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BAT62-09S Datasheet

Part Manufacturer Description PDF Type
BAT62-09S Infineon Technologies Silicon Schottky Diode Original
BAT62-09S Infineon Technologies Silicon Schottky Diode Original
BAT62-09S Kexin Silicon Schottky Diode Original
BAT62-09S TY Semiconductor Silicon Schottky Diode - SOT-363 Original
BAT62-09SE6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 20MA SOT-363 Original

BAT62-09S

Catalog Datasheet MFG & Type PDF Document Tags

smd diode marking Av

Abstract: diode BAT62 Diodes SMD Type Silicon Schottky Diode BAT62-08S;BAT62-09S SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features 0.36 Low barrier diode for detectors up to GHz frequencies 0.1max +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 , +150 Junction - soldering point 1) R thJS BAT62-08S BAT62-09S 450 K/W tbd Note 1 , ultiple diode com ponent. Marking Type BAT62-08S BAT62-09S Marking 62s 69s
Kexin
Original
smd diode marking Av diode BAT62 bat62 smd marking AV SOT363 SOT-363 marking 05 smd marking AL
Abstract: Product specification BAT62-08S;BAT62-09S SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features 0.36 Low barrier diode for detectors up to GHz frequencies 0.1max +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maxim , soldering point 1) R thJS BAT62-08S BAT62-09S 450 K/W tbd Note 1.For calculation of R thJA , com ponent. Marking Type BAT62-08S BAT62-09S Marking 62s 69s http TY Semiconductor
Original

BAT62-02V

Abstract: 2 #31; 1 2 BAT62-09S $ " # , , #31; #31; ! ESD (Electrostatic discharge , -02V BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S Package SCD80 SOT143 TSLP-2-1 TSSLP-2-1 SC79 SOD323 , °C 100 BAT62-09S, TS ≤ 105 °C Unit 100 Junction temperature Storage temperature , -02W, 02V ≤ 410 BAT62-07W ≤ 470 BAT62-09S Unit ≤ tbd Electrical Characteristics
Infineon Technologies
Original
BAT62-02V BAT62-02L BAT62-02LS

BAT62-07L4

Abstract: BAT62 D 1 2 2 1 BAT62-09S 4 5 D 2 D 1 1 BAT62-08S D 2 6 D 3 1 2 , -08S BAT62-09S* Package SOT143 TSLP-2-1 SCD80 SOD323 TSLP-4-4 SOT343 SOT363 SOT363 , BAT62-08S, BAT62-09S, TS BAT62-07L4, TS BAT62-02W, TS Unit 100 BAT62 , BAT62 BAT62-02W BAT62-07L4 BAT62-07W BAT62-08S BAT62-09S Unit K/W BAT62
Infineon Technologies
Original
TP-101 900MH

BAT62

Abstract: BAT62-02L BAT62. Silicon Schottky Diode · Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-08S 6 4 3 D 2 D 1 D 1 2 2 1 BAT62-09S 4 5 D 1 1 1 BAT62-07W BAT62-07L4 D 2 6 D 3 1 2 D 2 , -08S BAT62-09S* Package SOT143 TSLP-2-1 SCD80 SOD323 TSLP-4-4 SOT343 SOT363 SOT363 , BAT62-02W 410 BAT62-07W 470 BAT62-08S 450 BAT62-09S tbd Electrical
Infineon Technologies
Original

bat62-03w

Abstract: BAT62 -03W BAT62-07W ! , " BAT62-09S $ ! , , , , 1 " # , -02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S Package SOT143 TSLP-2-1 TSSLP-2-1 SCD80 SOD323 TSLP , 100 BAT62-09S, TS 105 °C 100 100 Junction temperature Storage temperature 150 Tj , BAT62-07W 470 BAT62-09S tbd Electrical Characteristics at TA = 25°C, unless otherwise
Infineon Technologies
Original
Abstract: D 1 2 2 1 BAT62-09S 4 5 D 2 D 1 1 BAT62-08S D 2 6 D 3 1 2 , -08S BAT62-09S* Package SOT143 TSLP-2-1 SCD80 SOD323 TSLP-4-4 SOT343 SOT363 SOT363 , BAT62-08S, BAT62-09S, TS #1; BAT62-07L4, TS #1; #1; #1; BAT62-02W, TS Unit 100 #1; #1; , BAT62 BAT62-02W BAT62-07L4 BAT62-07W BAT62-08S BAT62-09S Unit K/W #1; #1; #1; #1; #1; #1; #1; Infineon Technologies
Original
Abstract: BAT62. Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies #1; BAT62 4 BAT62-02L BAT62-02W BAT62-03W BAT62-07W BAT62-07L4 3 6 4 3 4 5 D 2 D 1 D 1 1 1 BAT62-08S D 1 2 2 1 BAT62-09S 6 D 2 D 3 1 2 , -08S BAT62-09S* Package SOT143 TSLP-2-1 SCD80 SOD323 TSLP-4-4 SOT343 SOT363 SOT363 , #1; #1; #1; #1; #1; #1; BAT62-02L, -07L4, -03W BAT62-02W BAT62-07W BAT62-08S BAT62-09S 650 420 Infineon Technologies
Original

