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Part : BAR 66 E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €0.0639 Price Each : €0.1069
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BAR66 Datasheet

Part Manufacturer Description PDF Type
BAR66 Infineon Technologies PIN Diode array Surge protection device Original
BAR66 Infineon Technologies Silicon PIN Diode Array Original
BAR66 Infineon Technologies RF Antenna ESD Protection; Package: PG-SOT23-3; V<sub>ESD</sub>(min)(IEC61000-4-2 contact): 25.0 kV; V<sub>RWM</sub>: 150.0 V; Ct, Cl @ 0V: 0.7 pF; I<sub>R</sub> (typ): 20.0 nA; Ipp @ tp=8/20 us: 12.0 A Original
BAR66 Kexin Silicon PIN Diode Original
BAR66 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BAR66 Siemens Silicon PIN Diode Array (Surge protection device Two PIN diodes, series configuration) Original
BAR66 TY Semiconductor Silicon PIN Diode - SOT-23 Original
BAR66 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BAR66E6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE ARRAY OVP 150V 200MA SOT23 Original
BAR66E6327 Infineon Technologies DIODE PIN SWITCH 150V 3SOT-23 Original
BAR66E6433 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE PIN ARRAY 150V 200MA SOT23 Original

BAR66

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SIEMENS BAR66 Silicon PIN Diode Array â'¢ â'¢ â'¢ Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code (taped) Pin Configuration 1 2 A1 Q62702-A1473 , Vh BAR66 150 Unit Forward current Forward current (tp=1nS) If 200 mA If 20 , Semiconductor Group 1998-11-01 210 ' â  flE 3 5 b 0 5 01 502 43 3 lab â  BAR66 -
OCR Scan
012Q244

BAR66

Abstract: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 , Note Thermal Resistance 1 Aug-25-2004 BAR66. Electrical Characteristics at TA = 25 , (BR) IR VF 150 - 2 Aug-25-2004 BAR66. Diode capacitance CT = (VR) f = Parameter 0.8 , Aug-25-2004 BAR66. Permissible Puls Load RthJS = (tp) BAR66 10 K/W 3 Permissible Pulse
Infineon Technologies
Original
100MH

GP 005 DIODE

Abstract: marking PMs BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage , Resistance 4For 1 2007-04-19 BAR66. Electrical Characteristics at TA = 25°C, unless , 1 and pin 2 are connected 2I 2 2007-04-19 BAR66. Diode capacitance CT = (VR) f = , 60 80 100 120 °C 150 TS 3 2007-04-19 BAR66. Permissible Puls Load RthJS = , s 10 0 tP 4 2007-04-19 Package SOT23 BAR66. 0.4 +0.1 -0.05 1) 2
Infineon Technologies
Original
GP 005 DIODE marking PMs BCW66 IEC61000-4-2 IEC61000-4-5
Abstract: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 , Note Thermal Resistance 1 Aug-25-2004 BAR66. Electrical Characteristics at TA = 25 , (BR) IR VF 150 - 2 Aug-25-2004 BAR66. Diode capacitance CT = (VR) f = Parameter 0.8 , Aug-25-2004 BAR66. Permissible Puls Load RthJS = (tp) BAR66 10 K/W 3 Permissible Pulse Infineon Technologies
Original

BAR66

Abstract: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 , Parameter Feb-04-2003 BAR66. Electrical Characteristics at TA = 25°C, unless otherwise specified , mA, rr RL = 100 Charge carrier life time 2 Feb-04-2003 BAR66. Forward , °C 150 TS VF 3 Feb-04-2003 BAR66. (tp ) Permissible Pulse Load IFmax / IFDC
Infineon Technologies
Original

