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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

AV smd transistor

Catalog Datasheet MFG & Type PDF Document Tags

transistor 2N2222 SMD

Abstract: capacitor 2200 uF BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 - 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , common source class-AB test circuit. Mode of operation f VDS PL PL(AV) Gp D ACPR400 ACPR600 , Semiconductors UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and , BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6
NXP Semiconductors
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transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor

capacitor 2200 uF

Abstract: transistor 2N2222 SMD BLF4G10-160 UHF power LDMOS transistor Rev. 01 - 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , common source class-AB test circuit. Mode of operation f VDS PL PL(AV) Gp D ACPR400 ACPR600 , UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and CDMA base , June 2007 2 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 6
NXP Semiconductors
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ACPR750 ACPR1980 R10 smd ELECTROLYTIC capacitor 2200 uF 1812-X7R 2N2222 78L08 IS-95

30RF35

Abstract: VJ1206Y104KXB BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , ] [2] f (MHz) 2500 to 2700 VDS PL(AV) (V) 32 (W) 20 PL(p) Gp (W) 200 16 D ACPR885k , frequency range NXP Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 2 , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics
NXP Semiconductors
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30RF35 VJ1206Y104KXB smd transistor equivalent table ACPR885 2002/95/EC
Abstract: BLF6G22LS-100 Power LDMOS transistor Rev. 3 â'" 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 18.2 [1] VDS PL(AV) Gp ηD IMD3 ACPR (% , -100 NXP Semiconductors Power LDMOS transistor 1.3 Applications Ì RF power amplifiers for W-CDMA , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless NXP Semiconductors
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BLF6G22LS-100

Abstract: RF35 BLF6G22LS-100 Power LDMOS transistor Rev. 3 - 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 [1] VDS PL(AV) D IMD3 ACPR (dB) (%) (dBc , Hazardous Substances (RoHS) BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 1.3 , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol
NXP Semiconductors
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RF35

transistor D 1002

Abstract: BLF6G22LS-100 BLF6G22LS-100 Power LDMOS transistor Rev. 02 - 31 March 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , -carrier W-CDMA 2110 to 2170 28 25 [1] VDS PL(AV) D IMD3 ACPR (dB) (%) (dBc , Hazardous Substances (RoHS) BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor 1.3 , . 2010. All rights reserved. 2 of 12 BLF6G22LS-100 NXP Semiconductors Power LDMOS transistor
NXP Semiconductors
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transistor D 1002

BLF6G22LS-100

Abstract: RF35 BLF6G22LS-100 Power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multi carrier applications , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless
NXP Semiconductors
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TRANSISTOR SMD BV

C5750X7R1H106M

Abstract: 30RF35 BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , (RoHS) BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 , -100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5
NXP Semiconductors
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C5750X7R1H106M 6G38LS-100

transistor 9575

Abstract: BLF6G10-160RN BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 - 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV , ) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power , NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal
NXP Semiconductors
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transistor 9575 smd transistor f3 65 Capacitor 27 p-F 1 w2 smd transistor CAPACITOR 330 NF 10LS-160RN

BLF6G10LS-160RN

Abstract: TRANSISTOR SMD BV BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 - 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol
NXP Semiconductors
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nxp TRANSISTOR SMD 13

BLF6G38S-25

Abstract: transistor equivalent table BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj =
NXP Semiconductors
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transistor equivalent table
Abstract: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 â'" 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base , performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , substances (RoHS) BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications , BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5 NXP Semiconductors
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TRANSISTOR j412

Abstract: BLF6G38S-25 BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6
NXP Semiconductors
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TRANSISTOR j412 J412 - TRANSISTOR SMD

smd transistor 3400

Abstract: J412 - TRANSISTOR SMD BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise
NXP Semiconductors
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smd transistor 3400 cdma QPSK modulation Walsh pilot C4532X7R1H475M 722 smd transistor

transistor K 1352

Abstract: C5750X7R1H106M BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless
NXP Semiconductors
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transistor K 1352 TRANSISTOR K 135
Abstract: -23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor , Continental Device India Limited Data Sheet â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot Tj m ax. m ax. m ax. m ax. m ax. m ax. 50 50 5 150 150 150 hFE min. m ax. 70 400 â'"V CBO â'"V CEO â'"V EBO â'"IC â'"I B m ax. m ax. m ax. m ax. m ax. 50 50 5 150 30 V V V , voltage â'"V(BR)CEO min â'"IC = 1 mA; IB = 0 50 V Collector cut-off current â'"VCB = 50 V; IE = 0 Continental Device India
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CSA1162Y CSA1162GR C-120

C5750X7R1H106M

Abstract: smd transistor equivalent table BLF6G20LS-140 Power LDMOS transistor Rev. 01 - 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol
NXP Semiconductors
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Abstract: BLF6G10LS-160 Power LDMOS transistor Rev. 01 - 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , VDS (V) 32 PL(AV) (W) 32 Gp (dB) 22 D (%) 27 ACPR (dBc) -42[1] Test signal: 3GPP; test , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10LS-160 Power LDMOS transistor , 2008 2 of 10 NXP Semiconductors BLF6G10LS-160 Power LDMOS transistor 6. Characteristics NXP Semiconductors
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Abstract: BLF6G10S-45 Power LDMOS transistor Rev. 4 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies , VDS (V) 28 PL(AV) (W) 1.0 Gp (dB) 23 D (%) 8 ACPR (dBc) 48.5[1] Test signal: 3GPP; test , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10S-45 Power LDMOS transistor , Rev. 4 - 11 March 2013 2 of 11 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 6 NXP Semiconductors
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transistor BV-1 501

Abstract: smd 501 transistor BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. D 1-carrier N-CDMA[2] VDS PL(AV) PL , -50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor I Compliant to Directive 2002/95/EC , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter
NXP Semiconductors
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transistor BV-1 501 smd 501 transistor
Abstract: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 - 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station , ] f (MHz) VDS PL(AV) PL(M) [1] Gp (V) (W) 18.5 (W) 130 13 D ACPR885k ACPR1980k (dBc) (dBc) 65 , -100; BLF6G38LS-100 WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and , BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Symbol NXP Semiconductors
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Abstract: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 â'" 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base , performance at Tcase = 25 ï'°C in a class-AB production test circuit. 1-carrier N-CDMA[2] f VDS PL(AV , -100 NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications  RF power amplifiers for , of 13 BLF6G38-100; BLF6G38LS-100 NXP Semiconductors WiMAX power LDMOS transistor 5 NXP Semiconductors
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smd 501 transistor

Abstract: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 , and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 °C. Mode of operation W-CDMA [1] [2] [1][2] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV , transistor Integrated ESD protection Good pair match (main and peak on the same chip) Independent , BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 4. Block
NXP Semiconductors
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BLD22LS-50

BLF6G10S-45

Abstract: TRANSISTOR SMD CODE 6.8 BLF6G10S-45 Power LDMOS transistor Rev. 02 - 10 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. Mode of operation [1] VDS PL(AV) (MHz) 2 , -45 NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section
NXP Semiconductors
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TRANSISTOR SMD CODE 6.8

transistor 502

Abstract: Rogers 4350B BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev , proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 °C. W-CDMA [1][2] f VDS PL(AV) Gp D ACPR PL , transistor Integrated ESD protection Good pair match (main and peak on the same chip) Independent , W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 4. Block diagram RF-input/bias main
NXP Semiconductors
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transistor 502 Rogers 4350B Doherty amp doherty combiner 4350B BLD6G21L-50

1206 PHILIPS

Abstract: transistor 86 BLF8G22LS-160BV Power LDMOS transistor Rev. 1 - 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base , [1] f (MHz) 2110 to 2170 IDq (mA) 1300 VDS (V) 32 PL(AV) (W) 55 Gp (dB) 18.0 D (% , BLF8G22LS-160BV Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4,5 6 7 [1 , Semiconductors BLF8G22LS-160BV Power LDMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25
NXP Semiconductors
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1206 PHILIPS transistor 86
Abstract: Transistor MTTF Mean Time To Failure PAR Peak-to-Average Ratio SMD Surface Mounted Device , BLF8G22LS-160BV Power LDMOS transistor Rev. 1 â'" 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for , ] IDq VDS PL(AV) D ACPR (dB) (%) (dBc) 18.0 32 ï'­31[1] Gp Test , -160BV NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin -
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d2375

