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Part : BC850B,215 Supplier : Nexperia Manufacturer : Avnet Stock : 21,000 Best Price : - Price Each : -
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Part : BC850BLT1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 36,000 Best Price : $0.0122 Price Each : $0.0162
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Part : BC850BW,115 Supplier : Nexperia Manufacturer : Avnet Stock : 12,000 Best Price : $0.0218 Price Each : $0.0301
Part : BC850BLT1G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 3,084 Best Price : $0.0240 Price Each : $0.11
Part : BC850BLT1G Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.0340 Price Each : $0.0350
Part : BC850BW RF Supplier : Taiwan Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.0240 Price Each : $0.04
Part : BC850B,215 Supplier : Nexperia Manufacturer : Future Electronics Stock : - Best Price : $0.0289 Price Each : $0.0342
Part : BC850BE6327HTSA1 Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : - Best Price : $0.0184 Price Each : $0.0197
Part : BC850BLT1G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : 3,000 Best Price : $0.0121 Price Each : $0.0133
Part : BC 850B E6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 36,000 Best Price : $0.02 Price Each : $0.02
Part : BC850B215 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 23,500 Best Price : $0.04 Price Each : $0.04
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Part : BC850BE6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 14,665 Best Price : $0.02 Price Each : $0.02
Part : BC850BE6327HTSA1 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 144,000 Best Price : $0.02 Price Each : $0.02
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Part : BC850B Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : 160 Best Price : $0.0890 Price Each : $0.1180
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Part : BC850BLT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.01 Price Each : $0.0260
Part : BC850BLT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,884 Best Price : $0.01 Price Each : $0.08
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Part : BC850BW Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : 1,807 Best Price : $0.02 Price Each : $0.13
Part : BC850B Supplier : Nexperia Manufacturer : Farnell element14 Stock : - Best Price : £0.0606 Price Each : £0.1950
Part : BC850BLT1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 3,079 Best Price : £0.0198 Price Each : £0.0843
Part : BC850BW Supplier : Nexperia Manufacturer : Farnell element14 Stock : 1,859 Best Price : £0.0480 Price Each : £0.1560
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BC850B Datasheet

Part Manufacturer Description PDF Type
BC850B Continental Device India Silicon Planar Eitaxial Transistors, SOT-23 Original
BC850B Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BC850B E-Tech Electronics General Purpose Transistors Original
BC850B Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC850B Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC850B Infineon Technologies SOT23 package Original
BC850B Infineon Technologies Low Noise Transistors; Package: PG-SOT23-3; Polarity: NPN; V<sub>CEO</sub> (max): 45.0 V; P<sub>tot</sub> (max): 330.0 mW; h<sub>FE</sub> (min): 200.0 - 450.0; I<sub>C</sub>: 2.0 mA; Original
BC850B Philips Semiconductors NPN general purpose transistors Original
BC850B Siemens NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) Original
BC850B Siemens NPN Silicon AF Transistor Original
BC850B Korea Electronics NPN transistor for general purpose and switching applications Scan
BC850B Motorola European Master Selection Guide 1986 Scan
BC850B N/A Transistor Shortform Datasheet & Cross References Scan
BC850B N/A Catalog Scans - Shortform Datasheet Scan
BC850B National Semiconductor Pro Electron Surface Mount Bipolar Devices Scan
BC850-B National Semiconductor Bipolar Pro Electron Series Scan
BC850B STMicroelectronics Shortform Data Book 1988 Scan
BC850B Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan
BC850B,185 NXP Semiconductors BC850B - BC850B - NPN general purpose transistors Original
BC850B,215 NXP Semiconductors NPN general purpose transistors - Complement: BC860B ; fT min: 100 MHz; hFE max: 450 ; hFE min: 200 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 45 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original
Showing first 20 results.

