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Part : BC237B Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : - Price Each : -
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BC237 Datasheet

Part Manufacturer Description PDF Type
BC237 Fairchild Semiconductor Switching and Amplifier Applications Original
BC237 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC237 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC237 Korea Electronics General Purpose Transistor Original
BC237 On Semiconductor Amplifier Transistor NPN Original
BC237 On Semiconductor CASE 29-4, STYLE 17 TO-2 (TO-26AA) Original
BC237 On Semiconductor Amplifier Transistor NPN Silicon Original
BC237 Philips Semiconductors Small-signal Transistors Original
BC237 Philips Semiconductors NPN general purpose transistors Original
BC237 Sinyork Mini size of Discrete semiconductor elements Original
BC237 Advani-Oerlikon Silicon Transistor Guide Scan
BC237 Bharat Electronics Shortform Transistor Data Scan
BC237 Continental Device India Semiconductor Device Data Book 1996 Scan
BC237 Crimson Semiconductor Transistor Selection Guide Scan
BC237 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BC237 ITT Semiconductors Transistors 1980 Scan
BC237 Korea Electronics General Purpose Transistor Scan
BC237 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan
BC237 Micro Electronics Semiconductor Device Data Book Scan
BC237 Micro Electronics NPN SILICON PLANAR EPITAXIAL TRANSISTOR Scan
Showing first 20 results.

BC237

Catalog Datasheet MFG & Type PDF Document Tags

BC237

Abstract: BC238 SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES â'¢ High Voltage : BC237 Vceo=45V. â'¢ Low Noise , BC237 VcBO 50 V BC238 30 BC239 30 Collector-Emitter Voltage BC237 VcEO 45 V BC238 20 BC239 20 Emitter-Base Voltage BC237 Vebo 6 V BC238 5 BC239 5 Collector Current BC237 Ic 100 mA BC238 100 BC239 50 Emitter Current BC237 Ie -100 mA BC238 -100 BC239 -50
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BC239 NPN transistor transistor BC238 transistor bc237 transistor bc237 bc337 bc2378 BC238-5 BC237/8/9 BC307/308/309 100MH

transistor bc237

Abstract: bc238 . FEATURES · High Voltage : BC237 VCECJ=45V. · Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (Vce=6V, Ic= 0 , BC237/8/9 MAXIMUM RATING (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BC237 BC238 BC239 BC237 ^ BC238 BC239 BC237 BC238 BC239 BC237 BC238 BC239 BC237 BC238 BC239 SYMBOL VcBO Collector-Emitter , /2 BC237/8/9 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current DC , Voltage Transition Frequency Collector Output Capacitance Noise Figure B C 23^| BC238 BC239 BC237 BC238
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bc237

Abstract: BC237B /239 BC237A BC237B/238B BC237C/238C/239C VCE=5V, IC=2mA DC current gain hFE(2) BC237 BC239 BC237A BC237B/238B BC237C/238C/239C VCE=5V, IC=100mA hFE(3) BC237A BC237B/238B BC237C/238C/239C IC=10mA, IB , BC237/238/239(NPN) TO-92 Bipolar Transistors 1. COLLECTOR 2. BASE 3. EMITTER TO , Parameter Collector-Emitter Voltage BC237 BC238/239 Emitter-Base Voltage BC237 BC238/239 Collector Current , Dimensions in inches and (millimeters) VEBO IC PC RJA RJC Tj Tstg V A mW /W /W BC237/238/239(NPN
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238c 238B BC237/238/239 BC237B/238B BC237C/238C/239C BC237/239

transistor bc237 bc337

Abstract: BC238 NPN transistor download datasheet SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low , With PNP type BC307/308/309. G J D ) SYMBOL RATING 50 L BC237 UNIT , . COLLECTOR 3. EMITTER V TO-92 6 BC238 VEBO 5 V BC239 5 BC237 100 BC238 IC 100 BC239 mA 50 BC237 Emitter Current 3 20 BC237 Collector Current
KEC
Original
BC238 NPN transistor download datasheet BC238 datasheet BC239 NPN transistor download datasheet BC237 equivalent bc238 equivalent transistor bc237 datasheet

