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Part : AP85U03GH Supplier : Advanced Power Electronics Manufacturer : America II Electronics Stock : 2,665 Best Price : - Price Each : -
Part : AP85U03GH-HFTR Supplier : Advanced Micro Devices Manufacturer : Chip One Exchange Stock : 10,737 Best Price : - Price Each : -
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AP85U03GMT Datasheet

Part Manufacturer Description PDF Type
AP85U03GMT Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Original
AP85U03GMT-HF Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Original

AP85U03GMT

Catalog Datasheet MFG & Type PDF Document Tags

85u03

Abstract: 85U03GMT AP85U03GMT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS SO-8 Compatible Low On-resistance 30V , specifications subject to change without notice 201008072-1/4 AP85U03GMT Electrical Characteristics@Tj , CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP85U03GMT 200 100 , , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP85U03GMT
Advanced Power Electronics
Original
85U03GMT 85u03 85U03GM AP85*03 85u0

85u03

Abstract: 85U03GMT AP85U03GMT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D SO-8 Compatible Low On-resistance 30V RDS(ON) Simple , change without notice Value Units 2.5 /W 25 /W 1 200808115 AP85U03GMT , DESIGN. 2 AP85U03GMT 200 100 o o T C =25 C T C =150 C 10V 7.0 V 80 ID , 3 AP85U03GMT 16 f=1.0MHz 10000 12 V DS =16V V DS =20V V DS =24V C iss C (pF
Advanced Power Electronics
Original
85u03 mosfet
Abstract: AP85U03GMT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET â¼ Simple Drive Requirement BVDSS â¼ SO-8 Compatible â¼ Low , 1 200804184 AP85U03GMT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol , PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP85U03GMT 200 100 o o T , ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP85U03GMT 16 f=1.0MHz 10000 Advanced Power Electronics
Original
Abstract: AP85U03GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 30V RDS(ON) SO-8 Compatible Low , change without notice Units 2.5 3 /W 25 /W 1 200908206 AP85U03GMT-HF Electrical , AP85U03GMT-HF 200 100 T C =25 o C T C =150 o C 10V 7.0 V 80 ID , Drain Current (A) ID , , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP85U03GMT-HF Advanced Power Electronics
Original

85U03GM

Abstract: 85u03 Advanced Power Electronics Corp. AP85U03GMT-HF-3 N-channel Enhancement-mode Power MOSFET , Thermal Resistance, Junction-case Units ° C/W Ordering Information AP85U03GMT-HF-3TR , www.a-powerusa.com 200908206-3 1/5 Advanced Power Electronics Corp. AP85U03GMT-HF-3 Electrical , Electronics Corp. AP85U03GMT-HF-3 Typical Electrical Characteristics 200 100 T C =25 o C T C , . Junction Temperature 3/5 Advanced Power Electronics Corp. AP85U03GMT-HF-3 Typical Electrical
Advanced Power Electronics
Original
AP85U03

AP85*03

Abstract: AP85U03GMT-HF AP85U03GMT-HF Halogen-Free Product Advanced Power Electronics Corp. Simple Drive Requirement SO-8 Compatible Low On-resistance RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE , 200908206 AP85U03GMT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS , AP85U03GMT-HF 200 100 T C =25 C 160 o 10V 7.0 V 80 T C =150 C o ID , Drain Current (A , AP85U03GMT-HF 10 4000 f=1.0MHz I D =30A VGS , Gate to Source Voltage (V) 8 C (pF) 6 V DS =15V V
Advanced Power Electronics
Original