BAR66

Abstract: BAR66 Silicon PIN Diode Array 3 Surge protection device Two PIN diodes, series , 3 1 2 EHA07005 Type Marking BAR66 PMs Pin Configuration 1 = A1 2 = C2 , calculation of RthJA please refer to Application Note Thermal Resistance 1 Aug-24-2001 BAR66 , = 6 mA, IR = 3 mA Series inductance 2 Aug-24-2001 BAR66 Diode capacitance CT = f (VR , 10 -2 0.5 0.6 0.7 0.8 0.9 1 V 1.2 VF 3 Aug-24-2001 BAR66
Infineon Technologies
Original
VPS05161

BAR66

Abstract: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 , Note Thermal Resistance 1 Aug-25-2004 BAR66. Electrical Characteristics at TA = 25 , (BR) IR VF 150 - 2 Aug-25-2004 BAR66. Diode capacitance CT = (VR) f = Parameter 0.8 , Aug-25-2004 BAR66. Permissible Puls Load RthJS = (tp) BAR66 10 K/W 3 Permissible Pulse
Infineon Technologies
Original

2I k

Abstract: BAR66. Silicon PIN Diode Array · Surge protection device · Designed for surge overvoltage , 3For 1 2011-06-27 BAR66. Electrical Characteristics at TA = 25°C, unless otherwise , according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected 2 2011-06-27 BAR66. , 40 60 80 100 120 °C 150 VF TS 3 2011-06-27 BAR66. Permissible Puls , 4 2011-06-27 Package SOT23 BAR66. Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3
Infineon Technologies
Original
2I k

BAR66

Abstract: Q62702-A1473 BAR66 Silicon PIN Diode Array l l l Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code (taped) Pin Configuration 1 2 A1 C2 Q62702-A1473 Package 3 C1/A2 , temperature range Storage temperature range BAR66 Unit 150 V 200 mA 20 A 250 mW , , 05.05.94 BAR66 Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter
Siemens
Original

marking PM

Abstract: S IE M E N S Silicon PIN Diode Array · · · Surge protection device Tw o PIN diodes, series configuration D esigned for surge overvoltage clamping in antiparallel connection BAR66 Type BAR66 Marking PM s Ordering Code (taped) Q 62702-A1473 Pin Configuration 1 2 A1 C2 Package 3 C1/A2 SO T , dissipation T S < 25°C 1) Operating temperature range Storage temperature range Symbol Vr BAR66 150 200 20 250 , Vf 0.95 1.2 BAR66 Value typ. max. Unit V V pF 0.4 0.35 0.6 Or n . 12 1.5 _
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OCR Scan
marking PM

ESD5V0S1U-03W

Abstract: BAR66 ESD-Protection BAR66 n.a. 0.8 1 > 15 6 V @ I PP = 8 A (8/20 µs) 12 SOT23 1 2 , ESD8V0L2B-03L GND BAR66 VCC Surge protection PIN diode Ultra low capacitance High IP3 Surge , VCC D+ 480 Mbit/s USB 2.0 Device DGND 2 x BAR66 Naming System for TVS Diodes ESD
Infineon Technologies
Original
ESD5V0S1U-03W Transient Voltage Suppressor SOD323 d480 B132-H8660-X-0-7600

marking PMs

Abstract: BAR66 Diodes SMD Type Silicon PIN Diode Array BAR66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Two PIN diodes, series configuration 0.55 Surge protection device +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Designed for surge overvoltage clamping in antiparallel connection 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol
Kexin
Original
smd rf transistor marking
Abstract: Product specification BAR66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Two PIN diodes, series configuration 0.55 Surge protection device +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Designed for surge overvoltage clamping in antiparallel connection 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol V alue R everse TY Semiconductor
Original

