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BAT 18-04 E6327 Infineon Technologies AG DIODE SWITCHING 35V 100MA SOT-23 visit Digikey Buy
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BAT18-04 Datasheet

Part Manufacturer Description PDF Type
BAT18-04 Infineon Technologies Low loss Switch Original
BAT18-04 Infineon Technologies Band Switching and RF Attenuation; Package: PG-SOT23-3; I<sub>F</sub> (max): 100.0 mA; C<sub>T</sub> (max): 1.0 pF; r<sub>F</sub> (typ): 0.4 Ohm; T<sub>rr</sub> (typ): 120.0 ns; Configuration: Dual; Original
BAT18-04 Infineon Technologies Silicon RF Switching Diode Original
BAT18-04 Kexin Silicon RF Switching Diode Original
BAT18-04 Siemens Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Original
BAT18-04 Siemens Cross Reference Guide 1998 Original
BAT18-04 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BAT18-04 TY Semiconductor Silicon RF Switching Diode - SOT-23 Original
BAT18-04E6327 Infineon Technologies Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 35V 100MA SOT23 Original
BAT18-04S Infineon Technologies PIN Diode for Bandswitching Original

BAT18-04

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Product specification BAT18;BAT18-04 BAT18-05;BAT18-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features Low-loss VHF/UHF switch above 10 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Pin diode with low forward resistance 1.Base 2.Emitter 3.collector Absolute , 0.4 0.7 Series inductance Ls 2 pF nH Marking Type BAT18 BAT18-04 BAT18 TY Semiconductor
Original

BAT18

Abstract: ASS infineon BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 3 BAT18-05 3 D 1 D 2 D 1 D 2 1 2 1 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS(nH) Marking 1.8 AUs 1.8 ASs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VR IF Tj Top , mA °C Value Unit Junction - soldering point1) BAT18-04, BAT18-05 1For 290 K/W
Infineon Technologies
Original
ASS infineon EHD07019 100MH EHD07020

DIODE marking A2

Abstract: smd A2 Diodes SMD Type Silicon RF Switching Diode BAT18;BAT18-04 BAT18-05;BAT18-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features Low-loss VHF/UHF switch above 10 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Pin diode with low forward resistance 1.Base 2 , Marking Type BAT18 BAT18-04 BAT18-05 BAT18-06 Marking A2 AU AS AT
Kexin
Original
DIODE marking A2 smd A2 smd diode A2 smd diode 1301 marking AU smd transistor marking A2 A2 diode

BAT18

Abstract: BAT18. Silicon RF Switching Diode · Low-loss VHF / UHF switch above 10 MHz · PIN diode with low forward resistance BAT18-04 ! BAT18-05 ! , , , , Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS(nH) Marking 1.8 AUs 1.8 ASs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current , - soldering point1) BAT18-04, BAT18-05 1For Value 35 100 150 -55 . 125 -55 . 150 Unit V
Infineon Technologies
Original

BAT18

Abstract: ASS infineon BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 3 BAT18-05 3 D 1 D 2 D 1 D 2 1 2 1 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS(nH) Marking 1.8 AUs 1.8 ASs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol VR IF Tj Top , mA °C Value Unit Junction - soldering point1) BAT18-04, BAT18-05 1For 290 K/W
Infineon Technologies
Original

bat18 a2

Abstract: top marking c2 sot23 BAT18.BAT18-05 Silicon RF Switching Diode 3 Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s 1=A 2 n.c. 3=C SOT23 BAT18-04 AUs 1 = A1 2 = C2 3 = C1 , Thermal Resistance Junction - soldering point1) RthJS K/W BAT18 370 BAT18-04, BAT18
Infineon Technologies
Original
bat18 a2 top marking c2 sot23 A2 SOT23 top marking 3c sot23 BAT18 marking A2 AUS SOT23

