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BC108 Datasheet

Part Manufacturer Description PDF Type
BC108 Central Semiconductor NPN Silicon Transistor Original
BC108 Philips Semiconductors NPN general purpose transistors Original
BC108 Philips Semiconductors Small-signal Transistors Original
BC-108 Philips Semiconductors NPN general purpose transistors Original
BC108 Semelab General Purpose Small Signal NPN Bipolar Transistor Original
BC108 STMicroelectronics LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS Original
BC108 STMicroelectronics LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS Original
BC108 Bharat Electronics Transistor Selection Guide Scan
BC108 Continental Device India Semiconductor Device Data Book 1996 Scan
BC108 Crimson Semiconductor Transistor Selection Guide Scan
BC108 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BC108 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
BC108 Ferranti Semiconductors Shortform Data Book 1971 Scan
BC108 Infineon Technologies TRANS GP BJT NPN 20V 0.1A 3TO-18 Scan
BC108 ITT Semiconductors Transistors 1980 Scan
BC108 ITT Semiconductors Semiconductor Summary 1969 Scan
BC108 Micro Electronics Semiconductor Device Data Book Scan
BC108 Micro Electronics NPN SILICON PLANAR EPITAXIAL TRANSISTOR Scan
BC108 Micro Electronics Low Level and General Purpose Amplifiers Scan
BC108 Micro Electronics Semiconductor Devices Scan
Showing first 20 results.

BC108

Catalog Datasheet MFG & Type PDF Document Tags

BC107 characteristic

Abstract: BC107 BC107, BC108, BC109 NPN Silicon Epitaxial Planar Transistors for switching and amplifier , BC107 is available in groups A and B, type BC108 in groups A, B and C, and type BC109 in groups B and C , Voltage BC107 VcES 50 V BC108, BC109 Vces 30 V Collector Emitter Voltage BC107 Vceo 45 V BC108, BC109 Vceo 25 V Emitter Base Voltage BC107 Vebo 6 V BC108, BC109 Vebo 5 V Collector Current lc 100 mA , 0.35 g Dimensions in mm 20 BC107, BC108, BC109 Characteristics at Tamb = 25 °C Symbol Min. Typ
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OCR Scan
BC107 characteristic BC108 characteristic BC109 characteristic bc109 gain BC109 am Transistor BC107

BC107

Abstract: bc109 BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and , 40 V T amb = 150 °C for BC108-BC 1 0 9 V CB = 20 V T amb = 150 °C V CB = 20 V µA µA for BC107 for BC108 for BC109 50 30 30 V V V for BC107 for BC108 for BC109 45 20 20 V V V for BC107 for BC108 for BC109 6 5 5 V V V V CE = 5 V for BC107 for BC107 , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BC107 BC108 BC109 Unit V CBO
STMicroelectronics
Original
BC107-BC108-BC109 bc109 equivalent BC107 equivalent BC107 equivalent transistors BC107 DATASHEET bc108 equivalent BC177 BC178 BC179

BC107

Abstract: BC108 BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are , Value Unit BC107 BC108 V CBO Collector-Base Voltage (IE = 0) 50 30 V CEO , W W -55 to 175 o C 175 o C 1/6 BC107/BC108 THERMAL DATA R t hj-ca se R t , o 15 15 nA µA o for BC107 V CB = 40 V V CB = 40 V for BC108 V CB = 20 V V CB = 20 , Breakdown Voltage (IE = 0) I C = 10 µA for BC107 for BC108 50 30 V V V ( BR)CEO
STMicroelectronics
Original
of BC107 audio BC108 BC108 DATASHEET bc108 IC BC-107 BC-1086 BC107/BC108

BC107-BC108-BC109

Abstract: BC107 Tr SGS-THOMSON IM D oe isillL IC T IË iiM Û S BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO , < 25 °C St T c as e - 25 °C Storage T em pe rature Junction T em pe rature 50 45 6 V alu e Un it BC108 , r fo r lc = 10 |uA V ce = 5 BC107 BC107 BC107 BC108 BC108 BC108 BC108 BC109 BC109 BC109 V ce = 5 fo , BC107 BC107 BC107 BC108 BC108 BC108 BC108 BC109 BC109 BC109 250 190 300 370 190 300 500 370 300 550 2 V
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BC107 Tr bc108 TO-92

