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Part Manufacturer Description Datasheet BUY
ADC081000CIYB Texas Instruments 1-CH 8-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQFP128, MS-026BFB, LQFP-128 visit Texas Instruments
ADC081000CIYB/NOPB Texas Instruments High Performance, Low Power 8-Bit, 1 GSPS A/D Converter 128-HLQFP -40 to 85 visit Texas Instruments

Alpha 1000 GaAsFET

Catalog Datasheet MFG & Type PDF Document Tags

Curtice

Abstract: fet curtice nonlinear model 50.0 71300_dc_tb Id 71300_statz_dc_sch IDC mA 100.0 Bias 1 -0.5 -0.4 -0.3 -0.2 -0.1 , P2 port = 2 IND Lc_d L = 1000000 GaAsFET FET2 AREA = 1 MODEL = FET1 MODE = nonlinear TOM FET1 VTO = vto VTOSC = vtosc ALPHA = alpha BETA = beta GAMMA = gamma GAMMADC = gammadc Q=q , 1000000 CAP Cc_d C = 1000000 RES RDB R = rdb_ps GaAsFET FET2 AREA = 1 MODEL = FET1 MODE = , port = 3 S2P SNP1 File = n71300Id TOM FET1 VTO = vto VTOSC = vtosc ALPHA = alpha BETA =
California Eastern Laboratories
Original

NE34018 equivalent

Abstract: AN1033 0 ALPHA 5 BETA 0.1838 GAMMA 0.038 GAMMADC 0.03 Q 1.8 DELTA 0.25 VBI 0.7 IS 3e-13 N , ) Parameters for the NE34018 100.0 1.0 90.0 2.0 0.5 VGS: 0V 80.0 M2 70.0 -0.1 V , I-V Curves 1.0 100.0 90.0 2.0 0.5 VGS: 0V 80.0 M2 IDSS 70.0 -0.1 V , -60.0 0.0 180° 0° -80.0 -100.0 -120.0 -150° -30° -30.0 0.0 Power 5.0 dBm/DIV , ) 100.0 90.0 80.0 70.0 60.0 50.0 40.0 30.0 20.0 10.0 0.0 -10.0 -20.0 -30.0 -40.0 -50.0
California Eastern Laboratories
Original
AN1033 AN1022 NE34018 equivalent Alpha 1000 GaAsFET FET model as 15-f AN1023

lna marking code vp

Abstract: 80 440 42 0.5 0.5 0.4 0.4 13.5 15 15 21 21 33.5 32 32.5 31 22 21 21 20 305 -0.35 - - 1000 600 0.8 , -0.57 -1.81 -3.30 -4.54 -5.51 -6.34 -7.33 -8.61 S21 Mag. 14.93 10.77 10.00 7.18 5.51 4.45 3.70 2.79 , Channel Temperature (oC) 100 125 140 150 160 (FITs) 1000 hours , Model Statz Model MESFETM1 NFET=yes PFET=no Vto=­0.95 Beta=0.48 Lambda=0.09 Alpha=4 B=0.8 Tnom
Agilent Technologies
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lna marking code vp ATF-33143 SC-70 ATF-34143 5968-7454E 5988-4211EN

3210 sot343

Abstract: ATF-33143 VDS = 4 V, IDS = 60 mA 20 Max. 305 -0.35 - - 1000 600 0.8 16.5 Notes: 1 , -7.33 -8.61 14.93 10.77 10.00 7.18 5.51 4.45 3.70 2.79 2.28 1.91 1.60 1.35 1.18 1.06 , different durations Channel Temperature (oC) (FITs) 1000 hours 1 year 5 year 10 year 30 year (FITs) 1000 hours 1 year 5 year 10 year 30 year 100 , =0.09 Alpha=4 B=0.8 Tnom=27 Idstc= Vbi=0.7 Tau= Betatce= Delta1=0.2 Delta2= Gscap=3 Cgs=1.6 pF
Agilent Technologies
Original
3210 sot343
Abstract: 0.5 0.4 0.4 13.5 15 15 21 21 33.5 32 32.5 31 22 21 21 20 305 -0.35 - - 1000 600 0.8 VGS = -0.5 V , -6.34 -7.33 -8.61 S21 Mag. 14.93 10.77 10.00 7.18 5.51 4.45 3.70 2.79 2.28 1.91 1.60 1.35 1.18 1.06 , Channel Temperature (oC) 100 125 140 150 160 (FITs) 1000 hours , Model Statz Model MESFETM1 NFET=yes PFET=no Vto=­0.95 Beta=0.48 Lambda=0.09 Alpha=4 B=0.8 Tnom Agilent Technologies
Original

