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CDC930DLG4 Texas Instruments IC 133 MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO56, PLASTIC, SSOP-56, Clock Generator visit Texas Instruments
SN54180W-10 Texas Instruments TTL/H/L SERIES, 8-BIT PARITY GENERATOR/CHECKER, COMPLEMENTARY OUTPUT, CDFP14 visit Texas Instruments
SN74LS31D Texas Instruments Hex Delay Elements for Generating Delay Lines 16-SOIC 0 to 70 visit Texas Instruments
BQ25046DQCT Texas Instruments Generation 1 1.1A, Single-Input 5-V Power Supply IC for Contactless Charging Applications 10-WSON -40 to 85 visit Texas Instruments
BQ25046DQCR Texas Instruments Generation 1 1.1A, Single-Input 5-V Power Supply IC for Contactless Charging Applications 10-WSON -40 to 85 visit Texas Instruments
UC2901DTR/80209 Texas Instruments Isolated Feedback Generator 14-SOIC visit Texas Instruments

Avalanche Transistor Circuits for Generating

Catalog Datasheet MFG & Type PDF Document Tags

2N2369 AVALANCHE PULSE GENERATOR

Abstract: 2N2369 transistor pulse generator . H. Shaver, P. G. Griffith, "Avalanche Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December, 1962. 13. R. B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits , Avalanche Circuits with Applications to a Sensitive Transistor Oscilloscope," paper presented at the 1958 IRE-AIEE Solid State Circuits Conference, Philadelphia, PA., February 1958. 10. Motorola, Inc., "Avalanche , calibrated. Q5 requires selection for optimal avalanche behavior. Such behavior, while characteristic of
Linear Technology
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2N2369 Spice

Abstract: HP355C , "Avalanche Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December, 1962. 26. R. B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits," Technical Report No. 1653-1 , Edition, Wiley Interscience, 1977. 30. G. B. B. Chaplin, "A Method of Designing Transistor Avalanche Circuits with Applications to a Sensitive Transistor Oscilloscope," paper presented at the 1958 IRE-AIEE , AN79 FA01 TO HORIZONTAL CIRCUITS Figure A1. Simplified Vertical Channel Diagrams for Different
Linear Technology
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TP12N10

Abstract: je210 Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors. POWER TRANSISTORS 12 , . Safe operating area curves indicate lc - Vq e limits of the transistor that must be observed for , 3-862 Motorola Bipolar Power Transistor Device Data MJW16206 TEST CONDITIONS FOR ISOLATION TESTS
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TP12N10 je210 desaturation design 1200 volt npn Avalanche Transistor Circuits for Generating MPF930 AN1040

2N2369 avalanche

Abstract: 2N2369 transistor pulse generator , F Shaver, P Griffith, "Avalanche .H. .G. Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December 1962. 8. R.B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits," , . 14. G. B. B. Chaplin, "A Method of Designing Transistor Avalanche Circuits with Applications to a Sensitive Transistor Oscilloscope," paper presented at the 1958 IRE-AIEE Solid State Circuits Conference , . Motorola Transistor Handbook, 1963. 16. Williams, Jim, "A Seven-Nanosecond Comparator for Single Supply
Linear Technology
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2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 AN122 AN122-19 AN122-20

ex 3863

Abstract: MJf16206 circuits for high and very high resolution, monochrome and color CRT monitors. · 1200 Volt Vc e S Breakdown , For High Voltage Off Drive Circuits - 8.0 V (Min) MAXIMUM RATINGS Rating Collector-Emitter Breakdown , operating area curves Indicate Iq - Vc e HmKs of the transistor that must be observed for reliable operation , 3-862 Motorola Bipolar Power Transistor Device Data M JW 16206 TEST CONDITIONS FOR ISOLATION , Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art
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ex 3863

uis test

Abstract: ZXMN20B28K MOSFETs optimised for Voice over Internet Protocol (VoIP) Diodes Incorporated has extended its family of MOSFETs tailored for VoIP communication equipment. The ZXMN20B28K and ZXMN15A27K are avalanche rugged and designed for driving transformers in the DC-DC converter stage of Subscriber Line Interface Circuits (SLIC). These MOSFETs combined with a transformer allow a wide range of battery voltage (VBAT , compliant and contain no halogens or antimony compounds. Circuit Function For generating the VBAT
Diodes
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ZXMN10A25K ZXMN10A08G ZXMN10A11K ZXMN10A11G ZXMN7A11K ZXMN7A11G uis test TO252-3L TIP 298

transistor rc 3866

Abstract: t 3866 power transistor power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm , Breakdown Capability For High Voltage Off Drive Circuits - 8.0 Volts (Min) MAXIMUM RATINGS Rating , observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa tion than , hor izontal deflection circuits In computer monitor applications. Historically, deflection transistor , M H w H M llD N I M P I M M U m M JM M M I SCANSWITCHTM NPN Bipolar Power Deflection Transistor
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MJF16212 transistor rc 3866 t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor c 3866 transistor MJW16212

mpsg10

Abstract: MPSG1000 two ways to speed up a horizontal output stage. One is to design the transistor specifically for the , source, with a compliance voltage high enough to avalanche the output transistor's base-emitter junction , and Lp are not chosen in this way, either enough energy to adequately avalanche the output transistor , gain to operation at 6 amps gives a base current of 1.4 amps. For this transistor Eg{0ff) is specified , the output transistor's device physics and work back to the horizontal oscillator. The base drive
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mpsg10 MPSG1000 AN1076 1076 transistor MJH16206 AN1076/D AN1Q76/D

zener 9A2

Abstract: 9A2 zener diode data for safe designs. The short­term avalanche capability will be discussed with an insight of the , . The necessity for avalanche rugged power semiconductors has clearly been perceived by many , reliability. The energy is first stored in inductor L by turning on transistor Q for a period of time , DUT. For low breakdown voltage devices, a MOSFET might be preferred to the bipolar transistor. The , . Maximum Peak Current versus Avalanche Duration for a 15 A, 60 V MOSFET in an UIS Test Circuit. The
ON Semiconductor
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AR598 zener 9A2 9A2 zener diode power technics AN784 AN843 AR598/D

