500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
APT75GP120JDQ3 Microsemi Corporation Insulated Gate Bipolar Transistor, 128A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4 visit Digikey

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : APT75GP120JDQ3 Supplier : Microsemi Manufacturer : Future Electronics Stock : - Best Price : $35.0175 Price Each : $35.0175
Part : APT75GP120JDQ3 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : - Best Price : $34.07 Price Each : $36.92
Shipping cost not included. Currency conversions are estimated. 

APT75GP120JDQ3 Datasheet

Part Manufacturer Description PDF Type
APT75GP120JDQ3 Advanced Power Technology POWER MOS 7 IGBT Original
APT75GP120JDQ3 Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 1200V 128A 543W SOT227 Original

APT75GP120JDQ3

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: APT75GP120JDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 ® E E POWER MOS 7 , APT75GP120JDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 I C1 , DYNAMIC CHARACTERISTICS Symbol APT75GP120JDQ3 Test Conditions Characteristic Cies Input , CURRENT (A) 140 APT75GP120JDQ3 160 V = 15V GE 250us PULSE TEST , 10 0 APT75GP120JDQ3 350 30 VCE = 600V TJ = 25°C, TJ =125°C RG = 5 L = 100 uH 300 Advanced Power Technology
Original
IC 7458 igbt APT75GP120JDQ3 APT10035LLL ice power 1000a E145592
Abstract: APT75GP120JDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 ® E E POWER MOS , APT75GP120JDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 I C1 , DYNAMIC CHARACTERISTICS Symbol APT75GP120JDQ3 Test Conditions Characteristic Cies Input , CURRENT (A) 140 APT75GP120JDQ3 160 V = 15V GE 250Âus PULSE TEST , 10 0 APT75GP120JDQ3 350 30 VCE = 600V TJ = 25°C, TJ =125°C RG = 5â"¦ L = 100 ÂuH Advanced Power Technology
Original
Abstract: TYPICAL PERFORMANCE CURVES ® APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT ® E , 1 All Ratings: TC = 25°C unless otherwise specified. APT75GP120JDQ3 UNIT Volts 1200 ±20 128 , Total Gate Charge 3 APT75GP120JDQ3 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate , 40 20 0 APT75GP120JDQ3 V = 10V GE 250us PULSE TEST , =25°C VGE =15V,TJ=125°C APT75GP120JDQ3 VGE = 15V 20 10 VCE = 600V TJ = 25°C, TJ =125°C RG = 5 L = Advanced Power Technology
Original
Abstract: -247 APT13GP120BDQ1 APT35GP120JDQ2 APT25GP120BDQ1 APT45GP120JDQ2 APT35GP120B2DQ2 APT45GP120B2DQ2 APT75GP120JDQ3 Microsemi
Original
sot-227 footprint VRF2933 SP6-P DRF1200 ARF1511 ARF521
Abstract: APT13GP120BDQ1G APT25GP120BDQ1G APT35GP120B2DQ2G APT45GP120B2DQ2G APT45GP120JDQ2 APT75GP120JDQ3 APT20GT60KRG Microsemi
Original
SOT-227 lead frame 5kw smps full bridge S.M.P.S 5kw SMPS full bridge PLAD15KP Fast Recovery Rectifiers mx gp 043 1.5ke series MIL-PRF-19500 DO-41 RT100KP
Abstract: 40 23 APT75GP120JDQ3 ISOTOP T-MAX®[B2] TO-264[L] Part Numbers for L packages replace Microsemi
Original
N-channel MOSFET 800v 50a to-247 DRF1400 SMPS 1000w IGBT REFERENCE DESIGN semiconductors cross reference APT10026L2FLLG IGBT triple modules 100A 10F-A