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BC849B Datasheet

Part Manufacturer Description PDF Type
BC849B Continental Device India Silicon Planar Eitaxial Transistors, SOT-23 Original
BC849B Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BC849B E-Tech Electronics General Purpose Transistors Original
BC849B Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC849B General Semiconductor General Purpose Bipolar Transistor, NPN, 30V, SOT-23, 3-Pin Original
BC849B General Semiconductor Small Signal Transistors (NPN) Original
BC849B Infineon Technologies NPN Silicon AF Transistor Original
BC849B Infineon Technologies Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; V<sub>CEO</sub> (max): 30.0 V; V<sub>CBO</sub> (max): 30.0 V; I<sub>C</sub>(max): 100.0 mA; I<sub>CM</sub> (max): 200.0 mA; Original
BC849B Infineon Technologies SOT23 package Original
BC849B Philips Semiconductors NPN general purpose transistors Original
BC849B Siemens NPN Silicon AF Transistor Original
BC849B Siemens NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) Original
BC849B Zowie Technology GENERAL PURPOSE TRANSISITOR NPN SILICON Original
BC849B Korea Electronics NPN transistor for general purpose and switching applications Scan
BC849B Motorola European Master Selection Guide 1986 Scan
BC849B N/A Transistor Shortform Datasheet & Cross References Scan
BC849B N/A Catalog Scans - Shortform Datasheet Scan
BC849B National Semiconductor Bipolar Pro Electron Series Scan
BC849B STMicroelectronics Shortform Data Book 1988 Scan
BC849B Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan
Showing first 20 results.

BC849B

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List Formosa MS List , BC848A/B/C- BC849B/C-BC850B/C General Purpose Transistors NPN Silicon Features 0.045 (1.15) Formosa , Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C Electrical characteristics (AT T =25 C , BC846A,B BC847A,B,C BC850B,C V (BR)CBO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B,C V (BR)CEO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B,C V (BR)EBO BC848A,B,C BC849B,C BC846A,B BC847A,B,C BC850B,C Formosa MS
Original
BC849B/C-BC850B/C DS-231154

2FP TRANSISTOR

Abstract: 2gp Transistor BC849 BC849B BC849C MARKING CODE 2Dp 2Bp 2Cp TYPE NUMBER BC850 BC850B BC850C MARKING CODE , power dissipation DC current gain BC849B; BC850B; BC849C; BC850C 290 520 - ICM Plot hFE 200 420 , current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849; BC850 BC849B; BC850B BC849C , general purpose transistors BC849; BC850 M BH724 BC849B; BC850B. Fig.2 DC current gain
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OCR Scan
BCB50C 2FP TRANSISTOR 2gp Transistor BCB50 marking 2Fp bc850c, sot23 BC859 BC860 BC84S BC85C

MARKING 358 sot-23

Abstract: marking code 359 sot-23 BC848BLT3 BC848CLT1 BC848CLT1G BC849BLT1 BC849BLT3 BC849CLT1 BC849CLT1G BC850BLT1 BC850CLT1 BC850CLT1G , Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector - Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C , BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE - - - , 770 V V mV - BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C, BC850B,C BC848A,B
ON Semiconductor
Original
MARKING 358 sot-23 marking code 359 sot-23 marking 1G SOT23 359 sot23 355 sot-23 On semiconductor date Code sot-23 BC846ALT1 BC846 BC847 BC848 BC846ALT3 BC846BLT1

BAV90

Abstract: bd139 smd conventional microminiature type type type typ& type type BA243 BAT 18 BC146/02 BC849B/C BC338 BC818 BA314 , BC849B BC108A BC848A BC327-40 BC807-40 BCF32 BCW31 BC327A BC549C BC849C BC108B BC848B BC328 BC808 , -40 BC808-40 BC550B BC850B BC109B BC849B BC337 BC817 BC550C BC850C BCF32 BOX 19 BC556 BC856 BC109C BC849C BC337-16 BC817-16 BCW89 BCFC33 BC337-25 BC817-25 BC556A BC856A BC146/01 BC849B BCF32 BC337 , BCY58-VII BCW60A BD137-10 BCX55-10 BCW29 BCY58-VIII BC849B BD137-16 BCX55-1G BCS58B BC858B BCW60B B0138
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OCR Scan
BC157 BAV90 bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd 0D12DE BC849B/C BAS17 BCF32/33 BCX20 BA480

transistor 1f sot-23

Abstract: transistor 2F to-236 Marking Package BC849BLT1 SOT-23 BC849BLT1G BC849BLT3 SOT-23 (Pb-Free) 2B BC849BLT3G , , BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 - - - - - - V Collector -Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES , BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CBO 80 50 30 - - - - - - V Emitter -Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C
ON Semiconductor
Original
transistor 1f sot-23 transistor 2F to-236 BC847 sot package sot-23 transistors sot-23 "Marking code 26" sot-23 body marking A 4 MARKING bc847 SOT-23 BC846ALT1/D

