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BA682 Datasheet

Part Manufacturer Description PDF Type
BA682 Kexin Band Switching Diodes Original
BA682 Philips Semiconductors Band-switching diodes Original
BA682 Philips Semiconductors Band-switching diodes Original
BA682 Philips Semiconductors Silicon Epitaxial Planar Diode Switches Original
BA682 TY Semiconductor Band Switching Diodes - LL-34 Original
BA682 Vishay Intertechnology Silicon Planar Diode Original
BA682 Honey Technology Silicon Epitaxial Planar Diode Switches Scan
BA 682 Infineon Technologies DIODE PIN SWITCH 35V 2SOD-80 Scan
BA682 N/A Catalog Scans - Shortform Datasheet Scan
BA682 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BA682 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BA682 Philips Semiconductors Band-switching diodes Scan
BA682 Philips Semiconductors BAND-SWITCHING DIODES FOR SURFACE MOUNTING Scan
BA682 Semtech Silicon Epitaxial Planar Diode Switches Scan
BA682 Siemens Silicon PIN Diodes Scan
BA6820 ROHM LED level meter driver, 12-point x 2 channel, VU scale, bar display Original
BA6820F ROHM LED level meter driver, 12-point x 2 channel, VU scale, bar display Original
BA6820F N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BA6820F N/A Shortform Data and Cross References (Misc Datasheets) Scan
BA6820F-E2 ROHM PMIC - Display Drivers, Integrated Circuits (ICs), IC LED DVR 2CH 12POINT 22-SOP Original
Showing first 20 results.

BA682

Catalog Datasheet MFG & Type PDF Document Tags

BA682

Abstract: BA683 BA682, BA683 SILICON EPITAXIAL PLANAR DIODE SWITCHES In MiniMELF case especially suited for , 1 V IR - - 50 nA BA682 rf - - 0.7 BA683 rf - - 1.2 BA682 rf - - 0.5 BA683 rf - - 0.9 Ctot - - 1.5 pF BA682 Ctot - - 1.25 pF BA683 Ctot - - 1.2 pF LS - , ) ® Dated : 20/06/2003 BA682, BA683 Dynamic forward resistance versus forward current Capacitance
Semtech Electronics
Original
100MH

BA682

Abstract: BA683 DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D121 BA682; BA683 Band-switching diodes , 13 Philips Semiconductors Product specification Band-switching diodes BA682; BA683 , BA682 1.25 pF BA683 1.20 pF BA682 0.7 BA683 1.2 BA682 0.5 , Fig.5 2 Philips Semiconductors Product specification Band-switching diodes BA682 , Band-switching diodes BA682; BA683 MBG309 1.5 MBG310 2 handbook, halfpage handbook, halfpage
Philips Semiconductors
Original
PHILIPS DIODE SOD80 MAM061 MBA388

BA682

Abstract: BA683 tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BA682 BA683 Type differentiation VR = 35 V, rf @ IF 3 mA = max 0.7 VR = 35 V, rf @ IF 3 mA = max 1.2 Ordering code BA682-GS18 or BA682-GS08 BA683-GS18 or BA683-GS08 Remarks Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = , VISHAY BA682/BA683 Vishay Semiconductors Band Switching Diodes Features · · · · Silicon , Rev. 1.4, 26-Apr-04 www.vishay.com 1 BA682/BA683 Vishay Semiconductors Electrical
Vishay Semiconductors
Original
DO-213 BLACK BAND BA682/BA683 88/540/EEC 91/690/EEC D-74025

BA682

Abstract: BA683 BA682, BA683 SILICON EPITAXIAL PLANAR DIODE SWITCHES In MiniMELF case especially suited for , Min. Typ. Max. Unit VF - - 1 V IR - - 50 nA BA682 rf - - 0.7 BA683 rf - - 1.2 BA682 rf - - 0.5 BA683 rf - - 0.9 Ctot - - 1.5 pF BA682 Ctot - - 1.25 pF BA683 , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2003 BA682, BA683 Dynamic
Semtech Electronics
Original