bat62-03w

Abstract: BAT62. Silicon Schottky Diode · Low barrier diode for detectors up to GHz frequencies BAT62 " , BAT62-02W BAT62-03W ! , BAT62-07W " ! BAT62-09S $ # " , BAT62-02L BAT62 , -07L4 BAT62-07W BAT62-09S Package SOT143 TSLP-2-1 TSSLP-2-1 SCD80 SOD323 TSLP-4-4 SOT343 SOT363 Configuration , , -03W, TS 108 °C BAT62-02W, TS 109 °C BAT62-07W, TS 103 °C BAT62-09S, TS 105 °C Junction temperature , , -03W BAT62-02W BAT62-07W BAT62-09S Electrical Characteristics at TA = 25°C, unless otherwise specified
Infineon Technologies
Original

R0225

Abstract: bat62-02ls -02LS BAT62-07L4 4 3 " , ! D1 , , 1 2 D2 1 2 BAT62-09s $ # " , -02L BAT62-02LS* BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09s Package SOT143 TSLP-2-1 TSSLP-2-1 SCD80 , -07W, TS 103 °C BAT62-09S, TS 105 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAT62 BAT62-02L, -07L4, -03W BAT62-02W BAT62-07W BAT62-09S Electrical
Infineon Technologies
Original
R0225 BAT62-09

BAT62

Abstract: BAT62-02W BAT62. Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W BAT62-07W BAT62-07L4 3 6 4 3 4 5 D 2 D 1 D 1 1 1 BAT62-08S D 1 2 2 1 BAT62-09S 6 D 2 D 3 1 2 , -08S BAT62-09S* Package SOT143 TSLP-2-1 SCD80 SOD323 TSLP-4-4 SOT343 SOT363 SOT363 , BAT62-02L, -07L4, -03W BAT62-02W BAT62-07W BAT62-08S BAT62-09S 650 420 410 470 450 tbd
Infineon Technologies
Original

BAT62-02L

Abstract: BAT62 BAT62. Silicon Schottky Diode · Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-08S 6 4 3 D 2 D 1 D 1 2 2 1 BAT62-09S 4 5 D 1 1 1 BAT62-07W BAT62-07L4 D 2 6 D 3 1 2 D 2 , -08S BAT62-09S* Package SOT143 TSLP-2-1 SCD80 SOD323 TSLP-4-4 SOT343 SOT363 SOT363 , BAT62-02W 410 BAT62-07W 470 BAT62-08S 450 BAT62-09S tbd Electrical
Infineon Technologies
Original

BAT62

Abstract: BAT62-02L BAT62. Silicon Schottky Diode · Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-09S 6 4 3 1 D 1 2 2 1 D 2 , -02LS* BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S Package SOT143 TSLP-2-1 TSSLP-2-1 SCD80 , -02W, TS 109 °C 100 BAT62-07W, TS 103 °C 100 BAT62-09S, TS 105 °C 100 100 Junction , -02L, -07L4, -03W 420 BAT62-02W 410 BAT62-07W 470 BAT62-09S tbd Electrical
Infineon Technologies
Original

SOt323 marking code 6X

Abstract: E6327 Application BAT62. Silicon Schottky Diode · Low barrier diode for detectors up to GHz frequencies BAT62 BAT62-02L BAT62-02W BAT62-03W 3 D 2 BAT62-07W BAT62-07L4 4 3 BAT62-08S BAT62-09S 4 D 1 6 5 4 6 5 4 D 1 D 2 D 3 1 2 D 1 D 2 D 1 D 2 1 2 1 2 , precaution! Type BAT62 BAT62-02L* BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-08S BAT62-09S* Package , , -03W BAT62-02W BAT62-07W BAT62-08S BAT62-09S Electrical Characteristics at TA = 25°C, unless otherwise
Infineon Technologies
Original
SOt323 marking code 6X E6327 Application INFINEON diode MARK 22

cdma Booster schematic

Abstract: uwb transceiver Amplifier BAT62-09S, BAT63-07W © 2007 Infineon Technologies AG. All rights reserved. Page 18
Infineon Technologies
Original
cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094