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    B66341-G250-X127 Search Results

    B66341-G250-X127 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    SiT3373AI-1E9-33NG250.000000 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AI-2B2-28NG250.000000 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AI-2B9-28NG250.000000 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AI-2E2-33NG250.000000 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3373AI-4E3-33NG250.000000 SiTime 220 to 725 MHz Ultra-low Jitter Differential VCXO Datasheet

    B66341-G250-X127 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    B66341-G250-X127 EPCOS EC 52/24/14 Core Original PDF