500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
APT36GA60BD15 Microsemi Corporation Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy
APT36GA60B Microsemi Corporation Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : APT36GA60B Supplier : Microsemi Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : APT36GA60BD15 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : 101 Best Price : $4.11 Price Each : $4.33
Shipping cost not included. Currency conversions are estimated. 

APT36GA60B Datasheet

Part Manufacturer Description PDF Type
APT36GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; Original
APT36GA60BD15 Microsemi IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 65A 290W TO-247 Original
APT36GA60BD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; Original

APT36GA60B

Catalog Datasheet MFG & Type PDF Document Tags

APT36GA60B

Abstract: APT36GA60B 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate , . ® TO -2 47 APT36GA60B G C E Single die IGBT FEATURES · Fast switching with low EMI · , 15 149 113 508 439 36 APT36GA60B Typ 2880 226 328 102 18 nC pF Parameter Input Capacitance
Microsemi
Original
MIC4452 JESD24-1
Abstract: APT36GA60B_S 280 60 V TJ= 125°C TJ= 25°C 40 TJ= 150°C 30 20 10 12V 160 11V 120 , Performance Curves APT36GA60B_S 200 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns , ) FIGURE 16, Switching Energy Losses vs Junction Temperature Typical Performance Curves APT36GA60B_S , ) 0.50 APT36GA60B_S 10% Gate Voltage TJ = 125°C td(on) 90% APT30DQ120 tr V CE IC , APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -24 POWER MOS 8 is a high Microsemi
Original

400v 20A ultra fast recovery diode

Abstract: Rev C 5 - 2011 Typical Performance Curves 60 V GE APT36GA60B_S 280 240 TJ= 125°C IC , APT36GA60B_S 18 160 VGE =15V,TJ=125°C 16 VGE = 15V 120 VGE =15V,TJ=25°C 14 80 12 10 , CURRENT (A) C, CAPACITANCE (pF) 200 100 APT36GA60B_S 1000 10 100 Coes 1 Cres 10 0 100 , 052-6327 Rev C 5 - 2011 APT36GA60B_S 10% Gate Voltage td(on) TJ = 125°C 90% tr V CC IC V CE , APT36GA60B APT36GA60S 600V High Speed PT IGBT ® -24 POWER MOS 8 is a high speed Punch-Through
Microsemi
Original
400v 20A ultra fast recovery diode

APT36GA60B

Abstract: APT36GA60S (V) IC, COLLECTOR CURRENT (A) GE APT36GA60B_S 280 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 40 Typical Performance Curves APT36GA60B_S 200 td(OFF), TURN-OFF DELAY TIME (ns) td(ON , Energy Losses vs Junction Temperature Typical Performance Curves APT36GA60B_S 10000 200 100 , 12 - 2008 FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL APT36GA60B_S 10% Gate Voltage , APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high
Microsemi
Original
c 1853

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S 48 35 40 25 kHz 14 17 21 33 29 34 80 kHz APT28GA60K APT36GA60B APT44GA60B , 23 36 27 31 APT28GA60BD15 APT36GA60BD15 APT44GA60BD30 APT47GA60JD40 APT54GA60BD30
Microsemi
Original
SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG Fast Recovery Rectifiers mx gp 043 5kw SMPS full bridge MIL-PRF-19500 DO-41 RT100KP

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 APT27GA90K APT35GA90B APT43GA90B , 27 31 APT28GA60BD15 APT36GA60BD15 APT44GA60BD30 APT47GA60JD40 APT54GA60BD30 APT60GA60JD60
Microsemi
Original
smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 10F-A

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 19 23 T-MAX® (DU Diode) ISOTOP® (DU Diode) APT36GA60B APT44GA60B APT54GA60B , -247 or D3 TO-247 or D3 TO-247 or D3 APT36GA60BD15 APT44GA60BD30 APT54GA60BD30 APT60GA60JD60
Microsemi
Original
N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN 2000W mosfet power inverter IGBT triple modules 100A APTES80DA120C3G APT30DQ60BCTG

VRF2933FL

Abstract: VRF164FL Eon2 td(off) APT36GA60B_SD15 TJ = 25° unless otherwise specifi ed C 508 4 μJ , APT36GA60BD_S15 280 60 V IC, COLLECTOR CURRENT (A) 50 TJ= 125°C TJ= 55°C 40 TJ= 150 , , GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) GE Typical Performance Curves APT36GA60BD_S15 , , Switching Energy Losses vs Junction Temperature Typical Performance Curves APT36GA60B_SD15 200 , APT36GA60BD_S15 10% Gate Voltage TJ = 125°C td(on) 90% APT15DQ60 tr IC V CC V CE 5% 10
Microsemi
Original
VRF2933FL VRF164FL Non - Isolated Buck, application ARF463AP1 DRF1301 MS5-001-14

LE79Q2281

Abstract: PLAD15KP 25V Turn-On Switching Energy tr Min Capacitance Eon2 td(off) APT36GA60B_SD15 , APT36GA60BD_S15 Typical Performance Curves APT36GA60BD_S15 200 td(OFF), TURN-OFF DELAY TIME (ns) td(ON , APT36GA60B_SD15 200 10000 100 1000 Coes 100 Cres 10 0 100 200 300 400 500 VCE , ) 0.50 APT36GA60BD_S15 10% Gate Voltage TJ = 125°C td(on) 90% APT15DQ60 tr IC V CC , RATINGS Symbol Characteristic / Test Conditions IF(AV) IF(RMS) IFSM APT36GA60B_SD15 Maximum
Microsemi
Original
LE79Q2281 IC ZL70572 STK 084 power amplifier transistor SI 6822 LED Driver aplications GC4600
Abstract: , VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 20A RG = 104 6 APT36GA60B_SD15 , Rev D 5 - 2011 Typical Performance Curves 60 V GE APT36GA60BD_S15 280 240 15V 13V = 15V , (ns) td(ON), TURN-ON DELAY TIME (ns) 200 APT36GA60BD_S15 18 160 VGE =15V,TJ=125°C 16 VGE , APT36GA60B_SD15 1000 10 100 Coes 1 Cres 10 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER , Impedance, Junction-To-Case vs Pulse Duration 1.0 052-6336 Rev D 5- 2011 APT36GA60BD_S15 10% Gate Microsemi
Original
APT36GA60SD15

400v 20A ultra fast recovery diode

Abstract: APT36GA60B APT36GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through , technologies. Low APT36GA60BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise , td(on) tr td(off) tf APT36GA60BD15 TJ = 25°C unless otherwise specified Typ 226 f = , APT36GA60BD15 Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5) 15 RMS Forward Current , °C unless otherwise specified 60 APT36GA60BD15 140 trr, REVERSE RECOVERY TIME (ns) T =125°C J
Microsemi
Original
1800g J750 SD15 TF328