| Contextual Datasheet Results |
1 - 5 of about 5 for APT50M50JVFR |
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First line: APT50M50JVFR 500V POWER FREDFET Power generation high voltage N-Channel enhancement mode power Abstract: .. APT50M50JVFR. 500V 77A 0.050Ω. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 .. datasheet abstract.. |
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First line: SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS Abstract: .. 0.050 77 700 16300 3600 300 APT50M50JVFR. 300 0.040 70 450 8500 2500 240 APT30M40JVFR. 0.019 130 700 18000 3600 300 APT30M19JVFR. 200 0.022 97 450 8500 2500 220 APT20M22JVFR. 0.011 175 700 18000 3600 .. datasheet abstract.. |
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First line: SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS Abstract: .. 0.050 77 700 16300 3600 300 APT50M50JVFR. 300 0.040 70 450 8500 2500 240 APT30M40JVFR. 0.019 130 700 18000 3600 300 APT30M19JVFR. 200 0.022 97 450 8500 2500 220 APT20M22JVFR. 0.011 175 700 18000 3600 .. datasheet abstract.. |
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First line: Discrete Power Products Advanced Power Technology Technology.. Beginning with introduction Power maintained Abstract: .. 0.050 77 APT50M50JVR APT50M50JVFR. ISOTOP®[J] SOT-227 ISOLATED BASE 264-MAX TM[L2] TO-264[L] TO-247[B] D3 PAK[S] T-MAXTM[B2] Power MOS V® MOSFETs / FREDFETs. 12. BVDSS RDS ON ID Cont MOSFET .. datasheet abstract.. |
1747.86 Kb |
20 Pages 
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First line: Advanced Power Technology Technology.. Beginning with introduction Power maintained position forefront power Abstract: .. 0.050 77 APT50M50JVR APT50M50JVFR. ISOTOP®[J] SOT-227 ISOLATED BASE TO-264[L] TO-247[B] D3 PAK[S] T-MAXTM[B2] 264-MAX TM[L2] Power MOS V® MOSFETs / FREDFETs. 12. BVDSS RDS ON ID Cont Package .. datasheet abstract.. |
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36 Pages
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