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BC556 Datasheet

Part Manufacturer Description PDF Type
BC556 Boca Semiconductor PNP SILICON PLANAR EPITAXIAL TRANSISTORS Original
BC556 Diotec Si-Epitaxial PlanarTransistors Original
BC556 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BC556 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BC556 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original
BC556 Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 65V 100MA TO-92 Original
BC556 General Semiconductor General Purpose Bipolar Transistor, PNP, 65V, TO-92, 3-Pin Original
BC556 General Semiconductor Small Signal Transistors (PNP) Original
BC556 Micro Commercial Components PNP Silicon Amplifier Transistor 625mW Original
BC556 Motorola Amplifier Transistors Original
BC556 On Semiconductor Amplifier Transistor Original
BC556 On Semiconductor BC556 - TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN, BIP General Purpose Small Signal Original
BC556 Philips Semiconductors PNP general purpose transistors Original
BC556 Philips Semiconductors Small-signal Transistors Original
BC556 Siemens Cross Reference Guide 1998 Original
BC556 Sinyork Mini size of Discrete semiconductor elements Original
BC556 Vishay Small Signal Transistors (PNP) Original
BC556 Weitron PNP General Purpose Transistor Original
BC556 Continental Device India Semiconductor Device Data Book 1996 Scan
BC556 Crimson Semiconductor Transistor Selection Guide Scan
Showing first 20 results.

BC556

Catalog Datasheet MFG & Type PDF Document Tags

BC557

Abstract: bc558 CHARACTERISTICS DC current gain (VCE=-5V, lc=-2mA) BC556 BC557 BC558 BC556A/BC557A/BC558A BC556B/BC557B , BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 TO , Continuous VECO V CBO VEBO lC BC556 -65 -80 -5 BC557 -45 -50 -5 100 Unit Vdc Vdc Vdc , Dissipation Alumina Substrate, TA = 25 C BC556 BC557 BC558 Unit PD 625 mW/ C -55 to +150 C BC556 BC557 BC558 Junction and Storage, Temperature Max TJ, Tstg
Weitron
Original
BC557 TRANSISTOR BC558 PNP transistor CBC556 Transistor Bc556 TRANSISTOR BC558 BC557 PNP TRANSISTOR BC556A/BC557A/BC558A BC556B/BC557B/BC558B BC557C/BC558C 100MH 270TYP

Transistor NPN BC556

Abstract: BC557 SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , H VCBO -50 BC558 Collector-Emitter Voltage -30 BC556 -65 BC557 VCEO -45 BC558 Voltage BC557 VEBO -5 3 2. BASE V 3. EMITTER TO-92 V -5 BC556 -100 BC557 IC -100 BC558 mA -100 BC556 Emitter Current 2 1. COLLECTOR -5 BC558 Collector Current 1 -30 BC556 Emitter-Base F V C Voltage BC557 F L
KEC
Original
Transistor NPN BC556 BC557 SWITCHING TRANSISTOR npn bc557 of transistor bc558 BC557 SWITCHING APPLICATION TRANSISTOR BC557 application note BC556/7/8 BC546/547/548 BC546 BC547 BC548

BC557

Abstract: BC556 BC556A/BC557A/BC558A BC556B/BC557B/BC558B BC557C/BC558C Collector-emitter saturation voltage 800 , BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 * "G" , Collector Current Continuous VECO V CBO VEBO lC BC556 -65 -80 -5 BC557 -45 -50 -5 100 , Total Device Dissipation Alumina Substrate, TA = 25â"ƒ C BC556 BC557 BC558 Unit PD 625 mW/ â"ƒ C -55 to +150 â"ƒ C BC556 BC557 BC558 Junction and Storage, Temperature
Weitron
Original
BC558C

operation of BC557 TRANSISTOR

Abstract: TRANSISTOR C 557 B UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 ORDERING INFORMATION Normal BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K Ordering Number Lead Free Plating BC556L-x-T92-B BC556L-x-T92-K BC557L-x-T92-B BC557L-x-T92-K BC558L-x-T92-B BC558L-x-T92-K Halogen Free BC556G-x-T92-B BC556G-x-T92-K BC557G-x-T92-B BC557G-x-T92-K BC558G-x-T92-B
Unisonic Technologies
Original
operation of BC557 TRANSISTOR TRANSISTOR C 557 B transistor c 557 transistor 557 b free BC557 B 557 PNP TRANSISTOR BC556/557/558 BC556- BC557- BC558-

