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| *SRC=1N5711W 1N5711W 1N5711W 1N5711W;DI_1N5711W 1N5711W 1N5711W 1N5711W;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. - .MODEL DI_1N5711W 1N5711W 1N5711W 1N5711W D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) * *Zetex BAT54 BAT54 BAT54 BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 BAT54 BAT54 BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-12 M=0.381 VJ=0.391 +BV=50 IBV=100e-6 ISR=431e-9 NR=4.99 * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied b www.datasheetarchive.com/files/diodes-inc/spice-model/spicemodels_all.txt |
Diodes, Inc. | 04/09/2012 | 1443.84 Kb | TXT | spicemodels_all.txt |
| *SRC=1N5711W 1N5711W 1N5711W 1N5711W;DI_1N5711W 1N5711W 1N5711W 1N5711W;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. - .MODEL DI_1N5711W 1N5711W 1N5711W 1N5711W D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) *SRC=BAS40 BAS40 BAS40 BAS40;DI_BAS40 BAS40 BAS40 BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 BAS40 BAS40 BAS40 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) * *Zetex BAT54 BAT54 BAT54 BAT54 Spice Model v1.0 Last Revised 25/04/00 * .MODEL BAT54 BAT54 BAT54 BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3 +XTI=2 EG=0.58 +CJO=12.4e-1 www.datasheetarchive.com/files/diodes-inc/spice-model/diodes_schottky-diodes.txt |
Diodes, Inc. | 17/10/2012 | 27.56 Kb | TXT | diodes_schottky-diodes.txt |
| * * This model account for one of the two diodes contained in the * BAS40-4 BAS40-4 BAS40-4 BAS40-4 device. The other one is totally identical. * .LIB BAS40 BAS40 BAS40 BAS40_04 * .SUBCKT BAS40 BAS40 BAS40 BAS40_04 A K * D1 A K BAS40 BAS40 BAS40 BAS40_1 D2 A K1 BAS40 BAS40 BAS40 BAS40_2 V1 K1 K DC 217e-3 * .MODEL BAS40 BAS40 BAS40 BAS40_1 D ( +LEVEL = 1 IS = 2.24014e-09 RS = 7.23547 +N = 1.02505 IKF = 0.255776 +CJO = 3.0881e-12 VJ = 119.67e-3 MJ = 183.18e-3 +FC = 0.5 www.datasheetarchive.com/files/diodes-inc/spice-model/2902.mod |
Diodes, Inc. | 04/09/2012 | 1.1 Kb | MOD | 2902.mod |
| ! SIEMENS Discrete & RF Semiconductors ! BAS40-04W BAS40-04W BAS40-04W BAS40-04W ! Si Schottky Diode in SOT323 ! VR = 5 V ! S-Parameters: November 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.99999 -1.9 0.100 0.99999 -3.7 0.150 0.99924 -5.8 0.200 0.99930 -7.6 0.250 0.99914 -9.5 0.300 0.99741 -11.3 0.400 0.99622 -15.1 0.500 0.99489 -18.9 0.600 0.99292 -22.6 0.700 0.99061 -26.4 0.800 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bas40_4w/td5v00u0.s1p |
Infineon | 14/11/1997 | 1.13 Kb | S1P | td5v00u0.s1p |
| ! SIEMENS Discrete & RF Semiconductors ! BAS40-04W BAS40-04W BAS40-04W BAS40-04W ! Si Schottky Diode in SOT323 ! IF = 0.02 mA ! S-Parameters: November 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.92694 -7.0 0.100 0.92670 -13.8 0.150 0.92166 -21.0 0.200 0.92003 -27.6 0.250 0.91485 -34.3 0.300 0.91092 -40.8 0.400 0.89933 -53.3 0.500 0.88858 -65.0 0.600 0.87744 -75.9 0.700 0.86756 -86.0 0.80 www.datasheetarchive.com/files/infineon/ehdata/spar/bas40_4w/tdv0020u.s1p |
