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BC33725 Datasheet

Part Manufacturer Description PDF Type
BC337-25 Diotec Si-Epitaxial PlanarTransistors Original
BC33725 Fairchild Semiconductor 25 - NPN General Purpose Amplifier Original
BC33725 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC337-25 Fairchild Semiconductor NPN General Purpose Amplifier Original
BC337-25 Fairchild Semiconductor NPN General Purpose Amplifier Original
BC337-25 General Semiconductor Small Signal Transistor (NPN) Original
BC337-25 General Semiconductor General Purpose Bipolar Transistor, NPN, 45V, TO-92, 3-Pin Original
BC33725 Korea Electronics TRANS GP BJT NPN 45V 0.8A 3TO-92 Original
BC337-25 NXP Semiconductors BC337-25 - 45 V, 500 mA NPN general-purpose transistors - Complement: BC327-25 ; fT min: 100 MHz; hFE max: 400 ; hFE min: 160 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 625 mW; VCEO max: 45 V Original
BC337-25 On Semiconductor Amplifier Transistors NPN SILICON Original
BC337-25 On Semiconductor Amplifier Transistors(NPN Silicon) Original
BC337-25 On Semiconductor Amplifier Transistors Original
BC337-25 Philips Semiconductors NPN General Purpose Transistor Original
BC337-25 Philips Semiconductors Small-signal Transistors Original
BC337-25 Siemens NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Original
BC337-25 STMicroelectronics SMALL SIGNAL NPN TRANSISTORS Original
BC337-25 STMicroelectronics SMALL SIGNAL NPN TRANSISTORS Original
BC337-25 Vishay Telefunken TRANS GP BJT NPN 45V 0.8A 3TO-92 Original
BC337-25 Continental Device India Semiconductor Device Data Book 1996 Scan
BC337-25 Crimson Semiconductor Transistor Selection Guide Scan
Showing first 20 results.

BC33725

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BC337-25 BC337-40 ® SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC337-25 BC337-25 TO-92 / Bulk BC337-25-AP BC337-25 TO-92 / Ammopack , Temperature 1 A 625 mW -65 to 150 o C 150 o C 1/5 BC337-25 / BC337 , Voltage I C = 500 mA V CE = 1 V 1.2 V h FE DC Current Gain I C = 100 mA for BC337-25 , BC337-25 / BC337-40 TO-92 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP STMicroelectronics
Original
BC337-40-AP BC327-25 BC327-40 bc33740
Abstract: BC337ZL1 BC337-16 BC337-16RL1 BC337-16ZL1 BC337-25 BC337-25RL1 BC337-25ZL1 BC337-25ZL1G BC337-40 BC337 , BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http://onsemi.com , BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , ) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/BC338 , 100 Figure 1. Thermal Response http://onsemi.com 2 BC337, BC337-16, BC337-25, BC337 ON Semiconductor
Original
bc337 pin out diagram BC337 figure BC337 pin out BC337 typical application bc33716 BC-337-16 BC338 BC337/D
Abstract: BC337-25 BC337-40 ® SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type BC337-25 s s BC337-25 BC337-40 s Marking BC337-40 SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO , Junction Temperature 1 A 625 mW -65 to 150 o C 150 o C 1/4 BC337-25 , h FE DC Current Gain I C = 100 mA for BC337-25 for BC337-40 V (BR)CBO fT C CBO , V f = 1 MHz 400 600 100 MHz 5 pF BC337-25 / BC337-40 TO-92 MECHANICAL DATA STMicroelectronics
Original
BC337-40 t d bc337 40 BC337-40 TO92 BC337 NPN transistor datasheet bc337 25 st bc337
Abstract: -16 BC337-16RL1 BC337-16ZL1 BC337-25 BC337-25RL1 BC337-25ZL1 BC337-40 BC337-40RL1 BC337-40ZL1 BC338 , BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http://onsemi.com , , BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/BC338-25 BC337-40 100 100 160 250 60 , Figure 1. Thermal Response http://onsemi.com 2 BC337, BC337-16, BC337-25, BC337-40, BC338 ON Semiconductor