9A2 zener diode

Abstract: zener 9A2 the failure mechanisms leads to a new characterization method generating easy-to-use data for safe , of power semiconductors that are not intended to be used in avalanche. The necessity for avalanche , (UIS) test circuit (Fig 1). The energy is first stored in inductor L by turning on transistor Q for a , devices can sustain a low current for a long period of time (high energy) but at high avalanche currents , the transistor has to have a breakdown voltage higher than the DUT. For low breakdown voltage devices
ON Semiconductor
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IR6000

Abstract: IR-6000 DMOS transistor body diode) to assure very rapid inductive current decay and a guaranteed avalanche , Output Current vs. Load Inductance for Single Pulse Avalanche Operation (Vcc = 14V) IR6000 IR6000 , . During norm al 4055452 0021384 403 â  The charge pum p starts generating gate voltage for , speed circuits for inductive loads without the use o f freewheeling diodes. Figure 18 shows the , â¡MOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmft Product Summary General Description The
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IR-6000 D-6380

RECTIFIER DIODE 5A, 2500V VRRM

Abstract: DO220 : radiation generating R THYRISTOR: low power S TRANSISTOR: low power, switching T THYRISTOR , from 100 to 9999 for devices F TRANSISTOR: low power, high frequency G DIODE: oscillator , for SMPs (e.g. BYT42), damper and modulator diodes for the deflection circuits in CRTs (e.g. BY228 , . capital letters are used for the representation of external circuits of which the device is only a part , Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device
Vishay Intertechnology
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RECTIFIER DIODE 5A, 2500V VRRM DO220 transistor smps high voltage Diode BYT42 M byv26 smd MARK smd diode general semiconductor

MJ11016 equivalent

Abstract: DIODE MOTOROLA 633 designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color , Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 V (Min , indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; i.e., the , : GAPPED FOR LP = 30 µH VCE LB Q4 SCANSWITCH HORIZ OUTPUT TRANSISTOR LB = 0.5 µH CY = 0.01 , Motorola Bipolar Power Transistor Device Data 20 MJW16206 TEST CONDITIONS FOR ISOLATION TESTS
Motorola
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MJ11016 equivalent DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS 2N5337 2N6191 MJW16206/D

1811P3C8

Abstract: TO247AE designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color , Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 V (Min , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to , deflection circuits in computer monitor applications. Historically, deflection transistor design was focused , SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The
Motorola
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1811P3C8 TO247AE 120C4 MDC1000 MTP12N10 MR856

2N5337

Abstract: 2N6191 designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color , Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 V (Min) Î Î Î Î Î Î Î Î , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to , deflection circuits in computer monitor applications. Historically, deflection transistor design was focused , SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The
Motorola
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MTP8P10 MUR8100 MUR8100E

1811P3C8

Abstract: 2N5337 designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color , Emitter­Base Breakdown Capability For High Voltage Off Drive Circuits - 8.0 V (Min , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to , deflection circuits in computer monitor applications. Historically, deflection transistor design was focused , SCANSWITCHTM NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The
Motorola
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MDC1000A

Abstract: 1811P3C8 . They are specifically designed for use in horizontal deflection circuits for high and very high , observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than , ON Semiconductort MJW16206 SCANSWITCHt NPN Bipolar Power Deflection Transistors For High , Desaturation Specified (New Turn­Off Characteristic) · Maximum Repetitive Emitter­Base Avalanche Energy , 0.25 Volts (Typ) at 6.5 Amps Collector Current · High Emitter­Base Breakdown Capability For High
ON Semiconductor
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MDC1000A mtp3055

EQUIVALENT FOR mjf18004

Abstract: MOTOROLA MJW16212 Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state­of­the­art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page , Drive Circuits - 8.0 Volts (Min) *Motorola Preferred Device POWER TRANSISTOR 10 AMPERES 1500 , operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable
Motorola
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MJF18002 MJE18002 MJF18004 MJE18004 MJF18006 MJE18006 EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MJH16212 MC1391P MJ11016 transistor mjw16212 MJW16212/D

EQUIVALENT FOR mjf18004

Abstract: MJF18006 Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state­of­the­art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page , Drive Circuits - 8.0 Volts (Min) *Motorola Preferred Device POWER TRANSISTOR 10 AMPERES 1500 , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to
Motorola
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MJF18008 MJE18008 BS170 MOTOROLA

MJF16206

Abstract: MTP12N10 pin configuration Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJH16206 are state-of-the-art SWITCHMODE III bipolar power transistors. They are specifically designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors. â'¢ 1200 Volt Vqes , Emitter-Base Breakdown Capability For High Voltage Off Drive Circuits â'" 8.0 V (Min) MAXIMUM RATINGS , curves indicate Iqâ'"Vce limits of the transistor that must be observed for reliable operation; i.e., the
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K1194 transistor D 1557 TMJE210 078F w1620 ci mc7812 1-33-OI MJF16206/D
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