500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
SN65LBC179QDREP Texas Instruments LINE TRANSCEIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 visit Texas Instruments
SN65LBC179PE4 Texas Instruments Low-Power Differential Line Driver And Receiver Pair 8-PDIP -40 to 85 visit Texas Instruments
SN65LBC179APE4 Texas Instruments LINE TRANSCEIVER, PDIP8, ROHS COMPLIANT, PLASTIC, DIP-8 visit Texas Instruments
SN75LBC179ADRG4 Texas Instruments Low-Power Differential Line Driver and Receiver Pairs 8-SOIC 0 to 70 visit Texas Instruments
SN65LBC179QDRG4 Texas Instruments Low-Power Differential Line Driver And Receiver Pair 8-SOIC -40 to 125 visit Texas Instruments Buy
SN75LBC179DRG4 Texas Instruments Low-Power Differential Line Driver And Receiver Pair 8-SOIC 0 to 70 visit Texas Instruments

BC177, BC178, BC179

Catalog Datasheet MFG & Type PDF Document Tags

BC177, BC178, BC179

Abstract: BC178 =10uA, IE=0 Collector -Base Voltage BC177 BC178 BC179 Collector -Emitter Voltage VCEO IC=2mA,IB , BC177 BC178 BC179 BC177 BC178 BC179 A Group B Group C Group 50 30 25 4.0 - uA V V V 45 25 20 - V V V 5.0 IE=10uA, IC=0 DC Current BC179 20 25 25 5.0 , 4.0 dB dB dB pF BC177 BC178 BC179 A Group B Group C Group 125 125 240 125 240 , VCEO VCES VCBO VEBO IC PD BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18 BC177 45
Continental Device India
Original
BC177, BC178, BC179 C-120

BC179

Abstract: BC178 /deg C W mW/deg C deg C deg C/W MIN - TYP MAX 100 UNIT nA BC177 BC178 BC179 BC177 BC178 BC179 A Group B Group C Group 50 30 25 4.0 - uA V V V 45 25 20 - , BC177 BC178 BC179 A Group B Group C Group 125 125 240 125 240 450 500 900 900 260 , BC178 BC179 Collector -Emitter Voltage VCEO IC=2mA,IB=0 Emitter-Base Voltage VEBO hFE , BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18 BC177 45 50 50 5.0 Tj, Tstg BC178 25
Continental Device India
Original
Transistor BC177

transistor af 178

Abstract: bc 162 transistor dissipation versus temperature Plot = f (D; Rih = parameter W BC177. BC178, BC179 0,4 VthJA-' s 100 200 "C 1593 B-06 Permissible pulse load K rugc ~' W; v « parameter â"¢ BC177. BC178, BC179 , (Vqe) -VCE = 5V HA BC177,BC178,BC179 DC current gain hfE = Mib)-W:E = 5V BC 177, BC 178. BC 179 , Transition frequency fT=i(/'c);(ramb = 25»c) HHz BC177. BC178, BC179 103 BC 177 BC 178 BC 179 Collector , Transistors BC 177 -SIEMENS AKTIENGESELLSCHAF -BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon
-
OCR Scan
Q62702-C684 Q62702-C141 Q62702-C685 BG177 transistor af 178 bc 162 transistor TRANSISTOR BC 157 BC179 transistor bc 106 transistor TO-18 BC-177 pnp transistor Q62702-C142 Q62702-C153

BC177 NPN transistor

Abstract: BC177 pnp transistor BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm (inches) GENERAL PURPOSE SMALL SIGNAL , °C unless otherwise stated) BC177 BC178 BC179 VCBO Collector ­ Base Continuous Voltage , Document Number 5760 Issue 1 BC177 BC178 BC179 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , BC179A 125 260 BC179B hFE -30 BC179 V(BR)EBO BC178 IC = -2mA V(BR)CEO -50 BC179 V(BR)CBO BC177 240 500 Collector Base Breakdown Voltage Collector Emitter
Semelab
Original
BC177 NPN transistor BC177 pnp transistor Transistor BC 177 Datasheet BC177 transistor BC178-BC179 BC177 NPN transistor datasheet 100MH

BC177, BC178, BC179

Abstract: BC179 temperaturowa mocy strat Pc = / (iamb) 30 [mA] 70 60 50 40 30 20 0' BC177 BC178 BC179 25°C . -0,8 , '" pa-rametr 4-74/2 4 10 -Uce[Vj 20 -h H IO3 4 2 102 4 2 10' 4 2 10" BC177 BC178 BC179 , (Je) [mA] W 6 4 2 10' 6 4 2 10" 6 4 2 W BC177 BC178 BC179 , TRANZYSTORY p-n-p * BC177, BC178 i BC179 4-74/2 1 Tranzystory krzemowe epiplanarne malej mocy , malej cz^stotliwosci i stop-niach steruj^cych. Tranzystor BC179 jest przeznaczony do stosowania w
-
OCR Scan
BC107 BC108 BC109 BC118 BC111 BC17 BC177BC178