cds 7163

Abstract: l0147 1000 Igss Gate Leakage Current Vgd = Vgs = -4V µA - 42 600 NF Noise Figure , -124.5 0.18 5 10 15 20 FREQUENCY (GHz) 5.8 10.00 0 6.16 9.00 -10 7 , 0.1 5.97 10.00 1.22 0.709 -124.7 0.18 5 Ga dB MSG/MAG and |S21|2 (dB , 0.712 -122.6 0.19 -10 0 5 10 15 20 FREQUENCY (GHz) 6.19 10.00 |S21|2 , -10 0 5 10 15 20 FREQUENCY (GHz) 6.15 10.00 |S21|2 6.41 9.00 0
Agilent Technologies
Original
ATF-331M4 cds 7163 l0147 ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 5988-4993EN

l0234

Abstract: vHF amplifier module 1000 Igss Gate Leakage Current Vgd = Vgs = -4V µA - 42 600 NF Noise Figure , -124.5 0.18 5 10 15 20 FREQUENCY (GHz) 5.8 10.00 0 6.16 9.00 -10 7 , 0.1 5.97 10.00 1.22 0.709 -124.7 0.18 5 Ga dB MSG/MAG and |S21|2 (dB , 0.712 -122.6 0.19 -10 0 5 10 15 20 FREQUENCY (GHz) 6.19 10.00 |S21|2 , -10 0 5 10 15 20 FREQUENCY (GHz) 6.15 10.00 |S21|2 6.41 9.00 0
Avago Technologies
Original
l0234 vHF amplifier module PHEMT marking code a FET marking code 365 n 431 transistor 5989-4216EN

COIL 2473

Abstract: HEMT marking P -0.35 - - 1000 600 0.8 - 16.5 - - - - - Notes: 1. Guaranteed at wafer probe level 2. Typical , 10.00 Fmin dB 0.37 0.41 0.41 0.46 0.48 0.5 0.54 0.59 0.67 0.76 0.85 0.93 1.02 1.11 1.19 opt Mag , 0.50 0.90 1.00 1.50 1.80 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 Fmin dB 0.37 0.41 0.42 , 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 MSG/MAG and |S21|2 (dB) Fmin dB 0.36 0.4 0.41 0.45 0.48 , 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 MSG/MAG and |S21|2 (dB) Fmin dB 0.4 0.43 0.44 0.48 0.51
Agilent Technologies
Original
COIL 2473 HEMT marking P 11823 die atf-*m4

MARKING CODE l22 lna

Abstract: Max. 305 -0.35 - - 1000 600 0.8 - 16.5 - - - P1dB 1dB Compressed Output Power [3] Vds , (dB) Freq GHz 0.50 0.90 1.00 1.50 1.80 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 Fmin , 0.90 1.00 1.50 1.80 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 Fmin dB 0.37 0.41 0.42 0.46 , 0.90 1.00 1.50 1.80 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 Fmin dB 0.36 0.4 0.41 0.45 , 0.90 1.00 1.50 1.80 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 Fmin dB 0.4 0.43 0.44 0.48
Avago Technologies
Original
MARKING CODE l22 lna AV02-3621EN

r 2501 kk 135

Abstract: r 2501 kk 106 0.4 13.5 15 15 21 21 33.5 32 32.5 31 22 21 21 20 305 -0.35 - - 1000 600 0.8 VGS = 0.42 V, VDS = 4 , 0.120 0.220 0.380 0.590 0.820 Ga dB 22.90 20.50 20.00 18.00 16.85 16.24 14.74 13.41 11.50 10.00 8.80 , =­0.95 Beta=0.48 Lambda=0.09 Alpha=4 B=0.8 Tnom=27 Idstc= Vbi=0.7 Tau= Betatce= Delta1=0.2 Delta2= Gscap , =0.001 L L1 L=0.6 nH R=0.001 GaAsFET FET1 Model=MESFETN1 Area= Temp= Mode=nonlinear TL:NP TL2 Z=Z2/2 Ohm
Hewlett-Packard
Original
r 2501 kk 135 r 2501 kk 106 r 2501 kk 250 mds 9651 r 2501 kk 111 hp 3586 ATF-35143

