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BC818K40E6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy
BC818K16WH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy

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BC818 Datasheet

Part Manufacturer Description PDF Type
BC818 AUK NPN Silicon Transistor (High current application Switching application) Original
BC818 Continental Device India Silicon Planar Epitaxial Transistors Original
BC818 Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BC818 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC818 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC818 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC818 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC818 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC818 Galaxy Semi-Conductor Holdings NPN General Purpose Amplifier Original
BC818 General Semiconductor Small Signal Transistors (NPN) Original
BC818 General Semiconductor General Purpose Bipolar Transistor, NPN, 25V, SOT-23, 3-Pin Original
BC818 Infineon Technologies NPN Silicon AF Transistors Original
BC818 Kexin NPN Silicon AF Transistors Original
BC818 Philips Semiconductors NPN GENERAL PURPOSE TRANSISTOR Original
BC818 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BC818 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BC818 Siemens Cross Reference Guide 1998 Original
BC818 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC818 TY Semiconductor TY Equivalent - NPN Silicon AF Transistors - SOT-23 Original
BC818 Zetex Semiconductors TRANS GP BJT NPN 45V 0.5A 3SOT23 Original
Showing first 20 results.

BC818

Catalog Datasheet MFG & Type PDF Document Tags

transistor 6Cp

Abstract: transistor 6bp -16 BC817-25 BC817-40 MARKING CODE 6Dp 6Ap 6Bp 6Cp TYPE NUMBER BC818 BC818-16 BC818-25 BC818-40 , current gain BC817; BC818 BC817-16; BC818-16 BC817-25; BC818-25 BC817-40; BC818-40 DC current gain , . VaE decreases by about 2 mV/K with increasing temperature. M 8H721 BC817-16; BC818-16 Fig , specification NPN general purpose transistors BC817; BC818 BC817-25; BC818-25 Fig.3 DC current gain; typical values. BC817-40; BC818-4Û Fig.4 DC current gain; typical values. 1997 Mar 12 302
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transistor 6Cp transistor 6bp bc817 6Bp 6Bp transistor marking 6ap marking 6CP BC807 BC808

8FC SOT23

Abstract: BC81716MTF BC817/BC818 tm NPN Epitaxial Silicon Transistor Features · Switching and Amplifier , otherwise noted Units 50 30 V V : BC817 : BC818 VCEO Value : BC817 : BC818 VCBO , Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage : BC817 : BC818 IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC817 : BC818 IC=0.1mA, VBE=0 BVEBO , * Pulse Test: Pulse Width300µs, Duty Cycle2% ©2006 Fairchild Semiconductor Corporation BC817/BC818
Fairchild Semiconductor
Original
8FC SOT23 BC81716MTF TRANSISTOR 8FB on 8gb transistor BC81740MTF transistor 8gb sot 23 BC817/BC818 BC807/

BC817-40 INFINEON

Abstract: 6AS SOT23 ) 2 1 VPS05161 Type BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 Maximum Ratings , BC817, BC818 NPN Silicon AF Transistors 3 For general AF applications High collector current , BC817 45 50 5 500 1 100 200 330 150 BC818 25 30 5 Unit V Collector-emitter voltage , Nov-29-2001 BC817, BC818 Electrical Characteristics at TA = 25°C, unless otherwise specified , 250 160 250 350 250 400 630 BC817 BC818 V(BR)CBO BC817 BC818 V(BR)EBO 50 30 5 - 60 100
Infineon Technologies
Original
BC817-40 INFINEON 6AS SOT23 Thermal CUTOFF

BC817-40

Abstract: 6as sot23 =E 3=C SOT23 BC818-16 6Es 1=B 2=E 3=C SOT23 BC818-25 6Fs 1=B 2=E 3=C SOT23 BC818-40 6Gs 1=B 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BC817 BC818 VCEO 45 25 , BC817, BC818 NPN Silicon AF Transistors 3 For general AF applications High , Thermal Resistance 1 Nov-29-2001 BC817, BC818 Electrical Characteristics at TA = 25°C, unless
Infineon Technologies
Original
EHP00218 EHP00220 EHP00221 EHP00222 EHP00223 EHP00224

