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BC140 Datasheet

Part Manufacturer Description PDF Type
BC140 Central Semiconductor NPN Silicon Transistor Original
BC140 Philips Semiconductors Small-signal Transistors Original
BC140 Philips Semiconductors NPN medium power transistors Original
BC140 STMicroelectronics GENERAL PURPOSE TRANSISTORS Original
BC140 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan
BC140 Continental Device India Semiconductor Device Data Book 1996 Scan
BC140 Crimson Semiconductor Transistor Selection Guide Scan
BC140 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
BC140 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
BC140 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BC140 Infineon Technologies TRANS GP BJT NPN 40V 1A 3TO 39 Scan
BC140 Infineon Technologies PNP Silicon Transistors Scan
BC140 Micro Electronics NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES Scan
BC140 Micro Electronics Semiconductor Device Data Book Scan
BC140 Micro Electronics Semiconductor Devices Scan
BC140 Motorola European Master Selection Guide 1986 Scan
BC140 Motorola The European Selection Data Book 1976 Scan
BC140 N/A Basic Transistor and Cross Reference Specification Scan
BC140 N/A Basic Transistor and Cross Reference Specification Scan
BC140 N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

BC140

Catalog Datasheet MFG & Type PDF Document Tags

BC140

Abstract: BC140-BC141 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr. 10 BC140-141 Gr. 16 V CE = 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr.10 BC140-141 Gr.16 V CE = 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr.10 BC140-141 Gr.16 50 MHz 12 25 pF I C = 100 mA I B1 = 5 mA 250 ns I C = 100 mA I B1 = I B2 = 5 mA 850 ns BC140-BC141 Collector-emitter Saturation Voltage , Junction Temperature 175 °C January 1989 1/3 BC140-BC141 THERMAL DATA R t h j- cas e R t
STMicroelectronics
Original
BC141 BC160 BC161 BC140 equivalent BC140B BC140BC141 GR16 IC BC140 P008B

bc140

Abstract: BC141 ;VCE= 1 V hFE BC140 BC141 max. 40 60 max. 1 A max. 3,7 W max. 175 °C > 50 MHz BC140-10 BC140-16 , V 50 MHz 25 pF 80 pF BC140-10 BC140-16 BC141-10 BC141-16 40 90 63 100 100 160 160 , BC140 BC141 PHILIPS INTERNATIONAL 5bE D 711002b â¡â¡m'IbE ATS HPHIN SILICON PLANAR , BC140 BC141 PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 5hZ D 711065b D0mqb3 751 WPHIN ~~ T-33-05 BC140 THERMAL RESISTANCE From junction to
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BC140 10 J 3305 bc14016 7--33-OS 10JUS

TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 W BC140-10; BC141-10 63 100 160 BC140-16; BC141-16 100 160 250 50 - , 100 nA hFE DC current gain IC = 100 µA; VCE = 1 V BC140-10; BC141-10 - 40 - BC140-16; BC141-16 - 90 - BC140-10; BC141-10 63 100 160 BC140-16; BC141-16 100 160 250 BC140-10; BC141-10 - 20 - BC140-16; BC141-16 - 30 - hFE , DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors
Philips Semiconductors
Original
TRANSISTOR BC140 TRANSISTOR pnp BC140 TRANSISTOR BC141 BC141 philips transistor bc140 DC BC141 equivalent MAM317 SCA54

BC140

Abstract: bc141 NPN BC140/10 ­ BC140/16 NPN BC141/10 ­ BC141/16 GENERAL PURPOSE TRANSISTORS They are silicon , . ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ratings BC140 BC141 BC140 BC141 BC140 BC141 BC140 BC141 BC140 BC141 @ Tcase= < 45° @ Tamb= < 45° Collector-Base Voltage IE = 0 , noted COMSET SEMICONDUCTORS 1/3 NPN BC140/10 ­ BC140/16 NPN BC141/10 ­ BC141/16 Symbol , Voltage BC140 BC141 BC140 BC141 BC140 BC141 BC140 BC141 BC140 BC141 Min Gr 10 Gr 16
Comset Semiconductors
Original
DSA008994 1225pF pnp BC140 BC-140 BC140/10 BC140/16

