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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

AX-52 diode

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AX-52 diode

Abstract: ,ZQ6 WI +) V N ;< EG&$ +) V NQ ; , 52)2(52(32 :'18 , IGBT Modules # # # Values Inverse diode SEMITRANSTM 3 # M3 V PR WI9 *(/2' , Q9OR ,Q9R6 Inverse diode ?,M%6 4M E[[$ h44 EG(.; V NRQ Jb ?Â¥X V Q ?b M^ V PR ,NPR6 WI M^ V , )24 E(-24
SEMIKRON
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Abstract: J JI9 M ;'(T Inverse diode EG EG[$ U3 V OQ ,ZP6 WI +) V M ;< EG&$ +) V MP ; , ^ V OQ ,MOQ6 WI ?Â¥X V MQ ?9 U^ V OQ ,MOQ6 WI ?IX, , CQP QP Inverse diode ?,U%6 4U E[[$ h44 EG(.; V MPP Jb ?Â¥X V P ?b U^ V OQ ,MOQ6 WI U^ V , EÂ¥LU )24 E(-24 , tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic SEMIKRON
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NKT677

Abstract: NKT612 â'" AC165 AC154 AC157 AA120 Complementary output Bias compensating diode Complementary , Limiting Resis­ tance VCE(sat)max SO Diode Temperature Coefficient VEB Emitter to Base , polarity. Do connect the replacement transistor or diode the right way round firs t time. Do ensure that , GERMANIUM JUNCTION DIODE Bias Stabiliser* Red or Brown Sleeve Line on sleeve adjacent to anode lead , Class B output stage bias stabilising circuits. This diode should always be used in the forward
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AD149 NKT677 NKT612 OC171 equivalent ac128 GEX34 AC113 AC155 AC156 AC128 AC166 AC167
Abstract: - LDÌ. Laser Diode Incorporated 2 Olsen Avenue, Edison, N ew Jersey 0 8820 USA Voice: 7 3 2 , : sales@laserdiode.com PINAMP Optical Receiver Modules 52 M b /s, 155 M b /s, 6 2 2 M b /s and 1 G b/s Data Rates , Gigabit Ethernet Laser Diode's PINAMP Product line provides a low cost, high performance miniature , ax 0 .5 20 10 10 + 5 .5 U n its V V mA mA V The Laser Diode Inc. range of PINAMP receivers has , Supply Voltage D iffe re n tia l | LPAD 0 0 5 2 52 M b /s Min Typ 52 -41 -43 0 1 7K 5 0 .8 5 0 .9 5 -
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TA-NWT-00983

UDN5722

Abstract: UDN5722M Suppression Diode Off-State Voltage, VofF . 70V Suppression Diode On-State Current, l0B (U DN-5720/50M , ut V o ltage Inp ut C u rren t Strobe Input C urren t Inp ut C la m p Volt. Diode Lea ka g e C urren t Diode Forward Voltage V n: V|N(0) IfN(O) l|N(l) IlNIO) IlNIl) VcLAMP 1. V, - - - - - - - + , UDN-5750M. 3. Diode leakage current measured at V, * 70 V. INPUT 2 .4 V V
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UDN5722 UDN5722M UDN-5722 udn5721 UDN5721M UDN-5720M UDN-5740M UDN-5724M 5740M
Abstract: Laser Diode Driver Features â'¢ Rise Times Less Than lOOps â'¢ Single Power Supply â'¢ High , is a single 5V supply, 2.4 Gb/s laser diode driver with direct access to the laser modulation and , Information SDH/SONET2.5 Gb/s Laser Diode Driver VSC7923 Table 1: Signal Pin Reference Type , Junction Temperature -5.2 Conditions V -4.9 V 85* c c 125 Power dissipation = , Product Information s d h / s o n e t 2.5 Gb/s VSC7923 Laser Diode Driver Table 5: Power -
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G52156-0 VSC79XX

A6520

Abstract: K l D F /V H F TUNING DIODES f S U H HYPERABRUPT DHA6520, A, B, C, 0 thru DHA6525, A, B, C, D elect; roñica, C1TM K The controlled C-V characteristics of this hyperabrupt tuning diode series , X O 's and in other tuning diode applications. The proven design of the DH A6520 thru the DH A6525 , 140 2.8 2.2 2.8 7.5 5.2 6.9 170 140 DHA 6524B 170 16 20 55 , 70.2 1.7 22.5 5.2 7.3 2.1 28 2.8 7.6 2.8 2.1 1.7 22.5 3.1 5.2
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MIL-S-19500 C4/C20 6520B 6520C 6S20D 6522B