BAT18

Abstract: BAT18-05 BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 1 2 1 D 2 D 1 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS(nH) Marking 1.8 AUs 1.8 ASs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter , BAT18-04, BAT18-05 1For Value Unit 290 K/W Parameter calculation of RthJA please
Infineon Technologies
Original

bat18 diode

Abstract: marking AUs BAT18. Silicon RF Switching Diode · Low-loss VHF / UHF switch above 10 MHz · PIN diode with low forward resistance · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BAT18-04 BAT18-05 ! , ! , , , Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode Maximum Ratings at TA = 25°C, unless otherwise specified Parameter , Parameter Symbol Value Unit Junction - soldering point2) RthJS 290 K/W BAT18-04
Infineon Technologies
Original
bat18 diode marking AUs BCW66
Abstract: BAT18. Silicon RF Switching Diode â'¢ Low-loss VHF / UHF switch above 10 MHz â'¢ PIN diode with low forward resistance â'¢ Pb-free (RoHS compliant) package BAT18-04 BAT18-05 ! , #31; ! , #31; , #31; , #31; Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS(nH) 1.8 1.8 Marking AUs ASs Maximum Ratings at T A = 25°C, unless , Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 290 K/W BAT18-04 Infineon Technologies
Original

BAT18

Abstract: ASs infineon BAT18. Silicon RF Switching Diode · Low-loss VHF / UHF switch above 10 MHz · PIN diode with low forward resistance · Pb-free (RoHS compliant) package BAT18-04 ! BAT18-05 ! , , , , Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS(nH) 1.8 1.8 Marking AUs ASs Maximum Ratings at T A = 25°C, unless otherwise specified Parameter Diode reverse , -55 . 150 Unit V mA °C Junction - soldering point1) BAT18-04, BAT18-05 1For K/W
Infineon Technologies
Original

BF963

Abstract: 1N4004 SOD-123 BFN19 BFN36 BFN38 BFN37 BFN39 BCV29 BCV29 BA582 SCD-80 BCP29 BCP29 BAT18 BAT18-04
Siemens
Original
1N4148 BFR91A BFN21 BF993 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4001 1N4002 1N4003 1N4004 SCT-595

2N2907 SOT-23

Abstract: BC547 smd BCV29 BCP29 BA282 BA592 BA389 BA595 BA885 BAR50-03W BAR50-05 BAT18 BAT18-04
Infineon Technologies
Original
2N3563 2N2907 SOT-23 2n2222 smd SMD BC547 2n2222 sot-23 BC517 "cross reference" 1N4001 SOD-323 BAW78A BAS78A BAW78B BAS78B BAW78C BAS78C

diode cross reference

Abstract: diode hp 2800 CROSS DIRECT CROSS BAT18-04 SIEMENS HSMP-3822 MA4P275CK BAT18-05 SIEMENS HSMP , HSMP-3820 SIEMENS BAT18-04 HSMP-3822 SIEMENS BAT18-05 HSMP-3824 SIEMENS BAT18
Hewlett-Packard
Original
HSMP-3800 diode cross reference diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 HSMP-3810 HSMP-3802 HSMP-3804 HSMP-4810 HSMP-3812

XM0830SJ

Abstract: smd code marking 162 sot23-5 -02V BA895 BAR14-1 BAR15-1 BAR16-1 BAR61 BAT18-04 BAT18-05 Characteristics (TA = 25°C) typ. Values
Infineon Technologies
Original
XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BF517 BF770A BF771 BF775 BF799 BF799W

BGT24MTR11

Abstract: AZ1045-04F Reference Packages BA592 BA595 BA885 BA892 BA892-02V BA895 BAR14-1 BAR15-1 BAR16-1 BAR61 BAT18-04
Infineon Technologies
Original
BFR181W BGT24MTR11 AZ1045-04F BAR86-02LRH BGA628L7 24GHz Radar ALPHA&OMEGA DATE CODE BFP181 BFP182 BFP182R BFP182W BFP183 BFP183W

2sc3052ef

Abstract: 2n2222a SOT23 -1 BAR15-1 BAR16-1 BAR61 BAT18-04 BAT18-05 Package Chip1) Pin2) Code Conf. Family
Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BFG135A BFG193 BFG196 BFG19S BFG235 BFP181R
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