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TLV2374-W Texas Instruments 550-uA/Channel 3-MHz RRIO Op Amp 0-WAFERSALE visit Texas Instruments
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Part : BC549C Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 17,286 Best Price : $0.03 Price Each : $0.0820
Part : BC549CTA Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1,164 Best Price : $0.03 Price Each : $0.1830
Part : BC549BTA Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 965 Best Price : £0.0287 Price Each : £0.0756
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BC549/550

Catalog Datasheet MFG & Type PDF Document Tags

TBC549C

Abstract: TBC550 BC549/550 AMPLIFIERS. Low Noise : 4dB Max. 3dB Max. (TBC549) (TBC550) SILICON NPN EPITAXIAL TYPE PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO Unit in mm 5.1 MAX. High VcEO : 30V (TBC549) 45V (TBC550) 0.45 0.55MAX. 0.4 5 High hFE : 200-800 1.27 1.27 MAXIMUM RATINGS , BC549/550 ELECTRICAL CHARACTERISTICS (Ta-25'0 CHARACTERISTIC Collector Cut-off Current Emitter , =2kn, f-lkHz V c e = 5V, Ic=0.2mA Rg=2kn, f=10~50Hz BC549/550 COLLECTOR CURRENT Ic (m A) Ic
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TBC549-C TBC550-C TBC549C TBC550C TBC549B TBC550B bc549 noise figure BC549/550 SC-43 TBC549-B TBC550-B

BC54B

Abstract: bc547 equivalent Boise Figure BC546,547»548 BC549,550 Noise Figure BC549 only BC550 only fT 250 Cob NF 2.7 4.5 , =2Ka f=10Hz-50Hz '' Flicker Noise Voltage Referred to Base En BC549»550 only : v CCo*i55: jiY , BC 5 4 6 through BC 550 MÜ NPN SILICON AF SMALL SIGNAL TRANSISTORS THE BC546 THROUGH , DIRECT COUPLED*CIRCUITS. THEY ARE COMPLEMENTARY TO BC556 THROUGH BC560. THE BC549, BC550 ARE , 5OOC BC549 50V 50V 50V 5V BC550 50V 50V 45V 5V Operating Junction & Storage Temperature Tj, Tstg
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T0-92F BC54B bc547 equivalent bc546 equivalent bc549 equivalent bc556 equivalent BC550 equivalent BC547 BC548 BC54-9

bc54b

Abstract: EQUIVALENT TRANSISTOR bc547 dB IC=0.2mA VCE=5V Rq=2Kìi f=lkHz Af=200Hz Jtk BC549,550 1.4 4 dB Noise Figure BC549 only NF 1.2 , Referred to Base BC549,550 only In 35: jiY Iq=0,2mA VCE=5V RG»2K£1 f=10Hz-505z FLICKER NOISE MEASUREMENT , BC 546 through BC 550 NPN SILICON AF SMALL SIGNAL TRANSISTORS THE BC546 THROUGH BC550 ARE NPN , *CIRCUITS. THEY ARE COMPLEMENTARY TO BC556 THROUGH BC560. THE BC549, BC550 ARE CHARACTERIZESâ'žBY LOW NOISE FIGURE. CASE T0-92F CEB ABSOLUTE MAXIMUM RATINGS BC546 BC547 BC548 BC549 BC550 Collector-Base
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EQUIVALENT TRANSISTOR bc547 BC541 bc548 equivalent Transistor Bc54 BC241 HE bc548
Abstract: BC549B/550B BC549C/550C BC549/550 IC=10mA, IB=0.5mA IC=10mA, IB=See Note (1) *IC=100mA, IB=5mA IC , =0, f=1MHz Collector Base Capacitance hfe IC=2mA, VCE=5V, f=1KHz Small Signal Current BC549/550 , BC549,A.B,C BC550,A,B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead , 45 50 BC549 30 30 5.0 100 625 UNITS V V V mA mW 5.0 1.5 mW/ºC W 12 mW , SYMBOL VCEO TEST CONDITION IC=1mA, IB=0 MIN 30 45 V V VCBO BC549 BC550 IC=100µA Continental Device India
Original
081205E C-120

