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APT75GP120JDQ3 Microsemi Corporation Insulated Gate Bipolar Transistor, 128A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4 visit Digikey Buy

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Part : APT75GP120JDQ3 Supplier : Microsemi Manufacturer : Future Electronics Stock : - Best Price : $32.57 Price Each : $34.73
Part : APT75GP120JDQ3 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : 13 Best Price : $34.07 Price Each : $36.92
Part : APT75GP120JDQ3 Supplier : Microchip Technology Manufacturer : Chip One Exchange Stock : 2,883 Best Price : - Price Each : -
Part : APT75GP120JDQ3 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 439 Best Price : $32.4795 Price Each : $38.2688
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APT75GP120JDQ3 Datasheet

Part Manufacturer Description PDF Type
APT75GP120JDQ3 Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 1200V 128A 543W SOT227 Original
APT75GP120JDQ3 Advanced Power Technology POWER MOS 7 IGBT Original

APT75GP120JDQ3

Catalog Datasheet MFG & Type PDF Document Tags

APT75GP120JDQ3

Abstract: IC 7458 APT75GP120JDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 ® E E POWER MOS 7 , APT75GP120JDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 I C1 , DYNAMIC CHARACTERISTICS Symbol APT75GP120JDQ3 Test Conditions Characteristic Cies Input , CURRENT (A) 140 APT75GP120JDQ3 160 V = 15V GE 250µs PULSE TEST , 10 0 APT75GP120JDQ3 350 30 VCE = 600V TJ = 25°C, TJ =125°C RG = 5 L = 100 µH 300
Advanced Power Technology
Original
IC 7458 igbt APT75GP120JDQ3 ice power 1000a APT10035LLL E145592
Abstract: APT75GP120JDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 ® E E POWER MOS , APT75GP120JDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 I C1 , DYNAMIC CHARACTERISTICS Symbol APT75GP120JDQ3 Test Conditions Characteristic Cies Input , CURRENT (A) 140 APT75GP120JDQ3 160 V = 15V GE 250µs PULSE TEST , 10 0 APT75GP120JDQ3 350 30 VCE = 600V TJ = 25°C, TJ =125°C RG = 5â"¦ L = 100 µH Advanced Power Technology
Original

APT75GP120JDQ3

Abstract: TYPICAL PERFORMANCE CURVES ® APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT ® E , 1 All Ratings: TC = 25°C unless otherwise specified. APT75GP120JDQ3 UNIT Volts 1200 ±20 128 , Total Gate Charge 3 APT75GP120JDQ3 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate , 40 20 0 APT75GP120JDQ3 V = 10V GE 250µs PULSE TEST , =25°C VGE =15V,TJ=125°C APT75GP120JDQ3 VGE = 15V 20 10 VCE = 600V TJ = 25°C, TJ =125°C RG = 5 L =
Advanced Power Technology
Original

sot-227 footprint

Abstract: VRF2933 -247 APT13GP120BDQ1 APT35GP120JDQ2 APT25GP120BDQ1 APT45GP120JDQ2 APT35GP120B2DQ2 APT45GP120B2DQ2 APT75GP120JDQ3
Microsemi
Original
sot-227 footprint VRF2933 ARF1511 DRF1200 SP6-P ARF521

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S APT13GP120BDQ1G APT25GP120BDQ1G APT35GP120B2DQ2G APT45GP120B2DQ2G APT45GP120JDQ2 APT75GP120JDQ3 APT20GT60KRG
Microsemi
Original
SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge DO215AA MIL-PRF-19500 DO-41 RT100KP

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 40 23 APT75GP120JDQ3 ISOTOP T-MAX®[B2] TO-264[L] Part Numbers for L packages replace
Microsemi
Original
N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 2000W mosfet power inverter IGBT triple modules 100A APTES80DA120C3G 10F-A