BB409

Abstract: BA389 SIEMENS AKTIEN6ESELLSCHAF bOE D fl23SbDS D G 4 S 4 n 3G5 « S I E Ê Microwave, RF & Tuner Diodes T 07-01 - PIN (General Purpose, Switching) Diodes IType Maximum Ratings VR V BA582 BA585 BA586 BA592 BA595 BA885 BA886 BAR 14-1 (Dual) BAR15-1 (Dual) BAR 16-1 (Dual) BAR17 BAR60 (Triple) BAR61 (Triple) BAR63-03 BAR64 BAR66 (Dual) BAT18 BAT 18-04 (Dual) BAT18-05(Dual) BAT 18-06 (Dual) 35 50 50 35 50 50 50 100 100 100 100 100 100 150 200 150 35 35 35 35 For complete package outlines
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OCR Scan
BA389 BB409 d bb833 PACKAGE OUTLINES sod bb609 BA282 BB419 BB439 BB512 BB515

BAR64-03W

Abstract: BA585 -07 (Dual) BAR65-03W BAR66 (Dual) BAR80 BAT 18 BAT 18-04 (Dual) BAT 18-05 (Dual) BAT 18-06 (Dual) ^R
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OCR Scan
BAR64-03W BA596 BAR14-1 BAR63 BAR63-03W BAR63-04 BAR63-05

BAR66

Abstract: BA592 80 Ba597 IP3 [dBm] Ba595 Bar64 Bar66 60 Bar14 40 0.1 1 10 I / (r -R , Bias IF = 2 mA IF = 10 mA BA592 BAR63-03W BAR65-03W BA595 BA597 BA885 BAR14 BAR66 BAR64
Infineon Technologies
Original

XM0830SJ

Abstract: smd code marking 162 sot23-5 -05W BAR64-06 BAR64-06W BAR64-07 BAR65-02V BAR65-03W BAR66 BAR67-02V BAR67-04 BAR81W NEW BAR86 , ] IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 (contact) (5/50ns) (8/20µs) BAR66 D 150 25 12 ESD1P0RFS DD
Infineon Technologies
Original
XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BF517 BF770A BF771 BF775 BF799 BF799W

BAR54

Abstract: bar55 S1B BP2 bar37 S34 S31 S29 S32 S30 S33 S27 S28 bar61 bar62 bar65 bar66
Cyrustek
Original
BAR54 bar55 bar62 K2809 1000v 3a diode 113 16 LF 660A ES51964 RS232 SEG34 SEG33 SEG32 SEG31

BAR54

Abstract: r27-200 AUTO MANU ZERO REL PMAX PMIN BP4 bar61 bar62 bar65 bar66 10 S03 S04 20 30 S05
Cyrustek
Original
r27-200 LPc3 ZR 500k resistor 6600A ES51965 SEG30 SEG29 SEG35 ES636

2SK508

Abstract: TEA5767 S IE M E N S Silicon PIN Diode Array · · · Surge protection device Tw o PIN diodes, series configuration D esigned for surge overvoltage clamping in antiparallel connection BAR66 Type BAR66 Marking PM s Ordering Code (taped) Q 62702-A1473 Pin Configuration 1 2 A1 C2 Package 3 C1/A2 SO T , dissipation T S < 25°C 1) Operating temperature range Storage temperature range Symbol Vr BAR66 150 200 20 250 , Vf 0.95 1.2 BAR66 Value typ. max. Unit V V pF 0.4 0.35 0.6 Or n . 12 1.5 _
Philips Semiconductors
Original
2SK508 TEA5767 2SK147BL IRF power mosfets catalog 2SK163 Funkamateur BB202 BGA6589 BGU2003 BGM1011 BFQ591 BB140-01
Abstract: Product specification BAR66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Two PIN diodes, series configuration 0.55 Surge protection device +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Designed for surge overvoltage clamping in antiparallel connection 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol V alue R everse Infineon Technologies
Original

VAL-MS

Abstract: D-32823 Diodes SMD Type Silicon PIN Diode Array BAR66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Two PIN diodes, series configuration 0.55 Surge protection device +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Designed for surge overvoltage clamping in antiparallel connection 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol
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Original
D-32823 VAL-MS 20S45 CT-2 VAL-MS-750/30/3
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