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  1 - 2 of about 2 for BAW101S   
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 1.   BAW101S T/R  BAW101S T/R NXP Semiconductors / Philips Semiconductors   High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1100@IF=100mA mV; V     Latest Datasheet  
 2.   BAW101S  BAW101S Philips Semiconductors / NXP Semiconductors   High Voltage Double Diode 61.38 Kb  12 Pg.    

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1. Datasheet Text Contains BAW101S
61.38 Kb  •  12 Pages

Abstract: ... BAW101S High voltage double diode. book, halfpage. MBD128. 2003 May 13 2. Philips Semiconductors Product specification. High voltage double diode BAW101S. FEATURES. • Small plastic SMD package. • High ...

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