 BCR119L3 60 BCR119S 140 BCR119T 165 BCR119W , ) BCR119T Total power dissipation Ptot = (TS) BCR119W 300 300 mW 200 P tot P tot mW , 10 0 10 0 tp Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR119W
Infineon Technologies
Original
bcr1 BCR119/F/L3 BCR119T/W EHA07264 EHA07265

BCR119L3

Abstract: BCR119 =B2 6=C1 SOT363 BCR119T WKs 1=B 2=E 3=C - - - SC75 BCR119W WKs 1 , - Ptot BCR119, TS 102°C 250 BCR119S, T S 115°C 250 BCR119T, TS 109°C 250 BCR119W , BCR119 240 BCR119F 90 BCR119L3 60 BCR119S 140 BCR119T 165 BCR119W , ) BCR119T Total power dissipation Ptot = (TS) BCR119W 300 300 mW 200 P tot P tot mW , 10 0 10 0 tp Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR119W
Infineon Technologies
Original

BCR119W

Abstract: VSO05561 BCR119W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , E EHA07264 Type Marking BCR119W WKs Pin Configuration 1=B 2=E Package 3 , calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCR119W , ) Pulse test: t < 300 s; D < 2% 2 Nov-29-2001 BCR119W DC Current Gain hFE = f (IC , 2 3 V 5 Vi(off) 3 Nov-29-2001 BCR119W Total power dissipation Ptot = f (TS
Infineon Technologies
Original
VSO05561

BCR119

Abstract: BCR119F =E 3=C - - - SC75 BCR119W WKs 1=B 2=E 3=C - - - SOT323 1 , 100 BCR119, TS 102°C 250 BCR119S, T S 115°C 250 BCR119T, TS 109°C 250 BCR119W , BCR119L3 60 BCR119S 140 BCR119T 165 BCR119W Unit K/W 105 1For calculation , = (TS) BCR119T Total power dissipation Ptot = (TS) BCR119W 300 300 mW mW 225 , ) Permissible Pulse Load BCR119W Ptotmax/P totDC = (tp) BCR119W 10 3 10 3 P totmax / P totDC
Infineon Technologies
Original
SCD-80
Abstract: BCR119S BCR119W Marking WKs WKs WKs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C - Package SOT23 , collector current Total power dissipationBCR119, TS 102°C BCR119S, TS 115°C BCR119W, TS 124°C Junction , BCR119W Tj Tstg Symbol RthJS Symbol VCEO VCBO Vi(fwd) Vi(rev) IE Ptot 200 250 250 150 -65 . 150 Value , ) BCR119W 300 mW Permissible Pulse Load RthJS = (tp) BCR119 10 3 K/W 250 225 10 2 Ptot 200 , = (tp ) BCR119S 10 3 Permissible Puls Load RthJS = (t p) BCR119W 10 3 K/W Ptotmax / PtotDC Infineon Technologies
Original
BCR119/W AN077

BCR119

Abstract: BCR119F =C1 SOT363 BCR119T WKs 1=B 2=E 3=C - - - SC75 BCR119W WKs 1=B 2=E 3 , , TS 109°C 250 BCR119W, TS 124°C mA mW 250 BCR119L3, TS 135°C V 200 BCR119F , BCR119 240 BCR119F 90 BCR119L3 60 BCR119S 140 BCR119T 165 BCR119W , -03-2003 BCR119. Total power dissipation Ptot = (TS) BCR119T Total power dissipation Ptot = (TS) BCR119W , . Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR119W Ptotmax/P totDC = (tp) BCR119W
Infineon Technologies
Original

BCR119W

Abstract: VSO05561 BCR119W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , E EHA07264 Type Marking BCR119W WKs Pin Configuration 1=B 2=E Package 3 , calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-16-2001 BCR119W , 1) Pulse test: t < 300 s; D < 2% 2 Jul-16-2001 BCR119W DC Current Gain hFE = f (IC , 2 3 V 5 Vi(off) 3 Jul-16-2001 BCR119W Total power dissipation Ptot = f (TS
Infineon Technologies
Original