BC558

Abstract: BC558 pin BC556 thru BC558 Small Signal Transistors (PNP) TO-226AA (TO-92) Features · PNP Silicon , subdivided into three groups A, B, and C according to their current gain. The type BC556 is available in , . Symbol Value Unit Collector-Base Voltage BC556 BC557 BC558 ­VCBO 80 50 30 V Collector-Emitter Voltage BC556 BC557 BC558 ­VCES 80 50 30 V Collector-Emitter Voltage BC556 , leads are kept at ambient temperature at a distance of 2mm from case. 1/24/01 BC556 thru BC558
General Semiconductor
Original
BC558 pin bc558 pin configuration BC558 Transistors BC557 pin PNP BC558 pin configuration bc558

pin configuration pnp transistor BC557

Abstract: bc557 BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B , MCC Features omponents 20736 Marilla Street Chatsworth !"# $ % !"# BC556,B BC557,A,B , Unit V C Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 V V mA mW mW/oC W mW/oC , www.mccsemi.com Revision: 3 2004/07/26 BC556 thru BC558B ELECTRICAL CHARACTERISTICS (TA = 25°C unless , Breakdown Voltage (IC = ­2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO
Micro Commercial Components
Original
pin configuration pnp transistor BC557 pin configuration transistor BC557 pin configuration pnp transistor BC558 transistor IC 557B pin configuration transistor bc558 BC557/BC578

transistor BC557 base collector emitter

Abstract: BC557 SWITCHING TRANSISTOR SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , . N E K G J D ) SYMBOL BC556 Voltage BC557 VCBO -50 BC557 -45 BC558 Voltage 3 2. BASE V 3. EMITTER BC557 VEBO TO-92 -5 V -5 BC556 -100 BC557 IC -100 BC558 mA -100 BC556 Emitter Current 2 1. COLLECTOR -5 BC558 Collector Current 1 -30 BC556 Emitter-Base V -65 VCEO F F -30
KEC
Original
transistor BC557 base collector emitter of pnp transistor BC557 of bc557 transistor BC558 base collector emitter BC558 NPN Transistor transistor equivalent A BC557

BC549 input

Abstract: BC557 hie hre hfe BC556.BC559 nA BC556, BC559 A* i i / t . t / / y / / f / J / Test voltage equal , collector current mA BC556.BC559 V BC556.BC559 "fc 87 BC556 . BC559 , teac& are kept at ambient temperature at a distance of 2 mm from case mW 500 BC556.BC559 400 , BC556 . BC559 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier , . The type BC556 is available in groups A and B, however, the types BC557 and BC558 can be supplied in
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BC549 input BC557 hie hre hfe ITT Intermetall BC549

of transistor bc558

Abstract: Transistor NPN BC556 ST BC556 . BC559 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , . the type BC556 is available in groups A and B, however, the types BC557 and BC558 can be supplied in , Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit ST BC556 -VCBO 80 V ST BC557 -VCBO 50 V ST BC558, ST BC559 -VCBO 30 V ST BC556 -VCES 80 V ST BC557 -VCES 50 V ST BC558, ST BC559 -VCES 30 V ST BC556 -VCEO 65 V ST BC557
Semtech Electronics
Original
pin configuration npn transistor BC557 transistor BC549 hfe Transistor Bc557 npn STBC556 pnp bc559 transistor

