NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| APT56M50B2 | Microsemi Corporation | Power MOS 8 |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA APT56M50B2_L 500 VBR(DSS)/TJ , , DRAIN CURRENT (A) T = 125°C 90 160 0 APT56M50B2_L 100 APT56M50B2_L 250 250 , APT56M50B2 APT56M50L APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent , enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT56M50B2 APT56M50L APT56M50L Single ... | Original |
4 pages, |
MIC4452 APT56M50B2 APT56M50L APT56M50B2 abstract |
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| Abstract: (DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA APT56M50B2_L 500 VBR(DSS)/TJ , APT56M50B2_L 100 APT56M50B2_L 250 250 100 100 I I DM 13us 100us 1ms Rds(on , APT56M50B2 APT56M50L APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent , enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT56M50B2 APT56M50L APT56M50L Single ... | Original |
4 pages, |
MIC4452 APT56M50L APT56M50B2 APT56M50B2 abstract |
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| Abstract: (DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA APT56M50B2_L 500 VBR(DSS)/TJ , , DRAIN CURRENT (A) T = 125°C 90 160 0 APT56M50B2_L 100 APT56M50B2_L 250 250 , APT56M50B2 APT56M50L APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent , enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT56M50B2 APT56M50L APT56M50L Single ... | Original |
4 pages, |
MIC4452 APT56M50L APT56M50B2 APT56M50B2 abstract |
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| Abstract: Min VGS = 0V, ID = 250uA Reference to 25°C, ID = 250uA Parameter VBR(DSS) APT56M50B2_L , right to change, without notice, the specifications and information contained herein. APT56M50B2_L , APT56M50B2_L 250 250 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 13us , APT56M50B2 APT56M50L APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET Power MOS 8TM is a high speed, high , enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT56M50B2 APT56M50L APT56M50L D ... | Original |
4 pages, |
MIC4452 APT56M50L APT56M50B2 APT56M50B2 abstract |
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| Abstract: , ID = 28A VGS = VDS, ID = 2.5mA VDS = 500V VGS = 0V TJ = 25°C TJ = 125°C APT56M50B2_L Typ 0.60 , APT56M50B2_L 200 V GS = 10V 100 TJ = -55°C T = 125°C 90 80 ID, DRIAN CURRENT (A) 70 60 50 40 30 , 0 8-2011 050-8073 Rev C TJ = 150°C APT56M50B2_L 250 100 IDM 250 100 ID, DRAIN CURRENT (A , APT56M50B2 APT56M50L APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET Power MOS 8TM is a high speed, high , the high avalanche energy capability. T-Ma x TM TO-264 APT56M50B2 APT56M50L APT56M50L D Single die ... | Original |
4 pages, |
APT56M50B2 APT56M50L APT56M50B2 abstract |
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| Abstract: TO-247 or D3 41 APT41H50B APT41H50B TO-247 or D3 0.10 56 APT56M50B2 56 APT56F50B2 APT56F50B2 38 ... | Original |
36 pages, |
sot-227 footprint Full bridge SMPS 3000w smps ARF476FL smps 2000W ARF1500 SP6-P ARF463AG 1000w inverter MOSFET APT30GT60BRG VRF2933 1000W solar inverter DRF1400 1000W solar power inverter datasheet abstract |
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| Abstract: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi's High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic contamination. These and other defects lead to early life failures, and screening for them is particularly important in large die devices. The stress tests that constitute Microsemi's high-reliabil ... | Original |
45 pages, |
power 3000w PFC 3000w smps 450 watt smps Design 5kw smps full bridge S.M.P.S DIODE TVS 170v Fast Recovery Rectifiers mx gp 043 igbt 600v, dual INFINEON TVS diode process Microsemi Catalog 110v smps circuits 1500w tvs diode SMD DO215AA datasheet abstract |
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| Abstract: HS1838 APT35DL120HJ 500 0.13 0.10 0.10 0.075 0.075 0.062 0.062 0.036 56 38 75 51 84 58 103 APT56M50B2 APT38M50J APT38M50J APT75M50B2 APT75M50B2 ... | Original |
40 pages, |
APT140N65JC6 APT100S20B 500w half bridge smps 2000w pfc igbt DRF1400 FAST RECOVERY DIODE dual 20a 600 to247 SP6-P SMPS 1000w IGBT REFERENCE DESIGN silicon carbide JFET SiC JFET 1000w Induction motor inverter MOSFET resonant converter for welding push pull converter 1000W output datasheet abstract |
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| Abstract: NEW IN THIS ISSUE! Digital Signal Processors, iCoupler®, iMEMS® and iSensorTM . . . . . 805, 2707, 2768-2769 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455 SiC MESFETs, SiC Diodes and XLamp® LEDs. . . . . . . . . . . Pages 578, 1353, 2839 3. 6E (Detailed Index - See Pages 3-24) Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 Active RF Product and Antennas . . . . . . . . . . . . 569-635 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . ... | Original |
2896 pages, |
Seiko Epson Printer LQ 300 II bipolar transistor 2sc 4977 i ball 450 watt smps repairing circuit diagram wireless spy camera OS 430 NR - 14d, VARISTOR 562j 1000V capacitor 600va ups circuit diagrams Burr-Brown IC ina118u free sim 300 gsm module VR 0511 600va numeric ups circuit diagrams schematic diagram atx Power supply 500w datasheet abstract |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FCH22N60N | FCH22N60N Buy | APT56M50B2 Buy | Microsemi Corporation | Close | Power MOSFET | 600V N-Channel MOSFET, SupreMOS |
| FCH47N60N | FCH47N60N Buy | APT56M50B2 Buy | Microsemi Corporation | Close | Power MOSFET | 600V N-Channel MOSFET, SupreMOS |