CBC550

Abstract: BC549 /550B BC549C/550C BC549/550 IC=10mA, IB=0.5mA IC=10mA, IB=See Note (1) *IC=100mA, IB=5mA IC , =0, f=1MHz Collector Base Capacitance hfe IC=2mA, VCE=5V, f=1KHz Small Signal Current BC549/550 , BC549,A.B,C BC550,A,B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead , Junction to Case Junction to Ambient in free air SYMBOL VCEO VCBO VEBO IC PD BC549 30 30 5.0 , TEST CONDITION IC=1mA, IB=0 MIN 30 45 V V VCBO BC549 BC550 IC=100µA, IE=0 Emitter
Continental Device India
Original
CBC550 BC549 TO-92 pin configuration NPN transistor BC550 K/BC549

BC549

Abstract: bc550 SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURE ·For Complementary with PNP Type BC559/560. BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25) CHARACTERISTIC BC549 Collector-Base Voltage BC550 BC549 Collector-Emitter Voltage BC550 Emitter-Base Voltage Collector , Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance BC549 Noise Figure BC550 Note : hFE Classification A:110220, B:200450, NF BC549 V(BR)CEO BC550 BC549 V(BR)CBO
KEC
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Amplifier with transistor BC549 transistor BC550 transistor BC549 transistor BC549 hfe bc550 noise figure BC549 NPN transistor 100MH

Amplifier with transistor bc549

Abstract: BC550 SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE , MAXIMUM RATING (Ta=25 G ) J D SYMBOL 30 VCBO Collector-Base Voltage BC550 BC549 , Temperature 2 mA Collector Power Dissipation 1 C BC549 RATING MILLIMETERS 4.70 MAX , =25 ) CHARACTERISTIC SYMBOL Collector-Emitter BC549 Breakdown Voltage BC550 Collector-Base BC549 , BC549 Noise Figure NF BC550 Note : hFE Classification A:110 1999. 11. 30 220, B:200 450
KEC
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BC549 DATASHEET LBC550 pnp bc559 transistor CBC549 BC549 TRANSISTOR BC549 NPN transistor download datasheet

BC549 NPN transistor

Abstract: BC550 1 K El L SFMTCONDITCTOR BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR KOREA ELECTRONICS CO.,LTD , RATING UNIT Collector-Base Voltage BC549 VcBO 30 V BC550 50 Collector- Emitter Voltage BC549 VcEO , =25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage BC549 V(br)CE0 Ic=10mA, IB=0 30 - - V BC550 45 - - Collector-Base Breakdown Voltage BC549 V(br)CB0 Ic=10j/A, IE=0 30 - , - - 4.5 pF Noise Figure BC549 NF Ic=200juA, Vce=5V Rg=10kÃ, f=lkHz - - 4.0 dB BC550 - - 10
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Abstract: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE , ) BC549 Collector-Base Voltage 30 VCBO BC550 BC549 Collector-Emitter Voltage RATING , ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter BC549 Breakdown Voltage BC550 Collector-Base BC549 Breakdown Voltage BC550 TEST CONDITION MIN. TYP , BC549 BC550 A:110 220, NF B:200 450, Revision No : 2 , f=1kHz dB C:420 800 1/1 KEC
Original