transistor 6Cp

Abstract: 6Bp transistor NUMBER MARKING CODE BC817 6Dp BC818 6Ap BC818-16 6Bp BC818-25 6Fp BC817-40 6Cp BC818-40 MAM255 6Ep BC817-25 2 2 Top view 6Hp BC817-16 1 6Gp , 600 BC817-16; BC818-16 100 - 250 BC817-25; BC818-25 160 - 400 BC817-40; BC818-40 250 - 600 40 - - BC817; BC818 hFE DC current gain VCEsat , handbook, full pagewidth hFE 160 VCE = 1 V 120 80 40 0 10-1 1 10 BC817-16; BC818-16.
Philips Semiconductors
Original
6bp marking marking code 6Cp M3D088 SCA53

transistor 6Cp

Abstract: bc817 cut-off current DC current gain BC817; BC818 BC817-16; BC818-16 BC817-25; BC818-25 BC817-40; BC818-40 hFE , MARKING TYPE NUMBER BC817 BC817-16 BC817-25 BC817-40 MARKING CODE 6Dp 6Ap 6Bp 6Cp TYPE NUMBER BC818 BC818-16 BC818-25 BC818-40 MARKING CODE 6Hp 6Ep 6Fp 6Gp Fig. 1 Simplified outline (SOT23) and symbol. T o p V , DISCRETE SEMICONDUCTORS ©Æm ülnlEET BC817; BC818 NPN general purpose transistors Product , FEATURES · High current (max. 500 mA) · Low voltage (max. 45 V). BC817; BC818 PINNING PIN 1 2 base
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6Cp transistor General Purpose Transistors 6bp marking code TRANSISTOR marking ar code EC marking NPN bc817 philips
Abstract: BC817-16 BC818-16 MIN MAX 100 250 40 - pF BC817-25 BC818-25 MIN MAX 160 400 40 - BC817-40 BC818-40 MIN MAX 250 600 40 - R1 (11-November 2013) BC817 SERIES BC818 SERIES , BC817-25 6B BC817-40 BC818 6C 6E or 6F or 6G or 6H BC818-16 6E BC818-25 6F BC818-40 6G R1 (11-November 2013) w w w. c e n t r a l s e m i . c o m Central Semiconductor , BC817 SERIES BC818 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON NPN Central Semiconductor
Original
100MH

code marking 6Cp sot-23

Abstract: bc817 6Bp BC817-40 = 6Cp BC818 = 6Hp BC818-16 - 6Ep BC818-25 = 6Fp BC818-40 = 6Gp /-â =â ! 0.2® A B 1 .U 2.5 , 600 BC817-16 I BC818-16 ) hFE 100 to 250 BC817-25 1 BC818-25 j hFE 160 to 400 BC817-40 I BC818-40 i , 7110fl5b ooböms R^a HPHIN BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a , BC818 Collector-emitter voltage (Vg^ = 0) VCES max 50 30 V Collector-emitter voltage (open base , Philips Semiconductors. 71106EL QObÃMlB BC817 BC818 «RHIN I RATINGS Limiting values in accordance with
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code marking 6Cp sot-23 F1010Z marking 6Bp BC818 6HP sot23 1fe BC808R MBB012 Z96885
Abstract: Base, 2 = Emitter, 3 = Collector. Type Marking BC817-16 -25 -40 6A 6B 6C BC818-16 , BC817, BC818 Small Signal Transistors (NPN) _ FEATURES SOT-23 + NPN Silicon , Collector-Emitter Voltage BC817 BC818 V ces V ces 50 30 V V Collector-Emitter Voltage BC817 BC818 V ceo V ceo 45 25 V V Emitter-Base Voltage V ebo 5 V Collector Current , u c t o r BC817 THRU BC818 _ ELECTRICAL CHARACTERISTICS Ratings at 25 -
OCR Scan

transistor 6cs

Abstract: 6CS transistor - - SOT323 BC818-16W 6Es 1=B 2=E 3=C - - - SOT323 BC818K-16W* 6Es 1=B 2=E 3=C - - - SOT323 BC818-25 6Fs 1=B 2=E 3=C - - - SOT23 BC818K-25* 6Fs 1=B 2=E 3=C - - - SOT23 BC818-40 6Gs 1=B 2=E 3=C - - - SOT23 BC818K-40* 6Gs 1=B 2=E 3=C - - - SOT23 * Shrinked chip version 1 2006-09-29 , -65 . 150 Value BC817, BC818 215 BC817K, BC818K 70 BC817W / KW, BC818W / KW
Infineon Technologies
Original
BC817-25W BC817K-40 BC817K-40W transistor 6cs 6CS transistor marking 6CS 1B marking transistor marking 6Bs BC817K-16 BC817K-25 BC817K-25W BC817-40W