TRANSISTOR BC140

Abstract: TRANSISTOR BC141 =1.0a 1.8 v hFE vce=1.0v, Ic=100|JA (bc140-10, bc141-10) 50 100 hFE vce=1.0v, Ic=100|JA (bc140-16, bc141-16) 100 205 hFE VCE=1.0V, lc=100mA (BC140-10, BC141-10) 63 110 160 hFE VCE=1.0V, lc=10QmA (bc140-16, BC141-16) 100 195 250 hFE vce=1.0v, lc=1.0a (bc140-10, bc141-10) 10 30 hFE vce=1.0v, lc=1.0a (bc140-16 , ) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors bc140 series bc141 series npn silicon transistor jedec to-39 case DESCRIPTION The CENTRAL SEMICONDUCTOR BC140 and BC141
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bc140 TRANSISTOR Transistor BC140-10 bc141.10 bc140 NPN transistor transistor 335 100MH

TRANSISTOR BC140

Abstract: TRANSISTOR pnp BC140 BC140 BC141 collector-emitter voltage BC140 BC141 peak collector current total power dissipation DC current gain BC140-10; BC141-10 BC140-I6; BC141-16 transition frequency open base CONDITIONS open , current gain BC140-10; BC141-10 BC140-16; BC141-16 DC current gain BC140-10; BC141-10 BC140-16; BC141-16 DC current gain BC140-10; BC141-10 BC140-16; BC141-16 collector-emitter saturation voltage , current (max. 1 A) · Low voltage (max. 60 V). BC140; BC141 PINNING PIN 1 2 3 emitter base collector
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TRANSISTOR BC140 npn bc141 transistor AW100

BC140

Abstract: BC141 BC140 BC141 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES THE BC140, BC141 ARE NPN SILICON , APPLICATIONS UP TO 1 AMPERE. THE BC140, BC141 ARE COMPLEMENTARY TO THE PNP TYPE BCl60, BCl6l RESPECTIVELY , Temperature VCES ?CEO VEBO ic Ptot Tstg I CASE TO-59 C E B BC140 BC14I 80? 100V 40V 60V 7V 7V 1A , SYMBOL BC140 MIN TYP MAX BC141 MIN TYP MAX UNIT TEST CONDITIONS Collector-Emitter Breakdown Voltage , -43510 "MICROTRON" BC140 . BC141 SWITCHING TIME TEST CIRCUIT (ton, toff) < Ose. /r-15ns Z.-100kS T
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100kS C-100 TCE-10Y

bc141-16

Abstract: BC140 100 10 100 1,2 1,8 0,6 1,0 50 25 80 BC140- 10 BC140-16 BC141- 10 BC141-16 40 90 63 100 160 20 100 160 , 10 V v CE0 'c ^tot Ti max. max. max. max. > 40 1 3,7 175 50 BC140-10 B C 1 4 1 10 D.C. current gain lc = 1 0 0 m A ; V C E = 1 V !FE > < 63 160 BC141 60 V A W °C MHz BC140-16 BC141 16 100 2 50 , BC140 BC141 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 metal package , A T A BC140 Collector-emitter voltage (open base) Collector current (d.c.) Total power dissipation
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BC141 equivalent