Infineon | 14/11/1997 | 1.14 Kb | S1P | tdv0020u.s1p |
| ! SIEMENS Discrete & RF Semiconductors ! BAS40-04W BAS40-04W BAS40-04W BAS40-04W ! Si Schottky Diode in SOT323 ! VR = 0 V ! S-Parameters: November 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.99999 -5.3 0.100 0.99820 -10.5 0.150 0.99546 -15.8 0.200 0.99355 -21.0 0.250 0.98998 -26.1 0.300 0.98502 -31.1 0.400 0.97502 -41.0 0.500 0.96433 -50.6 0.600 0.95206 -59.9 0.700 0.93986 -68.6 0.800 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bas40_4w/tdv000u0.s1p |
Infineon | 14/11/1997 | 1.13 Kb | S1P | tdv000u0.s1p |
| ! SIEMENS Discrete & RF Semiconductors ! BAS40-04W BAS40-04W BAS40-04W BAS40-04W ! Si Schottky Diode in SOT323 ! VR = 4 V ! S-Parameters: November 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.99975 -2.1 0.100 0.99999 -4.0 0.150 0.99926 -6.2 0.200 0.99953 -8.2 0.250 0.99919 -10.3 0.300 0.99758 -12.3 0.400 0.99551 -16.3 0.500 0.99403 -20.4 0.600 0.99196 -24.5 0.700 0.98985 -28.5 0.800 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bas40_4w/td4v00u0.s1p |
Infineon | 14/11/1997 | 1.13 Kb | S1P | td4v00u0.s1p |
| ! SIEMENS Discrete & RF Semiconductors ! BAS40-04W BAS40-04W BAS40-04W BAS40-04W ! Si Schottky Diode in SOT323 ! IF = 80 mA ! S-Parameters: November 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.77218 179.3 0.100 0.77577 178.5 0.150 0.77571 178.1 0.200 0.77651 177.3 0.250 0.77785 176.6 0.300 0.78178 175.9 0.400 0.78442 174.4 0.500 0.78761 172.8 0.600 0.79061 171.2 0.700 0.79469 169.5 0.800 www.datasheetarchive.com/files/infineon/ehdata/spar/bas40_4w/tdv0080m.s1p |
Infineon | 14/11/1997 | 1.14 Kb | S1P | tdv0080m.s1p |
| ! SIEMENS Discrete & RF Semiconductors ! BAS40-04W BAS40-04W BAS40-04W BAS40-04W ! Si Schottky Diode in SOT323 ! IF = 0.08 mA ! S-Parameters: November 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.74497 -7.5 0.100 0.74378 -14.9 0.150 0.74327 -22.4 0.200 0.74537 -29.7 0.250 0.74497 -36.6 0.300 0.74634 -43.7 0.400 0.74694 -56.7 0.500 0.74872 -68.9 0.600 0.75009 -80.3 0.700 0.75335 -90.6 0.80 www.datasheetarchive.com/files/infineon/ehdata/spar/bas40_4w/tdv0080u.s1p |
Infineon | 14/11/1997 | 1.14 Kb | S1P | tdv0080u.s1p |
| ! SIEMENS Discrete & RF Semiconductors ! BAS40-04W BAS40-04W BAS40-04W BAS40-04W ! Si Schottky Diode in SOT323 ! IF = 30 mA ! S-Parameters: November 1997 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.050 0.73651 179.4 0.100 0.73936 178.4 0.150 0.73990 177.8 0.200 0.73905 176.8 0.250 0.74046 176.0 0.300 0.74247 175.2 0.400 0.74224 173.5 0.500 0.74309 171.8 0.600 0.74428 170.2 0.700 0.74601 168.4 0.800 www.datasheetarchive.com/files/infineon/ehdata/spar/bas40_4w/tdv0030m.s1p |
Infineon | 14/11/1997 | 1.14 Kb | S1P | tdv0030m.s1p |
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