BC557C

Abstract: transistor bc558 features µAdc, VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C , !"# BC556,B BC557,A,B,C BC558,B PNP Silicon Amplifier Transistor 625mW A Features Through , Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 V V mA mW mW/oC W mW/oC o D Emitter-Base , 2.64 NOTE www.mccsemi.com Revision: 7 1 of 5 2009/09/08 BC556 thru BC558B ELECTRICAL , Emitter Breakdown Voltage (IC = ­2.0 mAdc, IB = 0) BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO
Micro Commercial Components
Original
transistor bc558 features

Bc558

Abstract: BC557 SWITCHING APPLICATION TRANSISTOR SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , H VCBO -50 BC558 Collector-Emitter Voltage -30 BC556 -65 BC557 VCEO -45 BC558 Voltage BC557 VEBO -5 3 2. BASE V 3. EMITTER TO-92 V -5 BC556 -100 BC557 IC -100 BC558 mA -100 BC556 Emitter Current 2 1. COLLECTOR -5 BC558 Collector Current 1 -30 BC556 Emitter-Base F V C Voltage BC557 F L
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Original

BC557

Abstract: transistor BC557 base collector emitter BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC557A BC556B , CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC556/BC557/BC558 TRANSISTOR (PNP) TO-92 FEATURES High Voltage Complement to BC546 , Symbol Parameter Collector-Base Voltage VCBO VCEO VEBO Value BC556 BC557 BC558 , Collector-emitter breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 Emitter-base breakdown voltage
HAROM
Original
bc558 transistor transistor bc557 bc556 transistor bc557 to92 PNP Transistor BC557 BC556/BC557/BC558 BC546/BC547/BC548

transistor bc556

Abstract: transistor bc 558 application PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER · HIGH VOLTAGE: BC556, VCEO= -65V · LOW NOISE: BC559, BC560 · Complement to BC546 . BC 550 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol Collector-Base Capacitance : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector , Capacitance Noise Figure : BC556/557/558 : BC559/560 CCBO NF : BC559 : BC560 NF Test
Fairchild Semiconductor
Original
transistor bc 558 application transistor B 560 bc557 fairchild BC 557 PNP TRANSISTOR information of BC558 bc560 noise figure BC556/557/558/559/560 15000MH

BC557B-BULK

Abstract: BC557A-BULK per Ammopack 20 k/box Parts Table Part BC556A BC556B BC557A BC557B BC557C BC558A BC558B BC558C Ordering code BC556A-BULK or BC556A-TAP BC556B-BULK or BC556B-TAP BC557A-BULK or BC557A-TAP BC557B-BULK or , BC556 to BC558 Vishay Semiconductors Small Signal Transistors (PNP) Features · PNP Silicon , into three groups A, B, and C according to their current gain. The type BC556 is available in groups A , BC556 to BC558 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified
Vishay Semiconductors
Original
BC557B-TAP bc557cb BC546-BC548 bc556at bc546bc BC557C-BULK BC557C-TAP BC558A-BULK BC558A-TAP BC558B-BULK

BC557 SWITCHING TRANSISTOR

Abstract: BC557 SEMICONDUCTOR TECHNICAL DATA BC556/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC556 VcBO -80 V BC557 -50 BC558 -30 Collector-Emitter Voltage BC556 VcEO -65 V BC557 -45 BC558 -30 Emitter-Base Voltage BC556 Vebo -5 V BC557 -5 BC558 -5 Collector Current BC556 Ic -100 mA BC557 -100 BC558 -100 Emitter Current BC556 Ie 100 mA BC557 100 BC558 100 Collector Power
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BC557 TRANSISTOR application NPN transistor bc558 Scans-00124909