Abstract: bc140 www.cdilsemi.com BC140_141 Rev_1 281102E Continental Device India Limited Data Sheet Page 4 of 4 , Certified Manufacturer NPN SILICON POWER SWITCHING TRANSISTORS BC140, BC141 TO-39 Metal Can Package , Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC BC141 60 100 BC140 40 80 , Emitter Voltage BC140 BC141 IC=30mA, IB=0 *VCEO Collector Emitter Voltage BC140 BC141 VEBO IE , =150ºC IC=100mA, VCE=1V *hFE DC Current Gain BC140 / BC141 Group-6 Group-10 Group-16 IC=1A, VCE
Continental Device India
Original
NPN Transistor 1A metal switching transistor Ic 1A datasheet NPN C-120
Abstract: 150 °C D.C. current gain lc = 100/xA;VCE = 1 V BC140-10 BC140-16 BC141-10 BC141-16 40 90 , frequency at f = 20 MHz lc = 50 m A ;V CE = 10 V M Hz 50 BC140-10 BC141-10 D.C. current gain lc = 100 m A ; V C E = 1 V 63 160 > < hFE BC140-16 BC141-16 100 250 Dimensions in mm , _ . BC140 BC141 _ / V PHILIPS INTERNATIONAL SbE D â , F E R E N C E D A T A BC140 BC141 40 60 V Collector-emitter voltage (open base -
OCR Scan
T-33-0E

bc140

Abstract: BC140-6 Package Part Number BC140-6 BC140-10 TO-39 BC140-16 BC141-6 BC141-10 BC141-16 Page 4 , BC140, 141 NPN Medium Power Transistors Features: · NPN Silicon Power Switching Transistors. · , . Collector Page 1 31/05/05 V1.0 BC140, 141 NPN Medium Power Transistors Absolute Maximum Ratings Description Symbol BC140 BC141 Collector Emitter Voltage VCEO 40 60 Collector Base , /05 V1.0 BC140, 141 NPN Medium Power Transistors Electrical Characteristics (Ta = 25ºC unless
Multicomp
Original

BU140

Abstract: bc140 lc = 50 mA; VCg = 10 V *T > 50 MHz BC140-10 BC140-16 BC141-10 BC141-16 D.C. current gain , K/W K/W nA nA (iA /*A V V V V MHz pF pF BC140-10 BC140-16 D.C. current gain BC141 , . P-N-P complements are BC160 and BC161. QUICK REFERENCE DATA BC140 BC141 Collector-emitter voltage , . < typ. < typ. < typ. < > < < BC140 BC141 Collector-base voltage (open emitter) VCBO max. 80 , BC140 BC141 IAPX CHARACTERISTICS (continued) Tamb = ° Switching times lCon= 100mA;lBon = -|Boff
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BU140 BC-141 DM-127 Q27SD7 BU14U 100MA
Abstract: BC140-10 BC140-16 BC141-10 BC141-16 40 90 N AMER PHILIPS/DISCRETE bHE D bbS3H31 DOSTSOH TH4 , temperature Ti Transition frequency at f = 20 MHz Iq = 50 mA; V q E = 10 V > MHz 50 BC140-10 BC141-10 D.C. current gain lc = 1 0 0 m A ;V C E = 1 V hFE > < BC140-16 BC141-16 63 , N AMER PHILIPS/DISCRETE b=!E » bb53T31 0027507 111 BC140 BC141 IAPX SILICON PLANAR , complements are BC160 and BC161. Q U IC K R E F E R E N C E D A T A BC140 BC141 40 60 V -
OCR Scan
53T31 575DA IEC134 S3H31

bc140

Abstract: BC141 equivalent BC140-141 UNITS >50 MHz Cob Cib , BC140, -6, -10, -16 BC141, -6, -10, -16 TO-39 Medium power amplifier & switching applications Complementary BC160 & BC161 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC140 VCE0 40 Collector -Emitter , Specified) DESCRIPTION SYMBOL BC140 VCES VCE=100uA, VBE=0 >80 Collector -Emitter Voltage VCEO* IC , Current Ta=150 deg C VCE=60V, VBE=0 hFE* IC=100mA,VCE=1V DC Current Gain BC140,BC141 Group-6 Group
Continental Device India
Original

BC141A

Abstract: BC140 BC140 BC141 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES I THE BC140, BC141 ARE NFff SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS TJP TO 1 AMPERE. THE BC140, BC141-ABE COMPLEMENTARY TO THE PNP TYPE BCl60, BC161 RESPECTIVELY ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (vBE-0) Collector-Emitter Voltage (lB=0) Emitter-Base , "ton toff BC140 MIN TYP MAX BC141 MIN TYP MAX UNI' 80 100 V 40 60 V 7 7 V 100 100 nA 100
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BC141A BO9477

