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Part Manufacturer Description Datasheet BUY
BC848CW-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3 visit Digikey Buy
BC848BWT106 ROHM Semiconductor Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN visit Digikey Buy
BC848A-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, GREEN,PLASTIC PACKAGE-3 visit Digikey Buy
BC848AW-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3 visit Digikey Buy
BC848C-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, GREEN,PLASTIC PACKAGE-3 visit Digikey Buy
BC848C-TP Micro Commercial Components Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy

BC848 equivalent

Catalog Datasheet MFG & Type PDF Document Tags

BC848 equivalent

Abstract: bc847 Typ Max hie BC846 BC848 BC850 60 110 60 110 Equivalent Noise Voltage en µs , Typ Max hie BC846 BC848 BC850 60 110 60 110 Equivalent Noise Voltage en µs , SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC846 BC848 BC850 ISSUE 6 - JANUARY , BC856 BC846B1B BC848CZ1L BC847 BC857 BC847AZ1E BC849B2B BC848 BC858 BC847B1F , 80 80 65 50 50 45 BC848 BC849 30 30 30 30 30 30 5 6 BC850 50 50 45
Zetex Semiconductors
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BC848 equivalent X10-4 BC849C-2C spice bc847 BC846A DSA003670 BC846AZ1A BC848B1K BC849C2C BC859 BC847C1GZ BC850B2FZ

BC850 SOT23

Abstract: -2C BC850B-2FZ BC850C-Z2G COMPLEMENTARY TYPES BC846 BC847 BC848 BC849 BC850 BC856 BC857 BC858 BC859 BC860 BC846 BC848 BC850 BC847 BC849 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYMBOL V CBO V CES V CEO V EBO 'c 'c m 'b m 'e m BC846 BC847 BC848 BC849 BC850 UNIT V V V V mA mA mA mA mW °C Collector-Base , otherwise stated). PARAMETER Collector Cut-Off Current SYMBOL 'c b o BC846 BC847 BC848 15 BC849 BC850 , at constant base current. BC846 BC848 BC850 BC847 BC849 ELECTRICAL CHARACTERISTICS
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OCR Scan
BC850 SOT23 BC846A-Z1A BC846B-1B BC847A-Z1E BC847B-1F BC847C-1GZ BC848A-1JZ

B 660 TG

Abstract: BC847 BC849 BC846 BC848 BC850 SOT23 IM PN SILICON PLANAR GENERAL PURPOSE TRANSISTORS , MAXIMUM RATINGS PARAMETER SYMBOL C ollector-B ase V oltag e BC846 BC847 BC848 BC849 BC850 UNIT , BC847 BC848 BC849 BC850 SYMBOL UNIT CONDITIONS Base-Emitter Saturation Voltage , 11mA, V CE= 1V at constant base current. â  TT7D57A DQD&IIH T23 â  DS20 BC846 BC848 BC850 , Static Forward Group VI Current Transfer Ratio hF E BC846 BC847 BC848 BC849 BC850 Min. Typ
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OCR Scan
B 660 TG BC848B BC846B BC848C BC849B BC847A BC847B

K1010

Abstract: BC846 Jul-10-2001 BC846.BC850 Maximum Ratings Parameter Symbol BC846 BC847 BC848 , (BR)CEO V BC846 65 - - BC847/850 45 - - BC848/849 30 - - BC846 80 - - BC847/850 50 - - BC848/849 30 - - Collector-base , 50 - - BC848/849 30 - - BC846/847 6 - - BC848-850 5 - - , kHz, Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , f = 10 . 50 Hz 0.135
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K1010 bc848b equivalent BC847C BC848A BC849C BC850B BC850C VPS05161
Abstract: | NPN silicon planar general purpose transistors BC846 BC848 BC850 BC847 BC849 ABSOLUTE MAXIMUM , BC847 BC848 BC849 BC850 V CBO VCES V CEO V EBO ·c 'cm !bm " 'em 80 80 65 6 100 200 200 200 50 50 45 6 , Collector cut-off current Symbol 'c b o BC846 BC847 BC848 BC849 BC850 Unit 15 5 90 250 200 600 300 600 , Parameter Symbol BC846 BC847 BC848 BC849 BC850 Unit Static forward current transfer Group VI , Parameter Emitter-base capacitance Noise figure Symbol C ibo N Typ. Typ. Max. T BC846 BC847 BC848 BC849 -
OCR Scan

marking CODE 1BS

Abstract: BC846 Infineon -20-2002 BC846.BC850 Maximum Ratings Parameter Symbol BC846 BC847 BC848 BC850 Unit BC849 , - - BC848/849 30 - - BC846 80 - - BC847/850 50 - - BC848 , = 0 V V(BR)CES BC846 80 - - BC847/850 50 - - BC848/849 30 - - BC846/847 6 - - BC848-850 5 - - ICBO - - 15 nA ICBO - , 200 µA, VCE = 5 V, RS = 2 k , BC849 f = 1 kHz, BC850 f = 200 Hz Equivalent
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marking CODE 1BS BC846 Infineon BC846-BC850 NA MARKING SOT23 NPN BC846B SOT23 BC847b infineon