BC10 npn transistor

Abstract: transistor bc 556 Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B=2B , , BC848C hFE (IC= 2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC849B. BC850B , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - -
Weitron
Original
BC850B/C BC10 npn transistor transistor bc 556 C8050 BC849C-2C bc848 NPN transistor BC848A/B/C-BC849B/C

bc849

Abstract: bc850c MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , TYPE NUMBER BC849B PACKAGE NAME â' DESCRIPTION plastic surface mounted package; 3 leads , 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see , 10â'1 1 102 10 IC (mA) 103 BC849B; BC850B. Fig.2 DC current gain; typical values
NXP Semiconductors
Original
MAM255 R75/06/

BC846BLT1

Abstract: BC848C ,C BC848A,B,C, BC849B,C Collector­Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage BC846A,B (IC = 10 µA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Emitter­Base Breakdown Voltage BC846A,B BC847A,B,C (IE = 1.0 µA) BC848A,B,C, BC849B,C, BC850B,C Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = , ) BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C
ETL Semiconductor
Original
BC847ALT1 BC847BLT1 236AB BC847CLT1 BC848ALT1 BC848BLT1

C8050

Abstract: Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B=2B , , BC848C hFE (IC= 2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC849B. BC850B , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - -
Weitron
Original

BC846BLT1

Abstract: BC847 SOT23 Voltage BC846A,B v(BR)CEO 65 â'" â'" V (IC = 10 mA) BC847A,B,C, BC850B,C 45 â'" â'" BC848A,B,C, BC849B , 0) BC847A,B,C, BC850B,C 50 â'" â'" BC848A,B,C, BC849B,C 30 â'" â'" Collector-Base Breakdown Voltage BC846A,B v(BR)CBO 80 â'" â'" V Cc = 10 nA) BC847A,B,C, BC850B,C 50 â'" â'" BC848A,B,C, BC849B,C , 6.0 â'" â'" BC848A,B,C, BC849B,C, BC850B,C 5.0 â'" â'" Collector Cutoff Current (Vcb = 30 V) 'CBO , 180 220 BC846B, BC847B, BC848B, BC849B, BC850B 200 290 450 BC847C, BC848C, BC849C, BC850C 420 520
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OCR Scan
BC847 SOT23

SOT-23

Abstract: TRANSISTOR SMD fr 21 Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List , /B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C General Purpose Transistors NPN Silicon Features Package , SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C Electrical characteristics , . MAX. UNIT BC846A,B BC847A,B,C BC850B,C V (BR)CBO BC848A,B,C BC849B,C 80 50 30 V I c = 10mA BC846A,B BC847A,B,C BC850B,C V (BR)CEO BC848A,B,C BC849B,C 65 45 30 V Emitter-Base
Formosa MS
Original
SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65

marking 1F SOT-23

Abstract: /°C °C/W °C BC847CLT1 BC847CLT3 BC848ALT1 BC848BLT1 BC848BLT3 BC848CLT1 BC849BLT1 BC849CLT1 , ; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L; BC849BLT1 = 2B; BC849CLT1 = 2C; BC850BLT1 = , (IC = 10 mA) BC848A,B,C, BC849B,C Collector­Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage (IC = 10 mA) Emitter­Base , ,C, BC849B,C BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C (VCB = 30 V, TA = 150°C) V(BR)CEO 65
ON Semiconductor
Original
marking 1F SOT-23 3000/T 000/T
Abstract: Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B=2B , , BC848C hFE (IC= 2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC849B. BC850B , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - Weitron
Original

Transistors

Abstract: BC849 BC850 MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , TYPE NUMBER BC849B PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads , and 3 - 240 - - 450 - 200 290 450 420 520 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see Figs 2 and 3 BC849C , VCE = 5 V hFE 200 100 0 10-2 10-1 1 102 10 IC (mA) 103 BC849B
Philips Semiconductors
Original
Transistors BC849 BC850 SCA76
Abstract: ; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 , , BC848B BC849B. BC850B, BC847C, BC848C, BC849C, BC850C Collector-Emitter Saturation Voltage (IC= 10mA , ) BC848A,B,C BC849B,C 65 45 30 - - V V(BR)CES Collector-Emitter Breakdown VoltageBC846A,B (IC=10 µA ,VEB=0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C Weitron
Original

BC846ALT1

Abstract: BC846BLT1 (IC = 10 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector­Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage BC846A,B (IC = 10 µA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Emitter­Base Breakdown Voltage BC846A,B BC847A,B,C (IE = 1.0 µA) BC848A,B,C, BC849B,C, BC850B,C Collector Cutoff Current , , BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C Collector­Emitter Saturation Voltage (I C = 10 mA
Leshan Radio Company
Original
b m34 w