BC237

Abstract: BC239C BC237B/238B BC237C/238C/239C BC237 BC237A BC237B/238B BC237C/238C/239C BC237A BC237B/238B BC237C/238C , °C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC237 45 50 6.0 , /°C °C BC237,A,B,C BC238B,C BC239C 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO , = 125°C (VCE = 50 V, VBE = 0) TA = 125°C BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 -
ON Semiconductor
Original
bc237v

bc238

Abstract: bc237v Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE BC237A BC237B/238B BC237C/238C/239C BC237 BC237A BC237B/238B BC237C/238C/239C BC237A BC237B/238B BC237C/238C/239C VCE , Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 ­55 to +150 BC239 25 30 5.0 Unit Vdc Vdc Vdc mAdc BC237,A,B,C BC238B,C BC239C , ) Collector Cutoff Current (VCE = 30 V, VBE = 0) BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238
ON Semiconductor
Original
226AA

BC239 NPN transistor

Abstract: transistor bc238 SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package , . DESCRIPTION SYMBOL BC237 BC238 BC239 UNITS Collector -Emitter Voltage VCEO 45 25 , TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS , IC=2mA,IB=0 VCEO BC237 BC238 BC239 EmitterBase Voltage VEBO IE=100µA, IC=0 BC237 BC238,BC239 , V V VCE=30V,VBE=0 15 BC237 VCE=50V,VBE=0 15 nA BC238, BC239 VCE=30V,VBE
Continental Device India
Original
15KHZ bc238a C-120

amd 2904

Abstract: BC237A CHARACTERISTICS DC Current Gain (IC = 10 (iA, VCE = 5 V) BC237A BC237B/238B BC237C/238C/239C hFE 90 150 270 (|C = 2 mA. VCE = 5 V) BC237 BC238 BC239 BC237A BC237B/238B BC237C/238C/239£L 120 120 120 120 200 380 170 290 500 800 800 800 220 460 800 (Ic = 100 mA, VCE = 5 V) BC237A BC237B/238B BC237C/238C/239C , , Junction to Case RflJC 125 °C/W BC237,A,B,C BC238,B,C BC239,C CASE 29-04, STYLE 17 TO-92 (TO-226AA) 1 , Breakdown Voltage (IC = 2.0 mA, IB = 0) BC237 BC238 BC239 VfBRjCEO 45 25 25 V Emitter-Base Breakdown
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amd 2904

bc237

Abstract: bc238 BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max , Voltage : BC237 VCEO=45V. MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING 50 L H UNIT F F 1 2 3 Collector-Base Voltage BC238 BC239 BC237 VCBO 30 30 45 V M C BC237 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 , Collector-Emitter Voltage BC238 BC239 BC237 VCEO 20 20 6 V TO-92 Emitter-Base Voltage BC238
KEC
Original
BC237 complementary BC307 transistor bc239 120120A

BC238B

Abstract: BC237 otherwise noted) (Continued) Symbol Min Typ Max BC237A BC237B/238B BC237C/238C/239C - - - 90 150 270 - - - (IC = 2.0 mA, VCE = 5.0 V) BC237 BC239 BC237A BC237B/238B , 100 mA, VCE = 5.0 V) BC237A BC237B/238B BC237C/238C/239C - - - 120 180 300 - - , MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS
Motorola
Original
BC238 MOTOROLA BC238B MOTOROLA bc237 motorola BC237/D

BC237

Abstract: 238B BC238/239 15 BC237A 150 BC237C/238C/239C 270 120 800 BC239 120 800 BC237A 120 220 BC237B/238B 200 460 BC237C/238C/239C 380 800 VCE=5V, IC=2mA BC237 hFE(2) VCE=5V, IC=100mA BC237A 120 BC237B/238B 180 BC237C/238C/239C 300 hFE(3 , JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237 , Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage Emitter-Base Voltage
Jiangsu Changjiang Electronics Technology
Original
transistor 238B TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c bc2376 BC237B/238

BC237B

Abstract: transistor 238B 5 V 15 BC237B/238B 150 270 VCE=5V, IC=2mA BC237 BC239 BC237A hFE(2) BC237B/238B BC237C/238C/239C VCE=5V, IC=100m A 120 120 120 200 380 170 290 500 BC237A BC237B/238B 180 BC237C/238C/239C 300 IC=10mA, IB=0.5mA BC237/238/239 VCE(sat) IC , ) Collector-emitter saturation voltage nA 90 BC237A BC237C/238C/239C DC current gain nA 15 VEB , BC237/238/239 BC237/238/239 TRANSISTOR (NPN) FEATURES Power dissipation PCM: Collector
WEJ Electronic
Original
BC237B equivalent BC237A transistor download datasheet B/238B