BA682

Abstract: BA683 BA682, BA683 SILICON EPITAXIAL PLANAR DIODE SWITCHES In MiniMELF case especially suited for , 1 V IR - - 50 nA BA682 rf - - 0.7 BA683 rf - - 1.2 BA682 rf - - 0.5 BA683 rf - - 0.9 Ctot - - 1.5 pF BA682 Ctot - - 1.25 pF BA683 Ctot - - 1.2 pF LS - , Code: 724) Dated : 20/06/2003 BA682, BA683 Dynamic forward resistance versus forward current
Semtech Electronics
Original
Abstract: /box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BA682 BA683 Type differentiation VR = 35 V, rf at IF 3 mA = max 0.7 VR = 35 V, rf at IF 3 mA = max 1.2 Ordering code BA682-GS18 or BA682-GS08 BA683-GS18 or BA683-GS08 Remarks Tape and Reel Tape and Reel Absolute Maximum , BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features · · · · · · Silicon , Document Number 85530 Rev. 1.5, 16-Mar-06 www.vishay.com 1 BA682 / BA683 Vishay Semiconductors Vishay Semiconductors
Original
2002/95/EC 2002/96/EC
Abstract: tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BA682 BA683 Type differentiation VR = 35 V, rf @ IF 3 mA = max 0.7 VR = 35 V, rf @ IF 3 mA = max 1.2 Ordering code BA682-GS18 or BA682-GS08 BA683-GS18 or BA683-GS08 Remarks Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = , VISHAY BA682/BA683 Vishay Semiconductors Band Switching Diodes Features · · · · Silicon , Rev. 1.4, 26-Apr-04 www.vishay.com 1 BA682/BA683 Vishay Semiconductors Electrical Vishay Semiconductors
Original
Abstract: switching in VHF-tuners PARTS TABLE PART BA682 BA683 TYPE DIFFERENTIATION VR = 35 V, rf at IF 3 mA = max. 0.7 VR = 35 V, rf at IF 3 mA = max. 1.2 ORDERING CODE BA682-GS18 or BA682-GS08 BA683-GS18 or , BA682, BA683 Vishay Semiconductors Band Switching Diodes FEATURES · Silicon planar diodes · , following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BA682 BA683 BA682 BA683 BA682 BA683 PART SYMBOL VF IR CD1 CD2 CD2 rf1 rf1 rf2 rf2 MIN. TYP. MAX. 1000 50 1.5 Vishay Semiconductors
Original
AEC-Q101 GS18/10K GS08/2

A683

Abstract: BA682 ba682.ba683 N Tamb = 2 5 "C \ a682.e 1 kHz a683 683 10 ) MHz 682 10 ) MHz  , BA682, BA683 Silicon Epitaxial Planar Diode Switches In MiniMELF case especially suited for , HQNEV TECHNOLOGY LTD. ) SO 9002-94 BA682, BA683 Characteristics at T . =25 °C Symbol Min. Typ , 20 V Dynamic Forward Resistance 0.7 Q at f = 50 to 1000 MHz, lF = 3 mA BA682 r, - - BA683 r, - - 1.2 Q at t = 50 to 1000 MHz, lF = 10 mA BA682 r, - - 0.5 a BA683 r, - - 0.9 Q
-
OCR Scan
A683

BA682

Abstract: BA682-GS08 Type differentiation Ordering code Remarks BA682 VR = 35 V, rf at IF 3 mA = max 0.7 BA682-GS18 or BA682-GS08 Tape and Reel BA683 VR = 35 V, rf at IF 3 mA = max 1.2 BA683-GS18 or , BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features · · · · · · , mm x 50 mm x 1.6 mm Tj 150 °C Tstg - 55 to +150 °C www.vishay.com 1 BA682 , Min Typ. 1.5 pF BA682 CD 1.25 pF BA683 CD 1.2 pF f = 200 MHz, IF =
Vishay Semiconductors
Original

