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Part : BC550B Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : BC550BBU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 40,000 Best Price : $0.03 Price Each : $0.04
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Part : BC550BTA Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 130,000 Best Price : $0.03 Price Each : $0.04
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Part : BC550B A1 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 1,750 Best Price : £0.0150 Price Each : £0.0250
Part : BC550B A1 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 4,250 Best Price : £0.0150 Price Each : £0.03
Part : BC550B Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.0870 Price Each : £0.0870
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BC550B Datasheet

Part Manufacturer Description PDF Type
BC550B Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC550B Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 45V 100MA TO-92 Original
BC550B Motorola Low Noise Transistors Original
BC550B On Semiconductor Low Noise Transistor Original
BC550B Philips Semiconductors Small-signal Transistors Original
BC550B Various Russian Datasheets Transistor Original
BC550B Continental Device India Semiconductor Device Data Book 1996 Scan
BC550B Crimson Semiconductor Transistor Selection Guide Scan
BC550B Ferranti Semiconductors Quick Reference Guide 1985 Scan
BC550B Infineon Technologies TRANS GP BJT NPN 45V Scan
BC550B Motorola The European Selection Data Book 1976 Scan
BC550B Motorola European Master Selection Guide 1986 Scan
BC550B N/A Shortform Transistor Datasheet Guide Scan
BC550B N/A Transistor Shortform Datasheet & Cross References Scan
BC550B N/A Shortform Transistor PDF Datasheet Scan
BC550B N/A Catalog Scans - Shortform Datasheet Scan
BC550B N/A Shortform Transistor PDF Datasheet Scan
BC550B N/A Diode, Transistor, Thyristor Datasheets and more Scan
BC550B N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BC550B National Semiconductor PRO ELECTRON SERIES - JFET Scan
Showing first 20 results.

BC550B

Catalog Datasheet MFG & Type PDF Document Tags

BC549B

Abstract: BC550B Low Noise Transistors BC549B,C BC550B,C NPN Silicon MAXIMUM RATINGS Rating Symbol , mAdc, IB = 0) Collector­Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CEO BC549B,C BC550B,C Vdc V(BR)CBO BC549B,C BC550B,C Emitter­Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR , , LLC, 2001 February, 2001 ­ Rev. 1 1 Publication Order Number: BC549B/D BC549B,C BC550B,C , 1.0 kHz) hfe BC549B/BC550B BC549C/BC550C Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0
ON Semiconductor
Original
BC549 BC550 TRANSISTOR BC550B NPN Transistor BC549B 226AA
Abstract: Low Noise Transistors BC549B,C BC550B,C NPN Silicon MAXIMUM RATINGS Rating Symbol , = 0) V(BR)CEO BC549B,C BC550B,C Vdc V(BR)CBO BC549B,C BC550B,C Emitterâ'"Base , Publication Order Number: BC549B/D BC549B,C BC550B,C ELECTRICAL CHARACTERISTICS (TA = 25°C unless , kHz) hfe BC549B/BC550B BC549C/BC550C Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kâ , BC549B,C BC550B,C 1.0 VCE = 10 V TA = 25°C 1.5 0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = ON Semiconductor
Original

BC549B

Abstract: BC550 MOTOROLA NPN Silicon BC549B,C BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 , ) Collector ­ Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CEO BC549B,C BC550B,C Vdc V(BR)CBO BC549B,C BC550B,C Emitter ­ Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO , Device Data © Motorola, Inc. 1996 1 BC549B,C BC550B,C ELECTRICAL CHARACTERISTICS (TA = 25 , ) Small­Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe BC549B/BC550B BC549C/BC550C
Motorola
Original
BC550 MOTOROLA BC549C TRANSISTOR pin out of bc549c BC549C BC549B motorola

BC549B

Abstract: BC550B Transistors NPN Silicon BC549B,C BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 , ) Collector ­ Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CEO BC549B,C BC550B,C Vdc V(BR)CBO BC549B,C BC550B,C Emitter ­ Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO , Device Data © Motorola, Inc. 1996 1 BC549B,C BC550B,C ELECTRICAL CHARACTERISTICS (TA = 25 , ) Small­Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe BC549B/BC550B BC549C/BC550C
Motorola
Original