BC550

Abstract: Amplifier with transistor BC549 KEC SEMICONDUCTOR BC549/550 m TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE , =25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC549 VcBO 30 V BC550 50 Collector- Emitter Voltage BC549 VcEO 30 V BC550 45 Emitter-Base Voltage Vebo 5 V Collector Current Ic 100 mA , . MAX. UNIT Collector-Emitter Breakdown Voltage BC549 V(BR)CEO Ic-lOmA, Ib-0 30 - - V BC550 45 - - Collector-Base Breakdown Voltage BC549 V(BR)CBO Ic=10juA, IE=0 30 - - V BC550 50 - - Emitter-Base Breakdown
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C420-800

transistor C 548 B

Abstract: transistor c 548 VEB= =0.5V, f =1 MHz 9 PF Noise Figure : BC546/547/548 NF Vce= =5V, lc= 200nA 2 10 dB : BC549/550 , BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER « HIGH VOLTAGE: BC546, VCeo=65V « LOW NOISE: BC549, BC550 â'¢ Complement to BC556 . BC560 ABSOLUTE MAXIMUM , : BC547/550 50 V : BC548/549 30 V Collector-Emitter Voltage VcEO : BC546 65 V : BC547/550 45 V : BC548/549/550 30 V Emitter-Base Voltage Vebo V : BC546/547 6 V : BC548/549/550 5 V Collector
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transistor C 548 B transistor c 548 bc548 transistor 547 TRANSISTOR transistor b 548 bc546 fairchild BC546/547/548/549/550 BC547/550 BC548/549/550 50JJA

transistor vc 548

Abstract: 547 transistor 1MHz 9 PF Noise Figure :BC546/547/548 NF VCe = 5V, lc =200^A, 2 10 dB :BC549/550 f=1 KHz Rg , BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER â'¢ HIGH VOLTAGE: BC546, VCEO=65V â'¢ LOW NOISE: BC549, BC550 â'¢ Complement to BC556 . BC 560 ABSOLUTE , V BC547/550 50 V BC548/549 30 V Collector Emitter Voltage VceO BC546 65 V BC547/550 45 V BC548/549 30 V Emitter-Base Voltage Vebo V BC546/547 6 V BC548/549/550 5 V
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transistor vc 548 BC546.547 transistor NPN 548 transistor C 547 transistor c 548 c TRANSISTOR BC 550 b

CB 548 transistor

Abstract: transistor C 548 B Capacitance Noise Figure : BC546/547/548 C cB O Ic B O h FE C ebo NF : BC549/550 : BC549 , NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER â'¢ HIGH VOLTAGE: BC546, VCeo=65V â'¢ LOW NOISE: BC549, BC550 â'¢ Complement to BC556 . BC560 TO , 65 45 30 Collector Base Voltage : BC546 : BC547/550 : BC548/549 Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549/550 Emitter-Base Voltage : BC546/547 : BC548/549/550 Collector
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CB 548 transistor 15000MH
Abstract: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1 - -
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bc109

Abstract: bc549 Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS LOW-NOISE TRANSISTORS OVERVIEW leaded TO -18 BC109 BCY57 TO-92 BC549/550 2N5088 SOT23 BC849/850 BCF32/33 BCF81 PMBT5088/89 surface-mount SOT323 Small-signal transistors NPN PMST5088/89 BC849W/850W PNP 2N5087 BC559 BC859/860 BCF29/30 BC859W/860W 4-17
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BC109 sot23 BCF32 BC549 sot23 BC849 BC109 TO-92

c550b

Abstract: c550 SEMICONDUCTOR T E C H N I C A L DATA LOW N O ISE A M PL IFIE R APPLIC ATIO N. BC549/550 E P I , RATING (Ta=25°C) C H A R A C T E R IS T IC BC549 C ollcctor-B asc V oltage B C550 BC549 C o llector-E m , oise Fig rc B C 550 N ote : h FE C lassi ication A: 110 -220, B :2 0 0 - 450, NF Rg= 10k Q , = lk H C , M A X. - UN IT B C 550 B C 549 V (B R )C B O lc =10/iA , IE=0 w yß 50 5.0 110 0.55 - V - V - B C 550 V (B R )E B O IC B O I E= 10/iA , Ic =0 V CB= 30V , Ii;=0 Ic = 2m A , V ce
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c550b c550