Abstract: BLF6G10S-45 BLF6G10S-45 Power LDMOS transistor Rev. 03 - 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies , source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR , Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section
NXP Semiconductors
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d2375

D2375

Abstract: BLF6G10S-45 BLF6G10S-45 UHF power LDMOS transistor Rev. 01 - 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. Mode of operation [1] VDS PL(AV) (MHz) 2 , transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise
NXP Semiconductors
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RF35

Abstract: BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 - 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base , (AV) Gp D IMD3 ACPR (MHz) Mode of operation (V) (W) (dB) (%) (dBc , (LS)-180RN NXP Semiconductors Power LDMOS transistor I Compliant to Directive 2002/95/EC , Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol
NXP Semiconductors
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BLF6G20 20LS-180RN
Abstract: BLF6G10S-45 Power LDMOS transistor Rev. 03 â'" 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD , substances (RoHS) BLF6G10S-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications Ì RF , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise NXP Semiconductors
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1961 30 TRANSISTOR

Abstract: RF35 BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 - 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base , (AV) Gp D IMD3 ACPR (MHz) Mode of operation (V) (W) (dB) (%) (dBc , (LS)-180RN NXP Semiconductors Power LDMOS transistor I Compliant to Directive 2002/95/EC , Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol
NXP Semiconductors
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1961 30 TRANSISTOR BLF6G22 22LS-180RN

smd code HF transistor

Abstract: BLF3G21-6 BLF3G21-6 UHF power LDMOS transistor Rev. 01 - 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies , ; Th = 25 °C in a modified PHS test fixture. PL(AV) Gp D ACPR600k (W) (dB) (% , Semiconductors UHF power LDMOS transistor I No internal matching for broadband operation I ESD protection , Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 6. Thermal characteristics
NXP Semiconductors
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smd code HF transistor
Abstract: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 â'" 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base , performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , transistor 1.3 Applications Ì RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol NXP Semiconductors
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10LS-200RN

BLF6G10-200RN

Abstract: BLF6G10LS-200RN BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 01 - 19 January 2009 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV , ) BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power , NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal
NXP Semiconductors
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vj1206y224kxb

transistor D13003 X

Abstract: ic 6 pin smd for power supply led power for the IC. Pin 3 is the base driver for the NPN transistor. Pin 1 is the switching pin. Pin 5 , × LP × â â â 2 RCS â  â 2 ⛠η ×F SW ×â âV ❠OUTCV ➠â , C2 Capacitor,Ceramic,100pF/500V,1206,SMD POE C3 Capacitor,Ceramic,47µF/25V,1206,SMD POE C4 Capacitor,Ceramic,10µF/10V,1206,SMD POE BD1 Bridge Rectifier,600V/0.5A, MBS06 , CONDITION Jintong FR1 Wire Round Resistor,1W,10ohm,KNP,5% TY-OHM Q1 Transistor,HFE 15-25
Active-Semi
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transistor D13003 X ic 6 pin smd for power supply led ACT364 ACT801 120VAC ACT365 PAR30 ACT512

2360D

Abstract: BLF6G10LS-135RN BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 - 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station , (AV) Gp (V) (W) 28 26.5 Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at , ) BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers , )-135RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol
NXP Semiconductors
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2360D 10LS-135RN

transistor SMD g 28

Abstract: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 â'" 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video , , tested on straight lead device. 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D , transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline , LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute
NXP Semiconductors
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transistor SMD g 28 LS-400PGV

2360d

Abstract: BLF6G10-135RN BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 - 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , (AV) Gp D ACPR (MHz) Mode of operation (V) (W) (dB) (%) (dBc) 869 to , transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and , February 2009 2 of 11 BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 5
NXP Semiconductors
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SMD TRANSISTOR LIST

BLF6G10LS-200RN

Abstract: A1118 BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 - 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV , ) BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers , NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal
NXP Semiconductors
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A1118

C4532X7R1E475M

Abstract: capacitor 220 uf BLF6G22LS-130 Power LDMOS transistor Rev. 01 - 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers W-CDMA base stations and , BLF6G22LS-130 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6
NXP Semiconductors
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C4532X7R1E475M capacitor 220 uf AVX12065C224K GRM217BR71H104KA11L RO4350B
Abstract: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 â'" 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , ] PL(AV) Gp (V) (W) 28 26.5 Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at , transistor 1.3 Applications Ì RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and , '" 21 January 2010 2 of 11 BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 5 NXP Semiconductors
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Abstract: ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology. Features â , . max. 4.5 6 ft Transfer admittance â'"ID = 200 mA; â'"V ds = 15 V IVfsl typ. 200 mS , capacitance at f = 1 MHz â'"V DS = 10 V; V GS = 0 typ. max. 30 pF 45 pF Crss typ. max. typ , 0 to 10 V V ^on ^ ff Note: 1. Transistor mounted on a ceramic substrate: area = 2,5 cm2 and -
OCR Scan
00E3T77 BST120
Abstract: BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev. 1 â'" 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for industrial , at Tcase = 25 ï'°C in a class-AB production test circuit. Test signal f VDS PL(AV) Gp , frequency range BLF10M6160; BLF10M6LS160 NXP Semiconductors Power LDMOS transistor 2. Pinning , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 ï'°C unless NXP Semiconductors
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Abstract: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 â'" 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base , -carrier W-CDMA 2496 to 2690 28 31.6 [1] VDS PL(AV) D ACPR (dB) (%) (dBc , LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 , BLC8G27LS-160AV NXP Semiconductors Power LDMOS transistor Table 5. Thermal characteristics NXP Semiconductors
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SIEMENS PACKAGE OUTLINE 14 PIN DIP

Abstract: siemens package outline dip to the output voltage and drives the base of the series transistor via a buffer. Saturation control , voltage tolerance AV q -4 4 % V-Version Vv.a = 2.5 V Output current I q limitation1 , AV q â'" 5 35 mV 7q = 5 mA to 400 mA 1 Line regulation AV q â'" 10 25 mV AV| = 12 V to 32V 7q = 5 mA 1 Power supply ripple rejection PSRR 60 , -5-3 (Plastic Transistor Single Outline) 9.9 9 .5 -3 .7 - w CD in CO T 04 08 1.7 4 x
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SIEMENS PACKAGE OUTLINE 14 PIN DIP siemens package outline dip a9358 Q67000-A9262 P-T0220-5-3 Q67000-A9263 Q67000-A9264 067006-A9266 Q67006-A9268
Abstract: BLF6G10-45 Power LDMOS transistor Rev. 02 â'" 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies , source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD , substances (RoHS) BLF6G10-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications Ì RF , LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless NXP Semiconductors
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Abstract: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 â'" 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved , circuit, tested on straight lead device. 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp , transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline , transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating NXP Semiconductors
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D-6021

Abstract: BLF6G10-45 Power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies , VDS (V) 28 PL(AV) (W) 1.0 Gp (dB) 22.5 D (%) 7.8 ACPR (dBc) 48.5[1] Test signal: 3GPP , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10-45 Power LDMOS transistor 1.3 , 11 March 2013 2 of 12 NXP Semiconductors BLF6G10-45 Power LDMOS transistor 6
NXP Semiconductors
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D-6021

smd 501 transistor

Abstract: smd transistor 501 BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev , proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 °C. TD-SCDMA [1][2] f VDS PL(AV) Gp D ACPR , -50; BLD6G21LS-50 NXP Semiconductors TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor I , -50; BLD6G21LS-50 NXP Semiconductors TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor 4
NXP Semiconductors
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smd transistor 501 BV 1 501 123J capacitor SOT1130A TD-SCDMA TRANSISTOR 2025
Abstract: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 â'" 25 June 2013 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video , , tested on straight lead device. 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D , MHz frequency range BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor 2 , rights reserved. 2 of 20 BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor 4 NXP Semiconductors
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transistor 9575