Original
bc33
Abstract: BC337-25 BC337-40 ® SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC337-25 BC337-25 TO-92 / Bulk BC337-25-AP BC337-25 TO-92 / Ammopack , Temperature 1 A 625 mW -65 to 150 o C 150 o C 1/5 BC337-25 / BC337 , = 500 mA V CE = 1 V h FE DC Current Gain I C = 100 mA for BC337-25 for BC337-40 V , pF BC337-25 / BC337-40 TO-92 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN STMicroelectronics
Original
Abstract: -025G 7-25 5000 Units / Bulk BC337-25RL1G 7-25 BC337-25ZL1G 7-25 BC337-040G 7-40 5000 , BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features · , this data sheet. Publication Order Number: BC337/D BC337, BC337-25, BC337-40 ELECTRICAL , CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) BC337 BC337-25 BC337-40 (IC = 300 mA, VCE = , BC337, BC337-25, BC337-40 1.0 s 1000 1.0 ms TJ = 135°C 100 ms hFE, DC CURRENT GAIN IC ON Semiconductor
Original
BC337G BC337-025G BC33 7-25 040G BC337RL1G BC337-
Abstract: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter , © 1997 Fairchild Semiconductor Corporation Max Units BC337-16 / BC337-25 625 5.0 83.3 Fairchild Semiconductor
Original
Abstract: this datasheet [Email] space This pagePrint version BC33725TA Full Production BC33725BU Full , BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier , Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 33716-25, Rev B BC337-16 / BC337-25 NPN General , products >> Home find products space space space BC337-25 Products groups NPN General Purpose Amplifier Fairchild Semiconductor
Original
bc337 cross-reference bc337 fairchild BC33716 cross BC33716TA BC33716BU
Abstract: -40 BC337 BC337A BC337-16 BC337-25 BC337-40 BC338 BC338-16 BC338-25 BC338-40 BC547 BC547A BC547B , ) BC857B (2) BC337-25 (1) BF420 BC847B 2N3904 (1) SO2222A BC847B (2) BC847BW SO2222AW BC847BW (2 , -25 ST Nearest TX2 BC327-25 BC327-25 BC327-25 BC327-40 BC337-25 TSH512 SBY VOX LED BC337-25 buffer1 BC337-25 BC337-25 BC337-40 BC337-25 BC337-25 BC337-25 BC337-40 BC547B , HFE (mA) (V) (V) min HFE max 2N3904 2N3906 BC327-25 BC327-40 BC337-25 BC337-40 BC547B STMicroelectronics
Original
MMBT3094 transistor 2N3906 smd 2A SOT23 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BF722 BF723 BFN38 CZTA42 CZTA92 KSA539
Abstract: BC337.25 Bipolar Transistors General Description: Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier. Dimensions , 14/09/09 V1.1 BC337.25 Bipolar Transistors Absolute Maximum Ratings (Ta = 25°C unless , ://www.newark.com http://www.cpc.co.uk Page 14/09/09 V1.1 BC337.25 Bipolar Transistors Electrical , fT Minimum (MHz) Ptot (mW) Package Part Number 60 625 TO-92 BC337.25 Multicomp
Original
pin configuration Bc337
Abstract: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced , Corporation Max Units BC337-16 / BC337-25 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 33716-25, Rev B BC337-16 / BC337-25 Discrete POWER & Signal Technologies (continued , VCE = 1.0 V, IC = 500 mA 100 160 40 250 400 0.7 V 1.2 V BC337-16 / BC337-25 Fairchild Semiconductor
Original
C 337-25 C 33725 NPN general purpose transistor BC337 transistor BC337 337-25 transistor BC337-16
Abstract: BC337-16 / BC337-25 F A IR C H IL D S E M IC O N D U C T O R tm Discrete POW ER & Signal Technologies BC337-16 BC337-25 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 m A. Sourced from Process 12. See TN , -16 / BC337-25 625 5.0 83.3 200 Units mW m W /°C °C/W °C/W -
OCR Scan
Abstract: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings , Semiconductor Corporation Max Units BC337-16 / BC337-25 625 5.0 83.3 mW mW/°C °C/W 200 °C , 250 400 0.7 V 1.2 V BC337-16 / BC337-25 NPN General Purpose Amplifier TRADEMARKS Fairchild Semiconductor