BC177

Abstract: bc107 curves complementary types for the BC107, BC108 and BC109. QUICK REFERENCE DATA bc177 bc178 bc179 , EC 134) T-31-17 St E ]> 711Gfl2b 0041^71 fiTö WPHIN BC177 BC178 BC179 Collector-base , '"31â'"17 BC177 to 179 711062b DOmiTE 734 MPHIN BC177 BC178 BC179 typ. 1,2 dB < 4 dB typ. 2 2 1 dB < 10 , circuits of television receivers. The BC179 is primarily intended for low-noise input stages in tape , BC179 \lr\i~ VCE - RS =
-
OCR Scan
bc107 curves BC17S BC178B BC179 philips transistor BC109 j179 D04117G BC17E 7Z09694 BC17I 7Z09693

BC177

Abstract: BC178 BC107, BC108 and BC109. QUICK REFERENCE DATA BC177 BC178 BC179 Collector-emitter voltage {+ VgE = , 134) BC177 BC178 BC179 Collector-base voltage (open emitter) -vCBO max. 50 30 25 V , signal current gain at f = 1 kHz -lc = 2mA;-VCE = 5V F F hFE hfe BC177 BC178 BC179 typ. 1,2 dB , television receivers. The BC179 is primarily intended for low-noise input stages in tape recorders, hi-fi , °C BC179 -VCE = RS =
-
OCR Scan
bc1798 BC177A of BC107 Characteristic curve BC107 BC177-BC178-BC179 silicon planar epitaxial transistors S3T31

2N930 TEXAS INSTRUMENTS

Abstract: Transistor BC109 A. B and C hFE RANGES [Complementary to BC177, BC178, BC179 BC177 BC178 BC179 PNP PNP PNP T018 T018
-
OCR Scan
2N930 TEXAS INSTRUMENTS T018 2n2484 complementary BC107 transistor Texas Instruments BC107 BC109 texas instruments BCW35GP 2N2483 2N2484 2N929 2N930 N2483

transistor af 178

Abstract: BC179 versus temperature P l o t = I I T ) ; R t h " parameter W BC177. BC178, BC179 Permissible pulse load K % jc = i(t);v = parameter " BC177. BC178, BC179 0 100 T 200*0 iq-i | ilih lil , Silicon Transistors BC 177 -S IE M E N S AKTIENGESELLSCHAF -BC179 BC , ilk BC179 nA O u tp u t characteristics ¡c = f (V c eì Ib - parameter B C 179 / 10, 1000 , 2 6 'C - V ce = 6 V; / = 1 kHz; T * * , = 2 S "C BC179 k k Noise figure N f = MW -V
-
OCR Scan
BC 179 TI-5045 BC 177 transistor BC179E C154 TRANSISTOR 62702-C 62702-C142 62702-C153 62702-C154 62702-C686

bc178

Abstract: BC177 pnp transistor SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BC177 BC178 BC179 Unit , BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in , nA µA T amb = 150 °C for BC177 for BC178 for BC179 ­ 45 ­ 25 ­ 20 V V V for BC177 for BC178 for BC179 ­ 50 ­ 30 ­ 25 V V V ­5 V for for for for for * Pulsed : pulsed duration = 300 µs, duty cycle = 1 %. 2/6 Min. BC177 BC177 BC178 BC178 BC179 Gr. A
STMicroelectronics
Original
transistor datasheet NPN BC178 BC107 characteristic applications of Transistor BC108 DATASHEET Transistor BC109 BC107 equivalent bc109 not metal BC177-BC178-B179

BC107 equivalent transistors

Abstract: bc109 equivalent A. B and C hFE RANGES [Complementary to BC177, BC178, BC179 BC177 BC178 BC179 PNP PNP PNP T018 T018 , 150 â  Complementary Low Noise Amplifiers SS9365F136 BS9365 F136 BS9365F136 BC177 BOI 78 BC179
-
OCR Scan
BC107 equivalent transistors bc109 equivalent EQUIVALENT TRANSISTOR bc108 transistor t05 bc108 equivalent equivalent transistor bc107 BS93G5 BFT61 BFT62 BFI79 BFT80 BFT81