5989-0034EN

Abstract: ATF-54143 application notes 15.66 14.23 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 , =2 Vto=0.3 Cgs=1.73 pF Beta=0.9 Cgd=0.255 pF Lambda=82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd , =0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1 Mode=Nonlinear L L1 L=0.477 nH R=0.001 Port S1
Agilent Technologies
Original
ATF-54143 5989-0034EN ATF-54143 application notes marking 4FX C0159 ATF-54143-BLK 5988-8408EN

l0746

Abstract: Transistor TT 2246 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 -7.93 S21 Mag. 27.80 20.22 , Beta=beta Cgd=cgd Lambda=72e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=fgd Ohm Tnom=16.85 Rd=rd Ohm Idstc= Ucriti , =0.477 nH R=0.001 TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 L L6 L=0.175 nH GaAsFET
Agilent Technologies
Original
l0746 Transistor TT 2246 marking 4F sot-343 LNA MARKING 4F R11450 RD40 5988-0450EN

ATF-54143-TR1G

Abstract: l0746 15.66 0.60 162.6 14.23 0.62 137.4 11.91 0.65 115.9 10.00 0.68 97.6 8.36 0.70 80.6 7.01 , =82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.25 Ohm Tnom=16.85 Rd=1.0125 Ohm Idstc= Ucrit=-0.72 Rg , K=K A=0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1 Mode=Nonlinear L L1 L=0.477 nH
Avago Technologies
Original
A004R ATF-54143-TR1G 5.8 ghz amplifier 10w transistor c4 ATF54143 4L/SOT-343 AV01-0620EN AV02-0488EN

ATF-54143-BLKG

Abstract: ATF54143 14.23 0.62 137.4 11.91 0.65 115.9 10.00 0.68 97.6 8.36 0.70 80.6 7.01 0.72 62.6 5.76 0.76 45.4 4.60 0.83 , NFET=yes Rf= PFET=no Gscap=2 Vto=0.3 Cgs=1.73 pF Beta=0.9 Cgd=0.255 pF Lambda=82e-3 Gdcap=2 Alpha=13 Fc , =0.477 nH R=0.001 TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 GaAsFET F=1 GHz FET1 TanD
Avago Technologies
Original
ATF-54143-BLKG diagram transistor tt 2140 a 1458 L6 sot 665 ATF-54143BLKG 5989-3751EN

ATF-54143 application notes

Abstract: Curtice 14.23 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 -7.93 , =82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.25 Ohm Tnom=16.85 Rd=1.0125 Ohm Idstc= Rg=1.0 Ohm Ucrit , Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1
Agilent Technologies
Original
Curtice transistor C013 transistor 4F LNA SOT c5 87 ATF-54143-TR1 ATF-54143-TR2 5988-2722EN 5988-6275EN

RGS 13/1

Abstract: ATF-54143 application notes 22.33 19.49 17.75 17.36 15.66 14.23 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 , =2 Vto=0.3 Cgs=1.73 pF Beta=0.9 Cgd=0.255 pF Lambda=82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd , =0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1 Mode=Nonlinear L L1 L=0.477 nH R=0.001 Port S1
Agilent Technologies
Original
RGS 13/1 marking code 4f, package soT-343 zo 107 5989-1922EN

l0746

Abstract: Curtice 14.23 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 -7.93 , =82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.25 Ohm Tnom=16.85 Rd=1.0125 Ohm Idstc= Rg=1.0 Ohm Ucrit , Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1
Agilent Technologies
Original
RHO marking sot 23 marking code R4 transistor datasheet s parameters noise Transistor C 1279

l0746

Abstract: marking r4 SOT343 0.62-164.5 17.75 0.61-167.8 17.36 0.60 176.6 15.66 0.60 162.6 14.23 0.62 137.4 11.91 0.65 115.9 10.00 0.68 , Gscap=2 Vto=0.3 Cgs=1.73 pF Beta=0.9 Cgd=0.255 pF Lambda=82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd , =0.001 TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1
Avago Technologies
Original
marking r4 SOT343

marking 4FX

Abstract: AV02-0488EN 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 -7.93 S21 Mag. 27.80 , =0.9 Cgd=0.255 pF Lambda=82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.25 Ohm Tnom=16.85 Rd=1.0125 Ohm Idstc , Ohm L=25 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 GaAsFET F
Avago Technologies
Original

ATF-54143 application notes

Abstract: transistor 4F LNA 15.66 14.23 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 , =2 Vto=0.3 Cgs=1.73 pF Beta=0.9 Cgd=0.255 pF Lambda=82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd , =0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1 Mode=Nonlinear L L1 L=0.477 nH R=0.001 Port S1
Agilent Technologies
Original
sot-343 as marking R5 sc-70
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