BCR119S

Abstract: BCR119W =E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR119W WKs 1=B 1Pb-containing Pin Configuration 2 , BCR119W, TS 124°C 250 Junction temperature Tj Storage temperature Tstg Thermal , BCR119 240 BCR119F 90 BCR119S 140 BCR119W Unit K/W 105 1For , dissipation Ptot = (TS) BCR119W 300 300 mW mW 250 225 225 200 200 Ptot 250 , Puls Load RthJS = (tp) Permissible Pulse Load BCR119W Ptotmax/P totDC = (tp) BCR119W 10 3
Infineon Technologies
Original
infineon marking code B2 SOT23 BCW66 BCR108W BCR119/F/W

DIN 6784

Abstract: BCR119S BCR119T BCR119W Marking WKs WKs WK WKs WKs WKs 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2 , dissipationBCR119, TS 102°C BCR119F, TS 128°C BCR119L3, TS 135°C BCR119S, T S 115°C BCR119T, TS 109°C BCR119W , point 1) BCR119 BCR119F BCR119L3 BCR119S BCR119T BCR119W 1For calculation of R thJA please refer to , Ptot = (TS) BCR119W 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 , . Permissible Puls Load RthJS = (tp) BCR119W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = (tp
Infineon Technologies
Original
DIN 6784
Abstract: BCR119 WKs 1=B BCR119S WKs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR119W WKs 1 , mW 250 BCR119W, TS ≤ 124°C V 200 BCR119S, TS ≤ 115°C Unit 250 Junction , ) Symbol RthJS 150 °C -65 . 150 Value BCR119 ≤ 240 BCR119S ≤ 140 BCR119W , BCR119W 10 3 300 mW K/W 250 10 2 RthJS Ptot 225 200 175 10 1 150 0.5 , '(tp ) BCR119S BCR119W 10 3 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 Infineon Technologies
Original
Abstract: -3 BCR119S WKs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR119W WKs 1=B 1Pb-containing Pin , , T S ≤ 115°C 250 BCR119W, TS ≤ 124°C 250 Junction temperature Tj Storage , °C -65 . 150 Value BCR119 ≤ 240 BCR119F ≤ 90 BCR119S ≤ 140 BCR119W , dissipation Ptot = Æ'(TS) BCR119S Total power dissipation Ptot = Æ'(TS) BCR119W 300 300 mW mW , Load BCR119W Ptotmax/P totDC = Æ'(tp) BCR119W 10 3 10 3 Ptotmax / PtotDC K/W Infineon Technologies
Original

2sc3052ef

Abstract: 2n2222a SOT23 BCR108 BCR108W BCR112 BCR112W BCR116 BCR116W BCR119 BCR119W BCR129 BCR129W BCR133 BCR133W
Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W

cdma Booster schematic

Abstract: uwb transceiver =E 3=C - - - SC75 BCR119W WKs 1=B 2=E 3=C - - - SOT323 1 , 100 BCR119, TS 102°C 250 BCR119S, T S 115°C 250 BCR119T, TS 109°C 250 BCR119W , BCR119L3 60 BCR119S 140 BCR119T 165 BCR119W Unit K/W 105 1For calculation , = (TS) BCR119T Total power dissipation Ptot = (TS) BCR119W 300 300 mW mW 225 , ) Permissible Pulse Load BCR119W Ptotmax/P totDC = (tp) BCR119W 10 3 10 3 P totmax / P totDC
Infineon Technologies
Original
cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

MMBD2103

Abstract: ZENER DIODE t2d BCR119W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , E EHA07264 Type Marking BCR119W WKs Pin Configuration 1=B 2=E Package 3 , calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCR119W , ) Pulse test: t < 300 s; D < 2% 2 Nov-29-2001 BCR119W DC Current Gain hFE = f (IC , 2 3 V 5 Vi(off) 3 Nov-29-2001 BCR119W Total power dissipation Ptot = f (TS
-
Original
MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

SMD Codes

Abstract: TRANSISTOR SMD T1P BCR119 WKs 1=B BCR119S WKs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR119W WKs 1 , mW 250 BCR119W, TS ≤ 124°C V 200 BCR119S, TS ≤ 115°C Unit 250 Junction , ) Symbol RthJS 150 °C -65 . 150 Value BCR119 ≤ 240 BCR119S ≤ 140 BCR119W , BCR119W 10 3 300 mW K/W 250 10 2 RthJS Ptot 225 200 175 10 1 150 0.5 , '(tp ) BCR119S BCR119W 10 3 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2
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Original
TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor Transistor SMD a7s BAV105 LL4148 LL4448 BB241 BB249 LL914
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