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Part : BAY80 | Supplier : Fairchild Semiconductor | Manufacturer : Rochester Electronics | Stock : 550 | Best Price : $0.02 | Price Each : $0.02 |
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BAY80 Datasheet
Part | Manufacturer | Description | Type | |
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BAY80 | EIC Semiconductor | High Speed Switching Diodes |
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Original |
BAY80 | Philips Semiconductors | General purpose diode |
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Original |
BAY80 | Philips Semiconductors | General Purpose Diode |
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Original |
BAY80 | Vishay Intertechnology | Silicon Epitaxial Planar Diode |
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Original |
BAY80 | Vishay Semiconductors | Switching Diode |
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Original |
BAY80 | Fairchild Semiconductor | General Purpose High Conductance Diodes |
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Scan |
BAY80 | N/A | Basic Transistor and Cross Reference Specification |
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Scan |
BAY80 | N/A | Shortform Semicon, Diode, and SCR Datasheets |
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BAY80 | N/A | Catalog Scans - Shortform Datasheet |
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BAY80 | N/A | Cross Reference Datasheet |
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Scan |
BAY80 | N/A | Diode, Transistor, Thyristor Datasheets and more |
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Scan |
BAY80 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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BAY80 | N/A | Shortform Data and Cross References (Misc Datasheets) |
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BAY80 | National Semiconductor | Pro Electron Diode Series |
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Scan |
BAY80 | National Semiconductor | Diode Pro Electron Series |
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BAY80 | National Semiconductor | High Voltage Diodes |
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BAY80 | National Semiconductor | Silicon Single Junction Diodes |
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Scan |
BAY80 | National Semiconductor | Diode - Pro Electron Series |
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Scan |
BAY80 | Philips Semiconductors | General Purpose Diode |
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Scan |
BAY80 | Thomson-CSF | Condensed Data Book 1977 |
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Scan |
Showing first 20 results. Show More |
BAY80
Catalog Datasheet | MFG & Type | Document Tags | |
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Diode BAY80Abstract: BAY80 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAY80 General purpose diode Product , General purpose diode BAY80 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD27 (DO-35) package The BAY80 is a switching diode fabricated in planar technology, and encapsulated in the , BAY80 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER , Sep 18 3 Philips Semiconductors Product specification General purpose diode BAY80 |
Philips Semiconductors Original |
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MAM246 Diode BAY80 MLA428 |
BAY80Abstract: BAY80 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 General purpose Order Instruction Type Type Differentiation BAY80 VRRM = 150 V Ordering Code BAY80TAP BAY80TR Remarks Ammopack Tape and Reel Absolute Maximum , (4) BAY80 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage , Current vs. Forward Voltage Document Number 85553 Rev. 3, 14-Feb-01 BAY80 rf Differential |
Vishay Telefunken Original |
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88/540/EEC 91/690/EEC D-74025 |
Abstract: k/box Parts Table Part BAY80 Ordering code BAY80-TR or BAY80-TAP Type Marking BAY80 Remarks Tape , BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features · Silicon Epitaxial Planar Diode · AEC-Q101 qualified · Compliant to RoHS directive 2002/95/EC and in accordance to , , DiodesEurope@vishay.com www.vishay.com 1 BAY80 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C , -Aug-10 BAY80 Vishay Semiconductors Package Dimensions in millimeters (inches): DO-35 Cathode identification |
Vishay Semiconductors Original |
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2002/96/EC TR/10 TAP/10 |
Abstract: ), 50 k/box 94 9367 Parts Table Part BAY80 Type differentiation VRRM = 150 V Ordering code BAY80-TR or BAY80-TAP Remarks Tape and Reel / Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless , VISHAY BAY80 Vishay Semiconductors Switching Diode Features · Silicon Epitaxial Planar , K/W °C °C Document Number 85553 Rev. 1.6, 31-Mar-04 www.vishay.com 1 BAY80 Vishay , -Mar-04 VISHAY Package Dimensions in mm (Inches) BAY80 Vishay Semiconductors Cathode Identification |
