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BCR116WH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN visit Digikey Buy

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BCR116W Datasheet

Part Manufacturer Description PDF Type
BCR116W Infineon Technologies R1=4.7 k ? R2=47 k ? Original
BCR116W Infineon Technologies Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R<sub>1</sub> (typ): 4.7 kOhm; R<sub>2</sub>: 47.0 k?; h<sub>FE</sub> (min): 70.0; V<sub>i (on)</sub> (min): 0.5 2mA / 0.3V; Original
BCR116W Siemens NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) Original
BCR116WE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 Original
BCR116WH6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3 Original

BCR116W

Catalog Datasheet MFG & Type PDF Document Tags

BCR116W

Abstract: VSO05561 BCR116W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2 , -16-2001 BCR116W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , % 2 Jul-16-2001 BCR116W DC Current Gain hFE = f (IC ) Collector-Emitter Saturation , ) 3 Jul-16-2001 BCR116W Total power dissipation Ptot = f (TS ) 300 Ptot mW 200
Infineon Technologies
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VSO05561

BCR116W

Abstract: VSO05561 BCR116W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2 , -29-2001 BCR116W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , % 2 Nov-29-2001 BCR116W DC Current Gain hFE = f (IC ) Collector-Emitter Saturation , ) 3 Nov-29-2001 BCR116W Total power dissipation Ptot = f (TS ) 300 Ptot mW 200
Infineon Technologies
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transistor marking code wgs

Abstract: wgs SOT-23 · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BCR116/F BCR116W C 3 , B1 3 C2 EHA07174 Type BCR116 BCR116F BCR116S BCR116W Marking WGs WGs WGs WGs 1=B 1=B 1 , °C BCR116S, T S 115°C BCR116W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR116 BCR116F BCR116S BCR116W 1For Symbol VCEO VCBO Vi(fwd) Vi , ) BCR116W 300 mW 250 225 250 225 Ptot 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120
Infineon Technologies
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transistor marking code wgs wgs SOT-23 726-BCR116SE6727 E6727

WGs SOT323

Abstract: BCR116 =B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR116T WGs 1=B 2=E 3=C - - - SC75 BCR116W , BCR116T, TS 109°C 250 BCR116W, TS 124°C 250 Junction temperature Tj Storage , BCR116T 165 BCR116W Unit K/W 105 1For calculation of R thJA please refer to Application , . Total power dissipation Ptot = (TS) BCR116T Total power dissipation Ptot = (TS) BCR116W 300 , Load RthJS = (tp) Permissible Pulse Load BCR116W Ptotmax/P totDC = (tp) BCR116W 10 3
Infineon Technologies
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BCR116L3 WGs SOT323 BCR116/F/L3 BCR116T/W

transistor marking code wgs

Abstract: marking WGs sot23 · Pb-free (RoHS compliant) package · Qualified according AEC Q101 BCR116 BCR116W C 3 BCR116S , C2 EHA07174 Type BCR116 BCR116S BCR116W Marking WGs WGs WGs 1=B 1=B Pin Configuration 2=E 2 , °C BCR116W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR116 BCR116S BCR116W Tj Tstg Symbol RthJS Symbol VCEO VCBO Vi(fwd) Vi(rev) IC Ptot 200 , 150 TS TS Total power dissipation P tot = (TS) BCR116W 300 mW Permissible Pulse Load
Infineon Technologies
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marking WGs sot23 infineon marking code B1 SOT23 AN077
Abstract: BCR116 BCR116W BCR116S C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 , BCR116W WGs 1=B 2=E 2=E 1 3=C 3=C - - Package - SOT23 SOT323 2011-08-19 , mW BCR116, TS ≤ 102°C 200 BCR116S, TS ≤ 115°C 250 BCR116W, TS ≤ 124°C 250 , ‰¤ 140 BCR116W Unit K/W ≤ 105 1For calculation of R thJA please refer to Application Note , Total power dissipation P tot = Æ'(TS) Permissible Pulse Load RthJS = Æ'(tp) BCR116 BCR116W 10 Infineon Technologies
Original
Abstract: SIEMENS NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R i=4.7kii, R2=47kii) BCR116W & Type BCR 116W Marking , Symbol min. Values typ. BCR116W Unit max. DC Characteristics Collector-emitter breakdown voltage , Current Gain hFE = f Oc) Ve e = 5V (common emitter configuration) ''CEsat = fih )' hFE = 20 BCR116W , 11.96 SIEMENS Total power dissipation p tot= M T'a *; t s ) * Package mounted on epoxy BCR116W -
OCR Scan

