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Part Manufacturer Description Datasheet BUY
APT43GA90BD30 Microsemi Corporation Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy

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Part : APT43GA90BD30 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : - Best Price : $4.76 Price Each : $4.88
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APT43GA90BD30 Datasheet

Part Manufacturer Description PDF Type
APT43GA90BD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43; Original

APT43GA90BD30

Catalog Datasheet MFG & Type PDF Document Tags

APT43GA90B

Abstract: APT43GA90BD30 APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through , ) tf Switching Safe Operating Area Turn-On Delay Time APT43GA90BD30 TJ = 25°C unless , specifications and information contained herein. Typical Performance Curves APT43GA90BD30 300 40 V , ) IC, COLLECTOR CURRENT (A) 35 Typical Performance Curves APT43GA90BD30 200 td(OFF , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT43GA90BD30 10000
Microsemi
Original
APT43GA90B RECTIFIER DIODE 1000A schottky MIC4452

RECTIFIER DIODE 1000A schottky

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through , ) tf Switching Safe Operating Area Turn-On Delay Time APT43GA90BD30 TJ = 25°C unless , specifications and information contained herein. Typical Performance Curves APT43GA90BD30 300 40 V , ) IC, COLLECTOR CURRENT (A) 35 Typical Performance Curves APT43GA90BD30 200 td(OFF , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT43GA90BD30 10000
Microsemi
Original
Fast Recovery Bridge Rectifier, 60A, 600V
Abstract: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT (B) TO ® POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and Microsemi
Original

RECTIFIER DIODE 1000A schottky

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT (B) TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
Microsemi
Original
SD30

diode schottky 600v

Abstract: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
Microsemi
Original
diode schottky 600v

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S APT68GA60B2D40 APT80GA60LD40 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40
Microsemi
Original
SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 ISOTOP® TO-264 TO-264 8 10 13 21 19 23 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30
Microsemi
Original
SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 2000W mosfet power inverter IGBT triple modules 100A 10F-A

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter -264 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 TO-247 or D3
Microsemi
Original
smps 1000W 600V 300A igbt dc to dc boost converter smps 500w half bridge DRF1300 1000w inverter MOSFET 3000w inverter mosfet circuit