Abstract: RF35 BLF6G10-45 Power LDMOS transistor Rev. 02 - 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies , source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi , BLF6G10-45 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6
NXP Semiconductors
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SMD transistor package code A64

Abstract: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 â'" 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , -95 f VDS PL(AV) Gp ηD ACPR885k ACPR1980k (MHz) Mode of operation (V) (W , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , reserved. 2 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 5
NXP Semiconductors
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SMD transistor package code A64

SMD Transistor Y12

Abstract: transistor Common Base configuration . Diode: signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power , semiconductor component Control or switching device: low power (e.g. thyristor) Transistor: low power, switching Control or switching device: power (e.g. thyristor) Transistor: power switching Diode
Infineon Technologies
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SMD Transistor Y12 transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book

smd transistor F4

Abstract: RF35 BLF6G10-45 Power LDMOS transistor Rev. 01 - 3 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies , source class-AB production test circuit. Mode of operation [1] VDS PL(AV) (MHz) 2 , ) BLF6G10-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for , . Rev. 01 - 3 February 2009 2 of 11 BLF6G10-45 NXP Semiconductors Power LDMOS transistor
NXP Semiconductors
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smd transistor F4 Multilayer Ceramic Capacitor 10 uf TDK

10G SMD Transistor

Abstract: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 2 - 2 December 2010 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , ) 2500 to 2700 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 19 D (%) 20 ACPR885k (dBc) -49[2 , -10; BLF6G27-10G WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and , -10G WiMAX power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the
NXP Semiconductors
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10G SMD Transistor
Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT 6520 HIGHâ'"VOLTAGE TRANSISTOR Pâ'"Nâ'"P transistor Marking CMBT6520 = , mA â'"V(BR)CEO Collectorâ'"base break d ow n voltage â'"IC = 100 µA â'"V(BR)CBO Emitterâ'"base breakdown voltage â'"IE = 10 µA â'"V(BR)EBO Collector cutâ'"off current â'"VCB = 250 V â'"ICBO , 4 CMBT 6520 SOT-23 Formed SMD Package SOT-23 Formed SMD Package SOT-23 Package Reel Continental Device India
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TRANSISTOR J601

Abstract: gp816 BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 - 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , ACPR1980k (W) (dB) (%) (dBc) (dBc) 2 14 20 -49[2] -64[2] VDS PL(AV , Substances (RoHS) BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3 , LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute
NXP Semiconductors
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TRANSISTOR J601 gp816 J2396 J249

ph98

Abstract: smd code HF transistor BLF3G21-30 UHF power LDMOS transistor Rev. 01 - 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at , IDq = 1 A; Th = 25 °C in a modified PHS test fixture. PL(AV) Gp D ACPR600 (W) (dB , Semiconductors UHF power LDMOS transistor I No internal matching for broadband operation I ESD protection , BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 6
NXP Semiconductors
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ph98 597 smd transistor PH98072 2222-581 ACPR300 ACPR900

RF35

Abstract: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 - 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , ACPR1980k (W) (dB) (%) (dBc) (dBc) 2 19 20 -49[2] -64[2] VDS PL(AV , Substances (RoHS) BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3 , LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute
NXP Semiconductors
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Abstract: BLF8G19LS-170BV Power LDMOS transistor Rev. 2 - 28 March 2013 Product data sheet 1. Product profile 1.1 General description 170 W LDMOS power transistor with improved video bandwidth for base , (V) 32 28 PL(AV) (W) 60 33 Gp (dB) 18.0 19.8 D (%) 32 29 ACPR (dBc) 31 40 Test signal , range NXP Semiconductors BLF8G19LS-170BV Power LDMOS transistor 2. Pinning information Table , 28 March 2013 2 of 13 NXP Semiconductors BLF8G19LS-170BV Power LDMOS transistor 6 NXP Semiconductors
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10G SMD Transistor

Abstract: RF35 BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 - 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station , -95 f VDS PL(AV) Gp D ACPR885k ACPR1980k (MHz) Mode of operation (V) (W , MHz frequency range. BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor , -10G NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal
NXP Semiconductors
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transistor 123

TRANSFORMER ERL35

Abstract: 230v to 12v step down transformer film fixed resistor 3WS 01 +/-5% Mini size 1 R31 012 SMD resistor 0805 10 +/-5% 4 R17,R18,R39,R59 013 SMD resistor 0805 20 +/-5% 1 R60 014 SMD resistor 0805 47 +/-5% 2 R54,R55 015 SMD resistor 0805 100 +/-5% 1 R84 016 SMD resistor 0805 120 +/-5% REEL 1 R52 017 SMD resistor 0805 180 +/-5% REEL 1 R51 018 SMD resistor 0805 300 +/-5% REEL 1 R45 019 SMD resistor 0805 330 +/-5% 1
System General
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TRANSFORMER ERL35 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor PM30006-01 80PLUS SG6931 SG6516 SG6858

0315a

Abstract: KST-0315A AUK CORP. Photo Transistor KST-0315A Description The KST-0315A is a high-sensitivity & surface mount type silicon phototransistor. It's ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and various types of disk driver. Features Compact and thin package SMD type Reflow soldering RoHS & High reliability package Pin , system Touch screen for FA equipment AV instrument Various types of disk driver Absolute Maximum
Kodenshi AUK
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0315a SmD TRANSISTOR av

smd transistor p3

Abstract: STTA2006M CHARACTERISTICS If(av) 20A Vrrm 600V trr (typ) 30ns Vf (max) 1.5 V FEATURESAND BENEFITS â  SPECIFIC TO , OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. â  HIGH FREQUENCY OPERATIONS. â , , non isolated SMD with copper tab DESCRIPTION The TURBOSWITCH is a very high performance series of , power dissipation (see fig. 2) ÌF(AV) = 20A 5 = 0.5 Tc = 96'C 36 w Pmax Total power dissipation Pmax = , companion transistor, thus optimizing the overall performance in the end application. The way of
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STTA2006M smd transistor p3 PSO-10 SO-10
Abstract: AU K CORP. Photo Transistor KDT-6315A Description The KDT-6315A is a high-sensitivity & surface mount type silicon phototransistor. Itâ'™s ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and various types of disk driver. Pin Connection 1. Emitter 2. Collector Features Compact and thin package SMD type , Car navigation system Touch screen for FA equipment AV instrument Various types of disk driver Kodenshi AUK
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Abstract: AU K CORP. Photo Transistor KST-0315A Description The KST-0315A is a high-sensitivity & surface mount type silicon phototransistor. Itâ'™s ideal for various kinds of optical transistor such as touch panels for C/D, ATM, Car navigation system and even AV Instrument and various types of disk driver. Pin Connection 1. Emitter 2. Collector Features Compact and thin package SMD type , Car navigation system Touch screen for FA equipment AV instrument Various types of disk driver Kodenshi AUK
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SMD Transistor 1c