da52

Abstract: ) Accidental Overload Area Source-drain Diode Forward Characteristics >D (A ) 52 39 T j - 1 5 0 °C , (continuous) at T c = 100 °C Drain Current (pulsed) Total D issipation at Tc = 25 °C D erating Factor 13 9 52 80 0.53 - 100 100 ± 15 9 6 52 35 0.23 2000 -65 to 175 175 V V V A A A W W /°C V Viso T s , 30 50 ns ns ns SOURCE DRAIN DIODE Symbol ISD I s d m (* ) P a r a m et er T e s t Co ndi ti on s Min. Typ. M ax. 13 52 Unit Source-drain C urrent Source-drain C urrent
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da52 STP13N10L STP13N10LFI
Abstract: tuning diode series facilitate their use in straight line frequency vs voltage applications through , VCXO's, TCXO's and in other tuning diode applications. T© A - The proven design of the D H A , 45 55 18 25 D H A 65 2 2 B 45 55 18 25 D H A 6 52 2C 4 7 .5 5 2 .5 18.4 21 .6 D H A 6522D 4 7 .5 52 .5 18.4 2 1.6 M IN D H A 6522 62 72 M , .3 2.7 9.2 2.2 7.3 9.2 2.8 2.2 2.8 7.5 5.2 6.9 55 D H A 65 2 3 B -
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L-S-19500 6524C 6525B 6525C A6525D 6524D

irf350

Abstract: 1RF35 F 3 52 IR F 3 53 V DS 400V 350V 400V 350V RDS(on) 0 .3 ft 0 .3 « 0.4Î2 0.4S2 >D 15A 15A 13A 13A , 60 IRF351 350 350 15 9.0 60 ±20 (See Fig. 14) (See Fig. 14} IRF352 400 400 13 8.0 52 T-39-13 IRF353 3S0 350 13 8.0 52 Units V V A A A V W W/K © 52 A °C °C (See Fig. 15 and 16) L = 10O^H 60 52 - 5 , , IRF353 Devices Source-Drain Diode Ratings and Characteristics lg Continuous Source Current (Body Diode) IRF350 IRF351 IRF352 IRF353 ISM Pulse Source Current (Body Diode) ® IRF350 IRF351 IRF352 IRF353 Vgp Diode
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1RF35 2clg G-133 SS452 G-134

125C42

Abstract: Operation · Single Power Supply Laser Diode Driver * Direct Access to Modulation and Bias FET's · Data Density Monitors Introduction The VSC7924 is a single 5V supply, 2.5Gb/slaser diode driver with direct , FAX: 805/987-5896 Page 1 SDH/SONET 2.5Gb/s Laser Diode Driver Table 1: Signal Pin Reference , Temperature Junction Temperature Min -5.5 -40 Typ 0 -5.2 Max -4.9 85* 125 Units V V , Dissipation Symbol Ivss Pd Pdmax Laser Diode Driver Parameter Power Supply Current (VSS) Total Power
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125C42
Abstract: Vdc ± 1 % V |H 0 0 0 V |L 2.0 2.0 - 2.0 v3 1.0 1.0 1.0 V ih a 2.0 4 2.0 + 2.0 VEE 5.2 5.2 5.2 ELECTRICAL CHARACTERISTICS , - - NOTES 1 Germanium diode (0.4 drop) forward biased from 11 to 14 (U W 2 Germanium diode (0 -
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MC1658

irl530

Abstract: ca se for 5 seconds Sym bol V V dss dgr IRL530 100 100 ± 15 13 9 52 75 0.6 - 5 5 to 150 300 IRL531 80 80 U nite Vdc Vdc Vdc V qs Id Id Id m P d 13 9 52 Ade Ade Ade Watts W/°C °C Tj , N-CHANNEL LOGIC LEVEL MOSFET SOURCE-DRAIN DIODE RATING AND CHARACTERISTIC Sym bol Is Characteristic C ontinuous S ource Current (Body Diode) P u ls e S ource Current (Body Diode) (3) Diode Forward Voltage (2) Reverse Recovery Tim e Min - Typ - - Max 13 52 2.5 360 Units A A V ns Teat
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IRL530/IRL531

QRB1134

Abstract: QRB1114 QRB1134 N otes (Applies to all components on pages 51 and 52.) 1. 0.050" distance from sensor face to , Temperature (Iron) Lead Temperature (Flow) Input Diode Continuous Forward Current Reverse Voltage Power , Temperature (Flow) Input Diode Continuous Forward Current Reverse Voltage Power Dissipation Output Transistor , s -40 to +85° C -40 to +85° C Derate linearly at 1.67 mW/° C above 25° C for Input Diode and Output Transistor Derate linearly at 1.33 mW/° C above 25° C for Input Diode and Output Transistor
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QRB1114 OPB703 OPB704 QRB1113 OPB705 QRC1113