BC556

Abstract: BC557 BC556/557/558(PNP) TO-92 Bipolar Transistors 1. COLLECTOR 2. BASE 3. EMITTER TO , ) Symbol VCBO Parameter Collector-Base Voltage BC556 BC557 BC558 Value -80 -50 -30 -65 -45 -30 -5 -100 625 , specified) Parameter Collector-base breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 Symbol VCBO Test , breakdown voltage Collector cut-off current BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC557A BC556B/BC557B/BC558B BC557C Collector cut-off current ICEO -0.1 A
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ic 558 bc548 TO-92 BC557/transistor+cb+558+pnp

BC559

Abstract: pin configuration NPN transistor BC558 BC556.BC559 10 2 6 he (-IC) 4 he (-IC = 2 mA) 2 hie 10 6 4 2 hre 1 6 hfe , BC556 THRU BC559 Small Signal Transistors (PNP) TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6 , A, B and C according to their current gain. The type BC556 is available in groups A and B, however , otherwise specified Symbol Value Unit Collector-Base Voltage BC556 BC557 BC558, BC559 ­VCBO ­VCBO ­VCBO 80 50 30 V V V Collector-Emitter Voltage BC556 BC557 BC558, BC559
General Semiconductor
Original
pin configuration NPN transistor BC558 Amplifier with transistor bc549 BC549 NPN transistor download datasheet transistor BC559

Transistors

Abstract: BC5473 250 BC556B; BC557B 220 - 475 BC557C 420 - 800 BC556 VBE IC = -10 mA , hFE 200 VCE = -5 V 100 0 -10-1 -1 -10 -102 IC (mA) -103 BC556A. Fig , DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general , Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING , INFORMATION PACKAGE TYPE NUMBER NAME BC556 SC-43A DESCRIPTION VERSION plastic single-ended
NXP Semiconductors
Original
Transistors BC5473 BC547 NXP BC547 sot54 BC546 nxp BC557 pin description MAM281 R75/04/

transistor BC 458

Abstract: BC 458 transistor BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier · High Voltage: BC556 , noted Symbol VCBO Parameter Collector-Base Capacitance : BC556 : BC557/560 : BC558/559 VCEO Value -80 -50 -30 V V V -65 -45 -30 Collector-Emitter Voltage : BC556 : BC557/560 , : BC556/557/558 : BC559/560 : BC559 : BC560 mV mV mV mV -750 -800 VCB= -10V, IE=0, f , ©2000 Fairchild Semiconductor International Rev. A, February 2000 BC556/557/558/559/560
Fairchild Semiconductor
Original
transistor BC 458 BC 458 transistor bc546 fairchild

BC557

Abstract: BC557 transistor pin details BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features , Collector - Emitter Voltage Value VCEO Vdc VCBO Vdc â'80 â'50 â'30 BC556 BC557 BC558 Emitter - Base Voltage 3 EMITTER â'65 â'45 â'30 BC556 BC557 BC558 Collector - , section on page 6 of this data sheet. Publication Order Number: BC556B/D BC556B, BC557A, B, C , = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO
ON Semiconductor
Original
BC557 transistor pin details BC556B/D

transistor BC 667

Abstract: transistor BC 247 BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 * "G" , Collector Current Continuous VECO V CBO VEBO lC BC556 -65 -80 -5 BC557 -45 -50 -5 100 , Total Device Dissipation Alumina Substrate, TA = 25â"ƒ C BC556 BC557 BC558 Unit PD 625 mW/ â"ƒ C -55 to +150 â"ƒ C BC556 BC557 BC558 Junction and Storage, Temperature , . lB =0) BC556 BC557 BC558 Collector-Base Breakdown Voltage (lC = 100 mAdc. lE =0) BC556
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BC659 transistor BC 667 transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 BC556-BC560 BC5561 Q62702-C692 BC556VI Q62702-C692-V3 Q62702-C692-V1