BC850B

Catalog Datasheet MFG & Type PDF Document Tags

BC10 npn transistor

Abstract: transistor bc 556 =2B; BC849C=2C; BC850B=2F; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0 µA) BC846A,B V(BR)EBO BC847A,B,C BC850B.C BC848A
Weitron
Original
BC850B/C BC847 BC848 BC846 BC850 BC849 BC10 npn transistor transistor bc 556 C8050 BC849C-2C bc848 NPN transistor BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C

C8050

Abstract: =2B; BC849C=2C; BC850B=2F; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0 µA) BC846A,B V(BR)EBO BC847A,B,C BC850B.C BC848A
Weitron
Original
BC846B BC847B BC847C BC848B BC848C

BC8468

Abstract: BC347C =1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B=2B; BC84902C; BC850B=2F: BC850C , , BW=200Hz) BC849B.C BC850B.C NF - 10 40 dB IH*46A!B-B( 847AJIIC BC848A/B.' , 1 BCK46AVB-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor PNP Silicon , ;B/C-BC849B/C BC850B/C Electrical Characteristics , = 10mA) BC347A.B.C BC850BC BC848A.B.C BC849B.C Collector-Emitter Breakdown VoltageBC846A.B (IC
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OCR Scan
BC8468 BC347C BCS46A pnp 400V BC347 BCS48 BC846/VB-BC847A/B/C

2FP TRANSISTOR

Abstract: 2gp Transistor general purpose transistors BC849; BC850 M BH724 BC849B; BC850B. Fig.2 DC current gain , BC849 BC849B BC849C MARKING CODE 2Dp 2Bp 2Cp TYPE NUMBER BC850 BC850B BC850C MARKING CODE , power dissipation DC current gain BC849B; BC850B; BC849C; BC850C 290 520 - ICM Plot hFE 200 420 , current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849; BC850 BC849B; BC850B BC849C
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OCR Scan
BCB50C 2FP TRANSISTOR 2gp Transistor BCB50 marking 2Fp bc850c, sot23 BC859 BC860 BC84S BC85C

BAV90

Abstract: bd139 smd -40 BC808-40 BC550B BC850B BC109B BC849B BC337 BC817 BC550C BC850C BCF32 BOX 19 BC556 BC856 BC109C , BCH61 BD135-10 BCX54-1Û BC557A BC857A BCX79 BCX71 BD135-16 BCX54-16 BCW69 BCY56 BC850B BD136 BCX51 t , BC850B BD 140 BCX53 BC559C BC859C BCX70H BD140-6 BCX53-G BC560 BC860 BCY59-IX BC850B BD140-10 BCX53 , BSR40 2N2368 BSV52 2N2369 BSV52 2N2369A BSV52 2N2483 BC850B 2N2484 BC850B/C 2N894A
-
OCR Scan
BC157 BAV90 bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd 0D12DE BA243 BC146/02 BC849B/C BC338 BC818

MARKING 358 sot-23

Abstract: marking code 359 sot-23 Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector - Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C , BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE - - - , 770 V V mV - BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C, BC850B,C BC848A,B , Hz) BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C fT Cobo NF 100 - - - - - - - -
ON Semiconductor
Original
MARKING 358 sot-23 marking code 359 sot-23 marking 1G SOT23 359 sot23 355 sot-23 On semiconductor date Code sot-23 BC846ALT1 BC846ALT3 BC846BLT1 BC846BLT3 BC847ALT1 BC847ALT1G

marking 1F SOT-23

Abstract: BC850BLT1 BC850CLT1 DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L; BC849BLT1 = 2B; BC849CLT1 = 2C; BC850BLT1 = , Typ Max Unit OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage BC846A,B BC847A,B,C, BC850B,C , ) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage (IC = 10 mA) Emitter­Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) BC846A,B BC847A,B,C, BC850B,C BC848A,B
ON Semiconductor
Original
marking 1F SOT-23 3000/T 000/T