Bc140

Abstract: bc141 BC140 BC141 1 CASE TO-39 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES THE BC140, BC141 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THE BC140, BC141 -ARE COMPLEMENTARY TO THE PNP TYPE BCl60 , 650raW -55 to 175°C (TA=25°C unless otherwise noted) BC140 BC141 SYMBOL UNIT TEST CONDITIONS MIN , :3-430181-6 3 - 0 0 3 3 6 -a , 3*898423 FAX: 3-41032* BC140 . BC141 SWITCHING TIME TEST CIRCUIT (ton
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BC140

Abstract: BC140-10 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted ) BC140-10, -16 BC141-10, -16 CASE 79-04 , =150°C ices 100 100 nA laA Collector-Emitter Breakdown Voltage BC140 Series (ICES = 100 |iA, lE = 0) BC141 Series V(BR)CES 80 100 V Collector-Emitter Breakdown Voltaged) (Ic = 30 mA, IB = 0) BC140 Series BC141 , CHARACTERISTICS DC Current Gain(1) (IC = 100 mA, Vce = 1 V) for BC140, 141, -10 for BC140, 141, -16 hFE 63 100 1
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2N3019 BC140 MOTOROLA

1V160

Abstract: BC141-10 100 BC140-10, -16 BC14110, -16 CASE 79-04, STYLE 1 TO-39 (TO-205AD) 3 Collector !C Pd 0.8 4.6 , C u n le s s o th e r w is e n o te d .) Unit nA V V ic e s T a ^ 1 5 0 °C BC140 Series BC141 Series BC140 Series BC141 Series V (B R )C E S V |B R )C E O ON CHARACTERISTICS DC C u rre n t Garn (1) (IC = 100 m A , V c E = 1 V) fo r BC140, 141, -10 fo r BC140, 141, -16 C o lle c to r - E m
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1V160

T053

Abstract: BC140-16 20 0.1 200-450 5/2m 150M 0.3 BC109C REQ NPN T018 20 0.1 420-800 5/2m 150M 0.3 BC140 REQ NPN T039 40 1 40-400 1/0.1 50H 3.7 BC140-10 REQ NPN T039 40 1 63-160 1/0.1 50M 3.7 BC140-16 REQ NPN T039 40 1 100-250 1/0.1 50M 3.7 BC140-6 REQ NPN T039 40 1 40-100 1/0.1 50M 3.7 BC141 REQ NPN T039 60 1 40-400 1
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2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 T053 BC108A BC109C NPN bc108 IC hr BC107A 0000MH5

2N4033

Abstract: bc140 TO92 70 >70 150 ­ 156 BC160 TO-39 40 1000 3700 63 250 50 BC140 228 BC160-10 TO-39 40 1000 3700 63 160 50 BC140-10 228 BC160-16 TO-39 40 1000 3700 100 250 50 BC140-16 228 BC161 TO-39 60 1000 3700
Philips Semiconductors
Original
2N4031 2N4033 BC161-10 BC161-16 BC369 BC369-16 bc140 TO92 BC638-10 bc368 equivalent BC369 NPN BC368

transistor BC 153

Abstract: TRANSISTOR BC 141 dissipation versus temperature P»t = ' IT). Rih = parameter W BC140 k piot 1 Unr»0'tO 7V , \ \ 100 100 ZOO'O Permissible pulse load K rtt,jc = I (l); v = parameter W BC140, BC141 10 s- 10-zL_liiiMLll IO"1 10"5 10"* 10"3 IO"2 10"1 10°s Ve io3 5 IO2 5 Transition frequency h = f (jy Vce-WV BC140 , 140, BCY41 ni 1583 A-10 Transition frequency fy = f (/c) (Vce = 10V) MHZ BC140. BC14T 10® 10* s
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Q60203-X140 Q60203-X140-V10 Q60203-X140-P Q62702-C234 Q62702-C236 transistor BC 153 TRANSISTOR BC 141 BC transistor series transistor BC SERIES transistor BC 310 bc 103 transistor 0Q04104 BC1401 Q60203-X140-V6 Q60203-X140-V16

