Datasheet Search Results			1 - 2 of about 2 for APT50M60L2VR
	APT50M60L2VR	Advanced Power Technology	N-Channel enhancement mode power MOSFET	33.53 Kb,  2 Pages.
	APT50M60L2VR	Microsemi Corporation	Power MOS V MOSFET	156.03 Kb,  5 Pages.

Fulltext Datasheet Results		1 - 5 of about 5 for APT50M60L2VR
	First line: APT50M60L2VR 500V 0.060 POWER MOSFET Power generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density reduces on-resistance. Power also achieves faster switching speeds through optimized gate layout. Abstract: .. APT50M60L2VR. 500V 500V 77A 0.060Ω Ω Ω Ω Ω. G. D. S. Power MOS V ® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing ..  Tags: APT50M60L2VR   APT50M60L2VR	156.03 Kb	5 Pages	Original
	First line: APT50M60L2VR 500V 0.060W Power generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density reduces on-resistance. Power also achieves faster switching speeds through optimized gate layout. Abstract: .. DYNAMIC CHARACTERISTICS APT50M60L2VR. Symbol. Ciss Coss Crss Qg. Qgs Qgd td on tr td off tf. Test Conditions. VGS = 0V VDS = 25V f = 1 MHz. VGS = 10V VDD = 0.5 VDSS ID = 0.5 ID[Cont.] @ 25 °C VGS = 15V. VDD = 0.5 ..  Tags:   APT50M60L2VR	33.53 Kb	2 Pages	Original
	First line: 1200 volt mosfet APT8075BVR APT100GF60LR* FREDFETs* sot-227 footprint Discrete Power Products Advanced Power Technology Technology. Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments t Abstract: .. 500 0.060 77 APT50M60L2VR APT50M60L2VFR APT50M60L2VFR . 1400 0.500 23 APT14050JVR APT14050JVR APT14050JVFR APT14050JVFR . 1200 0.800 15 APT12080JVR APT12080JVR APT12080JVFR APT12080JVFR . 0.400 26 APT12040JVR APT12040JVR APT12040JVFR APT12040JVFR . 1000 0.500 19 APT10050JVR APT10050JVR APT10050JVFR APT10050JVFR ..  Tags: FREDFETs* APT100GF60LR* APT8075BVR 1200 volt mosfet sot-227 footprint  smps new  smps high power  isotop bipolar  igbt high power  IGBT D-Series  APT8024jll*  APT75GP120JDF3  APT6*  APT50M75JLL  APT5024BVFR   datasheet abstract..	1747.86 Kb	20 Pages	Original
	First line: igbt APT75GP120JDQ3 ARF463A vrf2933* ARF521 sot-227 footprint Power Semiconductors Power Modules Power MOSFETs Power Products Group Abstract: .. 500 0.060 77 APT50M60L2VR APT50M60L2VFR APT50M60L2VFR . 1400 0.500 23 --- APT14050JVFR APT14050JVFR . 1000 0.050 19 APT10050JVR APT10050JVR APT10050JVFR APT10050JVFR . 0.430 22 APT10043JVR APT10043JVR --- 0.250 34 APT10025JVR APT10025JVR APT10025JVFR APT10025JVFR . 800 0.300 25 APT8030JVR APT8030JVR ..  Tags: sot-227 footprint ARF521 vrf2933* ARF463A igbt APT75GP120JDQ3   datasheet abstract..	2834.19 Kb	32 Pages	Original
	First line: APTLM50H10FRT APTGU180DA120 APT100GF60LR* induction furnace using igbt APTGU180DA120* Advanced Power Technology Technology. Beginning with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. c Abstract: .. 500 0.060 77 APT50M60L2VR APT50M60L2VFR APT50M60L2VFR . 1400 0.500 23 - - - APT14050JVFR APT14050JVFR . 1200 0.800 15 - - - APT12080JVFR APT12080JVFR . 0.400 26 - - - APT12040JVFR APT12040JVFR . 1000 0.500 19 APT10050JVR APT10050JVR APT10050JVFR APT10050JVFR . 0.430 22 APT10043JVR APT10043JVR ..  Tags: APTGU180DA120* induction furnace using igbt APT100GF60LR* APTLM50H10FRT sot-227 footprint  SiC IGBT High Power Modules  IGBT D-Series  IGBT Designers Manual  cree MOS  APTM50HM75SCT  APTM50AM24SC  APTLGF210U120T  APTGU180DA120  APTGT600U120D4  APT75GP120JDF3   datasheet abstract..	2210.96 Kb	36 Pages	Original

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