BC549B

Abstract: transistor BC 549 dC = 10 m Adc, Ib = 0) BC549B,C BC550B.C Collector-Base Breakdown Voltage dC = 10 iiA d c, l£ = 0) BC549B.C BC550B.C E m itte r-B a se B re a kd o w n V oltage (IE = 10 nAdc, lc " 0) C o lle c to r C u to , 'C PD pd BC549B,C BC550B,C BC 549 30 30 5 .0 100 BC 550 45 50 U n it Vdc Vdc Vdc m A dc , DIODES BC549B.C, BC550B,C ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherw ise , /BC550B BC549C/BC550C NF-] nf2 Symbol hfe Min 240 450 - Typ 330 600 0.6 - Max 500 900
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transistor BC 549 TRANSISTOR BC 550 b BC549B/BC550B

BC550

Abstract: BC550C TRANSISTOR Semiconductors Product specification NPN general purpose transistors BC549; BC550 BC549B; BC550B. , PARAMETER collector cut-off current emitter cut-off current DC current gain BC549B; BC550B BC549C; BC550C DC current gain BC549; BC550 BC549B; BC550B BC549C; BC550C CONDITIONS lE = 0; VCB = 30 V lE = 0
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BC550C TRANSISTOR BC549 NPN transistor bc550 PIN philips BC549B BC550 philips transistor bc549c BC559 BC560

bc549c

Abstract: BC550B,C ollector-E m itter Breakdown Voltage (IC = 10 mAdc, lB = 0) V(BR)CEO BC549B.C BC550B.C v (BR)CBO BC549B.C BC550B.C V(BR)EBO 30 50 5.0 - - - - - - Vdc 30 45 Vdc Vdc C ollector-B ase Breakdown Voltage (lc = , Transistors, FETs and Diodes Device Data BC549B.C BC550B.C ELECTRICAL CHARACTERISTICS (TA = 25°C unless , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon BC549B.C BC550B,C , - - MHz CC bo ^fe BC549B/BC550B BC549C/BC550C 2.5 pF 240 450 330 600 500 900
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BCS49 BC550B,C BC549BC BC549B,C

BC550 Philips

Abstract: BC550 ) 103 BC549B; BC550B. Fig.2 DC current gain; typical values. MBH725 600 handbook, full , hFE DC current gain BC549B; BC550B IE = 0; VCB = 30 V - - 15 nA IE = 0; VCB = 30 , current gain IC = 2 mA; VCE = 5 V; see Figs 2 and 3 200 - 800 BC549B; BC550B 200 290
Philips Semiconductors
Original
transistor bc549 BC550 equivalent bc550c w 49 bc549 equivalent bc550 bc560 BC560 pnp datasheet M3D186 MAM182 SCA54

C549B

Abstract: 549B n Voltage (IC = 10 m A dc, Iq = 0) BC549B,C BC550B.C C ollector-Base Breakdow n Voltage {IC = 10 fiA d c, l£ = 0) BC549B.C BC550B.C E m itte r Base B re a k d o w n V o lta g e (IE - 1 0 nA dc. Ic " 0 , C Sym bol VCEO VC BO vebo BC549B,C BC550B,C BC 549 30 30 5 0 100 625 5.0 1 .5 12 - 5 5 to + 1 5 , Adc, Vc e = 5.0 V, f = 1,0 kHz) BC549B/BC550B BC549C/ BC550C NF-) nf2 Symbol Mln 240 450 - _
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C549B 549B c550b T0-92 N0RMAL12E0

BC550

Abstract: BC549 Hz to 50 Hz;Tamb = 25 °C vn max. â'" BC549B BC550B 0,135 mV BC549C BC550C D.C. current gain IC= 10à , 1=1.53131 DDSTSbT Hbl IAPX Fig. 2 BC549B and BC550B; VCE = 5 V; T.- = 25 °C; typical values. Fig. 3
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BC549B equivalent BC550C equivalent bc550 noise figure TBC549 bub49 Amplifier with transistor bc549 QDE75 200MA NECC-C-002 S3131 0D27573 S3T31