bc140

Abstract: bc 141 SILICON PLANAR NPN BC 140 BC 141 GENERAL PURPOSE TRANSISTORS The BC140 and BC 141 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are particularly designed for audio amplifiers and switching applications up to 1 A. The complementary PNP types are the BC 160 and BC 161. ABSOLUTE MAXIMUM RATINGS BC 140 I BC 141 P, 'c B tot Collector-base voltage (lE = 0) Collector-emitter voltage (lB = 0) Emitter-base voltage (lc = 0) Collector current Base current Total power
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bc 141 general purpose complementary transistors Bc 140 transistor transistor bc icbo nA npn

Bc 140 transistor

Abstract: TRANSISTOR BC 141 current (max. 1 A) · Low voltage (max. 60 V). BC140; BC141 PINNING PIN 1 2 3 emitter base collector , BC140 BC141 collector-emitter voltage BC140 BC141 peak collector current total power dissipation DC current gain BC140-10; BC141-10 BC140-I6; BC141-16 transition frequency open base CONDITIONS open , (IEC 134). BC140; BC141 SYMBOL VCBO BC140 BC141 VCEO PARAMETER collector-base voltage , base - collector-emitter voltage BC140 BC141 emitter-base voltage collector current (DC) peak
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bc 187 npn transistor TRANSISTOR BC 187 transistor bc 102 on BC 187 TRANSISTOR TRANSISTOR BC 140 transistor BC 312

bc1417

Abstract: BC140-BC141 . P-N-P complements are BC160 and BC161. QUICK REFERENCE DATA BC140 BC141 Collector-emitter voltage , lc = 50 mA; VCg = 10 V *T > 50 MHz BC140-10 BC140-16 BC141-10 BC141-16 D.C. current gain , . < typ. < typ. < typ. < > < < BC140 BC141 Collector-base voltage (open emitter) VCBO max. 80 , K/W K/W nA nA (iA /*A V V V V MHz pF pF BC140-10 BC140-16 D.C. current gain BC141 , BC140 BC141 IAPX CHARACTERISTICS (continued) Tamb = ° Switching times lCon= 100mA;lBon = -|Boff
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bc1417 BC 545 tfk 545 bc 140 S45C

transistor BC 153

Abstract: transistor C719 BC140, -6, -10, -16 BC141, -6, -10, -16 TO-39 Medium power amplifier & switching applications Complementary BC160 & BC161 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC140 VCE0 40 Collector -Emitter , Specified) DESCRIPTION SYMBOL BC140 VCES VCE=100uA, VBE=0 >80 Collector -Emitter Voltage VCEO* IC , Current Ta=150 deg C VCE=60V, VBE=0 hFE* IC=100mA,VCE=1V DC Current Gain BC140,BC141 Group-6 Group-10 Group-16 IC=1A,VCE=1V BC140,BC141 Group-6 Group-10 Group-16 Collector Emitter Saturation Voltage
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62702-C228-S2 62702-C236 transistor C719 TRANSISTOR C236 transistor BC 153 a c236 transistor transistor bc 100 0Q043 60203-X 60203-X140-V6 60203-X140-P 140/BC160

bc140

Abstract: transistor Bc 141 3 QE J> m 7 ^ 2 3 7 0 Q3 a ô b 7 1 r z 7 SGS-THOMSON ^ 7 # MO(gfô(m[l(m®«i S G S- TH OM SON BC140 BC141 GENERAL PURPOSE TRANSISTORS D E S C R IP T IO N The BC140 and BC141 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are par ticularly designed for audio amplifiers and switching applications up to 1 A. The complementary PNP types are the BC160 and BC161. IN T E R N A L S C H E M A T IC D IA G R A M A B S O L U T E M A X IM U M R A T IN G S Sym
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I3C140
Showing first 20 results.