Vishay Semiconductors Original |
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BAY80Abstract: MAM246 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAY80 General purpose diode Product , Philips Semiconductors Product specification General purpose diode BAY80 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD27 (DO-35) package The BAY80 is a switching diode , BAY80 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL 550 mV 650 , diode BAY80 GRAPHICAL DATA MBG449 300 MBG460 600 handbook, halfpage handbook |
- Original |
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103fdAbstract: 50N13 Philips Semiconductors Product specification General purpose diode BAY80 FEATURES â , '¢ Repetitive peak forward current: max. 625 mA. DESCRIPTION The BAY80 is a switching diode fabricated in , Semiconductors Product specification General purpose diode BAY80 ELECTRICAL CHARACTERISTICS Tj = 25 °C , Manufacturer Philips Semiconductors Product specification General purpose diode BAY80 GRAPHICAL DATA 300 , Philips Semiconductors Product specification General purpose diode BAY80 10" MQD009 100 Tj (°C |
- OCR Scan |
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103fd 50N13 ulm28 ULM28-1 |
Abstract: BAY80_ Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current , BAY80_ Vishay Telefunken IF - Forw ard C urrent ( mA ) Figure 3. Differential Forward , 85553 Rev. 2, 01-Apr-99 _ BAY80 Vishay Telefunken Electrical Characteristics Ti = 25 |
- OCR Scan |
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Abstract: BAY80 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 General purpose Order Instruction Type Type Differentiation BAY80 VRRM = 150 V Ordering Code BAY80â'"TAP BAY80â'"TR Remarks Ammopack Tape and Reel Absolute , K/W www.vishay.com 1 (4) BAY80 Vishay Telefunken Electrical Characteristics Tj = 25 , 85553 Rev. 3, 14-Feb-01 BAY80 W rf â'" Differential Forward Resistance ( ) Vishay |
Vishay Intertechnology Original |
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BAY80Abstract: BAY80-TAP code BAY80 BAY80-TR or BAY80-TAP Type Marking Remarks BAY80 Tape and Reel/Ammopack , BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features · Silicon , RthJA 350 K/W Tj + 175 °C Tstg - 65 to + 175 °C www.vishay.com 1 BAY80 , -Feb-07 BAY80 Vishay Semiconductors Package Dimensions in millimeters (inches): DO35 3.9 max. (0.154) 26 , 85553 Rev. 1.8, 19-Feb-07 www.vishay.com 3 BAY80 Vishay Semiconductors Ozone Depleting |
Vishay Semiconductors Original |
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DO35 |
Abstract: k/box Parts Table Part BAY80 Ordering code BAY80-TR or BAY80-TAP Type Marking BAY80 Remarks Tape , BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features · Silicon Epitaxial Planar Diode · AEC-Q101 qualified · Compliant to RoHS directive 2002/95/EC and in accordance to , , DiodesEurope@vishay.com www.vishay.com 1 BAY80 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C , -Aug-10 BAY80 Vishay Semiconductors Package Dimensions in millimeters (inches): DO-35 Cathode identification |
Vishay Semiconductors Original |
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BAY80Abstract: BAY80-TAP code BAY80 Type Marking Remarks BAY80 Tape and Reel/Ammopack BAY80-TAP or BAY80-TR , BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features · Silicon , RthJA 350 K/W Tj + 175 °C Tstg - 65 to + 175 °C www.vishay.com 1 BAY80 , -Jul-06 BAY80 Vishay Semiconductors Package Dimensions in mm (Inches): DO35 26 min. [1.024] 3.9 max , Document Number 85553 Rev. 1.7, 24-Jul-06 www.vishay.com 3 BAY80 Vishay Semiconductors Ozone |
Vishay Semiconductors Original |
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BAY80-TAPAbstract: BAY80-TR code BAY80 BAY80-TR or BAY80-TAP Type Marking Remarks BAY80 Tape and Reel/Ammopack , BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features · Silicon , RthJA 350 K/W Tj + 175 °C Tstg - 65 to + 175 °C www.vishay.com 1 BAY80 , -Feb-07 BAY80 Vishay Semiconductors Package Dimensions in millimeters (inches): DO35 3.9 max. (0.154) 26 , 85553 Rev. 1.8, 19-Feb-07 www.vishay.com 3 BAY80 Vishay Semiconductors Ozone Depleting |
Vishay Semiconductors Original |
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Abstract: k/box Parts Table Part BAY80 Ordering code BAY80-TR or BAY80-TAP Type Marking BAY80 Remarks Tape , BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features · Silicon Epitaxial Planar Diode · AEC-Q101 qualified · Compliant to RoHS directive 2002/95/EC and in accordance to , , DiodesEurope@vishay.com www.vishay.com 1 BAY80 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C , -Aug-10 BAY80 Vishay Semiconductors Package Dimensions in millimeters (inches): DO-35 Cathode identification |
Vishay Semiconductors Original |
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2011/65/EU |