BCR116

Abstract: wgs t =B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR116T WGs 1=B 2=E 3=C - - - SC75 BCR116W , °C 250 BCR116S, T S 115°C 250 BCR116T, TS 109°C 250 BCR116W, TS 124°C 250 SEMH13 , 240 BCR116F 90 BCR116L3 60 BCR116S 140 BCR116T 165 BCR116W 105 , ./SEMH13 Total power dissipation Ptot = (TS) BCR116T Total power dissipation Ptot = (TS) BCR116W , Load BCR116W Ptotmax/P totDC = (tp) BCR116W 10 3 10 3 Ptotmax / PtotDC K/W RthJS
Infineon Technologies
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wgs t
Abstract: BCR116W SEMH13 WGs WGs WG WGs WGs WGs WG 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3 , 128°C BCR116L3, TS 135°C BCR116S, T S 115°C BCR116T, TS 109°C BCR116W, TS 124°C SEMH13, TS 75 , BCR116W SEMH13 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 May , ) BCR116W 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 , s 10 0 tp tp Permissible Puls Load RthJS = (tp) BCR116W 10 3 K/W Permissible Infineon Technologies
Original

marking WGs sot23

Abstract: infineon marking code B2 SOT23 information below · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BCR116/F BCR116W , =C - - - TSFP-3 BCR116S WGs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BCR116W WGs , S 115°C 250 BCR116W, TS 124°C 250 Junction temperature Tj Storage temperature , -65 . 150 Value BCR116 240 BCR116F 90 BCR116S 140 BCR116W Unit K/W , BCR116W 300 300 mW mW 225 200 200 Ptot 250 225 Ptot 250 175 175
Infineon Technologies
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infineon marking code B2 SOT23 SOt323 marking code 6X marking code R2 sot23 BCR108T SC75 transistor marking code

BCR116L3

Abstract: BCR116S =B 2=E 3=C - - - SC75 BCR116W WGs 1=B 2=E 3=C - - - SOT323 , , TS 135°C 250 BCR116S, T S 115°C 250 BCR116T, TS 109°C 250 BCR116W, TS 124 , BCR116F 90 BCR116L3 60 BCR116S 140 BCR116T 165 BCR116W Unit K/W 105 , . Total power dissipation Ptot = (TS) BCR116T Total power dissipation Ptot = (TS) BCR116W 300 , ) Permissible Pulse Load BCR116W Ptotmax/P totDC = (tp) BCR116W 10 3 10 3 P totmax / P totDC
Infineon Technologies
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marking WGs sot23

Abstract: transistor marking code wgs BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W Marking WGs WGs WG WGs WGs WGs 1=B 1=B 1=B 1=B 1 , °C BCR116T, TS 109°C BCR116W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W 1For calculation of , Ptot = (TS) BCR116W 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 , . Permissible Puls Load RthJS = (tp) BCR116W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = (tp
Infineon Technologies
Original
Abstract: 35b05 GlEDbT? IbO - 1998-11-01 SIEMENS BCR116W DC Current Gain hf£ = f (lc) Vqe = 5V -
OCR Scan
235LD5

2sc3052ef

Abstract: 2n2222a SOT23 BCR108 BCR108W BCR112 BCR112W BCR116 BCR116W BCR119 BCR119W BCR129 BCR129W BCR133 BCR133W
Infineon Technologies
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2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W

cdma Booster schematic

Abstract: uwb transceiver BCR116W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2 , -29-2001 BCR116W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , % 2 Nov-29-2001 BCR116W DC Current Gain hFE = f (IC ) Collector-Emitter Saturation , ) 3 Nov-29-2001 BCR116W Total power dissipation Ptot = f (TS ) 300 Ptot mW 200
Infineon Technologies
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cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

MMBD2103

Abstract: ZENER DIODE t2d =B 2=E 3=C - - - SC75 BCR116W WGs 1=B 2=E 3=C - - - SOT323 , , TS 135°C 250 BCR116S, T S 115°C 250 BCR116T, TS 109°C 250 BCR116W, TS 124 , BCR116F 90 BCR116L3 60 BCR116S 140 BCR116T 165 BCR116W Unit K/W 105 , . Total power dissipation Ptot = (TS) BCR116T Total power dissipation Ptot = (TS) BCR116W 300 , ) Permissible Pulse Load BCR116W Ptotmax/P totDC = (tp) BCR116W 10 3 10 3 P totmax / P totDC
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45
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