BC817

Abstract: bc818 DIL 23Ã33TM â¡â¡â¡â¡734 TD? â  BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G Pin configuration 1 = BASE 2= EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 PACKAGE , 100 mA; VCE = 1 V; BC817/BC818 1*FE 100 to 600 BC817-16 BC818-16 hFE 100 to 250 BC817-25 BC818-25 hFE 160 to 400 BC817-40 BC818-40 liFE 250 to 600 Transition frequency at f = 100 MHz lC = 10
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BCS18 DG735
Abstract: 1=B 2=E 3=C - - - SOT323 BC818-16W 6Es 1=B 2=E 3=C - - - SOT323 BC818-25 6Fs 1=B 2=E 3=C - - - SOT23 BC818-40 6Gs 1=B 2=E 3=C - - - SOT23 1 Package 2006-01-19 BC817./ BC818. Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V BC817. 45 BC818. 25 Collector-base voltage VCBO , BC817./ BC818. NPN Silicon AF Transistor â'¢ For general AF applications â'¢ High collector Infineon Technologies
Original
BC807W BC808W

BC817

Abstract: BC818 BC817/BC818 BC817/BC818 Switching and Amplifier Applications · Suitable for AF-Driver stages , noted Symbol VCES Value Units : BC817 : BC818 50 30 V V : BC817 : BC818 VCEO , Parameter Collector-Emitter Breakdown Voltage : BC817 : BC818 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC817 : BC818 Min. Typ. Max. IC=0.1mA, VBE=0 45 25 V V , 100 V V MHz 12 pF Rev. A1, June 2001 BC817/BC818 hFE Classification
Fairchild Semiconductor
Original
BC807/BC808

bc818

Abstract: BC818-16 BC818-25 BC818-40 SOT-23 Transistor(NPN) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg , CLASSIFICATION OF Rank Range Marking hFE (1) BC818-16 100-250 6E BC818-25 160-400 6F BC818-40 250-630 6G BC818-16 BC818-25 BC818-40 Typical Characteristics SOT-23 Transistor(NPN) -
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Original

BC817

Abstract: BC818 ; BC817-40L = 6C; BC818-16L = 6E; BC818-25L = 6F; BC818-40L = 6G ELECTRICAL CHARACTERISTICS (Ta " 25 , , VCE = 10 V) BC817-16L BC818-16L BC817-25L BC818-25L BC817-40L BC818-40L hFE 100 160 250 40 - 250 400 , 0.024 In. 99.5% alumina. DEVICE MARKING BC817-16L, -25L, -40L BC818-16L, -25L, -40L CASE 318-03, STYLE 6 , motorola sc MAXIMUM RATINGS XSTRS/R F 1EE D | b3b72SM QGflSaö3 T | Rating Symbol BC817 BC818 Unit , Collector-Emitter Breakdown Voltage BC817 Series BC818 Series V(8R)CEO 45 25 - - V Collector-Emitter Breakdown
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25L MARKING
Abstract: 23633^ o d o ü 7 3 h *ì g 7 â  BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 , > 40 100 to 600 BC817-16 BC818-16 hFE 100 to 250 BC817-25 BC818-25 hFE 160 to 400 BC817-40 BC818-40 hFE 250 to 600 fx > Cc typ. Transition frequency at f = 100 MHz -
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00QD735

transistors VISHAY

Abstract: BC807 ) 2 Type 6A 6B 6C BC818-16 -25 -40 Dimensions in inches and (millimeters) Marking , BC817, BC818 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors , Unit Collector-Emitter Voltage (base shorted) BC817 BC818 VCES 50 30 V Collector-Emitter Voltage (base open) BC817 BC818 VCEO 45 25 V VEBO 5 V IC 800 mA , BC817, BC818 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T
Vishay Semiconductors
Original
transistors VISHAY E8/10K
Abstract: BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 - 6C BC818 = 6H BC818-16 = 6E BC818-25 - 6F BC818-40 - 6G , ; Vcb =iov e 22 > Q BC818-40 250 to 600 fr BC817-40 160 to 400 hpE BC817-25 BC818-25 100 to 250 hpE BC817-16 BC818-16 > 40 100 to 600 typ. 100 MHz 5 pF , ICM â'˜Ptot Tj max. max. max. max. max. > BC817 50 45 BC818 30 V 25 V mA 1000 -
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BCS17/BC818