BC846BLT1

Abstract: BC848C CLT1 thru BC850BLT1,CLT1 3 1 2 CASE 318­08, STYLE 6 Symbol 265 240 to 265 SOT­23 (TO , OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B , ) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage BC846A,B (IC = 10 µA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Emitter­Base Breakdown Voltage BC846A,B BC847A,B,C (IE = 1.0 µA) BC848A,B,C, BC849B,C, BC850B,C Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA =
ETL Semiconductor
Original
236AB
Abstract: =2B; BC849C=2C; BC850B=2F; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0 µA) BC846A,B V(BR)EBO BC847A,B,C BC850B.C BC848A Weitron
Original
Abstract: ; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 , Typ Max Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA , (IC=10 µA ,VEB=0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C , BC847A,B,C BC850B.C BC848A,B,C BC849B,C 6.0 6.0 5.0 - - V - - 15 5.0 nA mA Weitron
Original
Abstract: BC846A,B BC847A,B,C BC850B,C V (BR)CBO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B,C V (BR)CEO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B,C V (BR)EBO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B,C , , BC847B, BC848B BC849B, BC850B BC847C, BC848C, BC849C, BC850C I c = 10mA, I B = 0.5mA I c = 100mA, I B = , 10mA, V CE = 5.0V, f = 100MHz V CB = 10V, f = 1.0MHz BC846A,B BC847A,B,C BC848A,B,C BC849B,C BC850B,C , Type number BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C Marking Formosa MS
Original
BC848A/B/C- BC849B/C-BC850B/C DS-231154

bc849

Abstract: bc850c 10â'1 1 102 10 IC (mA) 103 BC849B; BC850B. Fig.2 DC current gain; typical values , MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , BC849C BC850B BC850C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors Product data sheet , 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see
NXP Semiconductors
Original
MAM255 R75/06/

BC846ALT1G

Abstract: BC849BLT1G Collector -Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V , = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 - - - - - - V Collector -Base Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B,C , Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 , , BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C
ON Semiconductor
Original
BC846ALT1G BC849BLT1G NPN BC846B SOT23 BC847CLT1G SOT-23 marking 016 bc847blt1g BC846ALT1/D

On semiconductor date Code sot-23

Abstract: sot-23 body marking C 1 Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 , ) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 - - - - - - V Collector -Base Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V , ) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 5.0 - - - - - - , BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C
ON Semiconductor
Original
sot-23 body marking C 1 sot-23 body marking A 4 MARKING A1 SOT-23 SOT-23 marking 2F sot-23 body marking A c marking code SOT-23 2F BRD8011/D

BC846ALT1

Abstract: BC846BLT1 Resistance Solderability CLT1 thru BC850BLT1,CLT1 3 1 2 CASE 318­08, STYLE 6 Symbol 265 240 , (IC = 10 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector­Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage BC846A,B (IC = 10 µA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Emitter­Base Breakdown Voltage BC846A,B BC847A,B,C (IE = 1.0 µA) BC848A,B,C, BC849B,C, BC850B,C Collector Cutoff Current
Leshan Radio Company
Original
b m34 w

Transistors

Abstract: BC849 BC850 ; BC850B. Fig.2 DC current gain; typical values. MBH725 600 handbook, full pagewidth VCE = 5 , MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , BC849C BC850B BC850C 2004 Jan 16 2 VERSION SOT23 Philips Semiconductors Product , and 3 - 240 - - 450 - 200 290 450 420 520 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see Figs 2 and 3 BC849C
Philips Semiconductors
Original
Transistors BC849 BC850 SCA76

BC846BLT1

Abstract: BC847 SOT23 Transistors NPN Silicon BASE 2 EMITTER MAXIMUM RATINGS BC846ALT1 ,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1 , Voltage BC846A,B v(BR)CEO 65 â'" â'" V (IC = 10 mA) BC847A,B,C, BC850B,C 45 â'" â'" BC848A,B,C, BC849B , 0) BC847A,B,C, BC850B,C 50 â'" â'" BC848A,B,C, BC849B,C 30 â'" â'" Collector-Base Breakdown Voltage BC846A,B v(BR)CBO 80 â'" â'" V Cc = 10 nA) BC847A,B,C, BC850B,C 50 â'" â'" BC848A,B,C, BC849B,C , 6.0 â'" â'" BC848A,B,C, BC849B,C, BC850B,C 5.0 â'" â'" Collector Cutoff Current (Vcb = 30 V) 'CBO
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OCR Scan
BC847 SOT23