Abstract: -3-1 SMD = Surface Mounted Device Functional Description The TLE 4274 is a low-drop voltage regulator , to the output voltage and drives the base of the series transistor via a buffer. Saturation control , '" 250 500 mV / Q = 250 mA 20 50 mV 7q = 5 mA to 400 mA 25 mV AV| = 12 V , . are contained in our Data Book â'Package Informationâ' SMD = Surface Mounted Device Semiconductor Group Dimensions in mm 284 1998-11-01 SIEMENS TLE 4274 P-T0263-3-1 (Plastic Transistor
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SMD Transistor 1c Q67000-A9258 P-T0220-3-1 Q67000-A9257 Q67000-A9256 Q67006-A9331 P-T0252-3-1
Abstract: -23 Formed SMD Package CMBT5401 SILICON Pâ'"Nâ'"P HIGHâ'"VOLTAGE TRANSISTOR Pâ'"Nâ'"P transisto r , Limited Data Sheet â'"V CBO â'"V CEO â'"IC Ptot m ax. m ax. m ax. m ax 160 150 500 250 VCEsat m ax. 0,5 V hFE â'"V CBO â'"V CEO â'"V EBO â'"IC V V mA mW 60 to , ; Tamb = 150 °C â'"I CBO Breakdown voltages IC = 1 mA; IB = 0 â'"V(BR)CEO IC = 100 µA; IE = 0 â'"V(BR)CBO IC = 0; IE = 10 µA â'"V(BR)EBO Saturation voltages â'"V CEsat â'"IC = 10 mA; â'"IB = Continental Device India
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Abstract: -23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR Nâ'"Pâ'"N transisto r Marking CMBT4123 , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. m ax. 50 150 m ax. m ax. m ax. m ax. m ax , Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Ptot Total power dissipation , ) Collectorâ'"emitter breakdown voltage â'"IC = 1 mA; IB = 0 â'"V(BR)CEO min. Collectorâ'"base breakdown voltage Continental Device India
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Abstract: -23 Formed SMD Package CMBT4126 GENERAL PURPOSE TRANSISTOR Pâ'"Nâ'"P transisto r Marking CMBT4126 , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. m ax. 120 360 m ax. m ax. m ax. m ax , Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Continental Device India , specified) Collectorâ'"emitter breakdown voltage â'"IC = 1 mA; IB = 0 â'"V(BR)CEO min. Collectorâ'"base Continental Device India
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BLF6G20-110

Abstract: BLF6G20LS-110 BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 - 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station , PL(AV) Gp D IMD3 ACPR (MHz) Mode of operation (V) (W) (dB) (%) (dBc , -110; BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for , -110; BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5
NXP Semiconductors
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30RF35

Abstract: BLF6G38-50 BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 - 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. VDS (V) PL(AV) (W) PL(M)[1] (W) Gp (dB) D (% , WiMAX power LDMOS transistor 1.3 Applications RF power amplifiers for base stations and multicarrier , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol
NXP Semiconductors
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Abstract: -23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR Pâ'"Nâ'"P transisto r Marking CMBT5400 = , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. m ax. 40 180 m ax. m ax. m ax. m ax , Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Continental Device India , specified) Collectorâ'"emitter breakdown voltage â'"IC = 1 mA; IB = 0 â'"V(BR)CEO min. Collectorâ'"base Continental Device India
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smd transistor 5c sot-23

Abstract: -23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR Nâ'"Pâ'"N transisto r Marking CMBT4124 , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. m ax. 120 360 RATINGS (at T A = 25°C unless otherwise specified) Limiting values Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector , specified) Collectorâ'"emitter breakdown voltage â'"IC = 1 mA; IB = 0 â'"V(BR)CEO min. Collectorâ'"base
Continental Device India
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smd transistor 5c sot-23

transistor 5d smd

Abstract: -23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR Pâ'"Nâ'"P transisto r Marking CMBT4125 , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. m ax. 50 150 m ax. m ax. 30 30 , emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Continental Device India Limited , Junction temperature â'"V EBO â'"IC Ptot Tstg Tj m ax. 4 m ax. 200 m ax 350 â'"55 to +150 , specified) Collectorâ'"emitter breakdown voltage â'"IC = 1 mA; IB = 0 â'"V(BR)CEO min. Collectorâ'"base
Continental Device India
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transistor 5d smd
Abstract: -23 Formed SMD Package CMBT6517 HIGHâ'"VOLTAGE TRANSISTOR Nâ'"Pâ'"N transisto r Marking CMBT6517 = , power dissipation at T amb = 25°C D.C. current gain â'"IC = 10 mA; â'"VCE = 10 V â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot m ax. m ax. m ax. m ax. m ax 350 350 5 500 225 hFE min , (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Total power dissipation at T amb = 25 Continental Device India
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diode 6t6

Abstract: SMD TRANSISTOR 12a If(av) 12A Vrrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS â  SPECIFIC TO , OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. â  HIGH FREQUENCY OPERATIONS. . , , non isolated SMD with copper tab DESCRIPTION The TURBOSWITCH is a very high performance series of , dissipation (see fig. 2) lF(AV)= 12A 8 = 0.5 Tc = 108°C 22 w Pmax Total power dissipation Pmax = P1+ P3 (P3 , "FREEWHEEL Mode" application (Fig.1) considering both the diode and the companion transistor, thus
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STTA1206M diode 6t6 SMD TRANSISTOR 12a P5 smd transistor diode smd 600V soft recovery smd transistor xf SMD a7 Transistor

Diode SMD ED 7ca

Abstract: alps 502 RD CHARACTERISTICS If(av) 8A Vrrm 600V trr (typ) 25ns Vf (max) 1.5 V FEATURESAND BENEFITS â  SPECIFIC TO , OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. . HIGH FREQUENCY OPERATIONS. . HIGH , isolated SMD with copper tab DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast , power dissipation (see fig. 2) lF(AV) = 8A S = 0.5 Tc = 118*C 14.5 w Pmax Total power dissipation Pmax , companion transistor, thus optimizing the overall performance in the end application. The way of
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STTA806M Diode SMD ED 7ca alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT alps 502 C

230v to 12v step down transformer

Abstract: 230v to 12v ac step down transformer film fixed resistor 3WS 01 +/-5% Mini size 1 R31 012 SMD resistor 0805 10 +/-5% 4 R17,R18,R39,R59 013 SMD resistor 0805 20 +/-5% 1 R60 014 SMD resistor 0805 47 +/-5% 2 R54,R55 015 SMD resistor 0805 100 +/-5% 1 R84 016 SMD resistor 0805 120 +/-5% REEL 1 R52 017 SMD resistor 0805 180 +/-5% REEL 1 R51 018 SMD resistor 0805 300 +/-5% REEL 1 R45 019 SMD resistor 0805 330 +/-5% 1
System General
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230v to 12v ac step down transformer 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit smps 230V 1N4148 SMD LL-34 230V AC to 5V DC ic PM30006-02

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor . SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications. Q U ICK R E F , capacitance at f = 1 MHz V E b = 0; â'"V q b = 10 V Crb typ. 0,1 pF M ECHAN ICAL D ATA , ; â'"V Cg = 30 V Emitter cut-off current © II o typ. < 80 jliA 160 pA - l c = 1 mA; - V c , . 3 dB F typ. 3,5 dB â'"Ic = 4 mA; â'"V c e = 10 V â'"I q = 8 mA; â'" CE = 10 V V
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transistor SMD MARKING CODE HF S3T31 0DE470 BF824 MBB018 0D2471D 0DEM711
Abstract: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 â'" 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station , at Tcase = 25 °C in a class-AB production test circuit. VDS (V) PL(AV) (W) PL(M)[1] (W) Gp (dB) ηD , -50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications Ì RF power , reserved. 2 of 13 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 5 NXP Semiconductors
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BLF4G10-120

Abstract: BLF4G10S-120 BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 - 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station , -31 GSM EDGE 861 to 961 28 48 (AV) 19 40 -61 [1] 2-tone 120 (PEP) 19 46 - , 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB , BLF4G10-120; BLF4G10S-120 Philips Semiconductors UHF power LDMOS transistor 1.3 Applications s
Philips Semiconductors
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4G10
Abstract: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 - 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver , operation 2-tone, class-AB DVB-T (8k OFDM) [1] [2] f (MHz) 1452 to 1492 1452 to 1492 PL(AV) (W) 250 , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 NXP Semiconductors
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6G15LS-500H
Abstract: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 â'" 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , -carrier W-CDMA 2110 to 2170 28 2.5 [1] VDS PL(AV) D ACPR (dB) (%) (dBc , frequency range BLF6G22LS-40BN NXP Semiconductors Power LDMOS transistor 2. Pinning information , Power LDMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25 ï'°C per section NXP Semiconductors
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J122 SMD TRANSISTOR