BC550

Abstract: bc549 equivalent kS2 lc = 200 p A ; V CE = 5 V f = 1 0 H z t o 5 0 H z ; T amb = 25 °C BC549B BC550B D.C , , , A, Iq (m AJ 100 Fig. 2 BC549B and BC550B; V q e = 5 V; Tj = 25 °C ; typical values. 0,01
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MBB012 0D27S71 DD27573

bc549 equivalent

Abstract: BC550 3 dB typ. 1,2 1 dB < 4 4 dB max. 0,135 mV BC549B BC550B BC549C BC550C hFE typ. 150 270 > 200 420 , â PHIN" Fig. 2 BC549B and BC550B; VCg = 5 V; Tj = 25 °C; typical values. 600 hFE 400 200 7Z67501,1
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BC549 philips semiconductors bc549c equivalent IEC 292-1 silicon planar epitaxial transistors BC550 philips semiconductors T-29-21 0Q42Q34
Abstract: Switching Low Noise Transistors Part No. BC549A BC549B BC549C BC550A BC550B BC550C BC559A BC559B BC559C BC560A BC560B BC560C Polarity NPN PNP VCEO (V) 30 30 30 45 45 45 -30 -30 -30 -45 -45 -45 IC (mA) 100 100 100 100 100 100 -100 -100 -100 -100 -100 -100 fT NF @ VCE & IC Typ. Typ. (MHz) (dB) 300 1.4 300 1.4 300 1.4 300 1.4 300 1.4 300 1.4 150 1.2 150 1.2 150 1.2 150 1.2 150 1.2 150 1.2 Max (dB) 4 4 4 10 10 10 Taitron Components
Original

bc550

Abstract: bc550 noise figure Click on a product for detailed qualification data Product BC550 BC550ABU BC550ATA BC550B BC550BBU BC550BTA BC550BTAR BC550BU BC550CBU BC550CTA back to top © 2007 Fairchild Semiconductor Products , Code) &3 (3-Digit Date Code) Line 2: BC Line 3: 550B Line 1: BC550 Line 2: B Line 3: -&3 BC550B Full Production $0.0473 TO-92 3 BULK BC550BBU Full Production $0.0238 TO-92 3 BULK BC550BTA Full Production $0.0238 TO-92 3 AMMO Line 1: BC550 Line 2: B
Fairchild Semiconductor
Original
transistor BC 548 Data BC548 npn transistor NPN 548 transistor bc 548 npn bc550 transistor BC546/547/548/549/550 BC546 BC556 BC547/550 BC548/549 BC546/547

bc546c

Abstract: 0.015 30 240 800 110 BC550B 50 45 5 0.625 0.1 0.015 30 200 50 45
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bc546c BC546C BC547B BC547A BC547 23633T4 BC637-10

BC108A

Abstract: BC107A BC550B BC550C BCY59A BCY59B BCY59C BCY59D 2N930 ZTX303 BC183 BC184 ZTX302 ZTX301 BCY58A BCY58B BCY58C
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BC107A BC548C BC108A BC108b BC546A BC546B ZTX304 BCY65EA BC182

mw 772

Abstract: BC549B -92 45 100 500 220 475 100 BC550B 275 BC560C TO-92 45 100 500 420
Philips Semiconductors
Original
ED1402 ED1402A ED1702N JC501 JA101P JC501P mw 772 TO-92 transistor bcy70 BCY70 BCY71 ED1602 ED1602A

MPSA18 BC550

Abstract: BC459C 2.5 250 CBE BC550B BC560B 45 625 100 150 180 460 8 12 0.6 2.5 250 CBE BC550C BC560C 45 625 100 270
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BC239 BC309 BC413 BC459C BC650C BC651C MPSA18 BC550 bc459 BC414 MOTOROLA 2N4125 EBC BC415 BC414 BC416