Original
Abstract: 12 ­55 to +150 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C BC337, BC337-16, BC337-25 , : BC337/D BC337, BC337­16, BC337­25, BC337­40, BC338­25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337­16 BC337­25/BC338­25 BC337­40 VBE(on) VCE(sat) 100 100 160 , , BC337­16, BC337­25, BC337­40, BC338­25 1000 IC, COLLECTOR CURRENT (mA) 1.0 s 1.0 ms TJ = 135°C 100 us ON Semiconductor
Original
cbc337 BC-337 226AA
Abstract: BC337.25 Bipolar Transistors General Description: Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier. Dimensions , Page 1 10/05/08 V1.1 BC337.25 Bipolar Transistors Absolute Maximum Ratings (Ta = 25°C unless , Test: Pulse Width 300ms, Duty Cycle 2%. Page 2 10/05/08 V1.1 BC337.25 Bipolar Transistors , 625 TO-92 BC337.25 Page 3 10/05/08 V1.1 BC337.25 Bipolar Transistors Notes Multicomp
Original
bc337/25 npn farnell transistor bc337 npn transistor bc337 datasheet
Abstract: -92 (Pb-Free) 5000 Units / Bulk BC337-25RL1 7-25 TO-92 2000 / Tape & Reel BC337-25RL1G , BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features · , section on page 4 of this data sheet. Publication Order Number: BC337/D BC337, BC337-25, BC337 , ON CHARACTERISTICS hFE DC Current Gain (IC = 100 mA, VCE = 1.0 V) - BC337 BC337-25 BC337 , 50 100 BC337, BC337-25, BC337-40 1.0 s 1.0 ms 1000 TJ = 135°C 100 ms hFE, DC ON Semiconductor
Original
BC3377 BC337-25G BC337-xx bc33725g BC337-40ZL1G BC337-40G
Abstract: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors , Publication Order Number: BC337/D BC337, BC337­16, BC337­25, BC337­40, BC338­25 ELECTRICAL , Current Gain (IC = 100 mA, VCE = 1.0 V) hFE ­ BC337 BC337­16 BC337­25/BC338­25 BC337 , 100 BC337, BC337­16, BC337­25, BC337­40, BC338­25 1.0 s 1.0 ms 1000 TJ = 135°C 100 us , ) Figure 7. Capacitances http://onsemi.com 3 100 BC337, BC337­16, BC337­25, BC337­40, BC338 ON Semiconductor
Original
BC33825 BC337 hfe
Abstract: BC337-25: 8B BC337-40: 8C 1 COLLECTOR 1 2 3 BASE EMITTER TO-92 ABSOLUTE MAXIMUM , =30V, IE=0) Collector Cutoff Current (VCE=45V, VBE=0) DC Current Gain (IC=100mA,VCE=1V) BC337-16 BC337-25 , . 2. 100 BC337-25 Typical hFE vs. IC T J= 150°C 600 CIB (EB) Capacitance, C (pF 500 400 PanJit International
Original
BC337 45V 800mA NPN Transistor TRANSISTOR BC337-25 TRANSISTOR BC337-40 BC337 45V 800mA bc337-40 npn transistor transistor bc33740 MIL-STD-202
Abstract: Device BC337 BC337RL1 BC337ZL1 BC337-16 BC337-16RL1 BC337-16ZL1 BC337-25 BC337-25RL1 BC337-25ZL1 BC337-25ZL1G , ://onsemi.com 283 BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon , Order Number: BC337/D BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA , -16 BC337-25/BC338-25 BC337-40 hFE - 100 100 160 250 60 - - - - - - - - - 630 250 400 630 - 1.2 0.7 Vdc Vdc , -16, BC337-25, BC337-40, BC338-25 1000 IC, COLLECTOR CURRENT (mA) 1.0 s 1.0 ms TJ = 135°C 100 ms dc TC = 25 ON Semiconductor
Original
BC327-16 cbc327 BC327 BC327/D BC338-25ZL1 BRD8011/D
Abstract: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings , © 1997 Fairchild Semiconductor Corporation Max Units BC337-16 / BC337-25 625 5.0 83.3 , 500 mA 100 160 40 250 400 0.7 V 1.2 V BC337-16 / BC337-25 NPN General Purpose Fairchild Semiconductor
Original
Abstract: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings , Semiconductor Corporation Max Units BC337-16 / BC337-25 625 5.0 83.3 mW mW/°C °C/W 200 °C , 250 400 0.7 V 1.2 V BC337-16 / BC337-25 NPN General Purpose Amplifier TO-92 Tape Fairchild Semiconductor
Original
OF TRANSISTOR BC337 transistor 33725 bc337 m CBVK741B019 F63TNR PN2222N
Showing first 20 results.