bc327 smd

Abstract: bd139 smd BC849B BC849C BC850 BC850B BC850C BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BCW29 , -16 BCX53 BCP53 BCX53-10 BCP53-10 BCX53-16 BCP53-16 BCW60 BCX70 BCW61 BCX71 BC850B BC636-10 BC636 , 2N3904 2N3906 2N4030 2N4031 2N4032 SMD BC850B/C PMBT2907 PMBT2907A PMBT2907 PMBT2907A BSR43 BSP43 , PMBT2222A BSR40 PMBT2369 PMBT2369A BC850B February 1995 39
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OCR Scan
bc327 smd bc109 smd BC640 smd bc107 smd BC547 smd 2n4401 smd BC107 BC107A BC107B BC108 BC108A BC108B

transistor 1f sot-23

Abstract: transistor 2F to-236 , BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 - - - - - - V Collector -Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES , BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CBO 80 50 30 - - - - - - V Emitter -Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C , , BC850B BC847C, BC848C, BC849C, BC850C Collector -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA
ON Semiconductor
Original
transistor 1f sot-23 transistor 2F to-236 BC847 sot package sot-23 transistors sot-23 "Marking code 26" BC850CLT1G MARKING bc847 SOT-23

BC846BLT1

Abstract: 2f bc850 °C Derate above 25°C mW/°C BC850BLT1 Thermal Resistance, Junction to Ambient (Note 1.) 1.8 , = 2C; BC850BLT1 = 2F; BC850CLT1 = 2G 1. FR­5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 , Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 ­ , ,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 ­ ­ ­ ­ ­ ­ V OFF CHARACTERISTICS Collector­Base Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C
ON Semiconductor
Original
2f bc850

BC848

Abstract: BC847 mA, Vce = 5 V , / = 1 kHz BC 846 A . BC 848 A - B C 8 4 6 B . BC850B BC 847 C . BC 850
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OCR Scan
Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741

F21E

Abstract: transistors BC 848 BC849 BC849B BC849C MARKING CODE 2Dp 2Bp 2Cp TYPE NUMBER BC850 BC850B BC850C MARKING CODE , power dissipation DC current gain BC849B; BC850B; BC849C; BC850C 290 520 - ICM Plot hFE 200 420 , current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849; BC850 BC849B; BC850B BC849C , general purpose transistors BC849; BC850 M BH724 BC849B; BC850B. Fig.2 DC current gain
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OCR Scan
F21E transistors BC 848 ic 846 l Bc 188 pnp transistors BC 183 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 Q62702-C1885 Q62702-C1712

C1507

Abstract: b 857 BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon , =2B; BC849C=2C; BC850B=2F; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina WE ITR O N http://www.weitron.com.tw BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C , , BC848C hFE (IC= 2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC849B. BC850B , , BC849B,C, BC850B,C f=1.0 kHz, BW=200Hz) WEITRON http://www.weitron.com.tw fT 100 - Cobo
Siemens
Original
C1507 b 857 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750

C1741

Abstract: Q62702-C1741 1 BCK46AVB-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor PNP Silicon , =1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B=2B; BC84902C; BC850B=2F: BC850C , ;B/C-BC849B/C BC850B/C Electrical Characteristics , Voltage BC846A.B flC=10pA) BC847A.B.C BC850B C BC848A.B.C BC849B.C V(BR)CB0 80 50 30 V Emitter-Base Breakdown Voltage BC846A.B (IE=10MA) BC847A.B.C BC850B C BCS48A.B,C BC849B.C V(BR)EB0 6.0 6.0 5.0 â'¢ â'¢ V
Siemens
Original
C1741 C1885 bc 580 bc 846 marking 848 C1704

BC850CLT1G

Abstract: BC847ALT1G OFF CHARACTERISTICS Collector­Emitter Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B , ) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage BC846A,B (IC = 10 µA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Emitter­Base Breakdown Voltage BC846A,B BC847A,B,C (IE = 1.0 µA) BC848A,B,C, BC849B,C, BC850B,C Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = , ) BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C
ON Semiconductor
Original
BC848ALT1G
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