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APT64GA90B Microsemi Corporation Insulated Gate Bipolar Transistor, 117A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy
APT64GA90B2D30 Microsemi Corporation Insulated Gate Bipolar Transistor, 117A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TMAX-3 visit Digikey Buy

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Part : APT64GA90LD30 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : 5,400 Best Price : $7.16 Price Each : $7.55
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APT64GA90B Datasheet

Part Manufacturer Description PDF Type
APT64GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 64; Original
APT64GA90B2D30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; Original

APT64GA90B

Catalog Datasheet MFG & Type PDF Document Tags

3525 boost

Abstract: IGBT full bridge APT64GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT , high frequency. ® FEATURES APT64GA90B G C E Single die IGBT TYPICAL APPLICATIONS , (off) tf APT64GA90B TJ = 25°C unless otherwise specified Min Typ Capacitance VGE = 0V
Microsemi
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MIC4452 3525 boost IGBT full bridge JESD24-1
Abstract: Switching Safe Operating Area Turn-On Delay Time APT64GA90B_S TJ = 25° unless otherwise specifi ed , . Typical Performance Curves APT64GA90B_S 300 100 V GE = 15V IC, COLLECTOR CURRENT (A , (NORMALIZED) 1.15 Typical Performance Curves APT64GA90B_S 200 VCE = 600V TJ = 25°C, or 125 , Losses vs Junction Temperature Typical Performance Curves APT64GA90B_S 1000 10,000 1,000 , 052-6325 Rev D Z JC, THERMAL IMPEDANCE (°C/W) 0.30 APT64GA90B_S 10% TJ = 125°C Gate Microsemi
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APT64GA90S
Abstract: TJ = +125°C 18 26 131 104 1192 1088 17 27 181 171 1857 2311 193 APT64GA90B_S Typ 3525 318 53 162 , 100 V GE APT64GA90B_S 300 15V 13V 11V 10V 200 9V 8V 7V 50 6V = 15V TJ= 55°C TJ= 125°C IC , (OFF), TURN-OFF DELAY TIME (ns) VCE = 600V TJ = 25°C, or 125°C RG = 4.7 L = 100H APT64GA90B_S , APT64GA90B_S 1,000 10 Coes 100 1 Cres 0 100 200 300 400 500 600 700 VCE, COLLECTOR-TO-EMITTER , , Junction-To-Case vs Pulse Duration 10 052-6325 Rev D 6 - 2011 APT64GA90B_S 10% Gate Voltage td(on Microsemi
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DIODE 76A

Abstract: APT64GA90B (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT64GA90B_S , contained herein. Typical Performance Curves 100 V GE = 15V APT64GA90B_S 300 TJ= 55 , ) APT64GA90B_S 200 20 18 16 14 12 VGE =15V,TJ=125°C 160 120 VGE =15V,TJ=25°C 80 40 VCE , Temperature Typical Performance Curves APT64GA90B_S 1000 10,000 IC, COLLECTOR CURRENT (A) C , APT64GA90B_S 10% TJ = 125°C Gate Voltage td(on) APT30DQ100 90% tr IC V CC V CE
Microsemi
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DIODE 76A

DIODE 76A

Abstract: APT64GA90B (off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT64GA90B_S , contained herein. Typical Performance Curves 100 V GE = 15V APT64GA90B_S 300 TJ= 55 , ) APT64GA90B_S 200 20 18 16 14 12 VGE =15V,TJ=125°C 160 120 VGE =15V,TJ=25°C 80 40 VCE , Temperature Typical Performance Curves APT64GA90B_S 1000 10,000 1,000 Coes 100 Cres 10 , IMPEDANCE (°C/W) 0.30 APT64GA90B_S 10% TJ = 125°C Gate Voltage td(on) APT30DQ100 90
Microsemi
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single phase inverter IGBT

Abstract: wind inverter APT40DQ100BG 800 200m T-Max 2.7 APT64GA90B MOS 8 IGBT APT60DQ100BG 900 2.5V TO
Microsemi
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APT60N60BCSG single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter 50/60H 00E-07 00E-06 50E-06

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S APT64GA90B APT80GA90B Package Style TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or , APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40
Microsemi
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SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 APT64GA90B APT80GA90B TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 14 17 20 30
Microsemi
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SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 2000W mosfet power inverter IGBT triple modules 100A 10F-A

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter D3 T-MAX® or TO-264 APT35GA90B APT43GA90B APT64GA90B APT80GA90B TO-247 or D3 TO , -264 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 TO-247 or D3
Microsemi
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smps 1000W 600V 300A igbt dc to dc boost converter smps 500w half bridge DRF1300 1000w inverter MOSFET 3000w inverter mosfet circuit

VRF2933FL

Abstract: VRF164FL APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , , even APT64GA90B2D30 when switching at high frequency. TO -24 7 Combi (IGBT and Diode
Microsemi
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VRF2933FL VRF164FL Non - Isolated Buck, application ARF463AP1 MS5-001-14

LE79Q2281

Abstract: PLAD15KP SSOA td(on) tr td(off) tf APT64GA90B2D30_LD30 TJ = 25°C unless otherwise specified Typ , / Test Conditions APT64GA90B2D30_LD30 Maximum Average Forward Current (TC = 102°C, Duty Cycle = 0.5 , (ns) 500 90 APT64GA90B2D30_LD30 0.6 30 25 20 0.4 Qrr 15 10 0.2 5 0.0 , specified APT64GA90B2D30_LD30 Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30H trr/Qrr , APT64GA90B2D30 APT64GA90LD30 900V APT64GA90B2D30 High Speed PT IGBT POWER MOS 8® is a high
Microsemi
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LE79Q2281 IC ZL70572 STK 084 power amplifier transistor SI 6822 LED Driver aplications GC4600

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A APT64GA90LD30 APT64GA90B2D30 900V High Speed PT IGBT APT64GA90LD30 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent , , even APT64GA90B2D30 when switching at high frequency. TO -24 7 Combi (IGBT and Diode
DigiKey Electronics Catalog
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schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38
Abstract: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide , , even APT64GA90B2D30 when switching at high frequency. TO -2 47 Combi (IGBT and Diode Microsemi
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