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BCR112E6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy
BCR112WH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy

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Part : BCR112E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0132 Price Each : $0.0154
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BCR112 Datasheet

Part Manufacturer Description PDF Type
BCR112 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 Original
BCR112 Infineon Technologies R1=4.7 k ? R2=4.7 k ? Original
BCR112 Infineon Technologies Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 4.7 kOhm; R<sub>2</sub>: 4.7 k?; h<sub>FE</sub> (min): 20.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V; Original
BCR112 Infineon Technologies NPN Silicon Digital Transistor Original
BCR112 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BCR112 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BCR112 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BCR112E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original
BCR112E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN DGTL AF SOT-23 Original
BCR112F Infineon Technologies NPN Silicon Digital Transistor Original
BCR112FE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R Original
BCR112FE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 Original
BCR112L3 Infineon Technologies NPN Silicon Digital Transistor Original
BCR112L3E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSLP-3-4 T/R Original
BCR112L3E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSLP-3 Original
BCR112T Infineon Technologies NPN Silicon Digital Transistor Original
BCR112TE6327 Infineon Technologies Digital Transistors - R1=4.7 kOhm, R2=4.7 kOhm Original
BCR112TE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SC75 Original
BCR112-T&R Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original
BCR112U Infineon Technologies NPN Silicon Digital Transistor Original
Showing first 20 results.

BCR112

Catalog Datasheet MFG & Type PDF Document Tags

WFs transistor

Abstract: WFs SOT23 Marking Pin Configuration Package BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W WFs WFs WF , °C BCR112T, TS 109°C BCR112U, TS 118°C BCR112W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W 1For , transistors with good matching in one package BCR112/F/L3 BCR112T/W C 3 BCR112U C1 6 B2 5 E2 4 , 0 tp tp 6 Aug-29-2003 BCR112. Permissible Puls Load RthJS = (tp) BCR112F 10 2
Infineon Technologies
Original
WFs transistor WFs SOT23 BCR112/F/L3 BCR112T/W EHA07184 EHA07174

WFs transistor

Abstract: bcr1 -65 . 150 Value BCR112 240 BCR112F 90 BCR112W Unit K/W 105 - 1For , BCR112. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit , information below · Pb-free (RoHS compliant) package1) · Qualified according AEC Q101 BCR112/F BCR112W , =C - - - SOT23 BCR112F WFs 1=B 2=E 3=C - - - TSFP-3 BCR112W , package may be available upon special request 1 2007-09-17 BCR112. Maximum Ratings Parameter
Infineon Technologies
Original
bcr1 BCR108W BCW66 BCR112/F

WFs transistor

Abstract: 2011-09-15 BCR112. Permissible Puls Load RthJS = (t p) BCR112W 10 3 K/W Permissible Pulse Load , BCR112. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , according AEC Q101 BCR112 BCR112W C 3 R1 R2 1 B 2 E EHA07184 Type BCR112 BCR112W Marking , mA mW Unit V 1 2011-09-15 BCR112. Thermal Resistance Parameter Junction - soldering point1) BCR112 BCR112W Symbol RthJS Value 240 105 Unit K/W 1For calculation of R thJA please
Infineon Technologies
Original
AN077

WFs transistor

Abstract: E6327 °C 200 BCR112F, TS 128°C 250 BCR112L3, TS 135°C 250 BCR112T, TS 109°C 250 BCR112U , -65 . 150 Value BCR112 240 BCR112F 90 BCR112L3 60 BCR112T 165 , ) internal isolated transistors with good matching in one package BCR112/F/L3 BCR112T/W BCR112U C , -29-2003 BCR112. Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR112T Ptotmax/P totDC = , BCR112. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit
Infineon Technologies
Original
E6327 SOT323 WF infineon marking code B2 SOT23 DIN 6784 c1

BCR112

Abstract: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2 , -29-2001 BCR112 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , % 2 Nov-29-2001 BCR112 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage , (off) 3 Nov-29-2001 BCR112 Total power dissipation Ptot = f (TS ) 300 Ptot mW
Infineon Technologies
Original
VPS05161