BC109

Abstract: BC107 Vcb =40 V Tamb = 150 °C 15 HA for BC108-BC 109 Vcb = 20 V 15 HA Vcb =20 V Tamb = 150 °C 15 HA V(br)cbo Collector-base lc = 10 nA for BC107 50 V Breakdown Voltage for BC108 30 , 3QE T> m 7^2TE3? 0030055 5 â  -~- _ l - l l SGS-THOMSON BC107 _BC108-BC109 S G S-TH0MS0N LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and BC109 are silicon planar , Symbol Parameter Value Unit BC107 BC108 BC109 VcBO Collector-base Voltage (lE =0) 50 30 30 V VcEO
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BC103 BC-108-2 BC 55 r7 bc 109

Transistor BC107

Abstract: BC109 BC107 BC108 BC109 MECHANICAL DATA Dimensions in mm (inches) GENERAL PURPOSE SMALL SIGNAL , (TA = 25°C unless otherwise stated) VCBO BC017 50V BC108, BC109 VCEO Collector ­ Base , BC108, BC109 VCES 20V Collector ­ Emitter Continuous Voltage With Base Shortcircuited to Emitter BC107 BC108, BC109 Emitter ­ Base Continuous Voltage Reverse Voltage 30V BC107 6V BC108 , ://www.semelab.co.uk 3/99 BC107 BC108 BC109 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated
Semelab
Original
TRANSISTOR bc108 TRANSISTOR bc109 bc107 transistor BC107 pin BC108 transistor bipolar transistor bc107 100MH

BC107

Abstract: bc109 BC108-BC 109 Tamb - 150 °C 15 50 30 30 45 20 20 6 5 5 70 200 550 650 700 750 900 110 110 200 110 110 , IP T IO N The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal , ebo Param eter Collector-base Voltage (Ie Value BC107 50 45 6 BC108 30 20 5 100 0.3 0.75 - , = 10 (lA for BC107 for BC108 for BC109 for BC107 for BC108 for BC109 for BC107 for BC108 for , cn < = 2 mA for for for for for for for for for for BC107 BC107 BC107 BC108 BC108 BC108
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T BC109 c109s

Transistor BC109

Abstract: 8C109 =5.0V, lc=2.0mA (BC107A, BC108A) Vce=5.0V, Iq=2.0mA (BC107B, BC108B, BC109B) VCE=5.0V, lc=2.0mA (BC108) VCE , =100mA, Ig=5.0mA VCE=5.0V, lc=2.0mA VCE=5.0V, ic=1oya (BC107.A, BC108,A) VCE=5.0V, IC=1OyA (BC107B, BC108B , =5.0V, Ic=2.0mA, f = 1 .0kHz (BC107A, BC108A) 190 hfe VCE=5.0V, Iq-2.0mA, f = l .OkHz (BC107B, BC108B , Manufacturers of World Class Discrete Semiconductors BC107,A,B BC108,A,B,C BC109,B,C NPN SILICON TRANSISTOR , , BC108, BC109 series types are silicon NPN small signal transistors manufactured by the epitaxial planar
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8C109 applications of Transistor BC108 bc109c BC109C datasheet DATASHEET Transistor BC109 symbol transistor BC108 BC109C

KLC-6

Abstract: BC107 TRANZYSTORY n-p-n BC107, BC108 i BC109 1 1-74/2 SWW 1156-211 Tranzystory krzemowe epiplanarne malej mocy malej czçstotliwoêci. Tranzystory BC107 i BC108 przeznaczone do stosowa-nia w , sto-sowania we wzmacniaczach m.cz. o niskim poziomie szu-môw. Tranzystory BC107, BC108 i BC109 sq , dopuszczalne parametrôw eksploatacyjnych Typ BC107 BC108 BC109 Napiçcle kolektor-baza Ucbo 45 20 20 V , Pojemnoáé zl^cza BC108 / emitera przy Veb = 0,5 V, Parametry statyezne / = 1 MHz CE â
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KLC-6 T018 Kl 102 M tranzystory cemi tranzystor T225-

bc 5411

Abstract: BC107 pin configuration 200 Page 3 BC107A NPN TO-18 BC107B BC108 BC108B BC108C 20/04/06 V1.0 BC107 , BC107/BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature , 1 20/04/06 V1.0 BC107/BC108 Series Low Power Bipolar Transistors Absolute Maximum Ratings Description Symbol BC107 BC108 Collector-Emitter Voltage VCEO 45 25 Collector-Base , VCE (Sat) Base Emitter On Voltage VBE (on) Maximum IC = 2mA, IB = 0 BC107 BC108 45
Multicomp
Original
bc 5411 BC107 pin configuration BC108 pin configuration bc108b equivalent DATASHEET Transistor BC107 specification of transistor bc 107