Abstract: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 - 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 18.5 D (%) 16 ACPR (dBc) 50[1] Test signal: 3GPP test , BLF6G22LS-40BN Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4, 5 6, 7 Pinning , BLF6G22LS-40BN Power LDMOS transistor 7. Characteristics Table 7. Characteristics Tj = 25 C per section
NXP Semiconductors
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J122 SMD TRANSISTOR
Abstract: transistor 10. Abbreviations Table 10. Acronym CDMA EDGE GSM HF LDMOS PHS RF SMD UHF VSWR W-CDMA , BLF3G21-6 UHF power LDMOS transistor Rev. 2 - 11 April 2013 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies , PL(AV) (W) 2 Gp (dB) 16 D (%) 20 ACPR600k (dBc) 75 Gp (dB) 12.5 15.5 15.8 D (%) 43 39 IMD3 (dB) 32 , ) NXP Semiconductors BLF3G21-6 UHF power LDMOS transistor No internal matching for broadband NXP Semiconductors
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Abstract: -23 Formed SMD Package CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR Pâ'"Nâ'"P transisto r , °C Junction temperature D.C. current gain â'"IC = 100 mA; â'"VCE = 1 V â'"V CBO â'"V CEO â'"V EBO , °C unless otherwise specified) Limiting values Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector , â'"V(BR)CEO min. °C °C °C/mW 15 V Collector cutâ'"off current â'"VCB = 15 V â'"I Continental Device India
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CSA1362GR

J2735

Abstract: DVB-t2 BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 - 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver , transmitter applications. Table 1. Test information RF performance at VDS = 50 V; IDq = 1.3 A. f PL(AV , 1.5 GHz BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2
NXP Semiconductors
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J2735 DVB-t2 GP414 transistor smd 723 ATC800B JESD625-A

QDL0017

Abstract: 2BT-5 CHARACTERISTICS If(av) 5A Vrrm 600V trr (typ) 20ns Vf (max) 1.5V Power SO-10â"¢ Plastic, non isolated SMD , THE COMPANION TRANSISTOR. . HIGH FREQUENCY OPERATIONS. â  HIGH DISSIPATION MINIATURE PACKAGE. â , (AV) = 5A 5 = 0.5 Tc = 118°C g w Pmax Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tc= 115 , both the diode and the companion transistor, thus optimizing the overall performance in the end , : P3 Watts P5 Watts (Fig. 2) (Fig. 2) ON : P4 Watts (Fig. 3) (Fig. 3 & 4) SWITCHING TRANSISTOR
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OCR Scan
STTA506M QDL0017 2BT-5
Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT8598 CMBT8599 GENERAL PURPOSE TRANSISTOR Pâ'"Nâ'"P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN , power dissipation at Tamb = 25°C D.C. current gain â'"IC = 100 mA; â'"VCE = 5 V â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot CMBT 8598 max. 60 max. 60 max. max. max. hFE min. 75 max , Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Continental Device India
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Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4126 GENERAL PURPOSE TRANSISTOR Pâ'"Nâ'"P transistor Marking CMBT4126 = 5E PACKAGE OUTLINE DETAILS ALL , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. max. 120 360 max. max. max. max. 25 25 , voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Continental Device India Limited Continental Device India
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Abstract: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 - 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver , operation 2-tone, class-AB DVB-T (8k OFDM) [1] [2] f (MHz) 1452 to 1492 1452 to 1492 PL(AV) (W) 250 , transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 NXP Semiconductors
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BLD6G22L-150BN/2

Abstract: BLD6G22L BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 , proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 °C. W-CDMA [1][2] f VDS PL(AV) Gp D ACPR PL , -50; BLD6G22LS-50 NXP Semiconductors W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 100 , integrated Doherty transistor 4. Block diagram RF-input/bias main main amplifier 2 90° 90
NXP Semiconductors
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BLD6G22L-150BN/2 BLD6G22L 076MM capacitor 82j BLD6G22L-150BN/BLD6G22L
Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR Nâ'"Pâ'"N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. max. 50 150 max. max. max. max. max 40 , Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Ptot Total power dissipation Continental Device India
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Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR Pâ'"Nâ'"P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. max. 40 180 max. max. max. max. 130 , voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Continental Device India Limited Continental Device India
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SMD TRANSISTOR MARKING 5c

Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR Nâ'"Pâ'"N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. max. 120 360 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector
Continental Device India
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SMD TRANSISTOR MARKING 5c
Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT6517 HIGHâ'"VOLTAGE TRANSISTOR Nâ'"Pâ'"N transistor Marking CMBT6517 = 1Z PACKAGE OUTLINE DETAILS ALL , . current gain â'"IC = 10 mA; â'"VCE = 10 V â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot max. max. max , specified) Limiting values Collectorâ'"base voltage (open emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c Continental Device India
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Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR Pâ'"Nâ'"P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE , ABSOLUTE MAXIMUM RATINGS Collectorâ'"emitter voltage Collector current (DC) DC current gain â'"V CEO , â'"V CEO â'"V CBO â'"V EBO â'"IC Ptot Tstg Tj max. 40 V max. 40 V max. 5 V max. 600 mA , Collector cutâ'"off current â'"VCE = 35 V; â'"VEB = 0.4 V = 500 K/W â'"V(BR)CEO > 40 V â'"V Continental Device India
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Abstract: loop gain be needed at a future date. Detailed Electrical Specifications are contained in SMD , (http://www.semi.harris.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation Hard ened Products. August 1996 Features · Electrically Screened to SMD# 5962F9683101VPA · , the traditional PNP pulldown transistor. The composite device switches modes after crossing OV , decreases as the load capacitance increases. 10nF T t 0.1|iF NOTE: R-| = 00 (Av = +1) or O il -
OCR Scan
HS-1212RH 340MH MIL-PRF-38535 1N4002 1-800-4-HARRIS

transistor 5d smd

Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR Pâ'"Nâ'"P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL , â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot min. max. 50 150 max. max. 30 30 RATINGS , ) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Continental Device India Limited Data , â'"V EBO â'"IC Ptot Tstg Tj max. 4 max. 200 max 350 â'"55 to +150 max. 150 THERMAL
Continental Device India
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Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR Nâ'"Pâ'"N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL , . current gain â'"IC = 3 mA; â'"VCE = 1 V â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot max. max. max , emitter) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Continental Device India Limited Data Sheet V Continental Device India
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lm358 smd

Abstract: LM2904 available in a chip sized package (8-Bump micro SMD) using National's micro SMD package technology. n Two , in 8-Bump micro SMD chip sized package, (See AN-1112) n Internally frequency compensated for unity , Metal Can 550 mW Small Outline Package (M) 530 mW micro SMD 435mW Input Voltage 26V , °C/W for micro SMD, which applies for the device soldered in a printed circuit board, operating in a , , there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause
National Semiconductor
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LM158 LM358 LM2904 lm358 smd LM1458 CROSS REFERENCE LM358 pinout LM258 VCO application Circuit using LM358 LM158/LM258/LM358/LM2904 LM1558/LM1458
Abstract: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 , proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 °C. W-CDMA [1][2] f VDS PL(AV) Gp ηD ACPR , integrated Doherty transistor Ì Ì Ì Ì Ì Ì Ì 100 % peak power tested for guaranteed output , Semiconductors W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 4. Block diagram RF-input NXP Semiconductors
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J122 SMD TRANSISTOR

Abstract: BLC6G22L-40BN/2 BLF6G22L-40BN Power LDMOS transistor Rev. 1 - 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies , ) (dBc) 2.5 19 16 -50[1] [1] VDS PL(AV) (MHz) 2-carrier W-CDMA f (V , Hazardous Substances (RoHS) BLF6G22L-40BN NXP Semiconductors Power LDMOS transistor 1.3 , rights reserved. 2 of 13 BLF6G22L-40BN NXP Semiconductors Power LDMOS transistor 6
NXP Semiconductors
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BLC6G22L-40BN/2 800B
Abstract: BLF6G22L-40BN Power LDMOS transistor Rev. 1 â'" 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at , ) (%) (dBc) 2.5 19 16 â'50[1] [1] VDS PL(AV) (MHz) 2-carrier W-CDMA f , Semiconductors Power LDMOS transistor 1.3 Applications Ì RF power amplifiers for W-CDMA base stations and , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C per NXP Semiconductors
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BLF6G22LS-75