bc 558 equivalent

Abstract: pnp transistor 9015 BC556 . BC 560 T-29-21 SIEMENS AKTIENGESELLSCHAF Maximum Ratings Parameter Symbol Values BC 556 , D 62351,05 DDMlblfl H S IE6 BC556 . BC 560 T- 29- 21 SIEMENS AKTIEN6ESELLSCHÂF , *1 505 « S I E G BC556 . BC 560 T- 29- 21 SIEMENS AKTIENGESELLSCHAF Electrical , BC556 . BC 560 T- 29- 21 SIEMENS AKTIENGESELLSCHAF Perm issible pulse load Aiwa = / ( íP , 023StjQS 0041b52 GTT H S I E G BC556 . BC 560 T -2 9 -2 1 SIEMENS AKTIENGESELLSCHAF C ollector-em
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2SA620 2SA823 2SA705 bc 558 equivalent pnp transistor 9015 transistor BC 557 BC 9015 transistor 2SA733 equivalent equivalent transistor 8550 2SA467 2SA578 2SA721 2SA494 2SA579 2SA723

equivalent transistor 8550

Abstract: 2sa1015 equivalent re R a ng e T J ' T stg S ym b o l v CEO v CBO Ve b o jC Pd BC556 -6 5 -8 0 BC557 -4 5 - 50 -5 .0 -1 , 'X 'C BC556,A,B BC557,A,B,C BC558B CASE 29-04, STYLE 17 TO-92 (T0-226AA) .5 E m it t e r TH , BC556 B C557 B C558 -8 0 -5 0 -3 0 v (BR)EBO BC556 BC557 B C558 -5 .0 -5 .0 -5 .0 ' CES B C556 BC557 - , CE = - 5 . 0 V) BC556 BC557 BC558 B C 5 5 6 A 5 57A BC556B 5 57 B 558B ilC = - 1 0 0 m A d c , V c e , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES BC556,A,B, BC557,A,B,C, BC558B ELEC TR IC A L CH A RA C
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2SA1026 2SA906 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor TRANSISTOR BC 327 PNP 8550 2SA853 2SA978 2SA1318 2SA854 2SA987 2SA1323

bc 339

Abstract: bc560 BC556 . BC559 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier , . The type BC556 is available in groups A and B, however, the types BC557 and BC558 can be supplied in , approx. 0.18 g Dimensions in mm Absolute Maximum Ratings Symbol Collector-Base Voltage BC556 BC557 BC558, BC559 BC556 BC557 BC558, BC559 BC556 BC557 BC558, BC559 "VCBO ~VCBO -VcBO ~VCES ~ V CES -V C E S , distance of 2 mm from case. 84 ITT INTERMETALL BC556 . BC559 Characteristics at Tamb = 25 °C
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bc 339 cbc560 ic 556 bc560c AMI siemens marking cd 556 Q62702-C692-V2 Q62702-C693 Q62702-C693-V1 Q62702-C693-V2 Q62702-C694 Q62702-C694-V1

C557B

Abstract: C556B SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE , . N E K G J D ) SYMBOL BC556 Voltage BC557 VCBO -50 BC557 -45 BC558 Voltage 3 2. BASE V 3. EMITTER BC557 VEBO TO-92 -5 V -5 BC556 -100 BC557 IC -100 BC558 mA -100 BC556 Emitter Current 2 1. COLLECTOR -5 BC558 Collector Current 1 -30 BC556 Emitter-Base V -65 VCEO F F -30
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OCR Scan
C557B C556B C558B c557 C556 C558

bc557

Abstract: BC557A Collector - Emitter Voltage Value VCEO Vdc VCBO Vdc â'80 â'50 â'30 BC556 BC557 BC558 Emitter - Base Voltage 3 EMITTER â'65 â'45 â'30 BC556 BC557 BC558 Collector - , = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON , = â'5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Output Capacitance (VCB = â'10 V, IC = 0, f
Motorola
Original
BC557 MOTOROLA transistor BC 557B bc556 motorola BC 557 PNP TRANSISTOR circuits BC556B MOTOROLA T2 BC558 TRANSISTOR BC556/D 226AA
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