transistor C 548 B

Abstract: transistor c 548 Capacitance Emitter Base Capacitance Noise Figure :B C 546/547/548 :BC549/550 :BC549 :BC550 Cebo , NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER â'¢ HIGH VOLTAGE: BC546, VO o =65V E â'¢ LOW NOISE: BC549, BC550 â'¢ Complement to BCS56 . BC 560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Symbol Characteristic Collector Base Voltage :BC546 :BC 547/550 :BC 548/549 Collector Emitter Voltage :BC546 :BC 547/550 :BC548/549 Emitter-Base Voltage :BC546/547
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TR BC 548

transistor c 548

Abstract: transistor C 548 B /547/548 :BC549/550 :BC549 :BC550 NF Sym b o l IcBO h FE T est C o n d itio n s M in Typ M , BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V · L O W NOISE: BC549, B C5S0 · Complement to BC556 . B C 560 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS < TA =25t) C h aracte ristic Collector Base Voltage .BC546 :BC547/550 :BC548/549 Collector-Emltter Voltage BC546 BC547/550 BC548/549/550 Emitter-Base Voltage :BC546/547 :BC548/549/550 Collector
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transistor 547 b transistor C 547 c C 547 B C 547 transistor C 547 C TRANSISTOR c 547 B 30-15000MH

BC560

Abstract: bc559 SEMICONDUCTOR TECHNICAL DATA LOW NOISE APPLICATION. FEATURE ·For Complementary with NPN Type BC549/550. B BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR C A N MAXIMUM RATING (Ta=25) CHARACTERISTIC BC559 Collector-Base Voltage BC560 BC559 Collector-Emitter Voltage BC560 Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VEBO IC PC Tj Tstg VCEO -45 L K D E G SYMBOL VCBO RATING -30 UNIT V -50 F H F -30 V 1 2 3
KEC
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TRANSISTOR bc560 transistor BC559

BC649

Abstract: BC550 MOTOROLA ) BC549A/550A BC549B/550B BC549C/550C BC549/550 hFE 100 100 110 200 420 110 150 270 290 500 220 450 800 800 , MOTOROLA SC XSTRS/R F 12 E D MAXIMUM RATINGS Rating Symbol BC 549 BC 550 Unit Collector-Emitter , Ambient RflJA 200 °c/w I b3b?aS4 GOÃ"5flbb T I : ir-JLÃ-Ã'! BC549, A, B, c BC550, A, B, C CASE 29-04 , Breakdown Voltage (Ic = 10 mAdc, IB = 0) BC549 BC550 V(BR)CEO 30 45 Vdc Collector-Base Breakdown Voltage dC= lOpAdc, lE = 0) BC549 BC550 V(BR)CBO 30 50 Vdc Emitter-Base Breakdown Voltage (IE = 10 (lAdc
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VQE-10 BC649 BC550 MOTOROLA bc649c ic 2113 bc550 transistor

BC549 input

Abstract: JC549 fci^E D fT hfe F F lc = 2mA;VCE = 5 V Note For characteristics graphs, see BC549/550, Figs 2 to 19
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JC549 JC550 JC549B JC549C JC550B JC550C BC549 input NECC-C-002 200/L

transistor bc549

Abstract: bc556 transistor : BC546/547/548 : BC549/550 : BC549 : BC550 Units nA 2 1.2 1.4 1.4 MHz 6 pF 10 4
Fairchild Semiconductor
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bc556 transistor CBC546 Transistor BC546/547/548/549/550 transistor bc547 transistor 548

transistor bc546

Abstract: bc546 fairchild Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549
Fairchild Semiconductor
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transistor bc546 data of transistor 547 Amplifier with transistor BC548 transistor bc547 specifications BC546..547 information of BC548
Abstract: 800 Note For characteristics graphs, see BC549/550, Figs 2 to 19. -
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BC547

Abstract: transistor bc547 specifications Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC
Fairchild Semiconductor
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BC547ATA BC547C transistor bc547 applications bc547 marking transistor information of BC547 Use of BC547 transistor transistor BC 547B transistor BC 458 BC547TF BC547TFR BC547A BC547ABU BC547ATAR
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