500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
BAS1602LE6327XTMA1 Infineon Technologies AG Rectifier Diode, 1 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT, LEADLESS, TSLP-2-1, 2 PIN visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BAS 16-02L E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €0.0166 Price Each : €0.0278
Part : BAS 16-02L E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €0.0174 Price Each : €0.0276
Part : BAS 16-02L E6327XT Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0170 Price Each : $0.0193
Shipping cost not included. Currency conversions are estimated. 

BAS16-02L Datasheet

Part Manufacturer Description PDF Type
BAS16-02L Infineon Technologies Silicon Switching Diode Original
BAS16-02L Infineon Technologies Silicon Switching Diode Original
BAS16-02L Infineon Technologies High Speed Switching Diodes; Package: PG-TSLP-2; Configuration: Single; V<sub>R</sub> (max): 80.0 V; I<sub>F</sub> (max): 200.0 mA; I<sub>R</sub> (max): 100.0 nA; t<sub>rr</sub> (max): 4.0 ns; Original
BAS16-02LE6327 Infineon Technologies Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SWITCHING 80V 0.2A 2TSLP Original
BAS16-02LE6327 Infineon Technologies DIODE SWITCHING DIODE 80V 0.2A 2TSLP-2 T/R Original

BAS16-02L

Catalog Datasheet MFG & Type PDF Document Tags

BAS16

Abstract: A6s DIODE BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 , D 3 2 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S , BAS16-02L, -07L4 200 BAS16-02V, -02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 , , BAS16-02L/ -02V/ -02W/ -07L4 2.5 Total power dissipation 54 °C BAS16-02L, -07L4, TS BAS16 , 1For -65 . 150 #1; #1; #1; #1; #1; #1; BAS16-02L, -07L4 °C 125 calculation of RthJA
Infineon Technologies
Original
A6s DIODE BAS16W SCD80 BAS16/ BAS16-02L/

BAS16

Abstract: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 , D 3 2 2 Type BAS16 BAS16-02L* BAS16-02V* BAS16-02W BAS16-03W BAS16-07L4* BAS16S , BAS16-02L 200 BAS16-02V, BAS16-02W 200 BAS16-03W 250 BAS16S 200 BAS16U 200 , 4.5 t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 2.5 Total power dissipation 370 54 °C , -03W, TS 250 130 °C #2;#1; BAS16-02L, TS #2;#1; #2;#1; BAS16, TS mW Ptot 250 tbd
Infineon Technologies
Original

diode A6s

Abstract: BAS16 BAS16. Silicon Switching Diode For high-speed switching applications BAS16 BAS16W BAS16-02L , 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W , voltage VRM 85 Forward current IF Unit V mA BAS16 250 BAS16-02L, -07L4 200 , forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 2.5 Total power dissipation 54 °C 370 BAS16-02L, -07L4, TS BAS16-02V, -02W, TS
Infineon Technologies
Original
diode A6s BAS1602W marking a6 sot363 SC79 marking a6s

BAS16

Abstract: BAS16-02L BAS16-02L Silicon Switching Diode Preliminary data For high-speed switching application 2 1 Type BAS16-02L Maximum Ratings Parameter Diode reverse voltage Peak reverse voltageForward current Surge forward current Total power dissipation TS = tbd Junction temperature Storage temperature Thermal , Note Thermal Resistance 1 Aug-29-2001 BAS16-02L Electrical Characteristics at TA = 25 , Aug-29-2001 BAS16-02L Reverse current IR = (TA ) VR = Parameter BAS 16 EHB00022 Forward
Infineon Technologies
Original
EHN00017 EHB00025 EHB00023

BAS16

Abstract: diode A6s BAS16. Silicon Switching Diode For high-speed switching applications BAS16 BAS16W BAS16-02L , 2 Type BAS16 BAS16-02L* BAS16-02V* BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W , 85 Forward current IF Value Unit V mA BAS16 250 BAS16-02L 200 BAS16 , -07L4 200 Surge forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 2.5 Total power dissipation 370 54 °C BAS16-02L, TS BAS16
Infineon Technologies
Original
a6 bas16

BAS16-03W

Abstract: BAS16 BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16 , 85 Forward current IF Value Unit V mA BAS16 250 BAS16-02L, -07L4 200 , , BAS16-02L/ -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C 250 BAS16
Infineon Technologies
Original
BAS16 infineon

BAS16

Abstract: BAS16-03W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16 , 85 Forward current IF Value Unit V mA BAS16 250 BAS16-02L, -07L4 200 , , BAS16-02L/ -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C 250 BAS16
Infineon Technologies
Original

BAS16

Abstract: bas16 a6 BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! " # , BAS16 , BAS16S BAS16U BAS16W BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* SOT23 SOT363 SC74 , Forward current IF Unit V mA BAS16 250 BAS16-02L 200 BAS16-02V, BAS16-02W 200 , forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 2.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16-02L, TS 130 °C
Infineon Technologies
Original
bas16 a6 BAS16/S/U/W a6s marking A6s sot23 BAS16 SOT23 BAS16 transistor