TRANSISTOR bc107 current gain

Abstract: bc107a current DC current gain BC107A; BC108A BC107B; BC108B; BC109B BC108C; BC109C DC current gain BC107A; BC108A BC107B; BC108B; BC109B BC108C; BC109C CONDITIONS Ie = 0; VCB = 20 V lE = 0; VCB = 20 V; T j = , frequency noise figure BC109B; BC109C noise figure BC107A; BC108A BC107B; BC108B; BC108C BC109B; BC109C lc , 2 3 BC107; BC108; BC109 DESCRIPTION emitter base collector, connected to the case QUICK REFERENCE DATA SYMBOL VcBO BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Plot hFE
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TRANSISTOR bc107 current gain BC109c transistor transistor TO-92 bc108 transistor bc107b BC108B transistor bc107 applications

Transistor BC107

Abstract: BC107 pin configuration PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise , SYMBOL VCEO BC107 45 BC108 25 BC109 25 UNIT V Collector Base Voltage VCBO 50 , Current BC107 >45 BC108 >25 BC109 >25 UNIT V >6 >5 >5 V , C Group IC=2mA, VCE=5V BC107 BC108 BC109 A Group B Group C Group nA , PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package ELECTRICAL
Continental Device India
Original
CDIL BC107 bc108 pin details CDIL BC108 ISO/TS16949 BC108/A/B/C C-120 231202E

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain \ \ 4 BC107, BC108. BC109 100 200 "0 KM )0"6 10'5 K)'4 10~3 10"2 10*' 10° 101s -"t Collector current Iq = f (Vee) Vce = 5 V (common emitter configuration) BC107. BC108, BC109 Input , parameter (common emitter configuration) BC107. BC108. BC 109 Base-emitter saturation voltage VeEsat= f , » Q62702-C680 BC 107 A Q60203-X107-A BC 107 B Q60203-X107-B BC 1081' Q60203-X108 BC108 A Q60203-X108-A BC , emitter configuration) ÃIA 1000 800 600 400 200 BC107. BC108, BC109 f 4,0 (UA â'"3 ; H â'" r
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TRANSISTOR BC 137 transistor bc 138 bc 104 npn transistor XL08 bc 107 npn transistor ASC 108 BC1071 Q60203-X108-B Q60203-X108-C 060203-X109 Q60203-X109-B Q60203-X109-C

bc108b

Abstract: bc109c ) 110 VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200 VCE=5.0V, IC=2.0mA (BC108C, BC109C) 420 TYP , =2.0mA, f=1.0kHz (BC107B, BC108B, BC109B) 240 hfe VCE=5.0V, IC=2.0mA, f=1.0kHz (BC108C) hfe VCE=5.0V, IC , BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon , BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 UNITS V V V mA mW °C °C/W
Central Semiconductor
Original
Transistor BC107 NPN for transistor bc107

BC107 pin configuration

Abstract: BC109 characteristic SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise , SYMBOL VCEO BC107 45 BC108 25 BC109 25 UNIT V Collector Base Voltage VCBO 50 , Current BC107 >45 BC108 >25 BC109 >25 UNIT V >6 >5 >5 V , C Group IC=2mA, VCE=5V BC107 BC108 BC109 A Group B Group C Group nA , PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package ELECTRICAL
Continental Device India
Original
BC109 pin configuration CDIL BC109
Abstract: THERMAL RESISTANCE Junction to Case SYMBOL VCEO VCBO VEBO IC PD BC107, A, B, C BC108, A, B, C BC109, A, B, C TO-18 BC107 45 50 6.0 Tj, Tstg BC108 25 30 5.0 0.2 0.6 2.28 1.0 6.67 , Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=2mA,IB=0 Collector -Emitter Voltage BC107 BC108 , BC108/109 6.0 5.0 Collector-Cut off Current ICBO VCB=45V, IE=0 VCB=25V, IE=0 Tamb=125 deg C VCB=45V, IE=0 VCB=25V, IE=0 BC107 BC108/109 - 15 15 nA nA BC107 BC108/109 Continental Device India
Original
BC108/109