Abstract: RF35 BLF6G22LS-75 Power LDMOS transistor Rev. 02 - 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies , 30.5 -37.5[1] -41.5[1] Mode of operation f VDS PL(AV) Gp (MHz) (V) (W , Restriction of Hazardous Substances (RoHS) BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor , Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise
NXP Semiconductors
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SMD TRANSISTOR 12a

Abstract: smd transistor marking p3 transistor due to the diode P4(W) 0.8 Tj=125 oC F=20kHz P5(W) F=100kHz 25.0 I F=IF( AV , 12A VRRM 600V trr (typ) 28ns VF (max) 1.5V K A IF(AV) K FEATURES AND , LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. SMD PACKAGE. A NC 2 D PAK (Plastic) DESCRIPTION The TURBOSWITCH is a very high , °C/W IF(AV) = 12A =0.5 STTA1206D Tc= 108°C 22 W Total power dissipation Pmax = P1 + P3
STMicroelectronics
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STTA1206G smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1
Abstract: Screened to SMD#5962F9683401VCA MIL-PRF-38535 Class V Com pliant User Programmable For Closed-Loop Gains , ) Detailed Electrical Specifications are contained in SMD #5962F9683401VCA, available on the Harris Web site , address is (http://www.semi.harris.com/datasheets/smd/smd_xref.ht ml). SMD numbers must be used to order , . In this approach, a composite device replaces the traditional PNP pulldown transistor. The com  , °C, Rl = 100£^ Unless Otherwise Specified (Continued) -40 -40 AV 1+2 AV +2 -45 -45 -
OCR Scan
HS-1412RH

BLC6G22-75

Abstract: BLC6G22LS-75 BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor Rev. 01 - 7 February 2008 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station , PL(AV) Gp D IMD3 ACPR (MHz) Mode of operation (V) (W) (dB) (%) (dBc , -75 NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA , LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol
NXP Semiconductors
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sot895a sot896b
Abstract: BLF6G22LS-75 Power LDMOS transistor Rev. 02 â'" 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies , common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp (MHz , Substances (RoHS) BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 1.3 Applications Ì RF , rights reserved. 2 of 11 BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor 6 NXP Semiconductors
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Abstract: BLF6G10LS-200 Power LDMOS transistor Rev. 02 - 24 November 2008 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at , VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20.6 D (%) 28 ACPR (dBc) -41[1] Test signal: 3GPP , Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G10LS-200 Power LDMOS transistor , 2008 2 of 11 NXP Semiconductors BLF6G10LS-200 Power LDMOS transistor 6. Characteristics NXP Semiconductors
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5962F9683401VCA

Abstract: HA5025EVAL Closed Loop Buffer August 1996 Features Description · Electrically Screened to SMD , Specifications are contained in SMD #5962F9683401VCA, available on the Harris Web site or AnswerFAX Systems , ://www.semi.harris.com/datasheets/smd/smd_xref.ht ml). SMD numbers must be used to order Radiation Hardened Products , device replaces the traditional PNP pulldown transistor. The composite device switches modes after , resistors, and leave the connections open. 2. a. For AV = +1 evaluation, remove the gain setting resistors
Harris Semiconductor
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HA5025EVAL HFA1145IP

RF35

Abstract: BLC6G10LS-160 BLF6G10LS-200 Power LDMOS transistor Rev. 01 - 18 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at , in a class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , ) BLF6G10LS-200 NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol
NXP Semiconductors
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BLC6G10LS-160

LM358

Abstract: lm358n operational amplifier as summing amplifier in a chip sized package (8-Bump micro SMD) using National's micro SMD package technology. n Two , in 8-Bump micro SMD chip sized package, (See AN-1112) n Internally frequency compensated for unity , 830 mW Metal Can 550 mW Small Outline Package (M) 530 mW 530 mW micro SMD 435mW Output , for Small Outline package, and 230°C/W for micro SMD, which applies for the device soldered in a , transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go
National Semiconductor
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lm358n operational amplifier as summing amplifier IC OP AMP LM358N lm358 sum LM358 IN COMPARATOR CIRCUIT LM358n pin DIAGRAM DS007787-25

VCO application Circuit using LM358

Abstract: LM358 pinout in a chip sized package (8-Bump micro SMD) using National's micro SMD package technology. n Two , in 8-Bump micro SMD chip sized package, (See AN-1112) n Internally frequency compensated for unity , 830 mW Metal Can 550 mW Small Outline Package (M) 530 mW 530 mW micro SMD 435mW Output , for Small Outline package, and 230°C/W for micro SMD, which applies for the device soldered in a , transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go
National Semiconductor
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1.2 lm358 LM358 internal circuit K2622 LM358 CONNECTION THE INPUT OF THE IC lm358 crossover lm358 current monitor

vco lm358n

Abstract: IC OP AMP LM358N in a chip sized package (8-Bump micro SMD) using National's micro SMD package technology. n Two , Features n Available in 8-Bump micro SMD chip sized package, (See AN-1112) n Internally frequency , micro SMD Marking Orientation 8-Bump micro SMD DS007787-56 Bumps are numbered counter-clockwise , ) M08A N08E J08A LM258H LM358H H08C 8-Bump micro SMD LM358BP LM358BPX Note 1: LM158 is available per SMD #5962-8771001 LM158A is available per SMD #5962-8771002 Note 2: See STD Mil
National Semiconductor
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vco lm358n lm2904 58 lm358 vco lm358 led driver

LM2904

Abstract: LM358 in a chip sized package (8-Bump micro SMD) using National's micro SMD package technology. n Two , in 8-Bump micro SMD chip sized package, (See AN-1112) n Internally frequency compensated for unity , 830 mW Metal Can 550 mW Small Outline Package (M) 530 mW 530 mW micro SMD 435mW Output , °C/W for micro SMD, which applies for the device soldered in a printed circuit board, operating in a , , there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause
National Semiconductor
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ic lm358n TYPICAL APPLICATION OF LM2904 LM158AH LM358 comparator DS007787 LM358 active filter

BLF6G10LS-135R

Abstract: f4 smd transistor BLF6G10LS-135R Power LDMOS transistor Rev. 01 - 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at , in a class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , ) BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless
NXP Semiconductors
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f4 smd transistor mobile rf power amplifier transistor
Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR Pâ'"Nâ'"P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS , ; â'"VCE = 20 V Continental Device India Limited Data Sheet â'"V CBO â'"V CEO â'"V EBO â'"IC , otherwise specified) Tamb = 25 °C unless otherwise specified Collectorâ'"emitter breakdown voltage â'"V(BR)CE0 â'"IC = 1 mA; lB = 0 Collectorâ'"base breakdown voltage â'"V(BR)CB0 â'"IC = 10mA; IE = 0 Continental Device India
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5962F9683001VPA

Abstract: 1N4002 Electrically Screened to SMD 5962F9683001VPA The HS-1145RH is a high speed, low power current feedback , /Disable Time. . . . . . . 180ns/35ns (Typ) Detailed electrical specifications are contained in SMD , Harris Part Numbers to SMDs. The address is (http://www.semi.harris.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation Hardened Products. Applications · Multiplexed Flash A , replaces the traditional PNP pulldown transistor. The composite device switches modes after crossing 0V
Harris Semiconductor
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HFA11XXEVAL 360MH

BLF6G22LS-75

Abstract: RF35 BLF6G22LS-75 Power LDMOS transistor Rev. 01 - 8 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at , common source class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless
NXP Semiconductors
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TRANSISTOR 751