3029D

Abstract: 2A115 1A1 5 52 Active bus-hold circuitry is provided to hold unused or floating data inputs at a , 1 2 3 GND 4 53 GND 5 6 7 8 9 10 11 52 51 50 49 48 47 46 1B1 12 , ) (Active) . 0.5V to VDD +0.5V DC Input Diode Current (IIK) VI < 0V . 50mA DC Output Diode Current (IOK) VO < 0V , otherwise noted) DC Characteristics (2.7V
Pericom Semiconductor
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PI74ALVTC16646A PI74ALVTC16646K 3029D 2A115 PI74ALVTC16646 PI74ALVTC PS8596
Abstract: current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode - - -40 -45 35 35 35 40 40 40 45 45 45 V V V 15 A , l2 for fusing t t = 10 ms Repetitive peak reverse current tp = 2 ps; 8 = 0.001 per diode. Non-repetitive peak reverse tp = 100 ps current per diode. Storage temperature Operating junction temperature , 2500 V 10 - PF MIN. TYP. M AX. UNIT - - ' " 6.1 5.2 KA/V KA -
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PBYR1545CTX
Abstract: FORWARD INTERNATIONAL ELECTRON 11 U D. ZENER DIODE F SERIES SEMICONDUCTOR TECHNICAL DATA Zener Diode F Series(lW) Ta=25°C M in(V ) M ax(V ) Iz(m A ) M ax.Z ener Im pedance Rz( Q ) FZD 2.7 2.6 2.9 40 FZD 3.0 2.8 3.2 FZD3.3 3.1 FZD 3.6 IR (uA ) V R (V , -0.010 FZD 5.6 5.2 6 30 6 10 1 0.035 FZD 6.2 5.8 6.6 30 6 10 , LTD. ZENER DIODE F SERIES SEMICONDUCTOR TECHNICAL DATA Ta=25°C M in(V ) M ax(V ) Iz -
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FZD13 FZID16 FZD43
Abstract: . -0.5V to 7V DC Input Diode Current, l|« For V| < -0.5V or V| > V c c + 0 .5 V . ±20m A DC O utput Diode Current, Iq k For V q < -0.5V or V q > V c c + 0 .5 V , 5.9 3.7 5.2 - 0.5 1.35 1.8 0.1 0.1 0.1 0.4 0.4 ±1 V V V V V V V V V V V V V V V V HA V |H or , Low Level O utput Voltage CM OS Loads v OL -4 -5.2 V |H or V|L 0.02 0.02 0.02 Low Level O utput Voltage T TL Loads Input Leakage Current Q uiescent Device Current l| V c c or GND VCc or GND 4 5.2 - -
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CD74HC86 CD74HCT86 74HCT CD74HC86E CD74HCT86E CD74HC86M
Abstract: -0.5V to 7V DC Input Diode Current, l|« For V| < -0.5V or V| > V c c + 0 .5 V . ±20m A DC O utput Diode Current, Iq k For V q < -0.5V or V q > V c c + 0 .5 V , High Level Output Voltage T TL Loads Low Level O utput Voltage CM OS Loads v OL V |H or V|L -4 -5.2 , | V c c or GND VCc or GND 4 5.2 2 4.5 6 4.5 6 2 4.5 6 4.5 6 6 1.5 3.15 4.2 1.9 4.4 5.9 3.98 5.48 0.5 , 0.33 ±1 1.5 3.15 4.2 1.9 4.4 5.9 3.7 5.2 0.5 1.35 1.8 0.1 0.1 0.1 0.4 0.4 ±1 V V V V V V V V V V V V V -
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CD54HCT32 CD74HC32 CD74HCT32 CD74HC32E CD74HCT32E CD74HC32M
Abstract: Bidirectional Transmission in 2nd and 3rd optical window Laser diode with Multi-Quantum Well structure Suitable , power · Low noise/high bandwidth PIN diode · Hermetically sealed subcomponents, similar to TO 18 · With , Soldering temperature ¿m ax = 30 s, 2 mm distance from bottom edge of case Laser Diode Forward current , 51414X Maximum Ratings (cont'd) Parameter Monitor Diode Forward current Reverse voltage PIN Photodiode , data refer to the optical port, 7c = 25 °C. Parameter Laser Diode Optical output power Emission -
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51414G 062702-P GM006907
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