CDIL BC107

Abstract: BC107 pin configuration SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise , SYMBOL VCEO BC107 45 BC108 25 BC109 25 UNIT V Collector Base Voltage VCBO 50 , =0 Collector Cut Off Current BC107 >45 BC108 >25 BC109 >25 UNIT V >6 >5 >5 V , =10µA, VCE=5V B Group C Group IC=2mA, VCE=5V BC107 BC108 BC109 A Group B Group C Group nA , PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package ELECTRICAL
Continental Device India
Original
bc107 pin application bc109 application bc109a BC107-109 bc107 bc108 bc109

TRANSISTOR bc108

Abstract: BC107 Transistor application notes noise figure BC107A; BC108A BC107B; BC108B; BC108C BC109B; BC109C Notes 1. VBEsat decreases by , ; BC108B; BC109B 40 150 - 100 270 - BC107A; BC108A 110 180 220 BC107B , DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , BC107 50 V BC108; BC109 - 30 V BC107 - 45 V BC108; BC109 - 20
Philips Semiconductors
Original
BC107 Transistor application notes transistor BC107 specifications BC108B application note TRANSISTOR DATASHEET BC107B MAM264 SCA54

BC107 pin configuration

Abstract: BC109 pin configuration 150 600 TO-18 BC108B BC108C 30 BC109 240 4 BC109B BC109C Page 4 30/05/05 , BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar , Pin Configuration 1. Emitter. 2. Base. 3. Collector. Page 1 30/05/05 V1.0 BC107/ BC108/ BC109 Low Power Bipolar Transistors Absolute Maximum Ratings DESCRIPTION SYMBOL BC107 BC108 , BC107 BC108/109 45 20 V V Emitter-Base Voltage VEBO IE = 10uA, IC = 0 BC107 BC108
Multicomp
Original
BC109C pin configuration bc107a pin out bc108 pin out bc107 connections BC107 frequency range BC107 pin out BC108/

transistor BC107 specifications

Abstract: BC107 Transistor application notes figure BC107A; BC108A BC107B; BC108B; BC108C BC109B; BC109C Notes 1. VBEsat decreases by about 1.7 , µA IC = 0; VEB = 5 V - - 50 nA BC107A; BC108A - 90 - BC107B; BC108B; BC109B 40 150 - BC108C; BC109C 100 270 - BC107A; BC108A 110 180 220 , DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max
Philips Semiconductors
Original
BC108 operation EQUIVALENT TRANSISTOR bc108 BC109B equivalent SCA55

ZO 109

Abstract: BC 107 Gr. B 2.7 x10-4 â'" for BC108 Gr. C 3.8 x10-4 â'" for BC 109 3.1 x 10-4 â'" for BC
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OCR Scan
ZO 109 BC 107 bc 108 X10-4 bc 230 zo 107 BC10I7

bc 303 transistor

Abstract: BC 109 Transistor BC107, BC108, BC109 NPN Silicon Epitaxial Planar Transistors for switching and amplifier , BC107 is available in groups A and B, type BC108 in groups A, B and C, and type BC109 in groups B and C , Voltage BC107 VcES 50 V BC108, BC109 Vces 30 V Collector Emitter Voltage BC107 Vceo 45 V BC108, BC109 Vceo 25 V Emitter Base Voltage BC107 Vebo 6 V BC108, BC109 Vebo 5 V Collector Current lc 100 mA , 0.35 g Dimensions in mm 20 BC107, BC108, BC109 Characteristics at Tamb = 25 °C Symbol Min. Typ
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bc 303 transistor BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107

BC109

Abstract: bc107 r z 7 S G S -m O M S O N ^ 7 # [ïffloeÅ"iiLnera®«® BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors , e r a t u re November 1997 -55 t o 175 175 1/6 BC107/BC108 THERMAL DATA R th j-ca se , /BC108 ELECTRICAL CHARACTERISTICS (continued) Sym bol P a ra m e te r T e s t C o n d itio n s , 3/6 BC107/BC108 Collector-base Capacitance. Transition Frequency. Power Rating Chart
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bc 750 bc audio transistors BC-1096
Abstract: BC107/BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature , 1 20/04/06 V1.0 BC107/BC108 Series Low Power Bipolar Transistors Absolute Maximum Ratings Description Symbol BC107 BC108 Collector-Emitter Voltage VCEO 45 25 Collector-Base , VCE (Sat) Base Emitter On Voltage VBE (on) Maximum IC = 2mA, IB = 0 BC107 BC108 45 25 IE = 10µA, IC = 0 BC107 BC108 6.0 5.0 Unit - VCB = 45V, IE = 0 BC107 BC108 -
OCR Scan
Showing first 20 results.