BA 682

Abstract: BA682 Type differentiation Ordering code Remarks BA682 VR = 35 V, rf at IF 3 mA = max 0.7 BA682-GS18 or BA682-GS08 Tape and Reel BA683 VR = 35 V, rf at IF 3 mA = max 1.2 BA683-GS18 or , BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features · · · · · · , mm x 50 mm x 1.6 mm Tj 150 °C Tstg - 55 to +150 °C www.vishay.com 1 BA682 , Min Typ. 1.5 pF BA682 CD 1.25 pF BA683 CD 1.2 pF f = 200 MHz, IF =
Vishay Semiconductors
Original

BA682

Abstract: BA683 tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BA682 BA683 Type differentiation VR = 35 V, rf @ IF 3 mA = max 0.7 VR = 35 V, rf @ IF 3 mA = max 1.2 Ordering code BA682-GS18 or BA682-GS08 BA683-GS18 or BA683-GS08 Remarks Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = , VISHAY BA682/BA683 Vishay Semiconductors Band Switching Diodes Features · · · · Silicon , Rev. 1.4, 17-Feb-04 www.vishay.com 1 BA682/BA683 Vishay Semiconductors Electrical
Vishay Semiconductors
Original
semiconductor band color code
Abstract: bTE D â  bbSBRBl DD2bl?b â¡&& N AUER PHILIPS/DISCRETE APX BA682 BA683 y v BAND-SWITCHING DIODES FOR SURFACE MOUNTING Switching diodes in a SOD-80 envelope, intended for band switching in , soldering. The diodes are delivered in "super 8 " tape. QUICK REFERENCE DATA BA682 BA683 Continuous , -80. The cathode is indicated by a red band April 1992 117 BA682 BA683 bRE ] â  > J V , = 75 °C BA682 Diode capacitance at f = 1 MHz Vr = 1V Vr = 3 V Series resistance at f = 200 -
OCR Scan
S3T31
Abstract: BA682 BA683 _J V BAND-SWITCHING DIODES FOR SURFACE MOUNTING Switching diodes in a SOD-80 envelope, intended fo r band switching in v.h.f. television tuners. A special , in "super 8 " tape. QUICK REFERENCE D A T A BA682 Continuous reverse voltage BA683 VR max , a red band A pril 1992 101 BA682 BA683 RATINGS Lim iting values in accordance w ith the , In lR < < 50 1 BA682 BA 683 o Q_ VR = 1 V VR = 3V Series resistance at f = 200 -
OCR Scan

BA682

Abstract: PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE REMARKS BA682 VR = 35 V, rf at IF 3 mA = max. 0.7  BA682-GS18 or BA682-GS08 Tape and reel BA683 VR = 35 V, rf at IF 3 mA = , BA682, BA683 www.vishay.com Vishay Semiconductors Band Switching Diodes FEATURES â , current VR = 20 V IR 50 nA f = 100 MHz, VR = 1 V CD1 1.5 pF BA682 CD2 , . BA683 CD2 1.2 pF BA682 rf1 0.7  BA683 rf1 1.2  BA682 rf2
Vishay Semiconductors
Original
2011/65/EU JS709A

BA682

Abstract: BA683 BA682.BA683 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar , Applications 94 9371 Band switching in VHF­tuners Order Instruction Type BA682 BA683 Type Differentiation VR = 35 V, rf @ IF 3mA = max 0.7 VR = 35 V, rf @ IF 3mA = max 1.2 Ordering Code BA682­GS08 , Unit V nA pF pF pF W W W W www.vishay.com 1 (3) BA682.BA683 Vishay Telefunken , Rev. 3, 13-Feb-01 BA682.BA683 Vishay Telefunken Ozone Depleting Substances Policy Statement It
Vishay Telefunken
Original
200MH
Abstract: Tuner / Band Switching Diodes BA682 BA782 BA683 BA783 BA982 BA682 BA983 BA683 BA782 BA682 BA783 BA683 BA782S BA1282 BA783S BA1283 Max. Reverse Current Max. Diode Capacitance @ 100 MHZ, VR = 1V / 3V Max. Diff. Fwd Res. @ 200 MHZ, I F = 3mA / 10mA Package VR (V) VF (V) @ IF (mA) IR (nA) @ VR(V) CD( PF) rf(â"¦) 7"/13" Reel 100 35 1.0 @ 100 50 @ 20 1.5/1.25 0.7/0.5 1.5/1.20 1.2/0.9 35 1.0 @ Taitron Components
Original
BB721 BB721S BB729 BB729S BB731 BB731S