transistor 8gb sot 23

Abstract: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features â'¢ Switching and Amplifier , ° unless otherwise noted C Units 50 30 V V : BC817 : BC818 VCEO Value : BC817 : BC818 VCBO Parameter SOT-23 45 25 V V V Collector-Base Voltage Collector-Emitter , Voltage : BC817 : BC818 IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC817 : BC818 IC , Corporation BC817/BC818 Rev. B 1 www.fairchildsemi.com BC817/BC818 NPN Epitaxial Silicon
Fairchild Semiconductor
Original

bc817

Abstract: BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G 2.6 2.4 , Ic = 500 mA; Ig = 50 mA D.C. current gain IC = 500 mA; VcE = 1 V IC = 100 mA; VCE = 1 V; BC817/BC818 BC817-16 BC818-16 BC817-25 BC818-25 BC817-40 BC818-40 Transition frequency at f = 100 MHz Ic = 10 mA; V , BC818 30 V 25 V 10)0 mA mW 250 150 °C 100 M Hz 21 ii RATINGS (at Ta * 25°C unless otherwise
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BC817 INFINEON

Abstract: BC817-40 INFINEON BC817, BC818 NPN Silicon AF Transistors · For general AF applications · High collector current · , ) 3 2 1 VPS05161 Type BC817-16 BC817-25 BC817-40 BC818-25 BC818-40 Marking 6As 6Bs 6Cs 6Fs , Emitter-base voltage Symbol VCEO VCBO VEBO BC817 45 50 5 500 1 100 200 330 150 -65 . 150 215 BC818 25 30 , of R thJA please refer to Application Note Thermal Resistance 1 Feb-28-2005 BC817, BC818 , VCEsat hFE 60 100 170 0.7 hFE 100 160 250 160 250 350 250 400 630 IEBO 100 ICBO 50 ICBO 100 BC817 BC818 V
Infineon Technologies
Original
BC817 INFINEON 4 pin 817

BC817K-40 thermal resistance

Abstract: egs SOT23 BC817./ BC818. NPN Silicon AF Transistor · For general AF applications · High collector , -25 BC817K-25* BC817-25W BC817K-25W* BC817-40 BC817K-40* BC817-40W BC817K-40W* BC818-16W BC818K-16W* BC818-25 BC818K-25* BC818-40 BC818K-40* * Shrinked chip version 6As 6As 6Bs 6Bs 6Bs 6Bs 6Cs 6Cs 6Cs 6Cs 6Es 6Es , SOT23 SOT23 SOT23 SOT23 1 2006-09-29 BC817./ BC818. Maximum Ratings Parameter Collector-emitter voltage BC817. BC818. Collector-base voltage BC817. BC818. Emitter-base voltage Collector
Infineon Technologies
Original
BC817K-40 thermal resistance egs SOT23
Abstract: BC818 SILICON PLANAR EPITAXIAL TRANSISTORS Nâ'"Pâ'"N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PACKAGE , BC818 30 V 25 V 1000 mA 250 mW 150 °C 100 MHz Page 1 of 3 BC817 BC818 RATINGS (at , . BC817 50 45 5 max. THERMAL RESISTANCE From junction to ambient BC818 30 V 25 V 5 V , . current gain IC = 500 mA; VCE = 1 V IC = 100 mA; VCE = 1 V; BC817/BC818 ICB0 ICB0 < < 100 nA Continental Device India
Original
C-120

1B marking transistor marking 6Bs

Abstract: BC817W SOT23 BC817./BC818. NPN Silicon AF Transistor · For general AF applications · High collector current , -16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* BC817-40 BC817K-40* BC817-40W BC817K-40W* BC818-16W BC818K-16W* BC818-25 BC818K-25* BC818-40 BC818K-40* * Shrinked chip version 1Pb-containing Marking , be available upon special request 1 2007-05-18 BC817./BC818. Maximum Ratings Parameter Collector-emitter voltage BC817. BC818. Collector-base voltage BC817. BC818. Emitter-base voltage Collector
Infineon Technologies
Original
BC817W SOT23 105BC transistor 6bs 6fs sot23 marking 6bs BC817W/KW
Showing first 20 results.