CLC502

Abstract: CLC502AJE -pin plastic SOIC CLC502 Clamping, Low-Gain Op Amp with Fast 14-bit Settling April 1998 DESC SMD , Printed in the U.S.A. http://www.national.com CLC502 Electrical Characteristics (Av = +2, Vcc = ±5V , Performance Characteristics (TA = 25°, Av = +2, VCC = ±5V, RL = 100, Inverting Frequency Response Non-Inverting Frequency Response -90 -180 Av = 8 Rf = 110 -270 Av = 4 Rf = 200 Av = -1 Rf = 249 Magnitude (1dB/div) Magnitude (1dB/div) 0 Av = -2 Rf = 237 Vout = 0.5Vpp -180
National Semiconductor
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CLC502AJP CLC502AJE

vj1206y224kxb

Abstract: RF35 BLF6G10LS-200R Power LDMOS transistor Rev. 01 - 21 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at , in a class-AB production test circuit. 2-carrier W-CDMA [1] f VDS PL(AV) Gp D , ) BLF6G10LS-200R NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers , transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol
NXP Semiconductors
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LM358H

Abstract: LM358AM (8-Bump micro SMD) using National's micro SMD package technology. Advantages n Two internally , as LM1558/LM1458 dual op amp Features n Available in 8-Bump micro SMD chip sized package, (See AN , current is also temperature compensated. Connection Diagrams 8-Bump micro SMD micro SMD Marking , -Pin Metal Can 8-Bump micro SMD Note 1: LM158 is available per SMD #5962-8771001 LM158A is available per SMD #5962-8771002 Note 2: See STD Mil DWG 5962L87710 for Radiation Tolerant Devices LM358BP
National Semiconductor
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LM358AM TRANSISTOR BC 530 lm158j

CLC414

Abstract: CLC414A8B , MIL-STD-883, Level B DESC SMD number: 5962-91693 Pinout DIP & SOIC © 1998 National Semiconductor Corporation Printed in the U.S.A. http://www.national.com CLC414 Electrical Characteristics (Av = +6 , Transistor count http://www.national.com 2 152 CLC414 Typical Performance Characteristics Inverting Frequency Response Non-Inverting Frequency Response -90 Av = 10 Rf = 200 -180 -270 Av = 6 Rf = 499 Magnitude (1dB/div) Magnitude (1dB/div) 0 Av = -1 Rf = 1k Vout = 2Vpp
National Semiconductor
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CLC414AJP CLC414AJE CLC414ALC CLC414A8B

CLC502AJP

Abstract: CLC502 -pin plastic SOIC CLC502 Clamping, Low-Gain Op Amp with Fast 14-bit Settling June 1999 DESC SMD , Printed in the U.S.A. http://www.national.com CLC502 Electrical Characteristics (Av = +2,Vcc = ±5V , Typical Performance Characteristics (TA = 25°, Av = +2, VCC = ±5V, RL = 100, Inverting Frequency Response Non-Inverting Frequency Response -90 -180 Av = 8 Rf = 110 -270 Av = 4 Rf = 200 Av = -1 Rf = 249 Magnitude (1dB/div) Magnitude (1dB/div) 0 Av = -2 Rf = 237 Vout = 0.5Vpp -180
National Semiconductor
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CLC414

Abstract: CLC414A8B , MIL-STD-883, Level B DESC SMD number: 5962-91693 Pinout DIP & SOIC © 1999 National Semiconductor Corporation Printed in the U.S.A. http://www.national.com CLC414 Electrical Characteristics (Av = +6 , Transistor count http://www.national.com 2 152 CLC414 Typical Performance Characteristics Inverting Frequency Response Non-Inverting Frequency Response -90 Av = 10 Rf = 200 -180 -270 Av = 6 Rf = 499 Magnitude (1dB/div) Magnitude (1dB/div) 0 Av = -1 Rf = 1k Vout = 2Vpp
National Semiconductor
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HA5023EVAL

Abstract: 5962F96830101VPA Closed Loop Buffer August 1996 Features Description · Electrically Screened to SMD , ) Detailed Electrical Specifications are contained in SMD #5962F9683101VPA, available on the Harris Web site , (http://www.semi.harris.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation , approach, a composite device replaces the traditional PNP pulldown transistor. The composite device , 0.1µF +5V 8 - + 0.1µF 7 6 5 GND GND NOTE: R1 = (AV = +1) or 0 (AV = +2
Harris Semiconductor
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HA5023EVAL 5962F96830101VPA HFA1212IP
Abstract: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 â'" 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial , -carrier W-CDMA 869 to 894 28 26.5 [1] VDS PL(AV) D ACPR (dB) (%) (dBc , range BLF10M6135; BLF10M6LS135 NXP Semiconductors Power LDMOS transistor 2. Pinning , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 ï'°C unless NXP Semiconductors
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Abstract: BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 1 â'" 1 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies , -carrier W-CDMA 869 to 894 28 40 [1] VDS PL(AV) D ACPR (dB) (%) (dBc) 20 , range. BLF10M6200; BLF10M6LS200 NXP Semiconductors Power LDMOS transistor 2. Pinning , Semiconductors Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 ï'°C NXP Semiconductors
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Abstract: -23 Formed SMD Package CMBT918 VHF/ UHF TRANSISTOR Nâ'"Pâ'"N transisto r Marking CMBT918 = 3B , mA; â'"VCE = 1 V â'"V CBO â'"V CEO â'"V EBO â'"IC Ptot m ax. m ax. m ax. m ax. m ax , ) â'"V CBO Collectorâ'"emitter voltage (open base) â'"V CEO Emitterâ'"base voltage (open collector) â'"V EBO Collector current (d.c.) â'"IC Continental Device India Limited Data Sheet V V V , breakdown voltage â'"IC = 3 mA; â'"IB = 0 â'"V(BR)CEO min. Collectorâ'"base breakdown voltage â'"IC = 1 Continental Device India
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SIPMOS

Abstract: smd transistor equivalent table the RDS(On) values. Table 1 Comparison of Data Sheet Figures for MOS Transistor SMD Packages At , SIPMOS transistors of SMD design react to pulse-shaped loads. As the SOA (safe operating area) diagram , is not exceeded. So for normal operation, a transistor no longer has to be overdesigned in terms of , transistor into breakdown. Quite apart from this, voltage transients can be coupled into the circuit from , possible, there is the worst-case risk of the parasitic bipolar transistor inherent in the MOSFET being
Siemens
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SIPMOS smd transistors list Small Signal MOSFETs BSP 220 equivalent smd transistors Transistor comparable types

ACPR10

Abstract: ACPR885 BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 - 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station , = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp , Semiconductors WiMAX power LDMOS transistor I Compliant to Directive 2002/95/EC, regarding Restriction of , -75 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal
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ACPR10 nxp power microwave transistor 6G27LS-75
Abstract: -23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR Pâ'"Nâ'"P transisto r Marking , RATINGS Collectorâ'"emitter voltage Collector current (DC) DC current gain â'"V CEO â'"IC m ax , dissipation up to Tamb = 25 °C Storage temperature range Junction temperature â'"V CEO â'"V CBO â'"V , current â'"VCE = 35 V; â'"VEB = 0.4 V = 500 K/W â'"V(BR)CEO > 40 V â'"V(BR)CBO > 40 V â'"V(BR)EBO > 5 V â'"I BEX < 0.1 mA â'"I C EX < 0.1 mA hFE hFE hFE hFE hFE Continental Device India
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smd transistor k19