WFs transistor

Abstract: WFs SOT23 °C 200 BCR112F, TS 128°C 250 BCR112L3, TS 135°C 250 BCR112T, TS 109°C 250 BCR112U , -65 . 150 Value BCR112 240 BCR112F 90 BCR112L3 60 BCR112T 165 , ) internal isolated transistors with good matching in one package BCR112/F/L3 BCR112T/W BCR112U C , -29-2003 BCR112. Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR112T Ptotmax/P totDC = , BCR112. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit
Infineon Technologies
Original
Abstract: BCR112/F/L3 BCR112T/W C 3 BCR112U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR112 BCR112F BCR112L3 BCR112T BCR112U , 102°C BCR112F, TS 128°C BCR112L3, TS 135°C BCR112T, TS 109°C BCR112U, TS 118°C BCR112W, TS 124 , BCR112F BCR112L3 BCR112T BCR112U BCR112W 1For calculation of R thJA please refer to Application Note , 150 TS TS 5 2006-05-04 BCR112. Total power dissipation Ptot = (TS) BCR112U 300 mW Infineon Technologies
Original

BCR112

Abstract: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2 , -16-2001 BCR112 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , ; D < 2% 2 Jul-16-2001 BCR112 DC Current Gain hFE = f (IC ) Collector-Emitter , V 2.0 Vi(off) 3 Jul-16-2001 BCR112 Total power dissipation Ptot = f (TS ) 300
Infineon Technologies
Original

74XX32

Abstract: transistor B c167 . The BCR112 is a integrated digital switch comprising of two resistors and a NPN transistor connected , resistor are a integral part of the BCR112 this eliminates the need for additional external devices. The BCR112 digital switch performs two functions. First it converts the CPU VCC to a negative true logic , gates in a 74XX32 type device and that the BCR112 logic need not be repeated for each chip select , . 5VDC 100K P6.1 CS 1 P6.2 CS 2 P6.3 CS 3 P6.4 CS 4 CPU VCC BCR112 FIGURE 2: The
Siemens
Original
transistor B c167 SAC-C167 p61 smd transistor transistor c167 C1167 siemens software c167

SD524

Abstract: 74LX1G125 SD6 1V8 1 BCR112 DC2 1K8 R12 2.8V SD8 1V8 22R 1 5 4 1 2 3 n1G 1A GND MASTER C12 10nF BCR112 DC1 74LX1G125 VCC 1Y U4 SD9 1 2 3 , 1 C12 10nF 4 2 DC1;DC2 BCR112 5 2 L1;L2 2.2uH 6 1 L3
STMicroelectronics
Original
SD524 F525L SD10 STW8009 9/M01 9/E02 8009/ST

smd marking gc

Abstract: Q62702-G98 22 pF 10 nF R1 10 k C 12 0.5 pF X3 SMA BCR112 V2 RF X6 A Figure 2 C5 1.8 pF GND Backside MW16 CGY 360 17 R2 10 k X5 X2 SMA IC1 10 pF BCR112
Infineon Technologies
Original
Q62702-G98 smd marking gc rxic CGY 8 pin T1006 smd marking code vd MW-16 EHT08783 EHT08784 EHT08786 EHT08785
Abstract: . LO RES VDLO VDRF2 GND1 A /A RF ⡠IC1 O CGY360 X3 ⡠17 BCR112 , > o o Q. CM CM ° BCR112 SMA CM CM X4 VD O - V1 IF > ) Q. Q. O o -
OCR Scan
S9000 IS09001

tdi ccd

Abstract: 74LX1G125 SD6 1V8 1 BCR112 DC2 1K8 R12 2.8V SD8 1V8 22R 1 5 4 1 2 3 n1G 1A GND MASTER C12 10nF BCR112 DC1 74LX1G125 VCC 1Y U4 SD9 1 2 3 , 1 C12 10nF 4 2 DC1;DC2 BCR112 5 2 L1;L2 2.2uH 6 1 L3
STMicroelectronics
Original
tdi ccd 4P SOT323 imagik
Abstract: BCR112 X5 X3 SMA BCR112 RF X6 A Notes: C10 10nF X8 C11 10nF IF VDIF Infineon Technologies
Original
QS9000 ISO9001