BA682

Abstract: BA683 DISCRETE SEMICONDUCTORS DATA SHEET , halfpage M3D121 BA682; BA683 Band-switching diodes , specification Band-switching diodes BA682; BA683 FEATURES DESCRIPTION · Continuous reverse , UNIT V 50 nA 1 uA 1.5 pF BA682 1.25 pF BA683 1.20 pF BA682 0.7 BA683 1.2 BA682 0.5 BA683 0.9 VR = 20 V; Tj = 75 °C Cd , Product specification Band-switching diodes BA682; BA683 THERMAL CHARACTERISTICS SYMBOL
Philips Semiconductors
Original

BA682

Abstract: BA683 BA682.BA683 TELEFUNKEN Semiconductors Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications 94 9371 Band , Conditions on PC board 50mmx50mmx1.6mm 1 BA682.BA683 TELEFUNKEN Semiconductors Characteristics , Semiconductors BA682.BA683 OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of TEMIC , IR CD CD CD rf rf rf rf BA682 BA683 BA682 BA683 BA682 BA683 f=200MHz, IF=3mA , f
Temic Semiconductors
Original
f 9370

DO 213

Abstract: BA682.BA683 Silicon Planar Diodes Tem ic S e m i c o n d u c t o r s Features · · · Low , =100MHz, Vr=3V Tÿpe Symbol vF Ir Cd Cd Cd rf rf rf rf BA682.BA683 Min Typ Max 1 50 1.5 1.25 1.2 0.7 1.2 , Voltage TELEFUNKEN Semiconductors Rev. A2, 24-Jun-96 33 BA682.BA683 Dimensions in mm Cathode , Diode capacitance Differential forward resistance f=200MHz, If- 3mA f=200MHz, lF=10mA BA682 BA683 BA682 BA683 BA682 BA683 Q Q Q Q Typical Characteristics (Tj = 25 °C unless otherwise
-
OCR Scan
DO 213

MAF100

Abstract: diode 682 package label. 46 QUO C-09 03E D â  fi235bOS 0015735 HSIEG SIEMENS AKTIENGESELLSCHAF T'ù7-/S* BA682 â , T~ô7-/5" BA682 â'¢ â'¢ â'¢ BA 683 Forward resistance n = f(If) f" 100 MHz n
-
OCR Scan
Q62702-A145 Q62702-A723 Q62702-A121 MAF100 diode 682 diode marking code 682 DIODE ba 683 BA diode 682 diode QQ1S733

ba682

Abstract: BA683 0 1 5 7 3 5 = ] mSIZG T *"0 7 - / ^ BA682 · BA 683 ! SIEMENS AKTIENSESELLSCHAF "" " \ i 5
-
OCR Scan
Abstract: Product specification BA682; BA683 LL-34 Unit: mm Features 1.50 1.30 2.64REF Continuous reverse voltage:max. 35 V 0.50 0.35 Continuous forward current:max. 100 mA Low diode capacitance:max. 1.5 pF Low diode forward resistance:max. 0.7 to 1.2 3.60 3.30 Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous reverse voltage IF Min Max Storage temperature 35 single diode loaded Tstg Junction temperature Unit -65 V 100 VR TY Semiconductor
Original

BA682

Abstract: BA683 Diodes SMD Type Band-switching diodes BA682; BA683 LL-34 Unit: mm Features 1.50 1.30 2.64REF Continuous reverse voltage:max. 35 V 0.50 0.35 Continuous forward current:max. 100 mA Low diode capacitance:max. 1.5 pF Low diode forward resistance:max. 0.7 to 1.2 3.60 3.30 Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous reverse voltage IF Min VR Continuous forward current Conditions Storage temperature Unit 35 -65 V 100 single
Kexin
Original
diode
Showing first 20 results.