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ATF-55143-BLKG Broadcom Limited RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN visit Digikey Buy
ATF-55143-TR2G Broadcom Limited RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN visit Digikey Buy
ATF-55143-TR1G Broadcom Limited RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN visit Digikey Buy
0293880.MXJ Littelfuse Inc FUSE 2938 ATF 32V SLOW PAL 80A visit Digikey Buy
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ATF-55143 Datasheet

Part Manufacturer Description PDF Type
ATF55143 Agilent Technologies Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original
ATF-55143 Agilent Technologies Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original
ATF-55143 Avago Technologies Single Voltage E-pHEMT Low Current Low Noise +24.2dBm OIP3 in SC-70 Original
ATF-55143-BLK Agilent Technologies FET, Enhancement, 0.18 VThreshold, ID 0.1 A Original
ATF-55143-BLKG Avago Technologies RF FETs, Discrete Semiconductor Products, IC PHEMT 2GHZ 2.7V 10MA SOT-343 Original
ATF-55143-TR1 Agilent Technologies Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original
ATF-55143-TR1 Agilent Technologies FET, Enhancement, 0.18 VThreshold, ID 0.1 A Original
ATF-55143-TR1 Agilent Technologies Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original
ATF-55143-TR1G Avago Technologies RF FETs, Discrete Semiconductor Products, IC TRANS E-PHEMT 2GHZ SOT-343 Original
ATF-55143-TR2 Agilent Technologies Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Original
ATF-55143-TR2 Agilent Technologies FET, Enhancement, 0.18 VThreshold, ID 0.1 A Original
ATF-55143-TR2G Avago Technologies RF FETs, Discrete Semiconductor Products, IC PHEMT 2GHZ 2.7V 10MA SOT-343 Original

ATF-55143

Catalog Datasheet MFG & Type PDF Document Tags

max 1788

Abstract: wy 636 transistor Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and , Package Marking DRAIN SOURCE 5Fx Description Agilent Technologies's ATF-55143 is a high , conventional depletion mode devices. 1 ATF-55143 Absolute Maximum Rating s [1] Symbol Parameter , actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a
Agilent Technologies
Original
max 1788 wy 636 transistor TL 2272 -L4 ATF agilent 5F SC-70 5988-3190EN 5988-3587EN

276 2043 transistor pnp

Abstract: SOT343 C5 Information Part Number ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK No. of Devices 3000 10000 100 , Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package , 's ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-55143 , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol VDS VGS VGD IDS IGS
Agilent Technologies
Original
276 2043 transistor pnp SOT343 C5 transistor pnp 1.6-2.2

ATF-55143

Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies' ATF-55143 is a low noise , typical bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-55143 , current. The ATF-55143 is housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The 400 micron gate width of the ATF-55143 makes it ideal for applications in the 2 to 10 GHz frequency range
Avago Technologies
Original
agilent pHEMT transistor LNA LOW NOISE AMPLIFIER SOT 23 AJW ATF-54143 LL1608-F2N7S LL1608-FH10NK LL1608-FH2N7S 5988-3399EN 5989-3007EN

lna 2.5 GHZ s parameter ads design

Abstract: 5Ghz lna transistor Linear Analysis The ATF55143.s2p file can be downloaded from the Agilent Wireless Design Center web , Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise , , the ATF55143 amplifier will provide 10.0 to 11.0 dB gain, 1.2 dB noise figure and an output , Q1 ATF-55143 C1 C4 Zo Zo C8 L2 L1 LL1 LL2 C5 C2 R6 R1 C3 R2 R5 R3 C7 Q2, Q3 BCV62B Vdd R4 Introduction The Agilent Technologies ATF-55143 is a low noise
Agilent Technologies
Original
lna 2.5 GHZ s parameter ads design 5Ghz lna transistor Curtice S402D agilent pHEMT transistor MTT-28 5988-5846EN ECEN4228 ATF-551M4

agilent pHEMT transistor

Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER TouchstoneTM format. The ATF55143.s2p file can be downloaded from the Agilent Wireless Design Center web site , Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications , high linearity. Besides having a very low typical noise figure (0.6 dB), the ATF-55143 uses a 2.0 Volt bias and provides a +21 dBm intercept point at 10 mA drain current. In addition, the ATF-55143 , current creating a voltage differential between the gate and source terminals. The ATF-55143 is one of
Agilent Technologies
Original
transistor ajw bjt differential amplifier application circuits ATF-5X143 ATF pHEMT advanced design system fet curtice AN-1281 5988-9555EN

276 2043 transistor pnp

Abstract: C0115 Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , the ATF-55143 ideal for cellular/PCS handsets, wireless data systems (WLL/RLL, WLAN and MMDS) and , Package Marking DRAIN SOURCE 5Fx Description Agilent Technologies's ATF-55143 is a high , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units , actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a
Agilent Technologies
Original
C0115 0840 057 5988-8410EN 5989-0009EN

MUR 1604

Abstract: cir 2272 limit the gate current of enhancement mode devices such as the ATF55143. This is especially important , ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies' ATF55143 is a high dynamic range, very low , The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS , Application Note A004R: Electrostatic Discharge Damage and Control. ATF-55143 Absolute Maximum Ratings [1
Avago Technologies
Original
MUR 1604 cir 2272 lambda lg 532 power supply tl 2272 l4 b 1237 4L/SOT-343 5989-3750EN AV02-0923EN