BC177 NPN transistor

Abstract: BC178 A. B and C hFE RANGES [Complementary to BC177, BC178, BC179 BC177 BC178 BC179 PNP PNP PNP T018 T018 , T018 PNP BC107 BC177 BC108 BC178 BC109 BC179 High Current Amplifiers NPN T05 PNP BFT39 BFT79
-
OCR Scan
BFQ35 BC326 bc325 TRANSISTOR bc108 bf179 BF177 transistor NPN BC178 BF178 BF179 8FT57 BFT58 BFT59 BC312

bc109 equivalent

Abstract: BC107 equivalent transistors A. B and C hFE RANGES [Complementary to BC177, BC178, BC179 BC177 BC178 BC179 PNP PNP PNP T018 T018 , T018 PNP BC107 BC177 BC108 BC178 BC109 BC179 High Current Amplifiers NPN T05 PNP BFT39 BFT79
-
OCR Scan
BC177 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent equivalent to BC177 transistor equivalent bc108 BS9363 BD253 BU105 BU108 BS936S BU126

C495 transistor

Abstract: C735 transistor A. B and C hFE RANGES [Complementary to BC177, BC178, BC179 BC177 BC178 BC179 PNP PNP PNP T018 T018
-
OCR Scan
C495 transistor C735 transistor c638 transistor C756 TRANSISTOR C644 transistor transistor c495 BS9300 2N2221 2N2906- 2N2221A- 2N2906A- 2N2222A

35H21

Abstract: BC178 motorola .) Sym bol 'c e s 100 4 B C 1 77 BC178 BC179 BC177 BC178 BC179 V (B R }C B O 50 30 25 45 25 20 5 nA MA V , Vdc Vdc Vd c Amp Watt mW/°C Watt mW/°C °C 1 Emitter thru BC179, A, B, C C A S E 22-03, ST Y LE 1 , BC178 BC179 A Group B Group C Group hFE 120 120 180 12 0 180 380 460 800 800 220 460 800 V 0.2 , fT NF BC179 BC179 B C 1 77/1 7 8 MHz 200 300 dB 4 4 10 MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs , , B, C thru BC179, A, B, C ELECTRICAL CHARACTERISTICS Output Capacitance {V CB = 10 V. f = 1 M H z
-
OCR Scan
35H21 BC178 motorola Motorola 3-252 MBC177 BC177 MOTOROLA

bc1782

Abstract: silicon planar epitaxial transistors J V_ BC177 BC178 BC179 ty p . < ty p . < 2 10 BC177 , BC178 30 25 200 300 175 125 500 100 BC179 25 20 200 300 175 125 500 100 MHz V V mA mW °C *T F F , 200 300 - 6 5 to + 150 max 175 BC179 25 V 25 V 20 V 5 V mA mA mA mW °C °C C o lle cto r e m itte r
-
OCR Scan
bc1782 BC177B

EQUIVALENT TRANSISTOR bc108

Abstract: bc109 equivalent A. B and C hFE RANGES [Complementary to BC177, BC178, BC179 BC177 BC178 BC179 PNP PNP PNP T018 T018 , T018 PNP BC107 BC177 BC108 BC178 BC109 BC179 High Current Amplifiers NPN T05 PNP BFT39 BFT79 ,   Complementary Low Noise Amplifiers SS9365F136 BS9365 F136 BS9365F136 BC177 BOI 78 BC179 TÃ18 TOI 8 TOI 8 PNP
-
OCR Scan
equivalent transistor of 2n2219a B-593 for transistor bc107 2N3440 COMPLEMENTARY BC107 pnp equivalent Transistor BC107 NPN BCW34 BCW35 BF257 BF258 BF259 2N4036

bc322

Abstract: BC307,8,9 BC320 f l,2 ABSOLUTE MAXIMUM RATINGS (v) -VCES (v) -VCEO BC177 BC178 BC179 50 50 45 30 30 25 25 5 5 20 5 BC257 BC258 BC259 50 30 50 , 4 1.2 D.C. CURRENT GAIN (HFE) @ -V£8""57 ^ UNIT NF BC179 "I at-Ic TYP MAX
New Jersey Semiconductor
Original
bc322 BC167 BC237 BC317 3C307 BCJ08 3C309

C495 transistor

Abstract: c638 transistor A. B and C hFE RANGES [Complementary to BC177, BC178, BC179 BC177 BC178 BC179 PNP PNP PNP T018 T018 , T018 PNP BC107 BC177 BC108 BC178 BC109 BC179 High Current Amplifiers NPN T05 PNP BFT39 BFT79
-
OCR Scan
PNP Transistor 2N2222 equivalent c637 transistor TRANSISTOR bc107 current gain c372 transistor 2N2907 equivalent transistor C372 2N2907A 2N2222 2N2907 2N2218 8S9300 2N2219

bc177

Abstract: BC257 ptot * (mW) o o Tj, Tstg BC177 BC178 BC179 BC257 BC258 BC259 BC307 BC308 BC309 BC320 BC321 BC322 , No/5e Figure BC179 BC259 \ only BC309 BC322 SYMBOL NF MIN TYP MAX UNIT dB TEST CONDITIONS -IC=0.2mA
-
OCR Scan
BCJ07
Showing first 20 results.