BC546A

Abstract: BC547A A1/A1G BC549B A1/A1G BC549C A1/A1G BC550A A1/A1G BC550B A1/A1G BC550C A1/A1G Packing 4k/ box 4k/ box
Taiwan Semiconductor
Original
BC548A CBC546A transistor bc548b BC547C A1 NPN transistor to-92 NPN Transistor BC548B BC546-A/B/C BC547-A/B/C BC548-A/B/C BC549-A/B/C BC550-A/B/C DO-92

bc548 TO-92

Abstract: ED1502C 200 800 100 BC560 266 BC550B TO-92 45 100 500 200 450 100
Philips Semiconductors
Original
BC558A ED1502C ED1502D ED1502E JC337 bc548 TO-92 bc558c BC549 TO-92 jc33725 BC557A BC557B BC547C BC557C BC548 BC558

BC550

Abstract: ic 548 PARAMETER collector cut-off current emitter cut-off current DC current gain BC549B; BC550B BC549C; BC550C DC current gain BC549; BC550 BC549B; BC550B BC549C; BC550C CONDITIONS lE = 0; VCB = 30 V lE = 0 , Semiconductors Product specification NPN general purpose transistors BC549; BC550 BC549B; BC550B
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ic 548 C 548 B CBC549 transistors BC 548 BC 558 bc557 bc548b Q62702-C687 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V1 Q62702-C688-V2

C 548 B

Abstract: B549C kS2 lc = 200 p A ; V CE = 5 V f = 1 0 H z t o 5 0 H z ; T amb = 25 °C BC549B BC550B D.C , , , A, Iq (m AJ 100 Fig. 2 BC549B and BC550B; V q e = 5 V; Tj = 25 °C ; typical values. 0,01
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BC650 B549C C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B Q62702-C687-V3 Q62702-C688-V3 Q62702-C689 Q62702-C689-V4 Q62702-C689-V1 Q62702-C689-V2

KT 819 transistor

Abstract: 2N2222A 338 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon BC549B.C BC550B,C COLLECTOR 1 2 BASE" 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B ase Voltage E m itter-B ase Voltage Collector Current - Continuous Total Device Dissipation @ Derate above 25°C = 25°C Symbol v CEO v CBO vebo BCS49 30 30 5.0 100 625 5.0 1.5 12 BC550 45 50 , - - MHz CC bo ^fe BC549B/BC550B BC549C/BC550C 2.5 pF 240 450 330 600 500 900
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KT 819 transistor 2N2222A 338 SF129D SF137D SSY20B KT819W 400MH

transistor 2sc 548

Abstract: equivalent transistor bc 649 BASE 3 EMITTER BC549B,C BC550B,C MAXIMUM RATINGS Rating Collector ­ Emitter Voltage Collector ­ , = 30 V, IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO BC549B,C BC550B,C V(BR)CBO BC549B,C BC550B,C V(BR)EBO ICBO - - IEBO - - - - 15 5.0 15 nAdc µAdc nAdc 30 50 5.0 , and Diodes Device Data BC549B,C BC550B,C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , kHz) BC549B/BC550B BC549C/BC550C NF1 NF2 fT Ccbo hfe 240 450 - - 330 600 0.6 - 500 900 dB 2.5 10 -
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BC5481 transistor 2sc 548 equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 BC5461 Q62702-C689-V3 Q62702-C690 Q62702-C690-V1 Q62702-C690-V2

EQUIVALENT TRANSISTOR bc549c

Abstract: BC550 equivalent table 3 dB typ. 1,2 1 dB < 4 4 dB max. 0,135 mV BC549B BC550B BC549C BC550C hFE typ. 150 270 > 200 420 , â PHIN" Fig. 2 BC549B and BC550B; VCg = 5 V; Tj = 25 °C; typical values. 600 hFE 400 200 7Z67501,1
ON Semiconductor
Original
EQUIVALENT TRANSISTOR bc549c BC550 equivalent table BC549 CONNECTION
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