BC237

Abstract: bc237b =0 V V BC238/239 15 BC237A 150 BC237C/238C/239C 270 120 800 BC239 120 800 BC237A 120 220 BC237B/238B 200 460 BC237C/238C/239C 380 800 VCE=5V, IC=2mA BC237 hFE(2) VCE=5V, IC=100mA BC237A 120 BC237B/238B 180 BC237C/238C , 90 BC237B/238B hFE(1) DC current gain UNIT V BC237 VCE=5V, IC=10A MAX 50 , www.haorm.cn BC237/238/239 TRANSISTOR (NPN) TO-92 FEATURES Amplifier dissipation NPN Silicon 1
HAROM
Original

BC238 NPN transistor download datasheet

Abstract: lowest noise audio NPN Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B , Circuits Of Television Receivers. DESCRIPTION SYMBOL BC237 BC238 BC239 UNITS Collector , NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic , CONDITION Collector Emitter Voltage IC=2mA,IB=0 VCEO BC237 BC238 BC239 EmitterBase Voltage VEBO IE=100µA, IC=0 BC237 BC238,BC239 CollectorCut off Current BC238, BC239 ICES MIN TYP MAX
Continental Device India
Original
lowest noise audio NPN TRANSISTOR W2 bc238 npn bc238 data sheet

238b

Abstract: BC238 =0.5mA at IC=100mA, IB=5mA BC237A BC237B,238B BC237C,238C,239C BC237 BC239 BC237A BC237B,238B BC237C,238C,239C BC237A BC237B,238B BC237C,238C,239C BC237,238,239 BC237,239 BC238 Base Emitter , BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A , BC237. BC239 Characteristics (TA=25 oC unless otherwise noted) Symbol DC Current Gain at VCE , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 BC237. BC239 Characteristics
Semtech Electronics
Original
BC238 NPN transistor transistor bc239C TRANSISTOR BC237a

BC239

Abstract: BC238 =125ºC 4.0 µA BC237_239Rev_1 201205E Continental Device India Limited Data Sheet Page 1 of 5 , Width < 300µs, Duty Cycle < 2% µ BC237_239Rev_1 201205E Continental Device India Limited Data , 645 gm/ pcs 2K 12.5" x 8" x 1.8" 2K 17" x 15" x 13.5" 32K 12.5 kgs BC237_239Rev_1 , per EU Directive 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE). BC237_239Rev_1 , 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com BC237_239Rev_1 201205E Continental Device
Continental Device India
Original
TYP120 TYP150 TYP270 BC239B CDIL BC237 silicon planar epitaxial transistors BC238/BC239

BC237

Abstract: BC238B BC237A BC237B/238B BC237C/238C/239C - - - 90 150 270 - - - (IC = 2.0 mA, VCE = 5.0 V) BC237 BC239 BC237A BC237B/238B BC237C/238C/239C 120 120 120 200 380 - - 170 290 500 800 800 220 460 800 (IC = 100 mA, VCE = 5.0 V) BC237A BC237B/238B BC237C , BC237,A,B,C BC238B,C BC239,C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector­Emitter Voltage VCEO 45 25 25 Vdc
ON Semiconductor
Original
BC237B/2388/2398 BC238B npn Bc238B, NPN

BC238B

Abstract: BC239 ) BC237A â'" 90 â'" BC237B/238B â'" 150 â'" BC237C/238C/239C â'" 270 â'" (IQ = 2.0 mA, Vqe = 5.0 V) BC237 120 â'" 800 BC239 120 â'" 800 BC237A 120 170 220 BC237B/238B 200 290 460 BC237C/238C/239C 380 500 800 (Iq = 100 mA, VqE = 5.0 V) BC237A â'" 120 â'" BC237B/238B â'" 180 â'" BC237C , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC237/D Amplifier Transistors NPN , Watts mW/°C Operating and Storage Junction Temperature Range Tj, Tstg -55 to+150 °C BC237,A,B,C
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BC237

Abstract: BC238 datasheet BC237/238/239 BC237/238/239 Switching and Amplifier Applications · Low Noise: BC239 TO , Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter : BC237 : BC238/239 Value 50 30 Units V V VCEO Collector-Emitter Voltage : BC237 : BC238/239 45 25 V V VEBO Emitter-Base Voltage : BC237 : BC238/239 6 5 V V IC , : BC237 : BC238/239 BVEBO Parameter Collector-Emitter Breakdown Voltage : BC237 : BC238/239
Fairchild Semiconductor
Original