BC846 Infineon

Abstract: top marking 3c sot23 Value Unit V BC846. 65 BC847., BC850. 45 BC848., BC849. 30 Collector-emitter voltage VCES BC846. 80 BC847., BC850. 50 BC848., BC849. 30 Collector-base voltage VCBO BC846. 80 BC847., BC850. 50 BC848., BC849. 30 Emitter-base voltage VEBO BC846. 6 BC847., BC850. 6 BC848., BC849. 6 , ., BC850. 45 - - IC = 10 mA, IB = 0 , BC848., BC849. 30 - - IC = 10 µA, IE =
Infineon Technologies
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BC846BW top marking 3c sot23 bc847 infineon sot23 1bs sot323 marking 1F SOT323 BC847BF BC847BL3 BC847BW

BC8488

Abstract: BC850C INFINEON 100 200 200 200 330 150 -65 . 150 BC848 BC849 30 30 30 5 Unit V mA mA mW °C Junction , 25°C, unless otherwise specified. V 65 45 30 - BC846 BC847/850 BC848/849 Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846 BC847/850 BC848/849 V(BR)CBO 80 50 30 1For calculation of R , Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC846 BC847/850 BC848/849 Emitter-base , 450 800 hFE 140 250 480 ICBO 5 BC846/847 BC848-850 ICBO V(BR)EBO 6 5 15 V(BR)CES 80 50 30 typ. max
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BC8488 BC850C INFINEON

BC8488

Abstract: BC846 Nov-29-2001 BC846.BC850 Maximum Ratings Parameter Symbol BC846 BC847 BC848 , V(BR)CEO BC846 65 - - BC847/850 45 - - BC848/849 30 - - BC846 80 - - BC847/850 50 - - BC848/849 30 - - V(BR)CBO Collector-base , 50 - - BC848/849 30 - - BC846/847 6 - - BC848-850 5 - - , kHz, Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , f = 10 . 50 Hz 0.135
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1Bs SOT23 hFE Group EHP00368 EHP00369 EHP00370 EHP00371 EHP00372 EHP00373

BC8488

Abstract: H12E BC846W BC847/850W BC848/849W 105 Values typ. max. K/W Electrical Characteristics at TA = 25 , voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848/849W V(BR)CBO 80 50 30 1For calculation of R , Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC846W BC847/850W BC848/849W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO BC846/847W BC848-850W - 15 5 nA µA - Emitter-base , Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200
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H12E BC850W BC856W BC857W BC858W BC859W BC860W

BC8488

Abstract: BC846 -20-2002 BC846.BC850 Maximum Ratings Parameter Symbol BC846 BC847 BC848 BC850 Unit BC849 , - - BC848/849 30 - - BC846 80 - - BC847/850 50 - - BC848 , = 0 V V(BR)CES BC846 80 - - BC847/850 50 - - BC848/849 30 - - BC846/847 6 - - BC848-850 5 - - ICBO - - 15 nA ICBO - , 200 µA, VCE = 5 V, RS = 2 k , BC849 f = 1 kHz, BC850 f = 200 Hz Equivalent
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EHP00374

top marking 1B sot23

Abstract: top marking 3c sot23 . BC848., BC849. Collector-emitter voltage BC847., BC850. BC848., BC849. Collector-base voltage BC847., BC850. BC848., BC849. Emitter-base voltage BC847., BC850. BC848., BC849 , Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC847., BC850. IC = 10 mA, IB = 0 , BC848 , = 0 , BC847., BC850. IC = 10 µA, IE = 0 , BC848., BC849. 50 30 V(BR)EBO ICBO , . Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 . 50 Hz , BC850. Vn 0.135 µV F h22e 18
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1BC847BL3 top marking 1B sot23 BC847, 215 sot323 marking code A.C 2Cs sot23 Q1011 BC847CW BC848BL3