BAS16

Abstract: BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16 , voltage VRM 85 Forward current IF Unit V mA BAS16 250 BAS16-02L, -07L4 200 , forward current IFSM t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 2.5 Total power dissipation mW Ptot BAS16, TS ≤ 54 °C 370 BAS16-02L, -07L4
-
Original

BAS16

Abstract: compliant) package 1) â'¢ Qualified according AEC Q101 BAS16 BAS16W BAS16-02L BAS16-02V BAS16 , , #31; #31; #31; #31; Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U BAS16W ! , Peak reverse voltage VRM 85 Forward current IF Unit V mA BAS16 250 BAS16-02L , 4.5 t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation Ptot mW BAS16, T S ≤ 54 °C 370 BAS16-02L, -07L4, TS ≤ 130 °C 250 BAS16
Infineon Technologies
Original

MARKING CODE A6s

Abstract: BAS16 compliant) package 1) · Qualified according AEC Q101 BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16 , voltage VRM 85 Forward current IF Value Unit V mA BAS16 250 BAS16-02L, -07L4 , , BAS16-02L/ -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, T S 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C 250
Infineon Technologies
Original
MARKING CODE A6s A6S marking code DIODE MARKING CODE LAYOUT G SOT23 bas16 infineon top marking code marking code a6 BAS1607

BAS16

Abstract: bas16 a6 compliant) package 1) · Qualified according AEC Q101 BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16 , reverse voltage VRM 85 Forward current IF Value Unit V mA BAS16 250 BAS16-02L , t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation Ptot mW BAS16, T S 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C
Infineon Technologies
Original
SOt323 marking code 6X marking code TS

BAS16

Abstract: transistor marking NA 85 BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! Type BAS16 BAS16-02L , current IF Value Unit V mA BAS16 250 BAS16-02L, -07L4 200 BAS16-02V, -02W 200 , current IFSM A t = 1 µs, BAS16/ S/ U/ W/ -03W 4.5 t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16-02L , BAS16, BAS16S 260 BAS16-02L, -07L4 80 BAS16-02V, -02W 120 BAS16-03W 135
Infineon Technologies
Original
transistor marking NA 85 DIODE MARKING CODE G SOT23 G t marking SOT323 marking 20 sot363 marking 38

BAS16

Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16 , 85 Forward current IF Value Unit V mA BAS16 250 BAS16-02L, -07L4 200 , , BAS16-02L/ -02V/ -02W/ -07L4 2.5 t=1s 0.5 Total power dissipation mW Ptot BAS16, TS 54 °C 370 BAS16-02L, -07L4, TS 130 °C 250 BAS16-02V, -02W, TS 120 °C 250 BAS16
Infineon Technologies
Original
E6327

BBY52

Abstract: BBY52-02L Stencil apertures Marking Layout (Example) BAS16-02L Type code Cathode marking Laser marking
Infineon Technologies
Original
BBY52 BBY52-02L BBY52-02W BAR63-02W SC75 marking code INFINEON

Spannungsregler

Abstract: UA808 QN2 14 ISET R4 8.2k GND 1 ISET VN 15 =1 C1 100nF VB BAS16_02L D1 R5 QP1 , CFI 12 CFI_I R9 VQ1 BAS16_02L D2 VQ2 R8 VNI VBR VN VQ2 BAS16_02L D3
iC-Haus
Original
Spannungsregler UA808 Kondensator 100nF nf schaltungen G003 G008 QFN24

OEN relays

Abstract: MA006 GND 1 ISET VN 15 =1 C1 100nF VB BAS16_02L D1 R5 QP1 4.7 QN1 VQ1 R6 C7 22nF 4.7 R7 QP2 4.7 QN2 C8 22nF 4.7 C9 4.7nF CFI_I R9 VQ1 BAS16_02L D2 VQ2 R8 VNI VBR VN CFI 12 VQ2 BAS16_02L D3 CFI CFI 1k BIAS GND 24
iC-Haus
Original
OEN relays MA006 DIODE 809 marking rvb 602 G022 G026 D-55294
Abstract: 0.925 0.3 1 Stencil apertures Marking Layout Type code BAS16-02L Laser marking Infineon Technologies
Original

marking code INFINEON

Abstract: 15.000 Pieces/Reel 4 0.5 1.16 Cathode marking 0.76 8 1 ±0.05 BAS16-02L Cathode
Infineon Technologies
Original

marking code INFINEON

Abstract: sod323 diode marking code AC Marking Layout Type code BAS16-02L Laser marking Cathode marking Example Standard
Infineon Technologies
Original
BBY51 BBY51-02L BBY51-02W BBY51-03W sod323 diode marking code AC marking code diode 14 DIODE Q marking MARKING 54 "Pin Diode" BAR63-03W
Abstract: 1 0.3 0.925 0.35 0.45 Stencil apertures Marking Layout (Example) BAS16-02L Type Infineon Technologies
Original
BBY58 BBY58-02L/V BBY58-02W BBY58-03W BBY58-05W BBY58-06W

02L MARKING CODE

Abstract: 1 Stencil apertures Marking Layout Type code BAS16-02L Laser marking Cathode
Infineon Technologies
Original
02L MARKING CODE BAR50 BAR50-02L BAR50-02V
Showing first 20 results.