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APT80GA90B Microsemi Corporation Insulated Gate Bipolar Transistor, 145A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy

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Part : APT80GA90B Supplier : Microsemi Manufacturer : Richardson RFPD Stock : - Best Price : $6.52 Price Each : $6.87
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APT80GA90B Datasheet

Part Manufacturer Description PDF Type
APT80GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 80; Original

APT80GA90B

Catalog Datasheet MFG & Type PDF Document Tags

ic 4560

Abstract: APT80GA90B APT80GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT80GA90B G C E Single die IGBT TYPICAL APPLICATIONS , (off) tf APT80GA90B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V
Microsemi
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MIC4452 ic 4560 JESD24-1
Abstract: APT80GA90B_S TJ = 25° unless otherwise specifi ed C Test Conditions Min Typ Capacitance VGE = , , the specifications and information contained herein. Typical Performance Curves APT80GA90B_S , Performance Curves APT80GA90B_S 300 VCE = 600V TJ = 25°C, or 125°C RG = 4.7Ω L = 100μH 22 , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT80GA90B_S C , 2011 10 -5 052-6324 Rev C Z JC, THERMAL IMPEDANCE (°C/W) 0.25 APT80GA90B_S 10 Microsemi
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APT80GA90S
Abstract: 1389 18 31 192 128 2813 2082 239 APT80GA90B_S Min Typ 4560 411 62 200 30 72 nC pF Parameter , . 052-6324 Rev C 6 - 2011 Typical Performance Curves 100 V GE APT80GA90B_S 350 TJ= 125°C TJ , 25°C, or 125°C RG = 4.7 L = 100H APT80GA90B_S 300 250 200 VGE =15V,TJ=125°C 150 VGE , Temperature 0 Typical Performance Curves 10000 Cies APT80GA90B_S 1000 IC, COLLECTOR CURRENT (A , , Junction-To-Case vs Pulse Duration 1 052-6324 Rev C 6 - 2011 APT80GA90B_S 10% Gate Voltage td(on Microsemi
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APT80GA90S

Abstract: APT80GA90B Charge Switching Safe Operating Area Turn-On Delay Time APT80GA90B_S TJ = 25°C unless otherwise , GE = 15V TJ= 125°C IC, COLLECTOR CURRENT (A) TJ= 55°C 80 APT80GA90B_S 350 TJ= 150 , Performance Curves APT80GA90B_S 300 VCE = 600V TJ = 25°C, or 125°C RG = 4.7 L = 100H 22 td(OFF , Performance Curves APT80GA90B_S 1000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 10000 , . 052-6324 Rev B 3 - 2009 FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL APT80GA90B_S 10% Gate
Microsemi
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single phase inverter IGBT

Abstract: wind inverter -247 4.0 APT80GA90B MOS 8 IGBT APT75DQ100BG 900 2.5V TO-247 5.0 APT31M100B2 MOS
Microsemi
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APT60N60BCSG single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter 50/60H 00E-07 00E-06 50E-06

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter APT64GA90B APT80GA90B TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 14 17 20 30
Microsemi
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smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 10F-A

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S APT64GA90B APT80GA90B Package Style TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or
Microsemi
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SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 D3 T-MAX® or TO-264 APT35GA90B APT43GA90B APT64GA90B APT80GA90B TO-247 or D3 TO
Microsemi
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N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN 2000W mosfet power inverter IGBT triple modules 100A APTES80DA120C3G APT30DQ60BCTG

VRF2933FL

Abstract: VRF164FL Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT80GA90B2D40_LD40 TJ = 25°C unless otherwise , Characteristic / Test Conditions IF(AV) IF(RMS) IFSM APT80GA90B2D40_LD40 Maximum Average Forward Current , 3500 T = 125°C J V = 667V 350 50 TJ = -55°C 0 APT80GA90B2D40_LD40 400 trr , TJ = 25°C unless otherwise specified APT80GA90B2D40_LD40 Vr diF /dt Adjust +18V , APT80GA90B2D40 APT80GA90LD40 900V APT80GA90B2D40 High Speed PT IGBT POWER MOS 8® is a high
Microsemi
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VRF2933FL VRF164FL Non - Isolated Buck, application ARF463AP1 DRF1301 MS5-001-14