BC846AW

Abstract: BC846BW IC = 10 mA, IB = 0 V V(BR)CEO BC846W 65 - - BC847/850W 45 - - BC848/849W 30 - - BC846W 80 - - BC847/850W 50 - - BC848/849W 30 - , 80 - - BC847/850W 50 - - BC848/849W 30 - - BC846/847W 6 - - BC848-850W 5 - - ICBO - - 15 nA ICBO - - 5 µA Emitter-base , Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , f = 10 . 50 Hz Vn 4 4 0.135 µV
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VSO05561 BC846AW BC847AW BC848AW BC848BW BC848CW

BC846 Infineon

Abstract: BC847BL3 ., BC850. 45 BC848., BC849. 30 Collector-emitter voltage VCES BC846. 80 BC847., BC850. 50 BC848., BC849. 30 Collector-base voltage VCBO BC846. 80 BC847., BC850. 50 BC848., BC849. 30 Emitter-base voltage VEBO BC846. 6 BC847., BC850. 6 BC848., BC849. 6 Collector current IC 100 Peak collector , 0 , BC848., BC849. 30 - - IC = 10 µA, IE = 0 , BC846. 80 - - IC = 10
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base resistance for SOT23 BC 945 marking 2Gs marking 1Gs BC 945 p

transistors

Abstract: bc337 TRANSISTOR equivalent -16 / -25 / -40 BC817 -16 / -25 / -40 BC818 -16 / -25 / -40 BC846 A / B BC847 A / B / C BC848 A , / C BC848 A / B / C BC849 A / B / C BC850 A / B / C BC337 -16 / -25 / -40 BC338 -16 / -25 / -40 , niedrig hoch niedrig LF Four Pole Equivalent Circuit NF Vierpol-Ersatzschaltbild Low frequency , offenem Eingang (i1=0) www.diotec.com 2/4 03/2002 Application Applikation Equivalent , Signalgenerators Equivalent Noise voltage uF Äquivalente Rauschspannung www.diotec.com 4/4 03
Diotec
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transistors bc337 TRANSISTOR equivalent BC337 hie hre hfe EQUIVALENT TRANSISTOR bc547 bc547 sot 23 transistor BC547 equivalent BC807 BC808 BC327 BC328 BC546 BC547

1bs sot323

Abstract: BC857W V(BR)CEO BC846W 65 - - BC847/850W 45 - - BC848/849W 30 - - BC846W 80 - - BC847/850W 50 - - BC848/849W 30 - - Collector-base , BC847/850W 50 - - BC848/849W 30 - - BC846/847W 6 - - BC848-850W 5 , Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k , f = 10 . 50 Hz Vn 4 4 0.135 µV
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BC849CW BC849BW BC850BW BC850CW BC847W BC848W

sot323 marking code A.C

Abstract: MARKING CODE 21E SOT323 . Unit Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846W BC847/850W BC848/849W V(BR)CEO V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848 , = 10 µA, VBE = 0 BC846W BC847/850W BC848/849W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO BC846/847W BC848-850W - 15 5 nA µA - Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector , , VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k
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MARKING CODE 21E SOT323 marking 1Bs h11e BC849W BC848/849W

BC8488

Abstract: MARKING CODE 21E SOT323 . Unit Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846W BC847/850W BC848/849W V(BR)CEO V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848 , = 10 µA, VBE = 0 BC846W BC847/850W BC848/849W Unit max. V typ. V(BR)CES 80 50 30 V(BR)EBO BC846/847W BC848-850W - 15 5 nA µA - Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector , , VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k
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1B marking

Abstract: voltage BC846. BC847., BC850. BC848., BC849. Collector-emitter voltage BC846. BC847., BC850. BC848., BC849. Collector-base voltage BC846. BC847., BC850. BC848., BC849. Emitter-base voltage BC846. BC847., BC850. BC848., BC849. Collector current Peak collector current Total , . IC = 10 mA, IB = 0 , BC848., BC849. Unit V 65 45 30 V(BR)CBO - - , µA, IE = 0 , BC848., BC849. 80 50 30 V(BR)EBO ICBO 6 µA Emitter-base breakdown
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1B marking

MARKING CODE 21E SOT23

Abstract: BC847C E6433 Maximum Ratings Parameter Symbol BC846 BC847 BC848 BC850 Unit BC849 , BC848/849 30 - - BC846 80 - - BC847/850 50 - - BC848/849 IC = 10 , BC846 80 - - BC847/850 50 - - BC848/849 IC = 10 µA, VBE = 0 30 - - , IC = 200 µA, V CE = 5 V, RS = 2 k, BC849 f = 1 kHz, f = 200 Hz dB BC850 Equivalent
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MARKING CODE 21E SOT23 BC847C E6433 1FS SOT23 BC846B E6327 power 22E 1Gs SOT23 BCW66 E6327 E6433
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