On semiconductor date Code sot-23

Abstract: sot-23 body marking C 1 -23 BC849BLT1G BC849BLT3 SOT-23 (Pb-Free) 2B BC849BLT3G SOT-23 (Pb-Free) SOT-23 (Pb-Free) 2C , Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 , ) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C V(BR)CES 80 50 30 - - - - - - V Collector -Base Breakdown Voltage (IC = 10 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V , ) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)EBO 6.0 6.0 5.0 - - - - - -
ON Semiconductor
Original
sot-23 body marking C 1 BC847BLT1G MARKING A1 SOT-23 SOT-23 marking 2F sot-23 body marking A c marking code SOT-23 2F BRD8011/D

bc847blt1g

Abstract: marking 1a SBC848BLT1G BC848BLT3G BC848CLT1G BC848CLT3G BC849BLT1G BC849BLT3G BC849CLT1G BC849CLT3G BC850BLT1G BC850CLT1G , Voltage BC846A, B, SBC846A, B BC847A, B, C, BC850B, C, SBC847C (IC = 10 mA) BC848A, B, C, BC849B, C , , SBC847C BC848A, B, C, BC849B, C, SBC848B Collector - Base Breakdown Voltage (IC = 10 mA) Emitter - Base , , BC848B, BC849B, BC850B, SBC846B, SBC848B BC847C, BC848C, BC849C, BC850C, SBC847C Collector - Emitter , , SBC848B BC849B,C, BC850B,C fT Cobo NF - - - - 10 4.0 100 - - - - 4.5 MHz pF dB VCE(sat) VBE(sat) VBE(on
ON Semiconductor
Original
SBC846ALT1G marking 1a SBC846ALT1G SERIES SBC847BLT1 1G t 90 SOT-23 BC846ALT1G AEC-Q101 SBC846 SBC847 SBC848

BC850C

Abstract: BC849C MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , TYPE NUMBER BC849B PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads , 3 - 240 - - 450 - 200 290 450 420 520 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see Figs 2 and 3 BC849C , 5 V hFE 200 100 0 10-2 10-1 1 102 10 IC (mA) 103 BC849B; BC850B
NXP Semiconductors
Original
2F PNP SOT23 bc850 nxp 2G BC850C NXP BC849B
Abstract: Characteristics Ta = 25 Parameter Symbol ICBO emitter cut-off current DC current gain IEBO BC849B; BC850B Testconditons Min nA 5 ìA 100 nA 240 450 hFE BC849B; BC850B Typ , TYPE BC849B BC849C BC850B BC850C Marking 2B 2C 2F 2G http TY Semiconductor
Original
Abstract: Voltage BC846A,B v(BR)CEO 65 â'" â'" V (IC = 10 mA) BC847A,B,C, BC850B,C 45 â'" â'" BC848A,B,C, BC849B , 0) BC847A,B,C, BC850B,C 50 â'" â'" BC848A,B,C, BC849B,C 30 â'" â'" Collector-Base Breakdown Voltage BC846A,B v(BR)CBO 80 â'" â'" V Cc = 10 nA) BC847A,B,C, BC850B,C 50 â'" â'" BC848A,B,C, BC849B,C , 6.0 â'" â'" BC848A,B,C, BC849B,C, BC850B,C 5.0 â'" â'" Collector Cutoff Current (Vcb = 30 V) 'CBO , 180 220 BC846B, BC847B, BC848B, BC849B, BC850B 200 290 450 BC847C, BC848C, BC849C, BC850C 420 520 -
OCR Scan
S3R31 MBB012 53T31 DD24M

2FP TRANSISTOR

Abstract: BC850B C848A BC846B, BC847B, B C848B B C847C, B C 84 8C BC846A, BC847A, B C848A BC846B, BC847B, BC848B, BC849B , , BW - 200 Hz). BC846A, BC847A, B C848A BC846B, BC847B, B C848B B C847C, B C848C BC849B,C, B C850B .C I
Philips Semiconductors
Original
M3D088 SCA55

BC850 SOT23

Abstract: C849 Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L;BC849B , Collector-Emitter Breakdown VoltageBC846A,B V(BR)CEO BC847A,B,C BC850B.C (IC= 10mA) BC848A,B,C BC849B,C 65 , =0) BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 µA) BC846A,B V(BR)CBO BC847A,B,C BC850B.C BC848A,B,C BC849B,C 80 50 30 - - , ,B,C BC849B,C 6.0 6.0 5.0 - - V - - 15 5.0 nA mA 110 200 90 150
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OCR Scan
BC850 SOT23 C849 276.C850

B 660 TG

Abstract: BCB46B (IC = 10 mA) BC848A,B,C, BC849B,C Collector­Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C Collector­Base Breakdown Voltage (IC = 10 mA) Emitter­Base , ,C, BC849B,C BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C (VCB = 30 V, TA = 150°C) V(BR)CEO 65 , , BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat , ) BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C fT Cobo NF ­ ­ ­ ­ 10 4.0 100 ­ ­ ­ ­ 4.5 MHz pF dB
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OCR Scan
B 660 TG BCB46B EO65 BCB46 C848ALT1 C847A C849B BC847/BC848
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