500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
APT46GA90JD40 Microsemi Corporation Insulated Gate Bipolar Transistor, 87A I(C), 900V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4 visit Digikey

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : APT46GA90JD40 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : 300 Best Price : $20.99 Price Each : $22.72
Part : APT46GA90JD40 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 300 Best Price : $23.2000 Price Each : $41.3000
Shipping cost not included. Currency conversions are estimated. 

APT46GA90JD40 Datasheet

Part Manufacturer Description PDF Type
APT46GA90JD40 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP ; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; Original

APT46GA90JD40

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: APT46GA90JD40 900V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through , resistance and capacitance of the APT46GA90JD40 poly-silicone gate structure help control di/dt during , TJ = +125°C 136 18 26 APT46GA90JD40 Min Typ 4170 438 63 698 380 50 A nC pF Parameter Input , 2011 Typical Performance Curves 150 V GE APT46GA90JD40 350 15V 13V 10V 9V = 15V TJ= 25 , = 4.7 L = 100H APT46GA90JD40 300 40 250 200 VGE =15V,TJ=125°C 30 150 VGE =15V Microsemi
Original
E145592 APT10035LLL
Abstract: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through , resistance and capacitance of the APT46GA90JD40 poly-silicone gate structure help control di/dt during , (off) tf APT46GA90JD40 TJ = 25°C unless otherwise specified Gate- Collector Charge Switching , / Test Conditions APT46GA90JD40 Maximum Average Forward Current (TC = 106°C, Duty Cycle = 0.5 , = 667V 350 50 TJ = -55°C 0 APT46GA90JD40 1 10 100 200 VR, REVERSE VOLTAGE (V Microsemi
Original
MIC4452 Ultrafast Recovery Rectifier Bridge
Abstract: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through , resistance and capacitance of the APT46GA90JD40 poly-silicone gate structure help control di/dt during , (off) tf APT46GA90JD40 TJ = 25°C unless otherwise specified Gate- Collector Charge Switching , APT46GA90JD40 350 150 V = 15V 15V TJ= 25°C 300 125 IC, COLLECTOR CURRENT (A) IC , ) 1.15 Typical Performance Curves APT46GA90JD40 300 VCE = 600V TJ = 25°C, or 125°C RG = 4.7 Microsemi
Original
max4170
Abstract: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through , resistance and capacitance of the APT46GA90JD40 poly-silicone gate structure help control di/dt during , APT46GA90JD40 TJ = 25° unless otherwise specifi ed C Gate- Collector Charge Switching Safe Operating , . Typical Performance Curves APT46GA90JD40 350 150 V = 15V 15V TJ= 25°C 300 125 IC , , COLLECTOR-TO-EMITTER VOLTAGE (V) 0 Typical Performance Curves APT46GA90JD40 300 VCE = 600V TJ = 25°C, or Microsemi
Original
Abstract: APT46GA90JD40 APT64GA90LD30 APT80GA90LD40 TO-247 or D3 TO-247 or D3 TO-247 or D3 ISOTOP® TO-264 TO Microsemi
Original
smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 10F-A
Abstract: APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 Microsemi
Original
SOT-227 lead frame 5kw smps full bridge S.M.P.S 5kw SMPS full bridge PLAD15KP Fast Recovery Rectifiers mx gp 043 1.5ke series MIL-PRF-19500 DO-41 RT100KP
Abstract: -264 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 TO-247 or D3 Microsemi
Original
N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN semiconductors cross reference APT10026L2FLLG IGBT triple modules 100A APTES80DA120C3G