Transistor BC239c

Abstract: BC239 Voltage at IC=10mA, IB=0.5mA at IC=100mA, IB=5mA BC237A BC237B,238B BC237C,238C,239C BC237 BC239 BC237A BC237B,238B BC237C,238C,239C BC237A BC237B,238B BC237C,238C,239C BC237,238,239 BC237,239 , BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A , ) Dated : 07/12/2002 BC237. BC239 Characteristics (TA=25 oC unless otherwise noted) Symbol DC , ) Dated : 07/12/2002 BC237. BC239 Characteristics (TA=25 oC unless otherwise noted) Symbol
Semtech Electronics
Original

bc237 siemens

Abstract: BC239 5.91 SIE D fl23SbOS D o m s m 070 H S I E G BC237 . . .BC 239 T -2 9 -2 1 SIEMENS , SIE D aSBSbQS 00M1S42 TO? « S I E G BC237 . . . BC 239 T-2 9 - 2 1 SIEMENS , BC237 . . .BC 239 T-29-21 SIEMENS AKTIENGESELLSCHAF Electrical Characteristics at 7a = 25 'C , Aktiengesellschaft 261 SIE D flSBSbOS OGMISMM f l f l T «SIEG BC237 . . .BC 239 T-29-21 SIEMENS , ' Siemens Aktiengesellschaft 262 SIE D fl23SbGS GÜ41S4S 71b « S I E G BC237 . . .BC 239 T
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bc237 siemens 237B marking CODE 50G TO92 C307B C-239 C237B G041540 Q62702-C697 Q62702-C276 Q62702-C277 Q62702-C698 Q62702-C278

bc 357 transistor

Abstract: transistor BC 55 BC237/238/239(NPN) TO-92 Bipolar Transistors 1. COLLECTOR 2. BASE 3. EMITTER TO , Parameter Collector-Emitter Voltage BC237 BC238/239 Emitter-Base Voltage BC237 BC238/239 Collector Current , Dimensions in inches and (millimeters) VEBO IC PC RJA RJC Tj Tstg V A mW /W /W BC237/238/239(NPN , Collector-base breakdown voltage Symbol V(BR)CBO Test IC=100A, IE=0 conditions BC237 BC238/239 IC=2mA, IB=0 IE=100A, IC=0 BC237 BC238/239 BC237 BC238/239 VCE=50V, VBE=0 VCB=30V,IE=0 VCE=5V, IC=10A hFE(1) BC237 BC238
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bc 357 transistor transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 CB-76

tranzystor BC 238

Abstract: KSS 240 BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A , Ratings (Ta=25oC) Symbol BC237 Collector Emitter Voltage VCEO 45 25 25 V , ) Dated : 07/12/2002 BC237. BC239 Characteristics (TA=25 oC unless otherwise noted) Symbol DC , Voltage at IC=10mA, IB=0.5mA at IC=100mA, IB=5mA BC237A BC237B,238B BC237C,238C,239C BC237 BC239 BC237A BC237B,238B BC237C,238C,239C BC237A BC237B,238B BC237C,238C,239C BC237,238,239 BC237,239
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tranzystor BC 238 KSS 240 M4520 KLC-6 m1024

TRANSISTOR 237b

Abstract: BC237 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237 , Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage Emitter-Base Voltage BC237 BC238/239 6 5 Units V V IC Collector Current -Continuous 0.1 A PC , ICBO Test conditions IC=100A, IE=0 MIN BC237 45 BC238/239 25 BC237 6 BC238/239 IE=100A, IC=0 30 BC237 IC=2mA, IB=0 5 VCE=50V, VBE=0 VCB=30V,IE=0 V V
Fairchild Semiconductor
Original
TRANSISTOR 237b 237B TRANSISTOR 2bc237 BC237/238 BC237BTFR BC237BU BC237CBU BC237TF BC237TFR

BC238 h parameter

Abstract: bc313 SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package , . DESCRIPTION SYMBOL BC237 BC238 BC239 UNITS Collector -Emitter Voltage VCEO 45 25 , TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS , IC=2mA,IB=0 VCEO BC237 BC238 BC239 EmitterBase Voltage VEBO IE=100µA, IC=0 BC237 BC238,BC239 , V V VCE=30V,VBE=0 15 BC237 VCE=50V,VBE=0 15 nA BC238, BC239 VCE=30V,VBE
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BC107 BC167 BC317 BC177 BC257 BC320 BC238 h parameter bc313 BC231 BC168
Showing first 20 results.