Abstract: fast recovery diode 1200v SMD Characteristics Units Vbr 1200 v lf(av) 7 a trr 135 ns Qrr 10 nC irrm 675 a vf 3.9 v Description , Transistor â'" Higher Frequency Operation â'" Reduced Snubbing â'" Reduced Parts Count The HEXFRED , In both the diode and the switching transistor. These HEXFRED advantages can help to significantly , Reverse Voltage (V) 600 Absolute Maximum Ratings Parameter Min iyp Max Units Conditions if(av> Max , Wj Weight - 2.4 - 9 Case IR Case Style SMD-1 - - - K-20
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HFA40HF120 smd transistor k19 fast recovery diode 1200v SMD SMD DIODE 200A 200a1 diode pkr
Abstract: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 3 â'" 26 June 2013 Product data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video , [1] IDq VDS PL(AV) D ACPR5M (dB) (%) (dBc) 18 30 ï'­30[1] Gp , 2700 MHz frequency range BLF8G27LS-150(G)V NXP Semiconductors Power LDMOS transistor 2 , reserved. 2 of 17 BLF8G27LS-150(G)V NXP Semiconductors Power LDMOS transistor 5. Thermal NXP Semiconductors
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8G27LS-150GV

P-T0252-5-1

Abstract: 4276GV50 to the output voltage and drives the base of the series transistor via a buffer. Saturation control , voltage AV q tolerance Output current / q limitation1» Current consumption; W .-/Q Current consumption; /q , dB / Q = 250 mA 7q = 400 mA I Q= 250 mA Vdr-V.-Vq 7q = 5 mA to 400 mA AV| = 12 V to 32V / Q= 5 mA /;= , Package Outlines P-T0220-5-3 (Plastic Transistor Single Outline) TLE 4276 9.9 9.5 ·3.7- CO , Semiconductor Group 13 1998-11-01 SIEMENS TLE 4276 P-T0220-5-43 (Plastic Transistor Single
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P-T0252-5-1 P-TQ22 4276GV50 P-T0252 TLE4276DV TLE4276V TLE4276SV P-T0220-5-122 P-T0220-5--3 67006-A9266 Q67006-A9270 Q67000-A9267

smd transistor w J 3 58

Abstract: OPERATIONAL AMPLIFIER 181 (315) 701-6751 4707 Dey Road Liverpool, N.Y. 13088 Available to DSCC SMD , Slew Rate Open Loop Voltage Gain 2 Settling Time ±0.1% 2 AV=1 VOUT= 50Vp-p RL=500 VOUT=±25V RL=1K AV , =+125°C Subgroup 3 TA=TC=-40°C 6 Refer to SMD 5962-92152 for electrical parameters for devices purchased as such. 7 , dissipation of the device is equal to the product of the voltage across the output transistor times the output , well as an increase in the voltage across the output transistor. Therefore, for maximum amplifier
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smd transistor w J 3 58 MIL-PRF-38534 MSK181 MSK181Z MSK181G MSK181GZ
Abstract: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev , proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 °C. TD-SCDMA [1][2] f VDS PL(AV) Gp ηD ACPR , TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Ì Ì Ì Ì Ì Ì Integrated , TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor 4. Block diagram RF-input/bias main NXP Semiconductors
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SMD transistor k22

Abstract: SMD transistor k21 Characteristics Units Vbr 600 v if(av) 12 a trr 75 ns Qrr 375 nC irrm 10 a vf 2.0 v Description , Transistor â'" Higher Frequency Operation â'" Reduced Snubbing â'" Reduced Parts Count The HEXFRED , in both the diode and the switching transistor. These HEXFRED advantages can help to significantly , Voltage (V) Absolute Maximum Ratings Parameter Min Typ Max Unite Conditions If(av) Max Average , Case Style SMD-1 - - K-22
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HFA40HF60 SMD transistor k22 SMD transistor k21 k22 smd fast recovery diode 600v 12A SMD K22 12A transistor smd 200AI

transistor 742

Abstract: j494 transistor BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 2 - 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video , VDS (V) 28 PL(AV) (W) 80 Gp (dB) 17.3 D (%) 29 ACPR5M (dBc) 29 [1] 3GPP test model 1 , frequency range NXP Semiconductors BLF8G22LS-270(G)V Power LDMOS transistor 2. Pinning , BLF8G22LS-270(G)V Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) Thermal
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transistor 742 j494 transistor blf8g22ls 8G22LS-270GV

SMD transistor k21

Abstract: (AV) 12 A trr 75 ns Qrr 375 nC ir r m 10 A vf 2.0 600V, 12A , Switching Transistor â'" Higher Frequency Operation â'" Reduced Snubbing â'" Reduced Parts Count , switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to , Max Single Pulse AvalancheCurient â'" â'" 2 Parameter iF(AV) Max Average forward , Case IR Case Style SMD-1 â'" â'" â'" â'" jc 4055452 OOHfaSI 320 K -22 Rated
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BLD6G21L-50

Abstract: BLD6G21LS-50 BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev , proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical performance RF performance at Th = 25 °C. TD-SCDMA [1][2] f VDS PL(AV) Gp D ACPR , integrated Doherty transistor Integrated ESD protection Good pair match (main and peak on the same chip , -50; BLD6G21LS-50 NXP Semiconductors TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor 4
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Abstract: OPERATIONAL AMPLIFIER 181 (315) 701-6751 4707 Dey Road Liverpool, N.Y. 13088 Available to DSCC SMD , TRANSFER CHARACTERISTICS Slew Rate Open Loop Voltage Gain 2 Settling Time ±0.1% 2 AV=1 VOUT= 50Vp-p RL=500 VOUT=±25V RL=1K AV=10 50V Step 4 4 - 6.0 90 - 10 98 15 - 5.0 88 - 10 98 18 - V , =+25°C Subgroup 2 TA=TC=+125°C Subgroup 3 TA=TC=-40°C 6 Refer to SMD 5962-92152 for electrical parameters for , dissipation of the device is equal to the product of the voltage across the output transistor times the output MS Kennedy
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smd transistor bd 37

Abstract: S45 SMD Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES â'¢ SMD , in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. PINNING - SOT223 PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 , 711002b 010303e] 30S Philips Semiconductors Product specification UHF power transistor BLT80 LIMITING , (AV) average collector current - 250 mA 'cm peak collector current f > 1 MHz - 750 mA Ptot total
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smd transistor bd 37 S45 SMD t8 smd transistor TRANSISTOR SMD 3b c4 TRANSISTOR NPN c4 nf SMD TRANSISTOR br-37 MAM043-1 MRA777 URA778 MBA45 0103D4S MSA03S-1
Abstract: BLF6G05LS-200RN Power LDMOS transistor Rev. 2 â'" 8 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at , ï'°C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D , Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 , transistor 6. Characteristics Table 6. Characteristics Tj = 25 ï'°C unless otherwise specified. Symbol NXP Semiconductors
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transistor j241

Abstract: transistor j239 BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 2 - 10 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video , VDS (V) 28 PL(AV) (W) 55 Gp (dB) 19.0 D (%) 29 ACPR5M (dBc) 30 [1] 3GPP test model 1 , frequency range NXP Semiconductors BLF8G22LS-200(G)V Power LDMOS transistor 2. Pinning , BLF8G22LS-200(G)V Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) Thermal
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transistor j241 transistor j239 J241 transistor 8G22LS-200GV

1375k

Abstract: OPERATIONAL AMPLIFIER 181 (315) 701-6751 4707 Dey Road Liverpool, N.Y. 13088 Available to DSCC SMD , TRANSFER CHARACTERISTICS Slew Rate Open Loop Voltage Gain 2 Settling Time ±0.1% 2 AV=1 VOUT= 50Vp-p RL=500 VOUT=±25V RL=1K AV=10 50V Step 4 4 - 6.0 90 - 10 98 15 - 5.0 88 - 10 98 18 - V , =+25°C Subgroup 2 TA=TC=+125°C Subgroup 3 TA=TC=-40°C 6 Refer to SMD 5962-92152 for electrical parameters for , dissipation of the device is equal to the product of the voltage across the output transistor times the output
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1375k

BLF6G20-110

Abstract: BLF6G20LS-110 BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 - 28 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station , PL(AV) Gp D IMD3 ACPR (MHz) Mode of operation (V) (W) (dB) (%) (dBc , -110; BLF6G20LS-110 NXP Semiconductors Power LDMOS transistor 1.3 Applications I RF power amplifiers for , -110 NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal
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