BCR133

Abstract: cimax Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics (TA=25°C) j. /x FE(mln) / Case V., , , Vi(off)mai; Style 100(1. A /5 V VCEO V V ^ (o n ) ^Cimax) mA mW R2 k il k ii MHz 10mA/5V =5mA VCE =5V Lead Code 2mA/0.3V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W BCR146 BCR 148 BCR148W BCR158 BCR162 BCR166 BCR169 BCR183 BCR185
-
OCR Scan
BCR553 cimax BCR108W sot323 SOT-23 BCR185W BCR191 BCR192 BCR198 BCR198W BCR503

w 3425 nf

Abstract: smd code book X8 VD 10 k 22 nH C3 10 nF C6 22 pF L6 2.7 nH X3 SMA BCR112 V1 RF X5
Infineon Technologies
Original
Q62702-G82 w 3425 nf smd code book 3425 nf smd marking AB 6 PIN smd marking code book EHT08779 EHT08776 GPW05969

BC517 "cross reference"

Abstract: 2n5401 2n3904 BC849BLT1 BC849B BCR112 PDTC143ET BC849CLT1 BC849C BCR112W PDTC143EU BC850BLT1
Philips Semiconductors
Original
PMBT2369 BC517 "cross reference" 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference 2n2925 cross reference 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904

smd code book L2

Abstract: 340 mmic C6 10 nF 22 pF L6 2.7 nH X3 SMA BCR112 V1 RF X5 A Figure 2 Notes
Infineon Technologies
Original
smd code book L2 340 mmic Q62702-G81 EHT08778 EHT08777

CGY340

Abstract: C16 10nF V1 BCR112 C12 22pF GND backside MW16 C15 10nF &*< 3LQ 'HILQLWLRQV DQG
Infineon Technologies
Original
CGY340

wireless vga circuit

Abstract: L5 22nH X3 SMA V1 BCR112 X5 /A Notes: Package of all resistors and capacitors
Infineon Technologies
Original
wireless vga circuit

Q62702-C2254

Abstract: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2 , -29-2001 BCR112 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , % 2 Nov-29-2001 BCR112 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage , (off) 3 Nov-29-2001 BCR112 Total power dissipation Ptot = f (TS ) 300 Ptot mW
Siemens
Original
Q62702-C2254
Abstract: BCR112 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR112 WFs Pin Configuration 1=B 2 , -16-2001 BCR112 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , ; D < 2% 2 Jul-16-2001 BCR112 DC Current Gain hFE = f (IC ) Collector-Emitter , V 2.0 Vi(off) 3 Jul-16-2001 BCR112 Total power dissipation Ptot = f (TS ) 300 Infineon Technologies
Original
Abstract: SD6 1V8 1 BCR112 DC2 1K8 R12 2.8V SD8 1V8 22R 1 5 4 1 2 3 n1G 1A GND MASTER C12 10nF BCR112 DC1 74LX1G125 VCC 1Y U4 SD9 1 2 3 , 1 C12 10nF 4 2 DC1;DC2 BCR112 5 2 L1;L2 2.2uH 6 1 L3 -
OCR Scan

WFs transistor

Abstract: wfs marking 22 pF 10 nF R1 10 k C 12 0.5 pF X3 SMA BCR112 V2 RF X6 A Figure 2 C5 1.8 pF GND Backside MW16 CGY 360 17 R2 10 k X5 X2 SMA IC1 10 pF BCR112
-
OCR Scan
wfs marking Siemens transistor WFs
Showing first 20 results.