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APTGT200H120G Microsemi Corporation Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, 12 PIN visit Digikey Buy

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APTGT200H120 Datasheet

Part Manufacturer Description PDF Type
APTGT200H120 Advanced Power Technology Full - Bridge Fast Trench + Field Stop IGBT Power Module Original
APTGT200H120G Microsemi Full - Bridge Fast Trench + Field Stop IGBT Power Module Original

APTGT200H120

Catalog Datasheet MFG & Type PDF Document Tags

APTGT200H120

Abstract: APTGT200H120 VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop IGBT , . APT website ­ http://www.advancedpower.com 1-5 APTGT200H120 ­ Rev 0 Q1 G1 APTGT200H120 , 2-5 APTGT200H120 ­ Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT200H120 , APT website ­ http://www.advancedpower.com 3-5 APTGT200H120 ­ Rev 0 May, 2005 Package outline (dimensions in mm) APTGT200H120 Typical Performance Curve Output Characteristics (VGE =15V
Advanced Power Technology
Original

APT0502

Abstract: APT0601 APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop IGBT , APTGT200H120G ­ Rev 1 Q1 G1 APTGT200H120G All ratings @ Tj = 25°C unless otherwise specified ICES , Characteristic mJ 2-5 APTGT200H120G ­ Rev 1 Electrical Characteristics APTGT200H120G Thermal and , www.microsemi.com 3-5 APTGT200H120G ­ Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGT200H120G Typical Performance Curve Output Characteristics (VGE =15V) 400 TJ=125°C V GE
Microsemi
Original
APT0502 APT0601
Abstract: APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop , www.microsemi.com 1-5 APTGT200H120G â'" Rev 1 Symbol VCES APTGT200H120G All ratings @ Tj = 25 , July, 2006 IRM Test Conditions mJ 2-5 APTGT200H120G â'" Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT200H120G Thermal and package characteristics , www.microsemi.com 3-5 APTGT200H120G â'" Rev 1 July, 2006 SP6 Package outline (dimensions in mm Microsemi
Original

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 APTGT200H120G VCES = 1200V IC = 200A @ Tc = 80°C Full - Bridge Fast Trench + Field Stop , www.microsemi.com 1-6 APTGT200H120G â'" Rev 2 October, 2012 Symbol VCES APTGT200H120G All ratings @ Tj , 350 600 Unit V µA A 2.1 V ns µC mJ 2-6 APTGT200H120G â'" Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT200H120G Thermal and package , outline (dimensions in mm) www.microsemi.com 3-6 APTGT200H120G â'" Rev 2 October, 2012 See
Microsemi
Original
SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 2000W mosfet power inverter IGBT triple modules 100A 10F-A