Abstract: 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART BAY80 ORDERING CODE BAY80-TR or BAY80-TAP TYPE MARKING BAY80 INTERNAL CONSTRUCTION Single diode REMARKS Tape and , BAY80 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAY80 www.vishay.com Vishay Semiconductors TEST , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAY80 www.vishay.com PACKAGE |
Vishay Semiconductors Original |
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TR/10K |
Abstract: CONSTRUCTION REMARKS BAY80 BAY80-TR or BAY80-TAP BAY80 Single diode Tape and reel/ammopack , BAY80 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES â'¢ Silicon epitaxial planar diode â'¢ AEC-Q101 qualified â'¢ Material categorization:ï' For , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAY80 www.vishay.com Vishay , ?91000 BAY80 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): DO |
Vishay Semiconductors Original |
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JS709A |
BAY80Abstract: BAY80 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 General purpose Order Instruction Type Type Differentiation BAY80 VRRM = 150 V Ordering Code BAY80TAP BAY80TR Remarks Ammopack Tape and Reel Absolute Maximum , (4) BAY80 Vishay Semiconductors Electrical Characteristics Tj = 25_C Parameter Forward , . Forward Current vs. Forward Voltage Document Number 85553 Rev. 3, 14-Feb-01 BAY80 W rf |
Vishay Semiconductors Original |
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diode 334Abstract: BAY80 N AMER PHILIPS/DISCRETE b^E D â tbS3R31 DQ2b37fl 712 BAY80 IAPX I GENERAL PURPOSE DIODE Silicon planar epitaxial diode in DO-35 envelope; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. QUICK REFERENCE DATA Reverse recovery time when switched from lF = 30 mA to Ir = 30 mA; RL= 100 S2 , Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BAY80 blE J> bbSBIBl OOHbB?11! bSI IAPX |
- OCR Scan |
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diode 334 S3R31 |
BAY80Abstract: BAY80 Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward , =4mm, TL=constant 1 (4) BAY80 Characteristics Tj = 25_C Parameter Forward voltage g Reverse current , TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 rf Differential Forward Resistance (W ) BAY80 1000 , . 3.9 max. 26 min. 3 (4) BAY80 Ozone Depleting Substances Policy Statement It is the policy |
Temic Semiconductors Original |
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BAY80Abstract: BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse , 350 Unit K/W www.vishay.de · FaxBack +1-408-970-5600 1 (4) BAY80 Vishay Telefunken , Voltage Document Number 85553 Rev. 2, 01-Apr-99 BAY80 rf Differential Forward Resistance (W , ) BAY80 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay |
Vishay Telefunken Original |
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Abstract: -Apr-99 www.vishay.de · FaxBack +1 -408-970-5600 1 (4) rnmmf , vfS H A Y BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications G eneral purpose 94 9367 Absolute Maximum Ratings Tj = 2 5 °C Param eter R epetitive peak reverse voltage R , FaxBack+1-408-970-5600 2(4) Document Number 85553 Rev. 2, 01-Apr-99 wmmr _ BAY80 Vishay , -408-970-5600 3(4) BAY80 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of |
- OCR Scan |
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Abstract: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features · Silicon Epitaxial Planar Diode · AEC-Q101 qualified · Compliant to RoHS directive 2002/95/EC and in accordance to , k/box Parts Table Part BAY80 Ordering code BAY80-TR or BAY80-TAP Type Marking BAY80 Remarks Tape , , DiodesEurope@vishay.com www.vishay.com 1 BAY80 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C , -Aug-10 BAY80 Vishay Semiconductors Package Dimensions in millimeters (inches): DO-35 Cathode identification |
Vishay Semiconductors Original |
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Abstract: VISHAY BAY80 Vishay Semiconductors Switching Diode Features · Silicon Epitaxial Planar , ), 50 k/box 94 9367 Parts Table Part BAY80 Type differentiation VRRM = 150 V Ordering code BAY80-TR , K/W °C °C Document Number 85553 Rev. 1.6, 31-Mar-04 www.vishay.com 1 BAY80 Vishay , -Mar-04 VISHAY Package Dimensions in mm (Inches) BAY80 Vishay Semiconductors Cathode Identification , . Document Number 85553 Rev. 1.6, 31-Mar-04 www.vishay.com 3 BAY80 Vishay Semiconductors Ozone |
Vishay Semiconductors Original |
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Diode BAY 80Abstract: Diode BAY 72 DE I 341,^74 00575^ H FAIRCHILD SEMICONDUCTOR S4 3469674" FAIRCHILID" SEMICONDUCTOR " 84D 27296 D m BAY72/BAY80 r7 General Purpose High FAIRCHILD A Schlumberger Company Conductance Diodes â'¢ VF. 1.0V (MAX) @ 100 mA (BAY72) â'¢ Vf . 1.0V (MAX) @ 150 mA (BAYBO) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead , (surge) peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 its PACKAGES BAY72 BAY80 DO-35 DO |
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Diode BAY 80 Diode BAY 72 34696 BAY 80 diode BAY72/BAY80 |
Showing first 20 results. Show More |