ATF-55143

Abstract: ECEN4228 . Frequency 6228-08 AN 1285 6.0 The ATF55143.s2p file can be downloaded from the Avago , Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise , printed inductors for small size and low cost. When biased at a Vds of 2 volts and Ids of 15 mA, the ATF-55143 , schematic is shown in Figure 1, with component values in Table 2. Q1 ATF-55143 C1 Table 1. Design , current while still running from a 3.3 volt supply voltage. The Avago Technologies ATF-55143 is a low
Avago Technologies
Original
ATF-54143 application notes Component Library AN-1285

SOT 23 AJW

Abstract: ATF55143 ATF55143. This is especially important when the device is driven to P1dB or Psat. The amplifier uses a , High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Agilent Technologies' ATF-55143 is a low noise , biasing the typical bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-55143 , current. The ATF-55143 is housed in a 4lead SC-70 (SOT-343) surface mount plastic package. The 400
Agilent Technologies
Original
LL1608-FH5N6K

transistor ajw

Abstract: ATF55143 a two port s-parameter file using TouchstoneTM format. The ATF55143.s2p file can be downloaded , ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications , linearity. Besides having a very low typical noise figure (0.6 dB), the ATF-55143 uses a 2.0 Volt bias and provides a +21 dBm intercept point at 10 mA drain current. In addition, the ATF-55143 is an enhancement , differential between the gate and source terminals. The ATF-55143 is one of a family of new high dynamic
Avago Technologies
Original
AN-1222 55143

ATF pHEMT

Abstract: ATF at 2.4 Ghz E-pHEMT FETs include the ATF-54143 and ATF-55143 in SC-70 package, and the ATF-541M4 and ATF-551M4 in , power amplifier for 802.11a and HiperLAN/2 wireless LAN at 5 GHz. The ATF-55143 and ATF-551M4 are , Amplifier for 802.11a and 802.11b Wireless LAN · ATF-55143, ATF-551M4 ­ LNA for Cellular/PCS/W-CDMA , frequency · Optimized for 3V operation ATF-55143 2.7 10 2 0.6 18 24 14 4-lead SC
Avago Technologies
Original
ATF at 2.4 Ghz Avago e-phemt AVAGO TECHNOLOGIES wireless ATF54143 5988-5089EN

L-07C1N8ST

Abstract: fet curtice nonlinear model transistor can be modeled with a two port s-parameter file using TouchstoneTM format. The ATF55143.s2p file , ATF-55143 Low Noise 2300 MHz Amplifier Application Note 5294 Introduction Description , very low typical noise figure (0.5 dB), the ATF-55143 uses a 2.7 Volt bias and provides a +24 dBm intercept point at 10 mA drain current. In addition, the ATF-55143 is an enhancement mode device and thus , be biased from a supply voltage of 3.0-3.3 volt range. The ATF-55143 is one of a family of new
Avago Technologies
Original
L-07C1N8ST fet curtice nonlinear model 250R07C8R2FV4T sdars AV01-0376EN

ATF-55143-TR1G

Abstract: PHEMT marking code a Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets , Technologies's ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4 , devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units VDS Drain-Source , ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical
Agilent Technologies
Original
PHEMT marking code a hemt low noise die TL 924 zo 107 marking code ga sot 363 D 901 S 45 T 5989-1921EN

TL 2272 -L4

Abstract: ATF-55143-TR1G mode devices such as the ATF55143. This is especially important when the device is driven to P1dB or , ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago Technologies' ATF55143 is a high dynamic range, very low noise , The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS , Application Note A004R: Electrostatic Discharge Damage and Control. ATF-55143 Absolute Maximum Ratings [1
Avago Technologies
Original
21716-2 362 marking code sot 23-6 0503553

ATF-55143-TR1

Abstract: A004R Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets , Technologies's ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4 , devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units VDS Drain-Source , ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical
Agilent Technologies
Original
SC 2272 L4 gm 2211

C0143

Abstract: L 2608 Information Part Number ATF-55143-TR1G ATF-55143-TR2G ATF-55143-BLKG No. of Devices 3000 10000 100 , ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago Technologies' ATF-55143 is a high dynamic range, very low noise, single , gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets, wireless data , Control. ATF-55143 Absolute Maximum Ratings [1] Symbol VDS VGS VGD IDS IGS Pdiss Pin max
Avago Technologies
Original
C0143 L 2608 IR 9516

agilent RF Marking 07

Abstract: 55143 . Ordering Information Part Number ATF-55143-TR1 ATF-55143-TR2 ATF-55143-BLK No. of Devices 3000 10000 , Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package , available ­ Ideal for high volume applications About the Product Agilent Technologies's ATF-55143 is a , mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-55143 , . ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical
Agilent Technologies
Original
agilent RF Marking 07 low noise high frequency HEMT from agilent 0* dbm sot343 Date code character identifies month of manufacture 5988-3839EN

HEMT marking P

Abstract: ATF-55143 Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets , intercept DRAIN SOURCE 5Fx Description Agilent Technologies's ATF-55143 is a high dynamic range , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units , actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a
Agilent Technologies
Original
HEMT marking P

TL 2272 -L4

Abstract: 032871 limit the gate current of enhancement mode devices such as the ATF55143. This is especially important , ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies' ATF55143 is a high dynamic range, very low , combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS hand sets , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units
Avago Technologies
Original
032871 01257 009522 tuner LG HEMT Amplifier 06183

276 2043 transistor pnp

Abstract: lambda lg 532 power supply Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic , high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS handsets , intercept DRAIN SOURCE 5Fx Description Agilent Technologies's ATF-55143 is a high dynamic range , conventional depletion mode devices. ATF-55143 Absolute Maximum Ratings [1] Symbol Parameter Units , actual measurements. 2 ATF-55143 Electrical Specifications TA = 25°C, RF parameters measured in a
Agilent Technologies
Original
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